Roll‐to‐Roll Cohesive,Coated, Flexible,High‐Efficiency Polymer Light‐Emitting Diodes Utilizing ITO‐Free Polymer Anodes

This paper reports solution‐processed, high‐efficiency polymer light‐emitting diodes fabricated by a new type of roll‐to‐roll coating method under ambient air conditions. A noble roll‐to‐roll cohesive coating system utilizes only natural gravity and the surface tension of the solution to flow out from the capillary to the surface of the substrate. Because this mechanism uses a minimally cohesive solution, the roll‐to‐roll cohesive coating can effectively realize an ultra‐thin film thickness for the electron injection layer. In addition, the roll‐to‐roll cohesive coating enables the fabrication of a thicker polymer anode film more than 250 nm at one time by modification of the surface energy and without wasting the solution. It is observed that the standard sheet resistance deviation of the polymer anode is only 2.32 Ω/□ over 50 000 bending cycles. The standard sheet resistance deviation of the polymer anode in the different bending angles (0 to 180°) is 0.313 Ω/□, but the case of the ITO‐PET is 104.93 Ω/□. The average surface roughness of the polymer anode measured by atomic force microscopy is only 1.06 nm. Because the surface of the polymer anode has a better quality, the leakage current of the polymer light‐emitting diodes (PLEDs) using the polymer anode is much lower than that using the ITO‐PET substrate. The luminous power efficiency of the two devices is 4.13 lm/W for the polymer anode and 3.21 lm/W for the ITO‐PET. Consequently, the PLEDs made by using the polymer anode exhibited 28% enhanced performance because the polymer anode represents not only a higher transparency than the ITO‐PET in the wavelength of 560 nm but also greatly reduced roughness. The optimized the maximum current efficiency and power efficiency of the device show around 6.1 cd/A and 5.1 lm/W, respectively, which is comparable to the case of using the ITO‐glass.     

Chiral Octahydro‐Binaphthol Compound‐Based Thermally Activated Delayed Fluorescence Materials for Circularly Polarized Electroluminescence with Superior EQE of 32.6% and Extremely Low Efficiency Roll‐Off

Circularly polarized organic light‐emitting diodes (CP‐OLEDs) are particularly favorable for the direct generation of CP light, and they demonstrate a promising application in 3D display. However, up to now, such CP devices have suffered from low brightness, insufficient efficiency, and serious efficiency roll‐off. In this study, a pair of octahydro‐binaphthol ( OBN )‐based chiral emitting enantiomers, (R/S)‐OBN‐Cz , are developed by ingeniously merging a chiral source and a luminophore skeleton. These chirality–acceptor–donor (C–A–D)‐type and rod‐like compounds concurrently generate thermally activated delayed fluorescence with a small ΔE_ST of 0.037 eV, as well as a high photoluminescence quantum yield of 92% and intense circularly polarized photoluminescence with dissymmetry factors (|g_PL|) of ≈2.0 × 10^?3 in thin films. The CP‐OLEDs based on (R/S)‐OBN‐Cz enantiomers not only display obvious circularly polarized electroluminescence signals with a |g_EL| of ≈2.0 × 10^?3, but also exhibit superior efficiencies with maximum external quantum efficiency (EQE_max) up to 32.6% and extremely low efficiency roll‐off with an EQE of 30.6% at 5000 cd m^?2, which are the best performances among the reported CP devices to date.     

A Highly Reversible Zn Anode with Intrinsically Safe Organic Electrolyte for Long‐Cycle‐Life Batteries

Dendrite and interfacial reactions have affected zinc (Zn) metal anodes for rechargeable batteries many years. Here, these obstacles are bypassed via adopting an intrinsically safe trimethyl phosphate (TMP)‐based electrolyte to build a stable Zn anode. Along with cycling, pristine Zn foil is gradually converted to a graphene‐analogous deposit via TMP surfactant and a Zn phosphate molecular template. This novel Zn anode morphology ensures long‐term reversible plating/stripping performance over 5000 h, a rate capability of 5 mA cm^?2, and a remarkably high Coulombic efficiency (CE) of ≈99.57% without dendrite formation. As a proof‐of‐concept, a Zn–VS₂ full cell demonstrates an ultralong lifespan, which provides an alternative for electrochemical energy storage devices.     

All‐Solution‐Processed Pure Formamidinium‐Based Perovskite Light‐Emitting Diodes

All‐solution‐processed pure formamidinium‐based perovskite light‐emitting diodes (PeLEDs) with record performance are successfully realized. It is found that the FAPbBr₃ device is hole dominant. To achieve charge carrier balance, on the anode side, PEDOT:PSS 8000 is employed as the hole injection layer, replacing PEDOT:PSS 4083 to suppress the hole current. On the cathode side, the solution‐processed ZnO nanoparticle (NP) is used as the electron injection layer in regular PeLEDs to improve the electron current. With the smallest ZnO NPs (2.9 nm) as electron injection layer (EIL), the solution‐processed PeLED exhibits a highest forward viewing power efficiency of 22.3 lm W^?1, a peak current efficiency of 21.3 cd A^?1, and an external quantum efficiency of 4.66%. The maximum brightness reaches a record 1.09 × 10⁵ cd m^?2. A record lifetime T₅₀ of 436 s is achieved at the initial brightness of 10 000 cd m^?2. Not only do PEDOT:PSS 8000 HIL and ZnO NPs EIL modulate the injected charge carriers to reach charge balance, but also they prevent the exciton quenching at the interface between the charge injection layer and the light emission layer. The subbandgap turn‐on voltage is attributed to Auger‐assisted energy up‐conversion process.     

Densely Populated Bismuth Nanosphere Semi‐Embedded Carbon Felt for Ultrahigh‐Rate and Stable Vanadium Redox Flow Batteries

The elaborate spatial arrangement and immobilization of highly active electrocatalysts inside porous substrates are crucial for vanadium redox flow batteries capable of high‐rate charging/discharging and stable operation. Herein, a type of bismuth nanosphere/carbon felt is devised and fabricated via the carbothermic reduction of nanostructured bismuth oxides. The bismuth nanospheres with sizes of ≈25 nm are distributed on carbon fiber surfaces in a highly dispersed manner and its density reaches up to ≈500 pcs µm^?2, providing abundant active sites. Besides, a unique bismuth nanosphere semi‐embedded carbon fiber structure with strong interfacial Bi? C chemical bonding is spontaneously formed during carbothermic reactions, offering an excellent mechanical stability under flowing electrolytes. It shows that the bismuth nanosphere semi‐embedded carbon felt can effectively promote V(II)/V(III) redox reactions with appreciable catalytic activity. The battery with the present electrode sustains an energy efficiency of 77.1 ± 0.2% and an electrolyte utilization of 57.2 ± 0.2% even when a current density up to 480 mA cm^?2 is applied, which are remarkably higher than those of batteries with the bismuth nanoparticle/carbon felt synthesized by the electrodeposition method (62.6 ± 0.1%, 23.6 ± 0.2%). Further, the battery with the present electrode demonstrates a stable energy efficiency retention of 98.2% after 1000 cycles.     

Tin Sulfide‐Based Nanohybrid for High‐Performance Anode of Sodium‐Ion Batteries

Nanohybrid anode materials for Na‐ion batteries (NIBs) based on conversion and/or alloying reactions can provide significantly improved energy and power characteristics, while suffering from low Coulombic efficiency and unfavorable voltage properties. An NIB paper‐type nanohybrid anode (PNA) based on tin sulfide nanoparticles and acid‐treated multiwalled carbon nanotubes is reported. In 1 m NaPF₆ dissolved in diethylene glycol dimethyl ether as an electrolyte, the above PNA shows a high reversible capacity of ≈1200 mAh g^?1 and a large voltage plateau corresponding to a capacity of ≈550 mAh g^?1 in the low‐voltage region of ≈0.1 V versus Na⁺/Na, exhibiting high rate capabilities at a current rate of 1 A g^?1 and good cycling performance over 250 cycles. In addition, the PNA exhibits a high first Coulombic efficiency of ≈90%, achieving values above 99% during subsequent cycles. Furthermore, the feasibility of PNA usage is demonstrated by full‐cell tests with a reported cathode, which results in high specific energy and power values of ≈256 Wh kg^?1 and 471 W kg^?1, respectively, with stable cycling.     

H2O‐Etchant‐Promoted Synthesis of High‐Quality Graphene on Glass and Its Application in See‐Through Thermochromic Displays

Direct growth of graphene on glass can bring an innovative revolution by coupling the complementary properties of traditional glass and modern graphene (such as transparency and conductivity), offering brand new daily‐life related applications. However, preparation of high‐quality graphene on nonmetallic glass is still challenging. Herein, the direct route of low sheet resistance graphene on glass is reported by using in situ‐introduced water as a mild etchant and methane as a carbon precursor via chemical vapor deposition. The derived graphene features with large domain sizes and few amorphous carbon impurities. Intriguingly, the sheet resistance of graphene on glass is dramatically lowered down to ≈1170 Ω sq^?1 at the optical transmittance ≈93%, ≈20% of that derived without the water etchant. Based on the highly conductive and optical transparent graphene on glass, a see‐through thermochromic display is thus fabricated with transparent graphene glass as a heater. This work can motivate further investigations of the direct synthesis of high‐quality graphene on functional glass and its versatile applications in transparent electronic devices or displays.     

Stretchable Organometal‐Halide‐Perovskite Quantum‐Dot Light‐Emitting Diodes

Stretchable light‐emitting diodes (LEDs) and electroluminescent capacitors have been reported to potentially bring new opportunities to wearable electronics; however, these devices lack in efficiency and/or stretchability. Here, a stretchable organometal‐halide‐perovskite quantum‐dot LED with both high efficiency and mechanical compliancy is demonstrated. The hybrid device employs an ultrathin (<3 µm) LED structure conformed on a surface‐wrinkled elastomer substrate. Its luminescent efficiency is up to 9.2 cd A^?1, which is 70% higher than a control diode fabricated on the rigid indium tin oxide/glass substrate. Mechanical deformations up to 50% tensile strain do not induce significant loss of the electroluminescent property. The device can survive 1000 stretch–release cycles of 20% tensile strain with small fluctuations in electroluminescent performance.     

Blue fluorescent organic light emitting diodes with multilayered graphene anode

As an innovative anode for organic light emitting devices (OLEDs), we have investigated graphene films. Graphene has importance due to its huge potential in flexible OLED applications. In this work, graphene films have been catalytically grown and transferred to the glass substrate for OLED fabrications. We have successfully fabricated 2 mm × 2 mm device area blue fluorescent OLEDs with graphene anodes which showed 2.1% of external quantum efficiency at 1000 cd/m². This is the highest value reported among fluorescent OLEDs using graphene anodes. Oxygen plasma treatment on graphene has been found to improve hole injections in low voltage regime, which has been interpreted as oxygen plasma induced work function modification. However, plasma treatment also increases the sheet resistance of graphene, limiting the maximum luminance. In summary, our works demonstrate the practical possibility of graphene as an anode material for OLEDs and suggest a processing route which can be applied to various graphene related devices.     

Adlayer‐Free Large‐Area Single Crystal Graphene Grown on a Cu(111) Foil

To date, thousands of publications have reported chemical vapor deposition growth of “single layer” graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer‐free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter‐long ≈100 nm wide “folds,” separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi‐randomly in the polycrystalline graphene film. High‐performance field‐effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer‐free single crystal graphene film.     

Understanding and Manipulating the Interplay of Wide‐Energy‐Gap Host and TADF Sensitizer in High‐Performance Fluorescence OLEDs

Comprising an emitting layer (EML) constituting a wide‐energy‐gap host, a thermally activated delayed fluorescence (TADF) sensitizer and a conventional fluorescent dopant, TADF‐sensitizing‐fluorescence organic light‐emitting diodes (TSF‐OLEDs) highly depend on component interplay to maximize their performance, which, however, is still under‐researched. Taking the host type (TADF or non‐TADF) and the recombination position (on the host or on the TADF sensitizer) into consideration, the interplay of host and TADF sensitizer is comprehensively studied and manipulated. A wide‐energy‐gap host with TADF and recombination of charges on it are both required to maximize device performances by triggering multiple sensitizing processes to eliminate exciton losses. Based on those findings, a maximum external quantum efficiency (EQE)/power efficiency (PE) of 23.2%/76.9 lm W^?1 is realized with a newly developed TADF host, significantly outperforming the reference devices. Further device optimization leads to unprecedently high EQE/PE of 24.2%/89.5 lm W^?1 and a half‐lifetime of over 400 h at an initial luminance of 2000 cd m^?2, with the peak PE being the highest value among the reported TSF‐OLEDs. This work reveals the importance of manipulating the component interplay in EMLs, opening a new avenue toward highly efficient TSF‐OLEDs.     

A High‐Rate and Stable Quasi‐Solid‐State Zinc‐Ion Battery with Novel 2D Layered Zinc Orthovanadate Array

Zinc‐ion batteries are under current research focus because of their uniqueness in low cost and high safety. However, it is still desirable to improve the rate performance by improving the Zn²⁺ (de)intercalation kinetics and long‐cycle stability by eliminating the dendrite formation problem. Herein, the first paradigm of a high‐rate and ultrastable flexible quasi‐solid‐state zinc‐ion battery is constructed from a novel 2D ultrathin layered zinc orthovanadate array cathode, a Zn array anode supported by a conductive porous graphene foam, and a gel electrolyte. The nanoarray structure for both electrodes assures the high rate capability and alleviates the dendrite growth. The flexible Zn‐ion battery has a depth of discharge of ≈100% for the cathode and 66% for the anode, and delivers an impressive high‐rate of 50 C (discharge in 60 s), long‐term durability of 2000 cycles at 20 C, and unprecedented energy density ≈115 Wh kg^?1, together with a peak power density ≈5.1 kW kg^?1 (calculation includes masses of cathode, anode, and current collectors). First principles calculations and quantitative kinetics analysis show that the high‐rate and stable properties are correlated with the 2D fast ion‐migration pathways and the introduced intercalation pseudocapacitance.     

Nickelocene‐Precursor‐Facilitated Fast Growth of Graphene/h‐BN Vertical Heterostructures and Its Applications in OLEDs

The direct growth of high‐quality, large‐area, uniform, vertically stacked Gr/h‐BN heterostructures is of vital importance for applications in electronics and optoelectronics. However, the main challenge lies in the catalytically inert nature of the hexagonal boron nitride (h‐BN) substrates, which usually afford a rather low decomposition rate of carbon precursors, and thus relatively low growth rate of graphene. Herein, a nickelocene‐precursor‐facilitated route is developed for the fast growth of Gr/h‐BN vertical heterostructures on Cu foils, which shows much improved synthesis efficiency (8–10 times faster) and crystalline quality of graphene (large single‐crystalline domain up to ≈20 µm). The key advantage of our synthetic route is the utilization of nickel atoms that are decomposed from nickelocene molecules as the gaseous catalyst, which can decrease the energy barrier for graphene growth and facilitate the decomposition of carbon sources, according to our density functional theory calculations. The high‐quality Gr/h‐BN stacks are proved to be perfect anode/protecting layers for high‐performance organic light‐emitting diode devices. In this regard, this work offers a brand‐new route for the fast growth of Gr/h‐BN heterostructures with practical scalability and high crystalline quality, thus should propel its wide applications in transparent electrodes, high‐performance electronic devices, and energy harvesting/transition directions.     

Blocking Energy‐Loss Pathways for Ideal Fluorescent Organic Light‐Emitting Diodes with Thermally Activated Delayed Fluorescent Sensitizers

Organic light‐emitting diodes (OLEDs) based on thermally activated delayed fluorescence‐sensitized fluorescence (TSF) offer the possibility of attaining an ultimate high efficiency with low roll‐off utilizing noble‐metal free, easy‐to‐synthesize, pure organic fluorescent emitters. However, the performances of TSF‐OLEDs are still unsatisfactory. Here, TSF‐OLEDs with breakthrough efficiencies even at high brightnesses by suppressing the competitive deactivation processes, including direct charge recombination on conventional fluorescent dopants (CFDs) and Dexter energy transfer from the host to the CFDs, are demonstrated. On the one hand, electronically inert terminal‐substituents are introduced to protect the electronically active core of the CFDs; on the other hand, delicate device structures are designed to provide multiple energy‐funneling paths. As a result, unprecedentedly high maximum external quantum efficiency/power efficiency of 24%/71.4 lm W^?1 in a green TSF‐OLED are demonstrated, which remain at 22.6%/52.3 lm W^?1 even at a high luminance of 5000 cd m^?2. The work unlocks the potential of TSF‐OLEDs, paving the way toward practical applications.     

Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions

2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next‐generation optoelectronics since they can be stacked layer‐by‐layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice‐mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h‐BN/p‐MoTe₂/graphene/n‐SnS₂/h‐BN p–g–n junction, fabricated by a layer‐by‐layer dry transfer, demonstrates high‐sensitivity, broadband photodetection at room temperature. The combination of the MoTe₂ and SnS₂ of complementary bandgaps, and the graphene interlayer provides a unique vdW heterostructure with a vertical built‐in electric field for high‐efficiency broadband light absorption, exciton dissociation, and carrier transfer. The graphene interlayer plays a critical role in enhancing sensitivity and broadening the spectral range. An optimized device containing 5?7‐layer graphene has been achieved and shows an extraordinary responsivity exceeding 2600 A W^?1 with fast photoresponse and specific detectivity up to ≈10¹³ Jones in the ultraviolet–visible–near‐infrared spectrum. This result suggests that the vdW p–g–n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh‐sensitivity and broadband photonic detectors.     

Experimental study of the organic light emitting diode with a p-type silicon anode

We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO₂ buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m² at 17 V and 1800 mA/cm², the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO₂ buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode.     

Flexible and Binder‐Free Electrodes of Sb/rGO and Na3V2(PO4)3/rGO Nanocomposites for Sodium‐Ion Batteries

Flexible power sources have shown great promise in next‐generation bendable, implantable, and wearable electronic systems. Here, flexible and binder‐free electrodes of Na₃V₂(PO₄)₃/reduced graphene oxide (NVP/rGO) and Sb/rGO nanocomposites for sodium‐ion batteries are reported. The Sb/rGO and NVP/rGO paper electrodes with high flexibility and tailorability can be easily fabricated. Sb and NVP nanoparticles are embedded homogenously in the interconnected framework of rGO nanosheets, which provides structurally stable hosts for Na‐ion intercalation and deintercalation. The NVP/rGO paper‐like cathode delivers a reversible capacity of 113 mAh g^?1 at 100 mA g^?1 and high capacity retention of ≈96.6% after 120 cycles. The Sb/rGO paper‐like anode gives a highly reversible capacity of 612 mAh g^?1 at 100 mA g^?1, an excellent rate capacity up to 30 C, and a good cycle performance. Moreover, the sodium‐ion full cell of NVP/rGO//Sb/rGO has been fabricated, delivering a highly reversible capacity of ≈400 mAh g^?1 at a current density of 100 mA g^?1 after 100 charge/discharge cycles. This work may provide promising electrode candidates for developing next‐generation energy‐storage devices with high capacity and long cycle life.     

Air‐Stable and High‐Performance Solution‐Processed Organic Light‐Emitting Devices Based on Hydrophobic Polymeric Ionic Liquid Carrier‐Injection Layers

A lot of research, mostly using electron‐injection layers (EILs) composed of alkali‐metal compounds has been reported with a view to increase the efficiency of solution‐processed organic light‐emitting devices (OLEDs). However, these materials have intractable properties, such as a strong affinity for moisture, which cause the degradation of OLEDs. Consequently, optimal EIL materials should exhibit high electron‐injection efficiency as well as be stable in air. In this study, polymer light‐emitting devices (PLEDs) based on the commonly used yellow‐fluorescence‐emitting polymer F8BT, which utilize poly(diallyldimethylammonium)‐based polymeric ionic liquids, are experimentally and analytically investigated. As a result, the optimized PLED employing an EIL comprising poly(diallyldimethylammonium) bis(trifluoromethanesulfonyl)imide (poly(DDA)TFSI), which is expected to display good moisture resistance because of water repellency of fluorocarbon groups, exhibits excellent storage stability in air and electroluminescence performance with a low turn‐on voltage of 2.01 V, maximum external quantum efficiency of 9.00%, current efficiency of 30.1 cd A^?1, and power efficiency of 32.4 lm W^?1. The devices with poly(DDA)TFSI show one of the highest efficiencies as compared to the reported standard PLEDs. Moreover, poly(DDA)TFSI is applied as a hole‐injection layer (HIL). The optimized PLED using poly(DDA)TFSI as the HIL exhibits performances comparable to those of a device that uses a conventional poly(3,4‐ethylenedioxy‐thiophene):poly(4‐styrenesulfonate) HIL.     

Ultrahigh‐Efficiency Green PHOLEDs with a Voltage under 3 V and a Power Efficiency of Nearly 110 lm W−1 at Luminance of 10 000 cd m−2

Maintaining high power efficiency (PE) under high brightness is still a pressing problem for the practical application of organic light‐emitting diodes (OLEDs). Here, ultrahigh‐efficiency green phosphorescent OLEDs (PHOLEDs) with a record‐low voltage at luminance above 5000 cd m^?2 are fabricated, by developing a novel anthracene/pyridine derivative as the electron‐transporting material (ETM) combined with a material displaying thermally activated delayed fluorescence as the host. The pyridine units of the ETM not only facilitate charge injection, but also enhance the electron‐transporting mobility, profiting from the closely packed molecules caused by the intermolecular H‐bonding. The optimized green PHOLEDs show record‐low driving voltages of 2.76 and 2.92 V, with EQEs/PEs of 28.0%/102 lm W^?1 and 27.9%/97 lm W^?1 at 5000 and 10 000 cd m^?2, respectively. Furthermore, device optimization exhibits an unprecedented high PE of 109 lm W^?1 at 10 000 cd m^?2 with voltage under 3 V. Those values are the state‐of‐the‐art among all reported green OLEDs so far, paving their way toward practical applications.     

Interlayered Dendrite‐Free Lithium Plating for High‐Performance Lithium‐Metal Batteries

For its high theoretical capacity and low redox potential, Li metal is considered to be one of the most promising anode materials for next‐generation batteries. However, practical application of a Li‐metal anode is impeded by Li dendrites, which are generated during the cycling of Li plating/stripping, leading to safety issues. Researchers attempt to solve this problem by spatially confining the Li plating. Yet, the effective directing of Li deposition into the confined space is challenging. Here, an interlayer is constructed between a graphitic carbon nitrite layer (g‐C₃N₄) and carbon cloth (CC), enabling site‐directed dendrite‐free Li plating. The g‐C₃N₄/CC as an anode scaffold enables extraordinary cycling stability for over 1500 h with a small overpotential of ≈80 mV at 2 mA cm^?2. Furthermore, prominent battery performance is also demonstrated in a full cell (Li/g‐C₃N₄/CC as anode and LiCoO₂ as cathode) with high Coulombic efficiency of 99.4% over 300 cycles.