基于倒扣技术的190～225GHz肖特基二极管高效率二倍频器（英文）

基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平.     

（英）基于肖特基平面二极管的150 GHz和180 GHz固定调节式倍频源

利用GaAs肖特基平面二极管,基于石英薄膜电路工艺,采用场和路相结合的综合分析方法,研制出了两个不同频率带宽的倍频器.在场软件中,二极管非线性结采用集总端口模拟,以提取二极管的嵌入阻抗,设计二倍频器的无源匹配电路,优化倍频的整体电路性能,提取相应的S参数文件,分析倍频器的效率.150 GHz二倍频器在149.2 GHz测得最高倍频效率7.5％,在147.4～152 GHz效率典型值为6.0％;180 GHz二倍频器在170 GHz测得最高倍频效率14.8％,在150 ～ 200 GHz效率典型值为8.0％.     

0.2 THz二倍频器研究

基于六阳极结反向串联型GaAs平面肖特基二极管,设计并实现了0.2 THz大功率二倍频器。肖特基二极管倒装焊接在50m石英电路上。采用电磁场和电路联合设计仿真获得了二倍频器的倍频效率。当入射功率在100 mW时,输出频率在190~225 GHz带内效率大于5%。在小功率（Pin100 mW）和大功率（Pin300 mW）注入条件下,测试了倍频电路的输出功率和倍频效率。在100 mW驱动功率下采用自偏压测试,最大输出功率为14.5 mW@193 GHz,对应倍频效率为14%;在300 mW驱动功率下采用自偏压测试,在188~195 GHz,输出功率大于10 mW,最大输出功率为35 mW@192.8 GHz,对应倍频效率为11%。     

基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源

基于南京电子器件研究所(NEDI)的GaAs工艺线,通过分析器件的有源层(缓冲层、外延层)材料掺杂浓度和厚度、肖特基接触面积等,综合优化二极管性能,研制出了截止频率为3.2 THz的太赫兹变阻二极管.基于该二极管,通过建立其三维场结构,采用电磁场和电路仿真软件相结合的方法,一体化设计匹配电路和器件,研制出了D波段和G波段倍频源.D波段二倍频器在152.6 GHz测得最高倍频效率为2.7%,在147.4~155 GHz效率典型值为1.3%.G波段二倍频器在172 GHz测得最高倍频效率为2.1%,在150~200 GHz效率典型值为1.0%.     

190 GHz大功率输出平衡式二倍频器

基于反向串联型砷化镓平面肖特基容性二极管,采用平衡式二倍频结构,研制出了一种190 GHz大功率输出二倍频器。使用三维电磁场与非线性谐波平衡联合的方法进行了仿真,并根据仿真结果完成了倍频器的加工、装配和测试。倍频器在182～196 GHz输出频率范围内的倍频效率可达8%以上;当输出频率为187 GHz时,倍频效率和输出功率可分别达到15.4%和85 mW。     

D频段新型二倍频器设计

利用阻性二极管实现了一种D频段二倍频器,设计了一种新型双鳍线输入过渡结构,并成功应用于该二倍频器,该结构能更好地实现输入波导与二极管的匹配.该二倍频器采用肖特基势垒二极管MA4E2038,电路制作在0.05 mm厚石英基片上.仿真结果表明,在146.8 GHz处获得最高倍频效率10.3％.实物测试结果显示,在自偏置情况下倍频器在148 GHz处获得最高倍频效率2.3％,在0.7V偏置电压下倍频器在154 GHz处获得最大输出功率1.1 mW.输出功率可以满足多数应用下对信号源的需求,该倍频器对处于大气窗口的140GHz通信系统具有借鉴作用.     

基于分离式二极管的220 GHz高效率倍频器（英文）

在分离式二极管的基础上,实现了220 GHz高效率的二倍频器结构.该倍频器的电路在450μm宽,2. 7mm长的50μm石英基片上实现.测试结果表明,在室温下当驱动功率在46. 4～164 mW时,在214～226 GHz的频段内能够实现大于16%的倍频效率.另外,当驱动功率在161 mW时,倍频器在218 GHz频点能够输出最高功率32 mW,并且在多个频点拥有高于20%的倍频效率.实验证明,所实现的二倍频器能够作为660 GHz倍频链路的驱动前级使用.     

大功率单路和功率合成式100~115GHz 肖特基平衡式二倍频器

研究了基于肖特基二极管的单路和功率合成式110 GHz大功率平衡式二倍频器。单路倍频器电路具有33%的峰值测试效率,且其工作带宽超过13.6%。另外,采用了不同的双路合成结构来实现两种不同的合成式110 GHz倍频器。该功率合成式倍频器在两只127 μm 厚的 ALN 基片上焊接了四个分立的肖特基二极管。在800 mW的驱动功率下,两种合成式倍频器都测得了大于200 mW的输出功率,证明了利用该合成式倍频结构可实现更高输出功率。     

大功率单路和功率合成式100～115 GHz肖特基平衡式二倍频器（英文）

研究了基于肖特基二极管的单路和功率合成式110GHz大功率平衡式二倍频器。单路倍频器电路具有33%的峰值测试效率,且其工作带宽超过13.6%。另外,采用了不同的双路合成结构来实现两种不同的合成式110 GHz倍频器。该功率合成式倍频器在两只127 μm厚的ALN基片上焊接了四个分立的肖特基二极管。在800 mW的驱动功率下,两种合成式倍频器都测得了大于200 mW的输出功率,证明了利用该合成式倍频结构可实现更高输出功率。     

W波段宽带高效率电阻性三倍频器设计

本文基于TSC-AP-03020混频二极管设计了W频带全波段三倍频器,考虑到二极管各种寄生参数的影响,采用去嵌入阻抗的方法,提取二极管物理结构的S参数文件,结合二极管SPICE模型,提取二极管的输入阻抗和三次谐波输出阻抗.基于计算的阻抗,综合分析输入输出阻抗匹配网络和波导-鳍线过渡,采用一体化设计方法,提取倍频器无源电路的整体S参数,通过谐波平衡分析方法,优化倍频器的倍频效率.设计的W波段倍频器在100GHz测得最高倍频效率4.2％.在75-110GHz倍频效率典型值为3.5％,倍频效率响应曲线平坦,性能优于国外同类产品水平,解决了W波段宽带信号源的问题.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first