Ion beam induced nucleation in amorphous GaAs layers during MeV implantation

To investigate the nonlinear dose dependence of the thickness of the recrystallized layer during ion beam induced epitaxial recrystallization at amorphous/crystalline interfaces GaAs samples were irradiated with 1.0 MeV Ar⁺, 1.6 MeV Ar⁺ or 2.5 MeV Kr⁺ ions using a dose rate of 1.4 × 10¹² cm⁻² s⁻¹ at temperatures between 50°C and 180°C. It has been found that the thickness of the recrystallized layer reaches a maximum value at T_max = 90°C and 135°C for the Ar⁺ and Kr⁺ implantations, respectively. This means that the crystallization rate deviates from an Arrhenius dependence due to ion beam induced nucleation and growth within the remaining amorphous layer. The size of the crystallites depends on the implantation dose. This nucleation and growth of the crystallites disturbes and at least blocks the interface movement because the remaining surface layer becomes polycrystalline. Choosing temperatures sufficiently below T_max the thickness of the recrystallized layer increases linearly with the implantation dose indicating that the irradiation temperature is too low for ion induced nucleation.     

Neutralization rate for slow Ar ions in front of KCl(0 0 1)

Charge state distributions of reflected ions are measured when 5 keV Ar^q+(q = 0−2) ions are incident on a clean KCl(0 0 1) surface at grazing angle, θ_i. Although the charge state distribution does not depend on the incident charge state at larger θ_i, significant dependence of the charge state distribution on incident charge state is observed at smaller θ_i. The ionization of Ar⁰ is completely suppressed at θ_i < 20 mrad, while large neutralization probability is observed for Ar⁺ incidence. These features allow us to derive the position-dependent neutralization rate of Ar⁺ in front of KCl(0 0 1). The obtained neutralization rate decreases exponentially with distance from the surface as it is usually assumed.     

α粒子和Kr~+对CaCeTi_2O_7的辐照损伤的Monte Carlo模拟

为研究高能粒子辐照条件下CaCeTi_2O_7基体的微观损伤机制,利用蒙特卡罗软件包SRIM模拟α粒子和Kr~+在0.1~10.0 MeV入射能量范围内,CaCeTi_2O_7的阻止本领、能量损失、平均投影射程和空位分布。结果表明,当不同能量的α粒子入射时,平均投影射程为0.43~40.32μm,平均一个α粒子在单位纳米深度产生的空位数约为10~23个,CaCeTi_2O_7以电子阻止本领为主,能量主要以电离能损的方式损耗;当不同能量的Kr~+入射时,平均投影射程为0.04~2.76μm,平均一个Kr~+在单位纳米深度产生的空位数约为106~2 488个,随着入射粒子能量的增加核阻止本领逐渐减小,电子阻止本领逐渐增加,能量损失方式由声子能损向电离能损方式转变。入射角度由0°增加至75°时,α粒子入射造成的损伤区深度由14.5μm减小至4.0μm,Kr~+入射造成的损伤区深度由1.57μm减小至0.2μm。     

Ion beam mixing of titanium films on stainless steel

The ion mixing of Ti-steel bilayers with N⁺, Ar⁺, Ti⁺, Kr⁺ and Xe⁺ ions was investigated by means of Rutherford backscattering spectroscopy (RBS). The mixing rates exhibit a linear scaling with the deposited damage energy f_D. No correlation between the properties of the mixing ion and the mixing efficiency was found. The results are compared with the predictions of ballistic and thermal-spike models.     

Neutralization of keV Ne and Ar ions during grazing scattering from an Al(1 1 1) surface

Charge fractions after scattering of Ne⁺ ions, Ne⁰ atoms and Ar⁺ ions with keV energies under a grazing angle of incidence from an atomically clean and flat Al(1 1 1) surface are studied. For incoming Ne⁺ ions we observe defined ion fractions in the scattered beams, whereas for incident Ne⁰ atoms ion fractions are more than one order of magnitude smaller. This experimental result provides clear evidence for a survival of Ne⁺ ions over the whole scattering event. From the dependence of ion fractions on the perpendicular energy component we derive neutralization rates as function of distance from the surface. These rates compare well with recent theoretical calculations for the system He⁺–Al(1 1 1). For incident Ar⁺ ions no survival of ions is found and upper limits for the survival probability and lower limits for the neutralization rate are determined.     

铁磷摩尔比对含锆铁磷酸盐玻璃陶瓷结构和化学稳定性的影响北大核心CSCD

以P_(2)O_(5)-Fe_(2)O_(3)-Al_(2)O_(3)-Na_(2)O四元玻璃作为基础,掺入x=6%(摩尔分数)的ZrO_(2),改变基质玻璃的Fe/P摩尔比(r(Fe/P)),采用熔淬法制备一系列玻璃陶瓷样品,研究含ZrO_(2)的玻璃陶瓷结构和化学稳定性随Fe/P摩尔比的变化。X射线衍射用于物相分析,拉曼光谱、X射线光电子能谱和穆斯堡尔谱用于结构分析。Fe/P摩尔比小于0.18时,样品中Fe^(3+)的相对含量(n(Fe^(3+))/(n(Fe^(2+))+n(Fe^(3+)))摩尔比)随着r(Fe/P)增加而增多;r(Fe/P)介于0.18~0.32时,n(Fe^(3+))/(n(Fe^(2+))+n(Fe^(3+)))在60%左右波动。r(Fe/P)介于0.2~0.3时,样品的化学稳定性最好。     

Temperature dependence of the chemical sputtering of amorphous hydrogenated carbon films by hydrogen

The temperature dependence of chemical erosion and chemical sputtering of amorphous hydrogenated carbon films due to exposure to hydrogen atoms (H⁰) alone and combined exposure to argon ions and H⁰ was measured in the temperature range from 110 to 950 K. The chemical erosion yield for H⁰ alone is below the detection limit for temperatures below about 340 K. It increases strongly with increasing temperature, goes through a maximum around 650–700 K and decreases again for higher temperatures. Combined exposure to Ar⁺ and H⁰ results in substantial chemical sputtering yields in the temperature range below 340 K. In this range the yield does not depend on temperature, but it increases with energy from about 1 (eroded carbon atoms per impinging Ar⁺ ion) to about 4 if the ion energy is increased from 50 to 800 eV. For temperatures above 340 K the measured erosion rates show the same temperature dependence as for the H⁰-only case, but they are higher than for H⁰-only. The difference between the Ar⁺ and H⁰ and the H⁰-only cases increases monotonically with increasing ion energy.     

类锂离子与He原子碰撞中的单电子丢失

本文基于Bohr-Lindhard(B-L)模型,考虑了碰撞双方的电子密度分布,计算了能量为20~900keV/u的B2+、C3+、N4+及O5+等类锂离子与He原子碰撞中的单电子丢失(SEL)、伴随单电离的单电子丢失(SELSI)、伴随双电离的单电子丢失(SELDI)等截面对能量的依赖曲线,计算结果与已有的实验数据符合较好。分析发现,对于一给定的过程,较重的离子有较小的有效碰撞参数范围;对于同一种入射离子,SEL、SELSI和SELDI等过程对应的有效碰撞参数范围依次减小。     

Ion beam enhanced etching of LiNbO3

Single crystals of z- and x-cut LiNbO₃ were irradiated at room temperature and 15 K using He⁺- and Ar⁺-ions with energies of 40 and 350 keV and ion fluences between 5 × 10¹² and 5 × 10¹⁶ cm⁻². The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He⁺-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO₃ in the case of Ar⁺-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He⁺- and Ar⁺-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min⁻¹. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO₃ are discussed.     

Broadening effects in Auger neutralization of 130–430 eV Ar ions at Al surfaces

We present a model for electron emission from Al surfaces by Auger neutralization of 130–430 eV Ar⁺ ions, that includes the singular response of the metal conduction band to the abrupt change of the surface potential caused by electron capture by the incident ion. This effect, previously identified in X-ray studies, produces a broadening that plays a significant role in reproducing the higher energy part of the experimental electron kinetic energy distributions.     

High ion-beam induced electron yields from polycrystalline diamond

Extraordinarily high ion-beam induced electron yields are seen from polycrystalline diamond surfaces for high energy H⁺, He⁺ and Ar⁺ ions. This is attributed to the negative electron affinity of the diamond surface. However, the yield decays rapidly with dose, limiting the potential applications. The mechanism for decay is suggested to be electron-stimulated desorption of surface hydrogen, which removes the negative electron affinity responsible for high yields.     

Amorphization and recrystallization of the ABO3 oxides

Single crystals of the ABO₃ phases CaTiO₃, SrTiO₃, BaTiO₃, LiNbO₃, KNbO₃, LiTaO₃, and KTaO₃ were irradiated by 800 keV Kr⁺, Xe⁺, or Ne⁺ ions over the temperature range from 20 to 1100 K. The critical amorphization temperature, T_c, above which radiation-induced amorphization does not occur varied from approximately 450 K for the titanate compositions to more than 850 K for the tantalates. While the absolute ranking of increasing critical amorphization temperatures could not be explained by any simple physical parameter associated with the ABO₃ oxides, within each chemical group defined by the B-site cation (i.e., within the titanates, niobates, and tantalates), T_c tends to increase with increasing mass of the A-site cation. T_c was lower for the Ne⁺ irradiations as compared to Kr⁺, but it was approximately the same for the irradiations with Kr⁺ or Xe⁺. Thermal recrystallization experiments were performed on the ion-beam-amorphized thin sections in situ in the transmission electron microscope (TEM). In the high vacuum environment of the microscope, the titanates recrystallized epitaxially from the thick areas of the TEM specimens at temperatures of 800–850 K. The niobates and tantalates did not recrystallize epitaxially, but instead, new crystals nucleated and grew in the amorphous region in the temperature range 825–925 K. These new crystallites apparently retain some ‘memory' of the original crystal orientation prior to ion-beam amorphization.     

二硫代氨基甲酸盐树脂的合成及其对废水中Fe3+、Co2+、Mn2+的吸附性能研究

以D309树脂为原料,采用甲醇 水溶液法合成二硫代氨基甲酸盐（DTCR）树脂,利用红外光谱和扫描电镜对其结构进行了表征,测试了合成树脂对废水中Fe³⁺、Co²⁺、Mn²⁺的吸附性能,并通过等温吸附实验和动力学实验考察了合成树脂对金属离子的吸附去除能力随接触时间的变化情况和吸附机理。研究表明,该树脂对Fe³⁺、Co²⁺、Mn²⁺的吸附符合Langmuir等温线,在25 ℃下最大吸附量可分别达25.07、20.58、41.87 mg/g,吸附速率较快,吸附4 h均可达到吸附平衡;在二元金属离子混合体系中,树脂对3种金属离子的吸附关系遵守Mn²⁺＞Co²⁺＞Fe³⁺的基本关系;Ca²⁺、Mg²⁺干扰离子存在情况下,树脂对Co²⁺的去除率基本不变,维持在97%左右,树脂对Fe³⁺的去除率得到提高,由50%上升到98%,而树脂对Mn²⁺的去除率反而下降,由92%下降到80%。     

含氟生物浸出体系中阳离子竞争络合解毒机理研究

针对生物浸出体系中氟对浸矿微生物的抑制问题,提出结合氟的溶液化学性质,利用金属阳离子的竞争络合作用,使溶液中的游离F^-形成络合态,进而使细菌可耐受高氟浓度生长。比较了不同金属氟化物对细菌生长的影响,结果显示：AlF₃和FeF₃性质稳定,对细菌生长无明显影响;MgF₂溶于浸出体系释放F^-,对细菌产生毒害作用。热力学分析结果表明,Al³⁺、Fe³⁺对F^-的竞争络合机理以及Mg²⁺对F^-无竞争络合符合热力学定律。比较了Al³⁺和Fe³⁺对F^-的解毒能力,结果表明,Al³⁺、Fe³⁺对氟均有解毒作用,解毒能力大小为Al³⁺>Fe³⁺。通过PHREEQC计算可知,络合物形态可通过调节溶液中F^-与金属离子的浓度控制,且随着F^-与金属离子浓度比的减小,配位数向低配位方向移动。     

Light emission from oxygen covered Al and Cu surfaces

Ion beam induced light emission is used to investigate the sputtering yield, S_O, of oxygen atoms on the surfaces of a polycrystalline copper and an Al(1 1 1) target. Under Ar⁺ and Ne⁺ ion bombardment of Al(1 1 1) and polycrystalline copper targets, spectral lines of Cu I and Al I emitting from sputtered excited atoms are measured as a function of the oxygen partial pressure, wavelength and beam energy. The light emission for two Al I lines (3082 and 3962 Å) and Cu I lines (3247 and 3274 Å) are proportional to the oxygen partial pressure (1×10⁻⁴ Torr). Above 2×10⁻⁴ Torr, the light intensities start to decrease which is consistent with other measurements. From saturated-oxygen covered target surfaces, light intensities of Al I and Cu I lines are measured as a function of time and oxygen partial pressures. The sputtering yields could be determined from the curves of spectral lines directly. For 10 and 20 keV Ar⁺ ions bombarding the copper surface, the oxygen sputtering yields are 0.34 and 0.22 (atoms/ion), respectively. The same copper target was bombarded by Ne⁺ ions at 5 and 10 keV, the oxygen sputtering yields are 0.87 and 0.59, respectively. For 10, 15, and 20 keV Ar⁺ bombarding an Al(1 1 1) target, the obtained sputtering yields are 0.44, 0.31, and 0.2 (atoms/ion), respectively.     

Dissociation of fast HeH ions at glancing angle scattering from a crystal surface

Scattered H⁺ fragments resulting from glancing angle incidence of MeV HeH⁺ ions on the clean (001) surface of a SnTe crystal are distributed on an ellipse in the E-φ plane, where the angle φ is measured in the plane parallel to the surface and E is the energy of the fragment. The kinetic energies released upon dissociation derived from the diameters of the ellipses are smaller than those calculated from the explosion of fully ionized fragments.

Based on a simplified model, we have simulated the dissociative scattering of HeH⁺ ions at the surface, where the dissociation takes place via excitation of HeH⁺ ions and the charges of fragments change along the trajectory. It is concluded from the simulation that the cross section for dissociation in HeH⁺-electron collisions is of the order of 10⁻¹⁶ cm².     

Secondary ion emission from beryllium surfaces by Ar and /or (Ar+D2) mixed ion bombardments

With respect to the impurity emission and erosion of a Be first wall, a secondary ion mass spectrometric investigation was carried out along with surface characterization with X-ray photoelectron spectroscopy. It was found that Be is emitted as distinct types of chemical forms from the surface owing to sputtering with Ar⁺ and an (Ar⁺+ D⁺₂) mixture: (i) Be and Be-cluster, (ii) oxide and hydroxide, and (iii) hydride and/or deuteride.     

Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures

The evolution of damages at a Cu/Al₂O₃ device interface after Ar⁺ irradiation, depending on alumina structure, and the effect of surface roughness on sputtering have been studied. A polycrystalline Cu/Al₂O₃ bilayer and polycrystalline Cu on amorphous alumina were irradiated with 400 keV Ar⁺ ion beam at doses ranging from 5 × 10¹⁶ to 10¹⁷ Ar⁺/cm² at room temperature. The copper layer thicknesses were between 100 and 200 nm. RBS analysis was used to characterize the interface modification and to deduce the sputtering yield of copper. The SEM technique was used to control the surface topography. A RBS computer simulation program was used to reproduce experimental spectra and to follow the concentration profile evolutions of different elements before and after ion irradiation. A modified TRIM calculation program which takes into account the sputtering yield evolution as well as the concentration variation versus dose gives a satisfactory reproduction of the experimental argon distribution. The surface roughness effect on sputtering and the alumina structure influence at the interface on mixing mechanisms are discussed.     

Effects on channeling of radiation damage due to 28 GeV protons

For an irradiation of 2.9 × 10¹⁹ protons at a beam energy of 28 GeV, the channeling minimum yield in a silicon single crystal increased from 2.3% to 4.1%. The radiation damage occurred with a proton fluence of (4.1 ± 1.4) × 10²⁰/cm². The degradation was measured with MeV-range He ions using Rutherford backscattering. The relevance to bent crystal extraction of TeV beams is discussed.