Metal Nanowire Networks: The Next Generation of Transparent Conductors

There is an ongoing drive to replace the most common transparent conductor, indium tin oxide (ITO), with a material that gives comparable performance, but can be coated from solution at speeds orders of magnitude faster than the sputtering processes used to deposit ITO. Metal nanowires are currently the only alternative to ITO that meets these requirements. This Progress Report summarizes recent advances toward understanding the relationship between the structure of metal nanowires, the electrical and optical properties of metal nanowires, and the properties of a network of metal nanowires. Using the structure–property relationship of metal nanowire networks as a roadmap, this Progress Report describes different synthetic strategies to produce metal nanowires with the desired properties. Practical aspects of processing metal nanowires into high‐performance transparent conducting films are discussed, as well as the use of nanowire films in a variety of applications.     

Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

2D β‐Ga₂O₃ nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga₂O₃ nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline $(\stackrel{?}{2}01)$β‐Ga₂O₃ nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga₂O₃ nanosheets. The undoped 2D (010) β‐Ga₂O₃ nanosheet field effect transistor has a field‐effect electron mobility of 38 cm² V^?1 s^?1 and an on/off current ratio of 10⁷ with an average subthreshold swing of 150 mV dec^?1. The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.     

The Electrochemical Response of Single Crystalline Copper Nanowires to Atmospheric Air and Aqueous Solution

In this paper, single crystalline copper nanowires (CuNWs) have been electrochemically grown through anodic aluminum oxide template. The environmental stability of the as‐obtained CuNWs in both 40% relative humidity (RH) atmosphere and 0.1 m NaOH aqueous solution has been subsequently studied. In 40% RH atmosphere, a uniform compact Cu₂O layer is formed as a function of exposure time following the logarithmic law and epitaxially covers the CuNW surfaces. It is also found that the oxide layers on CuNWs are sequentially grown when subjected to the cyclic voltammetry measurement in 0.1 m NaOH solution. An epitaxially homogeneous Cu₂O layer is initially formed over the surface of the CuNW substrates by solid‐state reaction (SSR). Subsequently, the conversion of Cu₂O into epitaxial CuO based on the SSR takes place with the increase of applied potential. This CuO layer is partially dissolved in the solution forming Cu(OH)₂, which then redeposited on the CuNW surfaces (i.e., dissolution‐redeposition (DR) process) giving rise to a mixed polycrystalline CuO/Cu(OH)₂ layer. The further increase of applied potential allows the complete oxidation of Cu₂O into CuO to form a dual‐layer structure (i.e., CuO inner layer and Cu(OH)₂ outer layer) with random orientations through an enhanced DR process.     

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution‐Processed Thin Films

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom‐up formation and top‐down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top‐down, or grown from catalyst nanoparticles bottom‐up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution‐processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid‐state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO₃ nanowire networks on smooth Si/SiO₂ and granular fluorine‐doped tin oxide surfaces can be formed by low‐temperature annealing of a Na diffusion species‐containing donor glass to a solution‐processed V₂O₅ thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures.     

Caging Nb2O5 Nanowires in PECVD‐Derived Graphene Capsules toward Bendable Sodium‐Ion Hybrid Supercapacitors

Sodium‐ion hybrid supercapacitors (Na‐HSCs) by virtue of synergizing the merits of batteries and supercapacitors have attracted considerable attention for high‐energy and high‐power energy‐storage applications. Orthorhombic Nb₂O₅ (T‐Nb₂O₅) has recently been recognized as a promising anode material for Na‐HSCs due to its typical pseudocapacitive feature, but it suffers from intrinsically low electrical conductivity. Reasonably high electrochemical performance of T‐Nb₂O₅‐based electrodes could merely be gained to date when sufficient carbon content was introduced. In addition, flexible Na‐HSC devices have scarcely been demonstrated by far. Herein, an in situ encapsulation strategy is devised to directly grow ultrathin graphene shells over T‐Nb₂O₅ nanowires (denoted as Gr‐Nb₂O₅ composites) by plasma‐enhanced chemical vapor deposition, targeting a highly conductive anode material for Na‐HSCs. The few‐layered graphene capsules with ample topological defects would enable facile electron and Na⁺ ion transport, guaranteeing rapid pseudocapacitive processes at the Nb₂O₅/electrolyte interface. The Na‐HSC full‐cell comprising a Gr‐Nb₂O₅ anode and an activated carbon cathode delivers high energy/power densities (112.9 Wh kg^?1/80.1 W kg^?1 and 62.2 Wh kg^?1/5330 W kg^?1), outperforming those of recently reported Na‐HSC counterparts. Proof‐of‐concept Na‐HSC devices with favorable mechanical robustness manifest stable electrochemical performances under different bending conditions and after various bending–release cycles.     

Simultaneous Synthesis of WO3−x Quantum Dots and Bundle‐Like Nanowires Using a One‐Pot Template‐Free Solvothermal Strategy and Their Versatile Applications

Tungsten oxide (WO_3?x ), a new alternative to conventional semiconductor material, has attracted numerous attentions owning to its widespread potential applications. Various methods have been reported for the synthesis of WO_3?x nanostructures such as nanowires or nanodots. However, templates or surfactants are often required for the synthesis, which significantly complicate the process and hinder the broad applications. Herein, one‐pot template/surfactant‐free solvothermal method is proposed to synthesize the WO_3?x nanostructures including fluorescent quantum dots (QDs) and bundle‐like nanowires simultaneously. The as‐prepared WO_3?x QDs can be well dispersed in aqueous medium, exhibit excellent photoluminescent properties, and show an average size of 3.25 ± 0.25 nm as evidenced by transmission electron microscopy. Meanwhile, the diameter of the WO_3?x nanowires is found to be about 27.5 nm as manifested by the scanning electron microscope images. The generation mechanism for these two WO_3?x nanostructures are systematically studied and proposed. The WO_3?x QDs have been successfully applied in efficient fluorescent staining and specific ferric ion detection. Moreover, the WO_3?x nanowires can be utilized as effective dielectric materials for electromagnetic wave absorption.     

One‐Step Solution Phase Growth of Transition Metal Dichalcogenide Thin Films Directly on Solid Substrates

Ultrathin transition metal dichalcogenides (TMDs) have exotic electronic properties. With success in easy synthesis of high quality TMD thin films, the potential applications will become more viable in electronics, optics, energy storage, and catalysis. Synthesis of TMD thin films has been mostly performed in vacuum or by thermolysis. So far, there is no solution phase synthesis to produce large‐area thin films directly on target substrates. Here, this paper reports a one‐step quick synthesis (within 45–90 s) of TMD thin films (MoS₂, WS₂, MoSe₂, WSe₂, etc.) on solid substrates by using microwave irradiation on a precursor‐containing electrolyte solution. The numbers of the quintuple layers of the TMD thin films are precisely controllable by varying the precursor's concentration in the electrolyte solution. A photodetector made of MoS₂ thin film comprising of small size grains shows near‐IR absorption, supported by the first principle calculation, exhibits a high photoresponsivity (>300 mA W^?1) and a fast response (124 µs). This study paves a robust way for the synthesis of various TMD thin films in solution phases.     

One‐Pot Synthesis of Multiple Protein‐Encapsulated DNA Flowers and Their Application in Intracellular Protein Delivery

Inspired by biological systems, many biomimetic methods suggest fabrication of functional materials with unique physicochemical properties. Such methods frequently generate organic–inorganic composites that feature highly ordered hierarchical structures with intriguing properties, distinct from their individual components. A striking example is that of DNA–inorganic hybrid micro/nanostructures, fabricated by the rolling circle technique. Here, a novel concept for the encapsulation of bioactive proteins in DNA flowers (DNF) while maintaining the activity of protein payloads is reported. A wide range of proteins, including enzymes, can be simultaneously associated with the growing DNA strands and Mg₂PPi crystals during the rolling circle process, ultimately leading to the direct immobilization of proteins into DNF. The unique porous structure of this construct, along with the abundance of Mg ions and DNA molecules present, provides many interaction sites for proteins, enabling high loading efficiency and enhanced stability. Further, as a proof of concept, it is demonstrated that the DNF can deliver payloads of cytotoxic protein (i.e., RNase A) to the cells without a loss in its biological function and structural integrity, resulting in highly increased cell death compared to the free protein.