射频磁控溅射室温下制备ITO薄膜的光学性能研究

靶材为铟锡氧化物(In2O3:SnO2=1:1),用射频磁控溅射法在低温下制备了光电性能优良的ITO薄膜.质量流量计调节Ar气压强为0.2～3.0Pa,氧流量为0～10sccm,并详细探讨了溅射时氩气压强和氧流量变化对ITO薄膜光学性能的影响.结果表明:溅射Ar气压强为0.8Pa,氧流量为2.4sccm时,薄膜的折射率最低n=1.97,较接近增透膜的光学匹配.薄膜厚度为241.5nm时,薄膜的最大透过率为89.4%(包括玻璃基体),方阻为75.9Ω/□,电导率为8.8×10-4Ω·cm.     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

倾斜磁控溅射制备低阻高透ITO薄膜及其光电特性

利用直流磁控溅射方法,在Ar和O_2的混合气氛中,采用陶瓷靶制备ITO薄膜;采用紫外-可见-红外分光光度计和四探针法研究了溅射工艺参数对ITO薄膜的光电特性的影响。实验结果表明,当靶材角度在23-25°、O_2流量在7-9sccm、溅射时间在60-90 min和溅射功率在100-120W时获得可见光透过率高于90%,方阻在10-20Ω/□之间的优质ITO薄膜。     

能量过滤磁控溅射技术制备ITO薄膜及其特性研究

采用磁控溅射(DMS)和能量过滤磁控溅射(EFDMS)技术在玻璃衬底上制备ITO透明导电薄膜。利用扫描电子显微镜、原子力显微镜、X射线衍射、紫外-可见分光光度计、四探针电阻仪、椭偏光谱仪等对薄膜的性能进行表征和分析,初步探讨了EFDMS技术的成膜机理。研究发现与DMS技术相比,EFDMS技术可有效降低薄膜的表面粗糙度,并且薄膜光电性能有一定改善。     

磁控溅射低温沉积ITO薄膜及其光电特性研究

采用直流反应磁控溅射法低温沉积ITO薄膜,用XRD、SEM和UV—Vis分别表征ITO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱,研究了氧分压、溅射功率及薄膜厚度等工艺参数对薄膜光电性能的影响,结果表明,氧分压过大时,ITO薄膜中有大量的位错和缺陷,使薄膜的电阻率变大,导电性变差;氧分压过小时,薄膜中将有大量氧空位产生,导致晶格变形,使电阻率增加。随着溅射功率增大,在相同时间内薄膜厚度增加,方块电阻减小,薄膜电阻率降低。随着薄膜厚度增加,制备的薄膜晶体结构相对完整,载流子浓度和迁移率逐渐增大,薄膜电阻率变小,进而对样品的光电性能产生明显影响。     

低温直流磁控溅射制备ITO薄膜工艺研究

采用低温直流磁控溅射法针对附有有机聚合物玻璃磁控镀制ITO薄膜,通过四探针、紫外可见分光亮度计对样品进行表征,研究了基底温度、溅射功率对ITO薄膜光电性能影响,试验表明:在附有有机聚合物的玻璃上低温直流磁控溅射法制备ITO薄膜,随着基底温度的增加方块电阻先下降后增加,透过率先增加后略微减少;随着溅射功率的增加,薄膜方块电阻减少,透过率降低。     

ITO薄膜直流反应磁控溅射制备及性能研究

以90wt%In和10wt%Sn铟锡合金为靶材,采用直流磁控反应溅射法在玻璃基片制备ITO透明导电薄膜.用紫外-可见光分光光度计、四探针电阻仪、XRD和SEM分别测试了ITO薄膜的紫外-可见光透射光谱、方块电阻、薄膜的结构和表面形貌.研究了氧分压对ITO薄膜性能的影响.实验结果表明,ITO薄膜随着氧分压的增加,薄膜紫外透射光谱的吸收截止边带向短波长方向漂移.随着氧分压的增大,ITO薄膜的方块电阻增加,结晶程度变好,晶粒尺寸变大.     

ITO靶材的直流磁控溅射镀膜工艺研究

对ITO靶材的直流磁控溅射工艺进行研究,通过正交试验方法确定制备ITO薄膜的最优工艺参数,并明确了溅射温度、氧氩比、溅射气压和溅射功率密度对ITO薄膜电阻率和可见光透过率的影响规律。最优工艺参数为溅射温度370℃,氧氩比0.5/40,溅射气压0.4 Pa,溅射功率密度0.17 W/cm~2。薄膜电阻率受各因素影响的主次顺序是:氧氩比溅射温度溅射气压溅射功率密度。薄膜可见光透过率受各因素影响的主次顺序为:溅射温度溅射气压氧氩比溅射功率密度。     

射频磁控溅射SiOx薄膜的制备与阻隔性能研究

利用磁控溅射技术,以SiO2为靶材,Ar为射频源气体,在PET基材上制备SiOx薄膜.研究了不同放电功率、氩气流量、镀膜时间等参数对SiOx薄膜阻隔性能的影响.结果表明:在一定范围内,薄膜的阻隔性能随放电功率的增大而增大,而后逐渐减小;氩气流量对薄膜的阻隔性能也有一定影响;镀膜时间在10min时SiOx薄膜的阻隔性能最好.扫描电镜SEM测试表明,在氩气流量为100cm3/min,镀膜时间10min,1500W放电功率下制备的SiOx薄膜阻隔性能较好、表面较均匀.     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶(铟-锡，90-10)，通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜，并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明，随着退火温度升高薄膜的电学特性得到很大提高。     

Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering

Indium tin oxide (ITO) films were deposited on glass substrates by rf magnetron sputtering using a ceramic target (In₂O₃-SnO₂, 90-10 wt%) without extra heating. The post annealing was done in air and in vacuum, respectively. The effects of annealing on the structure, surface morphology, optical and electrical properties of the ITO films were studied. The results show that the increase of the annealing temperature improves the crystallinity of the films, increases the surface roughness, and improves the optical and electrical properties. The transmittance of the films in visible region is increased over 90% after the annealing process in air or in vacuum. The resistivity of the films deposited is about 8.125×10⁻⁴ Ω cm and falls down to 2.34×10⁻⁴ Ω cm as the annealing temperature is increased to 500°C in vacuum. Compared with the results of the ITO films annealed in air, the properties of the films annealed in vacuum is better.     

Al-Mg-B thin films prepared by magnetron sputtering

Hard, nanocomposite aluminum magnesium boride thin films were prepared on Si (100) substrates with a three target magnetron sputtering system. The films were characterized by X-ray diffraction, atomic force microscope, electron micro-probe, Fourier transform infrared spectroscopy and nanoindentation. The results show that the maximum hardness of the as-deposited films is about 30.7 GPa and these films are all X-ray amorphous with smooth surfaces. The influences of substrate temperature and boron sputtering power on the quality of the films are discussed. From the results of this work, magnetron sputtering is a promising method to deposit Al-Mg-B thin films.     

室温直流磁控溅射制备ITO膜及光电性能研究

室温条件下,在玻璃衬底上,采用直流磁控溅射法制备了ITO膜.研究了溅射压强,氧流量和溅射功率等工艺参数对薄膜光电性能的影响.结果表明当Ar流量为44.2 sccm和溅射时间20 min等参数不变时,溅射气压0.7 Pa,氧流量0.62 sccm和溅射功率130 W为最佳工艺条件.并得到了电阻率5.02×10-4 Ω·cm,在可见光区平均透过率80%以上ITO薄膜.     

磁控溅射ITO薄膜的退火处理

采用直流磁控溅射方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃~400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.     

离子束辅助磁控溅射低温沉积ITO透明导电薄膜的研究

本文对离子束辅助磁控溅射低温沉积的ITO薄膜进行了研究,重点考察了辅助离子束能量对ITO薄膜的光电性能和晶体结构的影响。结果表明:当A r/O2辅助离子束能量为900 eV左右时能够有效改善ITO薄膜的光电性能,在从非晶到多晶的转变过程中ITO薄膜具有较低的电阻率。在聚碳酸酯(PC)基片上制备了平均可见光透过率81.0%、电阻率为5.668×10-4ohm cm、结构致密且附着力良好的ITO薄膜,基片无变形。     

Low-temperature deposited Titanium-doped zinc oxide thin films on the flexible PET substrate by DC magnetron sputtering

Transparent conducting Titanium-doped zinc oxide thin films (TZO) with high transparency and relatively low resistivity were firstly deposited on water-cooled polyethylene terephthalate (PET) substrates at room temperature by DC magnetron sputtering. The microstructure, optical and electrical properties of the deposited films were investigated and discussed. The XRD patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The electrical resistivity decreases when the sputtering power increases from 45 W to 60 W. However, as the puttering power continue increases from 60 W to 90 W, the electrical resistivity increases rapidly. When the puttering power is 60 W, the films deposited on PET substrate have the lowest resistivity of 4.72 × 10⁻⁴ Ω cm and a relatively high transmittance of above 92% in the visible range.     

Effect of oxygen flow rate on ITO thin films deposited by facing targets sputtering

Tin-doped indium oxide (ITO) thin films were deposited on glass substrates at various oxygen flow rates using a planar magnetron sputtering system with facing targets. In this system, the strong internal magnets inside the target holders confine the plasma between the targets. High resolution transmission electron microscopy revealed a combination of amorphous and crystalline phases on the glass substrate. X-ray photoelectron spectroscopy suggested that the decrease in carrier concentration and increase in mobility were caused by a decrease in the concentration of Sn⁴⁺ states. The electrical and optical properties of the ITO films were examined by Hall measurements and UV-visible spectroscopy, which showed a film resistivity and transmittance of 4.26 × l0⁻⁴ Ω cm, and > 80% in the visible region, respectively.     

Switching properties of vanadium doped TiO2 thin films prepared by magnetron sputtering

In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-dependent electrical and optical transmission spectroscopy measurements. The structural investigations indicate that thin films were XRD-amorphous. Reversible thermoresistance effect, recorded at 52 ± 1 °C was found from electrical measurements. The prepared coatings were well transparent in the visible part of the light spectrum from ca. 350 nm.     

Structures and properties of the Al-doped ZnO thin films prepared by radio frequency magnetron sputtering

Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering using a ZnO target with 2 wt.% Al₂O₃. The structures and properties of the films were characterized by the thin film X-ray diffraction, high resolution transmission electron microscopy, Hall system and ultraviolet/visible/near-infrared spectrophotometer. The Al-doped ZnO film with high crystalline quality and good properties was obtained at the sputtering power of 100 W, working pressure of 0.3 Pa and substrate temperature of 250 °C. The results of further structure analysis show that the interplanar spacings d are enlarged in other directions besides the direction perpendicular to the substrate. Apart from the film stress, the doping concentration and the doping site of Al play an important role in the variation of lattice parameters. When the doping concentration of Al is more than 1.5 wt.%, part of Al atoms are incorporated in the interstitial site, which leads to the increase of lattice parameters. This viewpoint is also proved by the first principle calculations.