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The synthesis and characterization of size‐separated silicon nanocrystals functionalized with a heteroatom‐substituted organic capping group, allylphenylsulfide, via photochemical hydrosilylation are described for the first time. These silicon nanocrystals form colloidally stable and highly photoluminescent dispersions in non‐polar organic solvents with an absolute quantum yield as high as 52% which is 20% above that of the allylbenzene analogue. Solutions of the size‐separated fractions are characterized over time to monitor the effect of aging in air by following the change of their photoluminescence and absolute quantum yields, supplemented by transmission electron microscopy.  相似文献   

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The microscopic origin of the bright nanosecond blue‐green photoluminescence (PL), frequently reported for synthesized organically terminated Si quantum dots (Si‐QDs), has not been fully resolved, hampering potential applications of this interesting material. Here a comprehensive study of the PL from alkyl‐terminated Si‐QDs of 2–3 nm size, prepared by wet chemical synthesis is reported. Results obtained on the ensemble and those from the single nano‐object level are compared, and they provide conclusive evidence that efficient and tunable emission arises due to radiative recombination of electron–hole pairs confined in the Si‐QDs. This understanding paves the way towards applications of chemical synthesis for the development of Si‐QDs with tunable sizes and bandgaps.  相似文献   

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畅庚榕  刘明霞  马飞  徐可为 《材料导报》2018,32(18):3104-3109
通过磁控溅射技术制备了非晶态富硅的碳化硅锗(Si_(1-x-y)Ge_xC_y)薄膜,经过后续高温热处理,形成各向异性硅纳米晶,其微结构和光学特性由高分辨电镜、光致发光及光吸收实验进行表征,研究了各向异性应变对硅纳米晶形态和光学特性的影响,阐述了各向异性硅纳米晶的形成机理。研究表明,在各向异性应变能的诱导下硅纳米晶沿着〈002〉、〈113〉和〈220〉取向择优生长,形成具有多形态的硅纳米晶,显著改变了其能级结构,在2.57eV和2.64eV的位置硅纳米晶存在PL发射光谱,光吸收波段明显增加,可以同时吸收从红外到紫外(2.57eV,1.89eV,1.2eV和0.96eV)的光子,且光吸收范围随硅锗(RS/G)比例可调,故有望提高光伏电池的光量子产额。  相似文献   

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Lead-free layered double perovskite nanocrystals (NCs), i.e., Cs4M(II)M(III)2Cl12, have recently attracted increasing attention for potential optoelectronic applications due to their low toxicity, direct bandgap nature, and high structural stability. However, the low photoluminescence quantum yield (PLQY, <1%) or even no observed emissions at room temperature have severely blocked the further development of this type of lead-free halide perovskites. Herein, two new layered perovskites, Cs4CoIn2Cl12 (CCoI) and Cs4ZnIn2Cl12 (CZnI), are successfully synthesized at the nanoscale based on previously reported Cs4CuIn2Cl12 (CCuI) NCs, by tuning the M(II) site with different transition metal ions for lattice tailoring. Benefiting from the formation of more self-trapped excitons (STEs) in the distorted lattices, CCoI and CZnI NCs exhibit significantly strengthened STE emissions toward white light compared to the case of almost non-emissive CCuI NCs, by achieving PLQYs of 4.3% and 11.4% respectively. The theoretical and experimental results hint that CCoI and CZnI NCs possess much lower lattice deformation energies than that of reference CCuI NCs, which are favorable for the recombination of as-formed STEs in a radiative way. This work proposes an effective strategy of lattice engineering to boost the photoluminescent properties of lead-free layered double perovskites for their future warm white light-emitting applications.  相似文献   

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Some 25 years ago it was found that semiconductor nanocrystals emitted light. Since then tremendous progress has been made with respect to increasing the emission quantum yields, extending the spectral range that may be addressed, from the UV across to the near infrared, and improving the color purity. Here some major lines in these developments are reviewed, touching on milestones as well as on the principles of the most successful preparative approaches.  相似文献   

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Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect‐gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect‐gap nature. Here, we propose a solution to this long‐standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E( k ) band‐structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole‐allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.  相似文献   

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Colloidal core/shell nanocrystals contain at least two semiconductor materials in an onionlike structure. The possibility to tune the basic optical properties of the core nanocrystals, for example, their fluorescence wavelength, quantum yield, and lifetime, by growing an epitaxial‐type shell of another semiconductor has fueled significant progress on the chemical synthesis of these systems. In such core/shell nanocrystals, the shell provides a physical barrier between the optically active core and the surrounding medium, thus making the nanocrystals less sensitive to environmental changes, surface chemistry, and photo‐oxidation. The shell further provides an efficient passivation of the surface trap states, giving rise to a strongly enhanced fluorescence quantum yield. This effect is a fundamental prerequisite for the use of nanocrystals in applications such as biological labeling and light‐emitting devices, which rely on their emission properties. Focusing on recent advances, this Review discusses the fundamental properties and synthesis methods of core/shell and core/multiple shell structures of II–VI, IV–VI, and III–V semiconductors.

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采用磁控共溅射结合快速光热退火技术在单晶硅和石英衬底上制备了含硅量子点的周期性梯度富硅SiNx薄膜(梯度薄膜)和单层富硅SiNx薄膜(单层薄膜)。采用Raman光谱、掠入射X射线衍射(GIXRD)、透射电子显微镜(TEM)、傅里叶变换红外(FTIR)光谱和光致发光(PL)光谱分析了薄膜的结构特性、键合特性和发光特性。Raman光谱、GIXRD和TEM结果表明, 梯度薄膜和单层薄膜中的硅量子点晶化率分别为41.7%和39.2%; 梯度薄膜的硅量子点密度是单层薄膜的5.4倍。FTIR光谱结果显示两种薄膜均为富硅氮化硅薄膜, 梯度薄膜的硅含量小于单层薄膜。PL光谱结果表明梯度薄膜中的辐射复合缺陷少于单层薄膜。  相似文献   

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巯基包覆CdSe和CdSe/CdS核壳纳米晶的水相合成与表征   总被引:2,自引:0,他引:2  
利用水相合成的方法制备了巯基包覆的具有较高荧光量子产率的CdSe和CdSe/CdS纳米晶.水相合成方法的优点是原料低廉、安全可靠和重复性高,缺点是纳米晶的尺寸分布较宽,发光效率不是很高.采用X-射线粉末衍射、吸收和荧光等光谱手段对纳米晶的平均尺度、粒径分布、晶体结构及发光特性进行了表征。在77K到300K的温度范围内,随着温度降低,CdSe纳米晶的发光峰逐渐蓝移,而CdSe/Cds纳米晶发光峰位基本不随温度变化而变化.此外,在325nm激光辐照下,CdSe/CdS纳米晶的荧光寿命比CdSe纳米晶延长了6倍左右,稳定性大幅度提高.以上结果表明,核壳结构的CdSe/CdS纳米晶具有较高的发光效率和良好的稳定性,具有广阔的应用前景.  相似文献   

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Colloidal type II CdTe/CdSe nanocrystals were synthesized by sequential addition of a tri-n-octylphosphine telluride (TOPTe)/TOP solution and several shell-precursor solutions to a CdO/TOP solution; the shell-precursor solutions consisted of CdO and TOPSe in TOP. For the growth of the CdTe core, the TOPTe/TOP solution was swiftly added to the CdO/TOP solution at a higher temperature (300 degrees C) than the growth temperature (250 degrees C). For the growth of the CdSe shell, in contrast, the CdO/TOPSe/TOP solution was slowly added to the CdTe/TOP solution at a lower temperature than the growth temperature (200-240 degrees C). The temporal evolution of the optical properties of the growing core-shell nanocrystals was monitored in detail. During the growth of the CdSe shell, the core-shell nanocrystals exhibited interesting changes in photoluminescence (PL) properties. The highest PL efficiency (approximately 38 %) was detected from core-shell nanocrystals with a CdSe shell thickness of 0.4-0.5 nm (indicated by TEM); the formation of the first monolayer is proposed. Our synthetic approach is well suited to a practical realization of engineering materials with bandgaps in the near-IR and IR spectral ranges.  相似文献   

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