Deformable Organic Nanowire Field‐Effect Transistors

Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next‐generation implantable bioelectronic devices. Here, deformable field‐effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high‐molecular‐weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field‐effect mobility >8 cm² V^?1 s^?1 with poly(vinylidenefluoride‐ co ‐trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine‐like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min^?1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications.     

Towards the Development of Flexible Non‐Volatile Memories

Flexible non‐volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field‐effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non‐volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non‐volatile memories.     

Development of ultra-high density silicon nanowire arrays for electronics applications

This article reviews our recent progress on ultra-high density nanowires (NWs) array-based electronics. The superlattice nanowire pattern transfer (SNAP) method is utilized to produce aligned, ultra-high density Si NW arrays. We fi rst cover processing and materials issues related to achieving bulk-like conductivity characteristics from 10 20 nm wide Si NWs. We then discuss Si NW-based fi eld-effect transistors (FETs). These NWs & NW FETs provide terrifi c building blocks for various electronic circuits with applications to memory, energy conversion, fundamental physics, logic, and others. We focus our discussion on complementary symmetry NW logic circuitry, since that provides the most demanding metrics for guiding nanofabrication. Issues such as controlling the density and spatial distribution of both p-and n-type dopants within NW arrays are discussed, as are general methods for achieving Ohmic contacts to both p-and n-type NWs. These various materials and nanofabrication advances are brought together to demonstrate energy effi cient, complementary symmetry NW logic circuits.     

Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

2D van der Waals (vdWs) heterostructures exhibit intriguing optoelectronic properties in photodetectors, solar cells, and light‐emitting diodes. In addition, these materials have the potential to be further extended to optical memories with promising broadband applications for image sensing, logic gates, and synaptic devices for neuromorphic computing. In particular, high programming voltage, high off‐power consumption, and circuital complexity in integration are primary concerns in the development of three‐terminal optical memory devices. This study describes a multilevel nonvolatile optical memory device with a two‐terminal floating‐gate field‐effect transistor with a MoS₂/hexagonal boron nitride/graphene heterostructure. The device exhibits an extremely low off‐current of ≈10^?14 A and high optical switching on/off current ratio of over ≈10⁶, allowing 18 distinct current levels corresponding to more than four‐bit information storage. Furthermore, it demonstrates an extended endurance of over ≈10⁴ program–erase cycles and a long retention time exceeding 3.6 × 10⁴ s with a low programming voltage of ?10 V. This device paves the way for miniaturization and high‐density integration of future optical memories with vdWs heterostructures.     

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec^‐1 at room temperature, leading to high energy consumption of MOSFETs. Herein, it is demonstrated that an aggressive introduction of the negative capacitance (NC) effect of ferroelectrics can decisively break the fundamental limit governed by the “Boltzmann tyranny”. Such MoS₂ negative‐capacitance field‐effect transistors (NC‐FETs) with self‐aligned top‐gated geometry demonstrated here pull down the SS value to 42.5 mV dec^‐1, and simultaneously achieve superior performance of a transconductance of 45.5 μS μm and an on/off ratio of 4 × 10⁶ with channel length less than 100 nm. Furthermore, the inserted HfO₂ layer not only realizes a stable NC gate stack structure, but also prevents the ferroelectric P(VDF‐TrFE) from fatigue with robust stability. Notably, the fabricated MoS₂ NC‐FETs are distinctly different from traditional MOSFETs. The on‐state current increases as the temperature decreases even down to 20 K, and the SS values exhibit nonlinear dependence with temperature due to the implementation of the ferroelectric gate stack. The NC‐FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low‐power transistors needed for many exciting long‐endurance portable consumer products.     

Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics

We report a general approach for three-dimensional (3D) multifunctional electronics based on the layer-by-layer assembly of nanowire (NW) building blocks. Using germanium/silicon (Ge/Si) core/shell NWs as a representative example, ten vertically stacked layers of multi-NW field-effect transistors (FETs) were fabricated. Transport measurements demonstrate that the Ge/Si NW FETs have reproducible high-performance device characteristics within a given device layer, that the FET characteristics are not affected by sequential stacking, and importantly, that uniform performance is achieved in sequential layers 1 through 10 of the 3D structure. Five-layer single-NW FET structures were also prepared by printing Ge/Si NWs from lower density growth substrates, and transport measurements showed similar high-performance characteristics for the FETs in layers 1 and 5. In addition, 3D multifunctional circuitry was demonstrated on plastic substrates with sequential layers of inverter logical gates and floating gate memory elements. Notably, electrical characterization studies show stable writing and erasing of the NW floating gate memory elements and demonstrate signal inversion with larger than unity gain for frequencies up to at least 50 MHz. The ability to assemble reproducibly sequential layers of distinct types of NW-based devices coupled with the breadth of NW building blocks should enable the assembly of increasing complex multilayer and multifunctional 3D electronics in the future.     

A High‐Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3‐d;2′,3′‐d′]naphtho[2,3‐b;6,7‐b′]dithiophene (BBTNDT) organic field‐effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm² V^?1 s^?1, photoresponsivity of 433 A W^?1, and long retention time for more than 6 h with a current ratio larger than 10⁶. Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2‐b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high‐performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer.     

InAs Nanowire Devices with Strong Gate Tunability:Fundamental Electron Transport Properties and Application Prospects:A Review

The high electron mobility has granted indium arsenide(InAs) nanowires(NWs) as an important class of nanomaterials for high performance electronics such as field-effect transistors(FETs).We reviewed recent progresses on the studies of quantum coherence,gate tunable one-dimensional(1D) confinement and spin orbit interaction(SOI) in InAs NW based electronic and thermoelectric transport devices.We also demonstrated gas sensing response of InAs NW FETs and elucidated the mechanism via a gating experiment.By using InAs NWs as an example,these fundamental transport studies have shed important lights on the potential thermoelectric,spintronic and gas sensing applications of semiconductor NWs where the 1D confinement,SOI or surface states effects are exploited.     

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound (p‐NO₂‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p‐NO₂‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10⁶‐fold at V_G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p‐NO₂‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p‐NO₂‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.     

Modulating the Charge Transport in 2D Semiconductors via Energy‐Level Phototuning

The controlled functionalization of semiconducting 2D materials (2DMs) with photoresponsive molecules enables the generation of novel hybrid structures as active components for the fabrication of high‐performance multifunctional field‐effect transistors (FETs) and memories. This study reports the realization of optically switchable FETs by decorating the surface of the semiconducting 2DMs such as WSe₂ and black phosphorus with suitably designed diarylethene (DAE) molecules to modulate their electron and hole transport, respectively, without sacrificing their pristine electrical performance. The efficient and reversible photochemical isomerization of the DAEs between the open and the closed isomer, featuring different energy levels, makes it possible to generate photoswitchable charge trapping levels, resulting in the tuning of charge transport through the 2DMs by alternating illumination with UV and visible light. The device reveals excellent data‐retention capacity combined with multiple and well‐distinguished accessible current levels, paving the way for its use as an active element in multilevel memories.     

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Optoelectronic devices based on metal halide perovskites, including solar cells and light‐emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic–inorganic hybrid perovskite materials can enable high‐performance, solution‐processed field‐effect transistors (FETs) for next‐generation, low‐cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single‐crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source–drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such “ideal” interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom‐contact, bottom‐gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single‐crystal FETs with high mobility of up to ≈15 cm² V^?1 s^?1 at 80 K. This work addresses one of the key challenges toward the realization of high‐performance solution‐processed perovskite FETs.     

Diameter‐ and Metallicity‐Selective Enrichment of Single‐Walled Carbon Nanotubes Using Polymethacrylates with Pendant Aromatic Functional Groups

Current methods for the synthesis of single‐walled nanotubes (SWNTs) produce mixtures of semiconducting (sem‐) and metallic (met‐) nanotubes. Most approaches to the chemical separation of sem‐/met‐SWNTs are based on small neutral molecules or conjugated aromatic polymers, which characteristically have low separation/dispersion efficiencies or present difficulties in the postseparation removal of the polymer so that the resulting field‐effect transistors (FETs) have poor performance. In this Full Paper, the use of three polymethacrylates with different pendant aromatic functional groups to separate cobalt–molybdenum catalyst (CoMoCAT) SWNTs according to their metallicity and diameters is reported. UV/Vis/NIR spectroscopy indicates that poly(methyl‐methacrylate‐co‐fluorescein‐o‐acrylate) (PMMAFA) and poly(9‐anthracenylmethyl‐methacrylate) (PAMMA) preferentially disperse semiconducting SWNTs while poly(2‐naphthylmethacrylate) (PNMA) preferentially disperses metallic SWNTs, all in dimethylforamide (DMF). Photoluminescence excitation (PLE) spectroscopy indicates that all three polymers preferentially disperse smaller‐diameter SWNTs, particularly those of (6,5) chirality, in DMF. When chloroform is used instead of DMF, the larger‐diameter SWNTs (8,4) and (7,6) are instead selected by PNMA. The solvent effects suggest that diameter selectivity and change of polymer conformation is probably responsible. Change of the polymer fluorescence upon interaction with SWNTs indicates that metallicity selectivity presumably results from the photon‐induced dipole–dipole interaction between polymeric chromophore and SWNTs. Thin‐film FET devices using semiconductor‐enriched solution with PMMAFA have been successfully fabricated and the device performance confirms the sem‐SWNTs enrichment with a highly reproducible on/off ratio of about 10³.     

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α‐In₂Se₃, a semiconducting van der Waals ferroelectric material. The planar memristor based on in‐plane (IP) polarization of α‐In₂Se₃ exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. The integration of vertical α‐In₂Se₃ memristors based on out‐of‐plane (OOP) polarization is demonstrated with a device density of 7.1 × 10⁹ in.^?2 and a resistance‐switching ratio of well over 10³. A multidirectionally operated α‐In₂Se₃ memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α‐In₂Se₃ memristors suggest opportunities for future logic circuits and complex neuromorphic computing.     

Direct gravure printing of silicon nanowires using entropic attraction forces

The development of a method for large-scale printing of nanowire (NW) arrays onto a desired substrate is crucial for fabricating high-performance NW-based electronics. Here, the alignment of highly ordered and dense silicon (Si) NW arrays at anisotropically etched micro-engraved structures is demonstrated using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures, and the assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays are subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As a proof-of-concept, flexible back-gated NW field-effect transistors (FETs) are fabricated. The fabricated FETs have an effective hole mobility of 17.1 cm(2) ·V(-1) ·s(-1) and an on/off ratio of ~2.6 × 10(5) .     

Flexible Nonvolatile Transistor Memory with Solution‐Processed Transition Metal Dichalcogenides

Nonvolatile field‐effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating‐gate organic‐FET memory with an all‐in‐one floating‐gate/tunneling layer of the solution‐processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS₂) is efficiently liquid‐exfoliated by amine‐terminated polystyrene with a controlled amount of MoS₂ nanosheets in an all‐in‐one floating‐gate/tunneling layer, allowing for systematic investigation of concentration‐dependent charge‐trapping and detrapping properties of MoS₂ nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 10⁴, a program/erase endurance cycle over 400 times, and data retention longer than 7 × 10³ s. All‐in‐one floating‐gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically‐flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer‐bending events over 500 times at the bending radius of 4.0 mm.     

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier traps and nonradiative recombination centers. Here, self‐catalyzed p‐type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room‐temperature high photoresponsivity of 1.45 × 10⁵ A W^?1 and excellent specific detectivity (D*) up to 1.48 × 10¹⁴ Jones for a low‐intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW‐based photodetectors. These results demonstrate these self‐catalyzed pure‐ZB GaAs NWs to be promising candidates for optoelectronics applications.     

A Facile One‐Step Approach for Constructing Multidimensional Ordered Nanowire Micropatterns via Fibrous Elastocapillary Coalescence

Nanowire (NW) based micropatterns have attracted research interests for their applications in electric microdevices. Particularly, aligning NWs represents an important process due to the as‐generated integrated physicochemical advantages. Here, a facile and general strategy is developed to align NWs using fibrous elastocapillary coalescence of carbon nanotube arrays (ACNTs), which enables constructing multidimensional ordered NW micropatterns in one step without any external energy input. It is proposed that the liquid film of NW solution is capable of shrinking unidirectionally on the top of ACNTs, driven by the dewetting‐induced elastocapillary coalescence of the ACNTs. Consequently, the randomly distributed NWs individually rotate and move into dense alignment. Meanwhile, the aggregating and bundling of ACNTs is helpful to produce carbon nanotube (CNT) yarns connecting neighboring bundles. Thus, a micropatterned NW network composed of a top‐layer of horizontally aligned NWs and an under‐layer of vertical ACNT bundles connected by CNT yarns is prepared, showing excellent performance in sensing external pressure with a sensitivity of 0.32 kPa^?1. Moreover, the aligned NWs can be transferred onto various substrates for constructing electronic circuits. The strategy is applicable for aligning various NWs of Ag, ZnO, Al₂O₃, and even living microbes. The result may offer new inspiration for fabricating NW‐based functional micropatterns.     

Nonvolatile Perovskite‐Based Photomemory with a Multilevel Memory Behavior

Solution‐processable organic–inorganic hybrid perovskite materials with a wealth of exotic semiconducting properties have appeared as the promising front‐runners for next‐generation electronic devices. Further, regarding its well photoresponsibility, various perovskite‐based photosensing devices are prosperously developed in recent years. However, most exploited devices to date only transiently transduce the optical signals into electrical circuits while under illumination, which necessitates using additional converters to further store the output signals for recording the occurrence of light stimulation. Herein, a nonvolatile perovskite‐based floating‐gate photomemory with a multilevel memory behavior is demonstrated, for which a floating gate comprising a polymer matrix impregnated with perovskite nanoparticles is employed. Owing to the well photoresponsibility introduced by the embedded nanoparticles, the device is enabled to access multiple wavelength response and the functionalities of recording power/time‐dependent illumination under no vertical electrical field. Intriguingly, a nonvolatility of photorecording exceeding three months with a high On/Off current ratio over 10⁴ can be achieved.     

Growth direction modulation and diameter-dependent mobility in InN nanowires

Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapor deposition have been investigated. The NWs exhibited interesting properties of coplanar deflection at specific angles, either spontaneously, or when induced by other NWs or lithographically patterned barriers. InN NW-based back-gated field effect transistors (FETs) showed excellent gate control and drain current saturation behaviors. Both NW conductance and carrier mobility calculated from the FET characteristics were found to increase regularly with a decrease in NW diameter. The observed mobility and conductivity variations have been modeled by considering NW surface and core conduction paths.     

Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb₂Se₃ nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb₂Se₃ NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb₂Se₃ NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb₂Se₃ NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb₂Se₃ NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W^?1, and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb₂Se₃ NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb₂Se₃ NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.