硅衬底片上螺旋电感宽带2π等效电路模型

针对高损耗硅衬底,基于部分元等效电路方法和全耦合变压器模型,建立了一种新的片上螺旋电感物理模型.该模型考虑了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感中串联电感和串联电阻频率特性的制约,并通过2π等效电路结构计入了电感中寄生电容的分布特性.通过与全波分析方法对比,验证了在15GHz范围内由该模型导出的等效电感、等效电阻和Q值误差均在8%以内.该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨.     

硅衬底片上螺旋电感宽带2π等效电路模型

针对高损耗硅衬底,基于部分元等效电路方法和全耦合变压器模型,建立了一种新的片上螺旋电感物理模型.该模型考虑了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感中串联电感和串联电阻频率特性的制约,并通过2π等效电路结构计入了电感中寄生电容的分布特性.通过与全波分析方法对比,验证了在15GHz范围内由该模型导出的等效电感、等效电阻和Q值误差均在8%以内.该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨.     

宽带硅衬底RF片上螺旋电感物理模型

针对高损耗硅衬底,源自部分元等效电路方法考虑了趋肤效应和邻近效应对螺旋电感中串联电感L_s、串联电阻R_s频率特性的制约,并基于全耦合变压器模型计入了复杂的衬底涡流损耗,从而建立了一种新的片上螺旋电感物理模型.通过与全波分析方法对比,验证了在20GHz范围内由该模型导出的等效电感L_eff、等效电阻R_eff和Q值误差仅在7%以内.该模型可望用于硅基射频集成电路中电感进一步的理论探讨和优化设计.     

片上螺旋电感集总模型中衬底因子的分析与拟合

石英、高阻SOI、高阻硅等衬底上实现的电感具有比低电阻率衬底的电感更优的高频性能,因而研究基于不同衬底的电感性能,并在高频模型中进行精确的衬底因子表征就显得十分重要.综合考虑高频下的趋肤效应和邻近效应及衬底电磁损耗对电感性能的影响,实现了片上螺旋电感的集总元件模型,并通过与SOI、石英衬底的电感仿真参数及高阻硅衬底的电感测试参数进行了模型验证,结果表明,该模型拟合的S参数及Q值曲线能与仿真及测试结果吻合,同时模型中衬底因子的提取值与衬底性质相符合,因而该模型适用于片上电感的模拟与设计.     

硅基片上螺旋电感宽带物理模型

针对高损耗硅衬底,基于部分元等效电路方法和麦克斯韦电磁场理论,计入了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感串联电感Ls与串联电阻Rs频率特性的制约,并通过n等效电路结构模拟了寄生电容的分布特性,从而建立了一种新的片上螺旋电感物理模型。通过与全波分析方法对比,验证了在20GHz范围内由该模型导出的等效电感Leff,等效电阻Reff和Q值误差均在7%以内。该模型可望用于硅基射频集成电路中螺旋电感进一步的理论探讨和优化设计。     

新颖的衬底pn结隔离型硅射频集成电感

提出了一种新的减小硅集成电感衬底损耗的方法.这种方法是直接在硅衬底形成间隔的pn结隔离以阻止螺旋电感诱导的涡流.衬底pn结间隔能用标准硅工艺实现而不需另外的工艺.本文设计和制作了硅集成电路,测量了硅集成电感的S参数并且从测量数据提取了电感的参数.研究了衬底结隔离对硅集成电感的品质因素Q的影响.结果表明一定深度的衬底结隔离能够取得很好的效果.在3GHz,衬底pn结隔离能使电感的品质因素Q值提高40%.     

新颖的衬底pn结隔离型硅射频集成电感

提出了一种新的减小硅集成电感衬底损耗的方法 .这种方法是直接在硅衬底形成间隔的 pn结隔离以阻止螺旋电感诱导的涡流 .衬底 pn结间隔能用标准硅工艺实现而不需另外的工艺 .本文设计和制作了硅集成电路 ,测量了硅集成电感的 S参数并且从测量数据提取了电感的参数 .研究了衬底结隔离对硅集成电感的品质因素 Q的影响 .结果表明一定深度的衬底结隔离能够取得很好的效果 .在 3GHz,衬底 pn结隔离能使电感的品质因素 Q值提高4 0 % .     

衬底结构特征对硅基螺旋电感性能的影响

使用三维电磁场模拟的方法对不同硅衬底结构螺旋电感进行了模拟和分析.通过改变衬底的电导率、隔离层的厚度以及隔离层的材料、衬底引入硅锗合金层等模拟,分析了电感性能的变化.结果表明随着电导率的减小,电感的性能会增强,但改善的幅度会逐渐减小.厚的SiO2隔离层有利于减小衬底损耗,但是会给工艺增加难度.采用低k材料作为隔离层是改善电感性能的一种比较理想的方法.     

衬底结构特征对硅基螺旋电感性能的影响

使用三维电磁场模拟的方法对不同硅衬底结构螺旋电感进行了模拟和分析.通过改变衬底的电导率、隔离层的厚度以及隔离层的材料、衬底引入硅锗合金层等模拟,分析了电感性能的变化.结果表明随着电导率的减小,电感的性能会增强,但改善的幅度会逐渐减小.厚的SiO2隔离层有利于减小衬底损耗,但是会给工艺增加难度.采用低k材料作为隔离层是改善电感性能的一种比较理想的方法.     

射频高损耗硅基双互连线建模

针对高损耗硅衬底,采用部分元等效电路法和准静磁积分公式,将衬底涡流等效为衬底镜像电流,建立射频硅基双互连线等效电路模型。该模型考虑了趋肤效应、邻近效应和衬底损耗对互连线串联电感Ls和串联电阻Rs频率特性的制约。通过与全波分析方法对比,验证了在20 GHz范围内由该模型导出的互连线等效电感L、等效电阻R误差均在8%以内。该模型可望应用于硅基射频集成电路设计。     

A new wideband compact model for spiral inductors in RFICs

A new wide-band compact model for planar spiral inductors on lossy silicon substrate is presented. Transformer loops are used in the series branch of the equivalent circuit model to include the effects of the frequency-dependent losses, in particular eddy-current loss in the silicon substrate. The new compact model and the standard 9-element model are extracted from measurement data of a typical 1.5-nH spiral fabricated on a low-resistivity CMOS substrate over a frequency range of 0.1 to 10 GHz. The frequency-dependent series resistance and inductance as well as the quality factor obtained with the new model are in excellent agreement with the measured results     

A new compact model for monolithic transformers in silicon-based RFICs

A new compact model for monolithic transformers on silicon substrates is presented. The new lumped-element equivalent circuit model employs transformer loops to represent skin and proximity effects including eddy current loss in the windings of the transformer. In addition to the self-resistances and self-inductances of the windings, the effects of the frequency-dependent mutual resistance and mutual inductance are included in the model. The new compact model has been applied to a stacked transformer on a 10-/spl Omega//spl middot/cm CMOS substrate. The extracted circuit model shows very good agreement with data obtained by full-wave electromagnetic simulation and measurement over the frequency range of 0.1-10GHz.     

Analysis, design, and optimization of spiral inductors andtransformers for Si RF ICs

Silicon integrated circuit spiral inductors and transformers are analyzed using electromagnetic analysis. With appropriate approximations, the calculations are reduced to electrostatic and magnetostatic calculations. The important effects of substrate loss are included in the analysis. Classic circuit analysis and network analysis techniques are used to derive two-port parameters from the circuits. From two-port measurements, low-order, frequency-independent lumped circuits are used to model the physical behavior over a broad-frequency range. The analysis is applied to traditional square and polygon inductors and transformer structures as well as to multilayer metal structures and coupled inductors. A custom computer-aided-design tool called ASITIC is described, which is used for the analysis, design, and optimization of these structures. Measurements taken over a frequency range from 100 MHz to 5 GHz show good agreement with theory     

A guided-wave optical arbiter circuit

An optical waveguide circuit which can be used as an arbiter for priority allocation in data communication system is proposed. The waveguide circuit was fabricated by silica deposition and its basic performance as an arbiter was measured. The average insertion loss and the crosstalk level for a 10-port circuit was measured to be 9.8 and -26.8 dB, respectively. In obtaining a large number of fan-out on a compact substrate, it is important to provide large refractive-index difference between the core and cladding to allow for a sharp bend and to decrease the excess branching loss. The number of fan-out of about 250 is expected on a 50-mm-square substrate.     

零电压开关预燃电源的研究

本文提出了在脉冲氙灯预燃电路中将着火电压与预燃电流由不同电路来提供的设计思想 ,并采用了零电压开关技术。对逆变器的工作过程进行了数学分析 ,对功率开关管实现零电压开通的条件进行了讨论。实验证明该预燃电源在负载断路和短路情况下都能正常工作 ,功率开关管的开关损耗非常小 ,开关频率可达 10 0 k Hz,减小了电源体积 ,提高了电源效率 ,适用于各种尺寸的脉冲氙灯。     

40 GHz compact TFMS meander-line bandpass filter on silicon substrate

Presented is a compact millimetre-wave bandpass filter using a thin-film microstrip meander line on standard 0.18 mum CMOS silicon substrate without any post-processing step yet still reducing the substrate loss and crosstalk to a large extent. To miniaturize overall circuit size, a half-wavelength resonator is constructed in meander-line configuration and its resonant frequency is designed to be 40 GHz. The prototype single-resonator bandpass filter occupies a circuit area of 210 times 210 mum on silicon. Measured insertion loss is 2.5 dB, which agrees well with the design value in the simulations.     

Design and analysis of a super compact wide-band bandpass filter based on metamaterial resonators

In this paper, a novel compact wide-band bandpass filter (BPF) with a wide frequency range is presented. This filter consisting of a multi-mode resonator (MMR) and four metamaterial unit-cells benefits from a very compact size. Unit-cells based on a complementary spiral resonator (CSR) including a metallic via, improve both upper and lower stopband rejection and compensate the insertion loss (I.L) within the passband altogether. This wide-band filter presents a 3-dB bandwidth of 7.7 GHz, ranging from 3 GHz to 10.7 GHz and the Insertion loss is less than 0.7 dB over the passband. The measured results are in good agreement with both the full-wave electromagnetic simulation and the proposed circuit model results. The dimension of the fabricated filter is 0.128 λ × 0.1 λ (i.e., 5.6 × 4.4 mm²). This filter is considerably compact compared to the other wide-band bandpass filters with the same substrate.     

表面镀铜悬浮厚单晶硅螺线MEMS电感

报道了一种由悬浮在玻璃衬底上的表面镀铜平面单晶硅螺线构成的新型MEMS电感,可消除衬底损耗及减小电阻损耗.采用一种硅玻璃键合-深刻蚀成型释放工艺并结合无电镀技术制作该电感,形成厚约40μm的硅螺线,在硅螺线表面镀有高保形厚铜镀层,在铜镀层表面镀有起钝化保护作用的薄镍镀层.该电感的自谐振频率超过15GHz,在11.3GHz下,品质因子达到约40,电感值超过5nH.基于该电感的简化等效电路模型,采用一种特征函数法进行了参数提取,模拟结果与测量结果符合得很好.     

A Compact Broad-Band Thin-Film Lumped-Element L-Band Circulator

Impedance matrices including magnetic losses are developed for a number of lumped-element ferrite-loaded symmetrical three-port junctions. The scattering matrix eigenvalues corresponding to these matrices are determined as functions of frequency and circuit parameters and are used to analyze these three-ports with emphasis on their properties as circulators. A very compact broad-band thin-film lumped-element circulator is derived from the idealized equivalent circuit. An experimental model approximately represented by this circuit is shown to have a 20-dB isolation bandwidth of greater than 30 percent with an insertion loss of less than 0.6 decibel. A switchable circulator which requires no magnetic-field switching is treated using this same analytical approach. It is suggested that this type of analysis together with additional experimental refinement of equivalent circuits will lead eventually to a computerized design of lumped-element circulators.     

基于LTCC的双频段滤波器设计

为了实现高选择性的小型双频段滤波器,该文基于LC等效电路分析法和微波网络分析法,通过建立等效模型、进行等效电路分析及对传输模型的导纳矩阵分析,提出了一种工作在GSM/WLAN的新型低温共烧陶瓷(LTCC)双频滤波器结构。该结构采用介电常数5.9、层厚0.1 mm、型号为Ferro A6的LTCC介质基板加工,在7 mm × 7 mm × 0.5 mm的尺寸下实现了各通带两边都有传输零点的高选择性双频滤波特性。本研究丰富和发展了LTCC双频滤波器的设计方法。