基于多端口参数提取和主动空间映射法的腔体滤波器设计

为提高微波腔体滤波器的设计效率,文中提出了一种基于多端口参数提取和空间映射法的滤波器快速设计 方法。通过添加额外内部端口提取腔体滤波器电磁模型的Y 参数,从而计算出耦合矩阵,再结合空间映射法将求解滤 波器理想尺寸问题转换为逼近理想耦合矩阵问题。最后设计并加工了一款四阶同轴腔体滤波器,在初值偏差很大的情 况下,经过四次迭代即可得到满足指标的滤波器物理尺寸,实物调试结果和仿真结果一致性良好,从而证明了文中方法 的快捷有效。     

频变耦合双工器的快速综合方法

为了解决频变耦合双工器的快速综合问题，提出了一种耦合矩阵优化综合方法.该方法分通道滤波器综合和优化两个阶段.首先应用推导的双工器特征多项式迭代求解出各通道滤波器的特征多项式，并应用耦合矩阵综合法计算出各通道滤波器的规范耦合矩阵.然后，根据指定的频变耦合拓扑结构，优化逼近规范耦合矩阵.最后，反归一化双工器的频变耦合矩阵得到最终设计参数.电路仿真结果与理论综合结果一致，表明了所提方法的正确性和有效性.该频变耦合双工器快速综合方法保持了较好的通带等波纹特性，且可以根据设计需要，任意指定各通道滤波器的频变耦合拓扑结构.     

基于Y参数的快速滤波器设计方法

针对三维全波仿真提取微波谐振腔耦合系数耗时长和提取结果不易被收敛的问题,提出了一种基于等效电路Y参数的耦合系数提取方法,并将该方法应用到改进的渐进空间映射算法的参数提取过程中,提高了滤波器的设计效率。通过一个4腔同轴腔体滤波器的设计实例进行了验证,滤波器的电磁仿真结果与理论综合结果吻合良好,证实了该方法的有效性。     

关于耦合谐振滤波器中耦合极性的几点讨论

对改变带有交叉耦合的耦合谐振滤波器中的耦合系数的极性而不改变滤波器的性能 ,本文给出了一个充分条件及其两个推论。这为滤波器的设计和实现带来了一定的灵活性。结合这一充分条件 ,本文还详细解释了滤波器中的耦合极性的相对性问题。最后给出了在确定耦合系数矩阵后实现滤波器时设计耦合结构的一种通用方法。     

窄带波导滤波器物理尺寸的快速确定方法

介绍了窄带波导滤波器物理尺寸的快速确定方法。推导出一种用于计算耦合窗散射参数的显式表 达式,借此能够方便地结合电磁(EM)仿真软件确定耦合结构的物理尺寸。此外,考虑到补偿相位的影响,对于交叉 耦合中电耦合孔中心位置的确定给出了更加精确的修正方法。最后,用一个四阶交叉耦合滤波器实例验证了方法 的有效性。     

平行耦合微带线带通滤波器分析与设计

为了克服平行耦合微带线带通滤波器设计中存在的尺寸大、需要查表、优化困难等问题,提出了一种平行耦合微带线带通滤波器基于ADS软件的设计方法。经过深入的理论分析发现,平行耦合线带通滤波器系统阻抗微带线非谐振单元,长度可尽量取短以减小电路尺寸;利用ADS软件自带滤波器设计工具可得到低通滤波器原型,省去了查表的麻烦;在版图优化上采用调谐方法比优化方法更有效。仿真结果表明,所设计带通滤波器系统阻抗微带线为2.5 mm,中心频率5 GHz,相对带宽10%。该方法在减小滤波器尺寸的同时没有降低滤波器性能,设计实现快速高效。     

Ku波段交叉耦合波导滤波器的精确设计

针对软件优化法设计交叉耦合波导滤波器的耗时性,利用矩形波导设计了Ku波段折叠型交叉耦合滤波器。采用S参数的多项式综合和矩阵消零的方法提取耦合矩阵,设计过程将全波建模和电路模型分析相结合,利用微波CAD软件HFSS分步骤对每个谐振单元及耦合结构进行仿真,以确定其尺寸,避免了对滤波器的软件优化,所得仿真结果与理论值吻合较好。     

频变交叉耦合带通滤波器的耦合矩阵综合研究

综合代表滤波器拓扑结构和特性的耦合矩阵是交叉耦合滤波器设计的重点。提出了一种基于广义特征值的优化综合方法,通过非线性最小二次求解,将耦合矩阵的广义特征值逼近至广义切比雪夫响应多项式传输函数零极值参考点,优化求解出带有频变交叉耦合带通滤波器的耦合矩阵。通过3个数值实例演示了该方法,并验证其有效性。这是对经典带通滤波器耦合矩阵综合方法的补充,为频变交叉耦合滤波器的设计建立了基础。     

频变耦合双通带滤波器的综合方法

为了解决频变耦合双通带滤波器缺少有效综合方法的问题,文中提出一种优化综合方法.该方法首先通过频率变换技术得到滤波器在归一化双通带域内的特征多项式,然后应用经典的耦合矩阵综合方法得到双通带滤波器的全规范耦合矩阵,进而以矩阵的特征值为趋近目标构造目标函数,最后应用梯度优化算法进行优化获得了双通带滤波器的频变耦合矩阵.文中对...     

一种毫米波微带带通滤波器的设计

摘要：基于小反射理论,引入Klopfenstein阻抗渐变线对传统发夹型谐振器结构进行改进,设计了一种相对带宽为8%的结构紧凑型毫米波带通滤波器。采用S参数的多项式综合方法得到耦合矩阵电路模型,利用三维电磁场全波仿真软件HFSS拟合出耦合系数与谐振器间距、外部品质因数与抽头位置的关系曲线,进而提取出耦合矩阵对应滤波器的物理尺寸。实测结果表明：在28.8GHz-31.2GHz频带内,该滤波器的插损小于3.0dB,回波优于-17dB,带外抑制大于40dB@33GHz,测试结果与计算结果吻合较好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks