An apparatus for producing mechanical step pulses for biorheologic studies

A device to produce displacement step pulses for studying viscoelastic wave propagation in biological specimens was developed on the basis of condenser discharge through a solenoid. The amplitude and rise time of the pulse step can be adjusted by varying the condenser capacity, charging voltage, and distance between the armature and the electromagnet.     

Effects of die location on hot-carrier response of plasma-etchedNMOS devices

Plasma-process-induced charging voltage for a device may be positive (gate is positive with respect to the substrate) or negative depending on the location of the device on the wafer. The negative charging damage increases the number of trapped holes closer to Si-SiO ₂ interface while the positive charging damage does not. This number of trapped holes also depends on the antenna ratio. The trapped holes closer to the Si-SiO₂ interface gets compensated by hot electrons injected during hot-carrier stressing. Thus, the type of charging voltage and the antenna size determines the hot-carrier response of a device. In addition, the differences in hot-carrier response for devices with varying antenna ratio are shown to be varying linearly with the differences in prestress subthreshold characteristics. This finding has the potential to reduce the hot-carrier stressing time or determine the most vulnerable devices without actually carrying out the experiments     

Plasma damage in thin gate MOS dielectrics and its effect on device characteristics and reliability

Plasma process-induced damage continues to be a great threat and concern in the modern CMOS technologies. This article concentrates on NMOS vs. PMOS device sensitivity to plasma charging originating from the various processing steps. This dependence is studied with respect to the gate oxide thickness, and large antenna devices are used to evaluate device yield, latent damage, and residual effect of charging on device performance and reliability. Specific studies are performed to explore the resistance to the charging damage in CMOS devices with a 50 Å gate oxide grown with various oxidation processes.     

3-D computer simulation of single-electron charging in siliconnanocrystal floating gate flash memory devices

The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrodinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, V_T , variation with single-electron charging as a function of design parameters     

基于PWM技术蓄电池充放电与检测系统设计

为解决传统蓄电池充放电装置功率因数低、高谐波污染等不足,针对电力机车用15kVA蓄电池,设计了基于PWM整流逆变技术的蓄电池充放电装置与检测监控系统。装置用作充电电源时,采用电流双闭环控制系统,实现分阶段恒流模式或恒压模式充电;用作蓄电池放电试验的负载时,将能量回馈电网。通过SPWM调制可实现放电功率的灵活调控。试验及检测结果表明该装置具有能量双向流动、网侧电流正弦化、功率因数高、功率灵活调控的特点。     

负性液晶材料电压保持率的研究

电压保持率(VHR)是表征液晶材料信赖性特性的重要参数之一,液晶材料的线残像特性与VHR相关。本文着重探讨了负性液晶材料在搭配不同PI材料,在不同电压、不同温度时VHR的表现。通过使用由不同PI材料制备的测试盒测量液晶材料在不同电压和温度下的VHR,从而得出负性液晶材料在不同条件下VHR的变化趋势。实验结果表明,测试盒的VHR值受到液晶材料和PI材料的共同影响。|Δε|较大的液晶材料VHR相对较低。在常温时,伴随充电电压升高,测试盒VHR呈下降趋势;而在高温时趋势相反,伴随充电电压升高,VHR呈上升趋势。|Δε|较高的液晶材料含有较多极性成分,易出现相对较低的VHR。常温时,离子运动较慢,伴随充电电压升高测试盒离子析出持续增加,离子析出增加会使测试盒VHR呈下降趋势。而高温时,离子活性较强,测试盒会析出大量离子,而大量离子不纯物的存在会使液晶盒在充电放时产生直流电残留,伴随充电电压升高,直流电残留电会更加严重,因此导致测试盒伴随VHR呈上升趋势。     

High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics

An InP-based high-speed optical modulator is presented. The Schottky-i-n waveguide structure on InP-based material was used to reduce the switching voltage V_pi and the excess loss, while maintaining high-modulation efficiencies. To minimize residual amplitude modulation and to improve power handling capability, the bulk electrooptic effect in InGaAlAs was utilized for phase shifting. As a result, a simple structure InAlAs-InGaAlAs Mach-Zehnder optical modulator with traveling-wave electrodes was fabricated and characterized. This device achieved a switching voltage V_pi of 3.6 V, extinction ratio (>23 dB) and high-speed operation at 1.55-mum wavelength     

Temperature study of the dielectric polarization effects of capacitive RF MEMS switches

This paper investigates both theoretically and experimentally the dielectric charging effects of capacitive RF microelectromechanical system switches with silicon nitride as dielectric layer. Dielectric charging caused by charge injection under voltage stress was observed. The amphoteric nature of traps and its effect on the switch operation were confirmed under both positive and negative control voltages. It has been confirmed that charging is a complicated process, which can be better described through the stretched exponential relaxation. This mechanism is thermally activated with an activation energy being calculated from the temperature dependence of the capacitance transient response. The charging mechanism, which is responsible for the pull-out voltage and the device failure, is also responsible for the temperature-induced shift of the capacitance minimum bias.     

36kV/10kW CO2激光器充电电源的研制

为了改善现有CO2激光器工频LC谐振充电时充电电压随激光器工作频率升高而降低、影响激光输出的稳定性和光束质量,不利于装置的小型化和轻量化的问题。采用全桥逆变结构和串联谐振软开关电路,研究了36kV/10kW高频高压充电电源。该电源系统采用三相380V交流电作为供电系统,大功率智能功率模块作为全桥逆变电路。逆变交流信号经串联谐振电路及高频脉冲变压器得到高压脉冲信号,高压脉冲经整流给负载电容充电,电源应用电压电流双闭环控制系统,输出电压、电流经采样及放大后,反馈到电源控制芯片SG3525,芯片SG3525通过判断反馈信号的大小,控制输出脉冲宽度调制驱动信号的占空比。激光器放电频率为25Hz时,电源输出电压为37kV,峰值输出功率为13.05kW,充电效率为0.826。结果表明,该高频高压充电电源适合用作CO2激光器的高压充电电源。     

基于AVR单片机的智能充电器的设计与实现

介绍了以AVR单片机为核心智能充电器的控制原理,讨论了充电器的硬件结构和软件设计思想.该充电器对充电过程进行全面管理,描述了充电检测的关键技术,实现了智能充电.并对充电电源、电压进行自动检测调整,充电后自动转为恒压浮充状态,使充电过程按理想的充电曲线进行,达到既保护电池、又能使电池充满的最佳效果等要求.这种全新的智能充电方式,有效地解决了普通充电器将蓄电池"充坏"的技术难题,大幅度提高了蓄电池的实际循环寿命,是电动自动车、电动汽车的理想产品.     

A new UPS topology employing a PFC boost rectifier cascadedhigh-frequency tri-port converter

A new uninterruptible power supply (UPS) topology using the high-frequency tri-port UPS technique is proposed which presents the advantages of no-break power, low cost, input unity power factor, high power density, and high power conversion efficiency. Through the proposed circuit configuration, charging concept, and control strategy, the battery management is easily obtained by controlling the output voltage of the power-factor-correction (PFC) converter, which results in no additional power device being required for charging. The implementing circuit of the charging method is submitted to perform the two-stage charging, constant current charging, and constant voltage charging. The proposed technologies can be applied to the switching power supply with built-in UPS function featuring a low-cost solution for computer equipment, Finally, an experimental AC online UPS is built to verify the proposed concept, analysis, and control strategy     

The prospect of process-induced charging damage in future thin gate oxides

Gate oxide scaling effect on plasma charging damage is discussed for various IC fabrication processes such as metal etching, contact oxide etching, high current ion implantation, and via contact sputtering. Capacitance distortion, stress-induced leakage current, MOSFET characteristics, and circuit performance are used for evaluating the charging damage. We observed that very thin gate oxides are less susceptible to the charging damage because of their lower rate of interface damage, larger charge-to-breakdown, and less device determined stress voltage in the plasma system. We also discuss the diode protection scheme and design techniques for minimizing the charging damage. Latent damage exists after thermal annealing and can be revealed during the subsequent device operation causing circuit performance degradation. High density plasma etching is a trend of the etching technology as it provides better anisotropy, selectivity, and uniformity. Its effects on oxide charging damage is compared with low-density plasma etching. The resistance to process-induced charging damage of future devices appears to be high. This is counter-intuitive and is a good tiding for the future of IC manufacturing. The emergence of alternative gate dielectric raises questions about charging damage that requires further studies.     

Evaluation of plasma charging damage in ultrathin gate oxides

Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 mm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides     

电磁脉冲对太阳电池的损伤效应研究

针对电磁脉冲对太阳电池造成的损伤效应,通过器件-电路联合仿真的方法,在建立硅太阳电池单元器件模型的基础上,分析研究了在阶跃脉冲电压的注入下,太阳电池性能的退化情况.结果表明:在电压幅值一定时,上升时间存在一临界值,当上升时间大于这一临界值时,太阳电池的性能退化是可恢复的,小于这一临界值时,太阳电池短路电流和开路电压将迅速衰减,填充因子也随之减小,电池部分失效甚至全部毁坏.在上升时间一定时,不同幅值的电压都会使得电池的短路电流和开路电压下降,但相对于开路电压,短路电流的下降并不显著,当电压幅值大于某一值时,开路电压下降趋于加快,随着电压幅值的不断增加,太阳电池将被击穿,从而完全失效.     

PMOS剂量计的稳定性研究

在室温条件下 ,研究了辐照偏置、总剂量和剂量率对 PMOS剂量计辐照剂量记录 -阈电压的稳定性影响 ,观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。分析认为慢界面陷阱中电荷的“充放电”是造成不稳定的首要原因。结果表明 ,该种由慢界面态造成的阈电压变化在每次开机测量下具有重复性。讨论了在 PMOS剂量计中提高稳定性的办法。     

高K栅堆叠结构MOSFET器件阈值电压不稳定度的半经验解析模型

A semi-empirical analytic model for the threshold voltage instability of MOSFET is derived from the Shockley-Read-Hall (SRH) statistics in this paper to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression of the filled trap density in terms of the dynamic time is derived from the SRH statistics. The semi-empirical analytic model of the threshold voltage instability is developed based on the MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by the extensive experimental data of the trapping and de-trapping stress from the different high k gate configuration.     

波导检波装置的失效模式及改善措施

文中报告了波导检波装置应用过程中主要存在的三种失效模式现状：常温下检波电压幅值发生跳变,在某频点跳变量达到120 mV;高低常三温下检波电压幅值变化率超过25%;在高低常三温下检波电压幅值不满足250～900 mV幅值范围的要求。对这三种失效模式进行了研究,主要从检波二极管、检波盒体对检波性能的影响展开了具体的讨论。文中重点论述了检波二极管的功率容量饱和特性、检波二极管的温度特性,推导出检波电压幅值温度变化率公式;同时还分析了高、低温情况下由于检波腔体尺寸的微小变化使得谐振状态改变从而对产品高、低温下检波电压幅值变化的影响。最后,依据失效模式的机理分析给出了产品的改善措施。     

实时监视光导热塑全息记录仪的研制

本文基于实时监视光导热塑全息技术,提出了一种实用的光导热塑全息记录仪.主要特点是结构合理、负载能力强、性能稳定、电压调节范围宽、安全系数高.电晕充电器小巧透明、充电均匀.使用该仪器,能够录制出衍射强,信噪比高的优质全息图.文中介绍了仪器原理、结构与特性,给出了应用结果.     

一种指纹锁电量智能检测及充电装置的设计

随着科学技术与经济的快速发展,以及智能家居的不断升级,这种在打开方式上完全不同于机械锁的集指纹、密码与人脸识别于一体的智能锁逐渐得到了现代人们的青睐。文章论述了一种指纹锁电量智能检测及充电装置的设计,首先通过磁性触点机构的闭合来连通充电电路,接着利用电量检测芯片检测可充电电池的电量,然后将检测结果与低电压阈值比较判断是否需要智能充电,从而解决指纹锁长久稳定供电的问题。     

Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales

The purpose of this work is to investigate the dynamic behaviour of Fowler–Nordeim injection through EEPROM tunnel oxides, in conditions representative of the standard device operation. An experimental procedure based on the acquisition of current transients induced by trapezoidal-shape short voltage pulses is presented. It is then used to evidence a rapid positive charging and to determine some of its properties. Implications regarding the device behaviour and modelling are finally discussed.