石墨烯复合导电剂SP/CNTs/G对LiNi_(0.5)Co_(0.2)Mn_(0.3)O_2锂离子电池性能影响

用气相沉积法(CVD)和转移法制备了石墨烯,用超声分散及搅拌的方法分别制备了导电碳黑(SP)导电浆料,导电碳黑(SP)、碳纳米管(CNTs)复合导电浆料(SP/CNTs)及导电碳黑(SP)、碳纳米管(CNTs)和石墨烯(G)复合导电浆料(SP/CNTs/G),通过扫描电镜(SEM)、四探针测试、恒流充放电测试、循环伏安测试(CV)和电化学阻抗谱测试(EIS)等方法研究了导电剂对锂离子电池正极材料LiNi_(0.5)Co_(0.2)Mn_(0.3)O_2的表面形貌、电阻率和电化学性能的影响。结果表明:添加质量分数2%复合导电剂SP/CNTs/G的样品电阻率较小,0.2 C首次充放电比容量分别为201.93 m Ah·g~(–1)和180.29 m Ah·g~(–1),首次充放电效率为89.28%。3.0C循环5次后的放电比容量为161.45 m Ah·g~(–1),容量保持率仍有89.69%,1.0C循环50次后放电比容量为166.97 m Ah·g~(–1),容量保持率为96.65%,倍率和循环性能优良。     

原料配比对聚苯胺/氧化石墨烯复合材料储能的影响

以苯胺(ANi)为单体,过硫酸铵(APS)为氧化剂,氧化石墨烯(GO)为模板,调节ANi与GO原料质量比从0.5到100,采用原位聚合法制备了一系列不同组分含量的聚苯胺/氧化石墨烯(PANi/GO)复合材料。采用傅里叶变换红外光谱、X射线衍射谱、扫描电镜和循环伏安法对制备复合材料的结构、微观形貌和循环伏安性能进行了研究,着重考察了原料配比对PANi/GO复合材料结构、微观形貌及能量存储的影响。研究表明:ANi单体成功原位聚合在GO表面上;ANi/GO质量比对PANi/GO复合材料的比电容影响明显;随着ANi/GO质量比的增加,所制备复合材料的比电容先增加后减小。当ANi/GO质量比为10、扫描速率为10 m V·s~(–1)时,复合材料的比电容达到最大值162.2 F·g~(–1)。     

高比表面三维多孔石墨烯的制备及其电容性能研究

以氧化石墨烯为原料,通过水热处理得到石墨烯水凝胶,浸渍KOH溶液后进一步高温活化制备了高比表面积的三维多孔石墨烯,系统地研究了KOH活化剂用量对石墨烯多孔结构和电容性能的影响规律。研究结果表明,随KOH用量增加,三维多孔石墨烯的比表面积增加,多孔结构更加发达,比容量增大。所制备的三维多孔石墨烯的比表面积最高可达2133 m~2·g~(-1),在1 mol·L~(-1) Et_4NBF_4/AN的有机电解液中于0.2 A·g~(-1)电流密度下的比容量高达108 F·g~(-1),循环和倍率性能优异。优异的电化学性能,结合简单的制备工艺,使得这种方法制备的三维多孔石墨烯成为极具应用前景的超级电容器电极材料。     

锂离子电池锡基负极材料研究进展

目前,商业上普遍使用石墨作为锂离子电池负极材料,由于其理论比容量较低(372 m Ah·g~(–1)),已经不能够满足锂离子电池的发展需求。研究发现,SnO_2作为负极材料可以和锂离子发生良好的可逆反应,且其可逆容量远高于石墨负极。但SnO_2在充放电过程中会出现颗粒粉化导致电极体积膨胀、裂解,从而影响锂电池的循环性能。通过加入石墨烯对SnO_2进行改性,不仅可以缓解SnO_2在运行过程中的体积膨胀,此外,石墨烯本身大的比表面积及良好的导电性,使得石墨烯/SnO_2材料具有较高的可逆容量及较好的循环稳定性。本文综述了几种不同方法制备石墨烯/SnO_2复合材料,在应用到锂离子电池负极材料时,均表现出良好的电化学性能。     

纳米硅/还原氧化石墨烯复合纤维材料及其负极结构锂离子超级电容器

通过湿法纺丝工艺成功制备了纳米硅/还原氧化石墨烯复合纤维材料,并对其进行形貌表征与电化学性能测试。纳米硅颗粒嵌入石墨烯层间褶皱的结构具有限制硅材料在储锂过程中体积膨胀的作用,适于作为锂离子电容器负极。同时,研究了锂离子电容器多孔活性炭正极材料的双电层电容特性,通过组装成对称超级电容器,对其电化学性能进行测试,并结合材料的形貌,分析其作为锂离子电容器正极的合理性。为使正负极电荷匹配,分别对负极硅碳纤维和正极活性炭材料组装的锂离子半电池的倍率、循环稳定性、电化学阻抗等电化学性能进行了测试。结果表明,纳米硅/还原氧化石墨烯复合纤维材料的比容量最高可达826.2 mA·h/g(在电流密度为0.2 A/g时),活性炭比容量可达39.9 mA·h/g。组装成的锂离子电容器在合理的匹配条件下,充放电首圈循环比容量可达58.2 mA·h/g (在电流密度为0.2 A/g时),能量密度为26.8 W·h/kg,循环100圈后,比容量保持率降至41.7%。     

石墨烯纤维无纺布电极及其超级电容器的性能

采用湿法纺丝的方法制备了石墨烯纤维无纺布电极,并将该电极应用于超级电容器。电化学测试结果表明,160μm厚的石墨烯纤维无纺布电极质量比容量高达164 F·g~(-1)(电流密度为0.1 A·g~(-1)时),面积比容量为910 mF·cm~(-2)(电流密度为1 mA·cm~(-2)时),当将两片相同大小的160μm厚的石墨烯纤维无纺布叠加作为一个电极进行测试时,面积比容量高达1 800 mF·cm~(-2)。电流密度从1 mA·cm~(-2)升高到20 mA·cm~(-2)时,面积比容量保持率为62%(560 mF·cm~(-2)),表明石墨烯纤维无纺布电极具有很好的倍率性能。在10 A·g~(-1)的电流密度下循环10 000次后,容量保持率为79.5%,表明石墨烯纤维无纺布电极具有良好的循环稳定性。因此,石墨烯纤维无纺布电极以其新颖的制备技术,在柔性电子器件中具有良好的应用前景。     

3DG/CoSe2@NW锂离子电池负极材料的制备和电化学性能

为开发高效储存性能的锂离子电池(LIB),利用简单的溶剂热反应合成一维Co-硝基三乙酸(NTC)前驱体,与三维石墨烯(3DG)组装并高温退火后,制备了多维度、多孔的3DG/CoSe₂@纳米线(NW)负极材料。通过一系列的表征证明在纳米结构中,CoSe₂纳米粒子嵌入一维多孔碳NW中,该一维多孔碳NW被封装在3DG中。3DG/CoSe₂@NW用作LIB负极材料时,由于其独特的纳米结构,在0.1 A·g^-1电流密度下100次循环后比容量为725.6 mA·h·g^-1,在2 A·g^-1的大电流密度下进行500次的循环后,容量保持率为92.5%。电化学测试结果表明,以3DG/CoSe₂@NW为电极的LIB具有高比容量和优异的循环稳定性。     

GO/PANI改性环氧树脂@TiO2/CdS涂层的光生阴极保护性能

为解决二氧化钛/硫化镉(TiO₂/CdS)复合材料作为光生阴极防腐保护材料无法对金属提供持久性光生阴极保护、导电率低和载流子复合率高等问题,引入氧化石墨烯(GO)和聚苯胺(PANI)材料,通过水热法和原位聚合法制备了TiO₂/CdS/GO/PANI复合材料,将其作为改性环氧树脂涂层,制备出兼具优异光电转换性能和防腐性能的双功能环氧树脂基涂层。通过对Q235碳钢(Q235 CS)表面进行涂覆,研究了复合涂层的光生阴极保护电化学性能和防腐性能参数。结果表明,TiO₂/CdS/GO/PANI修饰后的环氧树脂基涂层表现出优异的光电化学性能和防腐性能,光电流密度达到0.15 A/cm²,开路电位为-0.8 V,防腐蚀效率高达98.55%。     

石墨烯/聚苯胺纳米复合材料的制备及防腐应用研究进展

导电聚苯胺(PANI)具有易合成、易掺杂等特点,石墨烯(GR)及石墨烯衍生材料具有较高的比表面积、良好的导电性、优异的防液体渗漏等物理和化学性质。两者的复合材料表现出优异的机械、电化学、防腐蚀等性能,引起了广泛的关注。介绍了石墨烯/聚苯胺纳米复合材料的制备方法、影响石墨烯/聚苯胺性能的主要因素以及石墨烯/聚苯胺纳米复合材料在防腐中的应用。系统总结了石墨烯/聚苯胺的防腐机理以及在不同基体涂料中的防腐改性,石墨烯的存在增加了腐蚀介质(如H2O和O2)渗透路径的曲折程度,减缓了金属腐蚀速度,从而提高涂料防腐效率。石墨烯/聚苯胺复合材料在防腐方面具有广阔的应用前景,对石墨烯/聚苯胺的复合状态、防腐机理、环境适应性的深入研究是未来该材料的发展方向。     

脉冲电沉积法制备PANI/CNTs复合材料及其超电容性能

采用脉冲电沉积法,于苯胺、浓硫酸和碳纳米管(CNTs)的混合溶液中,制备得到PANI(聚苯胺)/CNTs复合物,并对所制PANI/CNTs复合材料的微观形貌、结构以及电化学性能进行了研究。结果表明,CNTs的加入增大了PANI/CNTs复合物的比表面积,提高了其导电性。PANI/CNTs复合物用作超级电容器电极材料时,其比容量可达420.7 F/g,经500次循环后衰减幅度为8.9%,表现出优良的电化学性能。     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.