基于超大点数FFT优化算法的研究与实现

针对应用系统对超大点数快速傅里叶变换(FFT)的性能需求不断提升,以及现有处理平台的资源对实现超大点数FFT的制约问题,该文提出一种超大点数FFT的实现方法。该方法通过优化铰链因子存储,采用行列号方式访问2维矩阵避免了3次显性转置,从而节省了内存资源;同时,通过分析处理器的分级存储结构特点,优化了矩阵行列划分规则,进而提高了行列访问效率。实验结果表明,该方法节约了近一半的内存资源,且有效提高了超大点数FFT的执行速度。     

大点数FFT的二维算法FPGA并行实现

针对目前高速实时信号处理对大点数快速傅里叶变换(FFT)的性能要求越来越高,提出了一种基于二维FFT算法,利用现场可编程门阵列(FPGA)快速实现的方法.该方法以现有的短数据量的FFT核为单元,通过并行处理实现了16M点数的FFT.这样不但解决了FPGA的IP核计算FFT点数少的问题,而且提高了FFT计算的速度.仿真试验结果表明,该方法准确可靠,易于硬件实现,运算速度快.     

长度为2^n的FFT运算基实现

大点数FFT运算是数字信号处理中关键技术环节,本文提出一种大点数FFT运算基的实现,该实现是根据[1]中所提出的算法,结合寄存器阵列模块和重排序模块,实现FFT运算基模块内部的数据传输和模式切换,以基4与基2为模块中的基本运算单元构成大点数的FFT运算基,在控制电路配合下实现快速傅里叶变换。该实现通过面向寄存器级的Simulink仿真模型,验证本文所设计模块功能的正确性和可行性,为基于大点数的FFT运算指出了一种实现方法。     

多核并行的大点数FFT、IFFT设计

FFT和IFFT是信号处理最常用的算法。随着技术发展需求的不断提高,FFT、IFFT点数越来越大。信号处理器逐步由单核向多处理器并行、多核并行方向发展。文中研究了大点数FFT、IFFT并行设计方法,把IFFT转换成FFT计算并将大点数FFT拆分成小点数运算。在TI C66788核处理器上实现了有缓冲和无缓冲的大点数FFT、IFFT设计。通过并行设计,实现大点数FFT、IFFT在8核处理器上并行计算。通过计算和传输并行、多核并行设计,提高了处理性能。     

一种高精度的大点数二维FFT处理器设计

基于传统的频域抽取快速傅里叶变换(FFT)算法以及二维FFT算法,设计了一种高精度的大点数FFT处理器。该处理单元采用一个状态机控制整个运算流程,针对小点数情况的一维FFT算法和大点数情况的二维FFT算法,该处理器都可以智能地选择合适的处理流程和缓存管理,自动地完成整个FFT运算而无需软件介入。在支持大点数的二维FFT算法的基础上,该设计还通过对旋转因子计算过程的优化,以提高在大点数情况下的精度表现,在4M长度的输入序列时可以获得130 dB以上的信噪比。     

一种基于FPGA的FFT阵列处理器

提出一种新的FFT信号处理器的实现方法 ,使用抽取算法在基于FPGA的FFT硬件处理IP上实现并行大点数快速傅立叶变换 ,由于采用专用FFT硬件处理与DSP相结合的处理结构 ,使处理速度大幅度提高。理论和仿真分析论证了该方法的有效性     

一种基于FPGA的FFT阵列处理器

提出一种新的FFT信号处理器的实现方法，使用抽取算法在基于FPGA的FFT硬件处理IP上实现并行大点数快速傅立叶变换，由于采用专用FFT硬件处理与DSP相结合的处理结构，使处理速度大幅度提高。理论和仿真分析论证了该方法的有效性。     

基于ADSP-TS201的大点数FFT实现

为了解决雷达信号处理中大点数脉压问题,将一维大点数FFT拆成二维实现。首先给出大点数FFT变换的数学原理,然后以96K点为例,介绍了其在通用处理器ADSP-TS201的实现过程。测试结果表明,所提出的处理方式不仅能正确实现大点数FFT变换,而且具有较好的实时性。     

超长点数FFT的设计与实现技术

随着宽带雷达系统所采用的信号带宽不断增加,为了实时完成脉冲压缩处理,需要进行超长点数FFT运算。本文提出一种超长点数FFT运算的实现方法。运用二维FFT算法,基于高性能FPGA处理平台,将超长点数FFT运算转换为两级短点数FFT的级联处理,并通过片外存储器解决片内存储资源有限的问题。实现结构上采用并行处理结构,显著提升了运算速度,可以实现在5ms内完成4M点数的FFT运算。实验结果表明,在相应的处理平台上,本文提出的超长点数FFT实现方法可以满足雷达系统的实时性需求,解决了宽带雷达实时脉冲压缩的关键问题。      

超长可变点数FFT处理器设计与实现

介绍了超长可变点数序列FFT处理器的实现方法。采取将一维大点数FFT转换为二维小点数子FFT处理的措施,减小了存储器规模。使用乒乓RAM将基本运算模块级联,形成流水线结构,可连续高速计算N点复数序列FFT/IFFT。用现场可编程门阵列(FPGA)实现了可计算1k~1M点序列长度可变的FFT/IFFT处理器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.