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1.
300mm硅片中厚度合适的洁净区和高密度氧沉淀,有利于对器件有源区金属沾污的吸除,改善栅氧化物的完整性.文中使用Ar,N2/NHa混合气作为快速退火(RTA)气氛,研究RTA气氛对洁净区、氧沉淀形成的影响.研究发现N2/NHs混合气氛处理的硅片表层洁净区明显薄于Ar气氛处理的硅片,氧沉淀密度明显高于Ar气氛处理后的硅片.同时发现在两种气氛下,延长恒温时间都可以降低洁净区厚度,增加氧沉淀密度.基于空位增强氧沉淀成核和氮化空位注入的基本原理,就RTA气氛和恒温时间对洁净区和氧沉淀分布的影响进行了讨论. 相似文献
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300mm硅片中厚度合适的洁净区和高密度氧沉淀,有利于对器件有源区金属沾污的吸除,改善栅氧化物的完整性.文中使用Ar,N2/NHa混合气作为快速退火(RTA)气氛,研究RTA气氛对洁净区、氧沉淀形成的影响.研究发现N2/NHs混合气氛处理的硅片表层洁净区明显薄于Ar气氛处理的硅片,氧沉淀密度明显高于Ar气氛处理后的硅片.同时发现在两种气氛下,延长恒温时间都可以降低洁净区厚度,增加氧沉淀密度.基于空位增强氧沉淀成核和氮化空位注入的基本原理,就RTA气氛和恒温时间对洁净区和氧沉淀分布的影响进行了讨论. 相似文献
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《Semiconductor Manufacturing, IEEE Transactions on》2008,21(2):248-255
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Increased oxygen precipitation in CZ silicon wafers covered by a polysilicon layer has been observed after a high temperature
anneal. This study established that the low temperature anneal, inherent in the LPCVD polysilicon deposition process, is so
responsible for the enhanced oxygen precipitation effect. Temperature-time parameters were developed to match oxygen concentration
in the wafer material with preannealing (polysilicon deposition) temperatures to achieve various degrees of oxygen precipitation.
Data from this work show that interstitial oxygen reduction (δ Cox) saturation can be achieved after 100 min oxidation at 1150°C, if the polysilicon deposition temperature is between 670–700°C
(150 min for a 1.3 Μm polysilicon layer) and the interstitial oxygen concentration in the wafer is between 22 and 24 ppm.
A denuded zone of 20 Μm was obtained and can be observed on a chemically etched cross section. Chemically etched and decorated
defects in these samples with various degrees of oxygen precipitation are also displayed in these optical micrographs. 相似文献
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利用中子嬗变掺杂(NTD)技术制备的CZSi(NTDCZSi)片在高温退火时,由于辐照缺陷与直拉硅中杂质氧的相互作用,可以加速内吸除(IG)效应的实现,获得理想的表面清洁区和体内吸杂区.本文探讨了将NTD技术与IG技术相结合的问题,并讨论了NTDCZSi IG效应机理. 相似文献
8.
研究了N2和N2/NH3混合气两种不同气氛快速退火处理硅片对洁净区和氧沉淀分布的影响.研究发现:N2/NH3混合气氛处理的硅片在后序热处理中表层形成很薄的洁净区同时体内形成高密度的氧沉淀;而N2气氛处理的硅片的沽净区较厚、氧沉淀密度较低.但是两种气氛下延长恒温时间都可以降低洁净区厚度,增加氧沉淀密度.X射线光电子能谱和原子力显微镜扫描的结果显示N2/NH3混合气氛处理使表面出现了强烈的氮化反应,利用氮化反应町以解释快速退火气氛对洁净区分布的影响. 相似文献
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研究了N2和N2/NH3混合气两种不同气氛快速退火处理硅片对洁净区和氧沉淀分布的影响.研究发现:N2/NH3混合气氛处理的硅片在后序热处理中表层形成很薄的洁净区同时体内形成高密度的氧沉淀;而N2气氛处理的硅片的沽净区较厚、氧沉淀密度较低.但是两种气氛下延长恒温时间都可以降低洁净区厚度,增加氧沉淀密度.X射线光电子能谱和原子力显微镜扫描的结果显示N2/NH3混合气氛处理使表面出现了强烈的氮化反应,利用氮化反应町以解释快速退火气氛对洁净区分布的影响. 相似文献
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An experiment is reported on anisotropic etching in a CF4–O2plasma produced by high-voltage gas discharge. The process is applied to SiO2and is also effected on SiC, Si, C (diamond), and As2S3. It is shown that the etch rate is mainly dependent on the oxygen percentage, plasma parameters, and the wafer temperature. It is established that etch rate is maximal at oxygen percentages of 0.8–1.5%, discharge currents of 80–140 mA, and wafer temperatures of 390–440 K. The etching is found to be uniform within 1%. 相似文献
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H.S. Nguyen Z.H. Gan Zhe Chen V. Chandrasekar K. Prasad S.G. Mhaisalkar Ning Jiang 《Microelectronics Reliability》2006,46(8):1309-1314
Electromigration and electrical breakdown are two of the most important concerns in the reliability of modern electronic devices. The electromigration lifetimes and electrical breakdown field (EBD) in single damascene copper lines/porous polyarylene ether (PAE) dielectric with different diffusion barrier materials (i.e., amorphous-SiC:H and TaN/Ta) were studied. The results showed a “wafer edge effect” in both groups of samples. The electromigration lifetime of samples taken from the center of the wafer is five to nine times longer of those taken from the wafer edge in the accelerated test. The samples from wafer edge showed a bi-modal failure characteristic. It was also found that electromigration resistance of the structure with new diffusion barrier a-SiC:H/Ta was comparable to that with the conventional TaN/Ta. On the other hand, the electrical testing showed that EBD of the a-SiC:H/Ta structure is about twice of that with TaN/Ta barrier, indicating a significant improvement of the electrical performance. 相似文献
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研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h)+1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度. 相似文献
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Donor formation at 700 °C was studied by infrared absorption, etching, transmission electron microscope, resistivity, and spreading resistance measurements in Czochralski grown silicon. The donor concentration is related to the oxygen-precipitate density, oxygen reduction, and carbon reduction by annealing at 700 °C. The donor distribution corresponds to the distribution of oxygen precipitates observed after annealing. The proposed donor is an oxygen precipitate nucleated at a carbon site. The oxygen-related donor formation not only occurs in the bulk of samples but also in the denuded zone. Donor-related microdefects do not seriously influence the threshold voltage in metal-oxide-silicon field-effects-transistors, but are expected to decrease carrier lifetime at the surface of the denuded zone. 相似文献
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A new method to quantify the reliability risk for gate oxide with plasma induced charging damage (PID) is established. Based on existing antenna test methodology the quantity of inflicted damage is expressed in a physical meaningful number by means of a simple model applicable for thick oxides (>5 nm).This model takes trap activation, trap filling, detrapping and also traps generation under constant current test condition (“revealing stress”, “diagnostic stress”) into account. For the corresponding development of the measurable external supply voltage with time an equation is derived. Experimental test data from different oxide thicknesses are fitted to this model equation to obtain its main parameters, the cross section values. These cross section values describe the probabilities for the different trap/detrap processes during stress. Cross section values thus found extend published data for lower electric fields to high electric fields necessary for a fast test.The number of plasma induced traps, which was added to the oxide during wafer processing, can now be determined by applying an electron trapping rate (ETR) test method, and combining it with our dynamic trap generation/filling model. The obtained number of PID related traps opens a path to calculate the corresponding reduction of oxide lifetime. Real measurement data are used to illustrate the method and its applicability to fast wafer level reliability (fWLR) monitoring. 相似文献
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Timothy E. Turner 《Microelectronics Reliability》1996,36(11-12)
Wafer Level Reliability test techniques can be used to provide fast feedback process control information regarding the reliability of the product of a semiconductor process. The purpose of wafer level reliability (WLR) tests is the measurement of variation in the materials comprising the semiconductor device. They are not intended as modeling tools for the quantification of the effect of stress on these materials. As such, WLR tests must provide a repeatable stress, independent of normal process variation. The results of these tests will be a measurement of the “rate of degradation” of the basic circuit elements caused by a standard stress. 相似文献
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L. Galateanu 《Microelectronics Reliability》1997,37(10-11)
A wafer level in situ accelerated ageing method is proposed. A development of in situ techniques for building-in approach to reliability is introduced, because “in situ” does not refer to the electrical testing during the ageing but it is referring to the ageing process itself. A He-Ne laser irradiation of the reverse biased junction is used for accelerating the local degradation by deep level generation currents - the hot spots formation. The efficiency of the method for wafer reliability monitoring was experimentally proved on RF power transistors. 相似文献
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Ruofei Jia Xiaofeng Wu Wei Deng Xiujuan Zhang Liming Huang Kaifeng Niu Lifeng Chi Jiansheng Jie 《Advanced functional materials》2019,29(45)
Persistent photoconductivity (PPC) in organic phototransistors provides an opportunity and broad prospects to achieve many emerging applications in optoelectronic devices. However, a fundamental understanding of PPC behavior is still a key challenge impeding its practical applications. In this study, for the first time, a mechanism for electron trapping is presented in oxygen‐induced deep levels in organic semiconductors for the clarification of PPC behavior with solid evidence. Both theoretical simulation and experimental investigation unveil that oxygen in air atmosphere plays a decisive role in determining the PPC behavior. Oxygen molecules can induce deep defect levels in the energy bandgap of organic semiconductors, which will act as deep traps for photogenerated electrons. The trapped electrons will be maintained in the traps and undergo a very slow releasing process after light illumination, thus leading to a noticeable PPC behavior for the organic phototransistors. The proposed mechanism shows good universality and can be applicable to a host of organic semiconductors for explaining the PPC behaviors. This work reveals the significant role of oxygen in PPC behavior and also provides guidelines for controlling the unique PPC behavior toward device applications. 相似文献
19.
Pheromone Propagation Controller: The Linkage of Swarm Intelligence and Advanced Process Control 总被引:1,自引:0,他引:1
《Semiconductor Manufacturing, IEEE Transactions on》2009,22(3):357-372
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V. A. Gritsenko A. V. Shaposhnikov Yu. N. Novikov A. P. Baraban Hei Wong G. M. Zhidomirov M. Roger 《Microelectronics Reliability》2003,43(4):665-669
It has been long suggested that the SiOH defect is an electron or “water” trap in silicon dioxide based on some indirect evidences. In this work, quantum calculation on the capturing properties of non-bridging oxygen hole center with unpaired electron SiO√ and hydrogen defect SiOH in silicon oxide are performed with the ab initio density-functional method. It was found that the SiO√ defect is an electron trap and this defect should be the responsible candidate for better hardness against radiation for the metal–oxide-semiconductor gate oxide produced by wet oxidation. We found that the SiOH defect could not be an electron trap according to the present calculation results. 相似文献