直流偏置电流对钴基非晶带环形磁芯巨磁阻抗效应的影响

将近零磁致伸缩系数的Co66.3Fe3.7Si12B18非晶薄带卷成环形后,在200Gs横磁场作用下,用密度为25A/mm2的脉冲电流退火30s,在穿过环形薄带圆心的直流电流产生的圆周磁场作用下的巨磁阻抗效应.激励电流频率f＞100kHz时,阻抗随圆周磁场的变化呈现对称双峰曲线;最大阻抗变化率（GMI）max随频率的升高而增大,当频率f=2MHz,幅值Ip=10mA时,（GMI）max=57%.直流偏置电流改变了非晶带横向磁导率,造成阻抗变化的不对称.偏置电流较小时,阻抗变化曲线的一边峰值得到加强,另一边峰值减弱;偏置电流较大时,两峰值都被削弱.阻抗变化的不对称性与激励电流的频率和直流偏置电流大小有紧密联系.     

SOFT MAGNETIC PROPERTIES AND GIANT MAGNETOIMPEDANCE EFFECT IN MAGNETIC FIELD–DEPOSITED FeCuCrVSiB FILMS

采用射频溅射法, 在无磁场和施加72 kA/m的纵向磁场下制备了FeCuCrVSiB软磁合金薄膜样品, 对沉积态样品的软磁特性和巨磁阻抗(GMI)效应进行了测量和分析. 结果表明, 在制备过程中加磁场可明显改善材料的软磁性能, 与无磁场沉积态相比, 样品的矫顽力从1.080 kA/m降低到0.064 kA/m, 在13 MHz频率下有效磁导率比从10%增加到106%. GMI效应与磁导率比的大小密切相关. 无磁场沉积态样品没有检测到GMI效应, 而磁场沉积态样品则具有显著的GMI效应. 在13 MHz 的频率下, 最大纵向和横向巨磁阻抗比分别高达22%和20%. 这些结果都优于厚度几乎相同的退火态FeCuNbSiB薄膜的GMI特性.     

Giant magneto-impedance and permeability in Fe89Zr6Hf1B4 ribbons

1 Introduction The Giant magneto-impedance (GMI) effect has been attracted much attention due to its potential ap-plication in magnetic heads and sensors [1-10]. It has been suggested that the GMI effect can be at-tributed to combinations of the skin effe…     

Giant magnetoimpedance effect in Fe-Zr-Nb-Cu-B nanocrystalline ribbons

The giant magnetoimpedance effect of the nanocrystalline ribbon Fe84Zr2.08Nb1.92Cu1B11 (atom fraction in %) was investigated. There is an optimum annealing temperature (TA=998 K) for obtaining the largest GMI (giant magneto-impedance) effect in the ribbon Fe84Zr2.08Nb1.92Cu1B11. The ribbon with longer ribbon length has stronger GMI effect, which may be connected with the demagnetization effect of samples. The frequency fmax, where the maximum magnetoimpedance GMI(Z)max =[(Z(H)-Z(O)/Z(O)]max occurs, is near the intersecting frequency fi of the curves of GMI(R), GMI(X), and GMI(Z) versus frequency. The magnetoreactance GMI(X) decreases monotonically with increasing frequency, which may be due to the decrease of permeability. In contrast, with the AC (alternating current) frequency increasing, the magnetore-sistance GMI(R) increases at first, undergoes a peak, and under then drops. The increase of the magnetoresistance may result from the enhancement of the skin effect with frequency. The maximum magnetoimpedance value GMI(Z)max under H=7.2 kA/m is about -56.18% at f= 0.3 MHz for the nanocrystalline ribbon Fe84Zr2.08Nb1.92Cu1B11 with the annealing temperature TA=998K and the ribbon length L=6cm.     

沉积态(Fe88Zr7B5)0.97Cu0.03软磁合金薄膜的磁性和巨磁阻抗效应

采用射频溅射法在单晶硅衬底上制备了(Fe88Zr7B5）0．97Cu0．03非晶软磁合金薄膜样品，对沉积态样品的软磁性能和巨磁阻抗(GMI)效应进行了实验研究与机理分析．结果表明，未掺Cu元素的Fe88Zr7B5沉积态合金薄膜几乎无GMI效应，而掺了适量Cu元素的(Fe88Zr7B5)0．97Cu0．03合金薄膜在沉积态下即具有显著的GMI效应．在13MHz频率下，最大纵向磁阻抗比达17％，最大横向磁阻抗比为11％，这表明(Fe88Zr7B5)0．97Cu0.03非晶合金薄膜在沉积态已具备优异的软磁性能和巨磁阻抗效应．同时讨论了该薄膜样品的巨磁阻抗效应随频率的变化特性．     

Co71.8Fe4.9Nb0.8Si7.5B15玻璃包覆非晶丝巨磁阻抗效应研究

本文研究了直流焦耳处理对Co71.8Fe4.9Nb0.8Si7.5B15玻璃包覆非晶丝巨磁阻抗效应的影响.随着处理电流的增大,阻抗最大变化率随之增加,直到最佳处理条件为70mA,阻抗最大变化率为282%.处理电流值进一步提高,阻抗最大变化率下降.本文还研究了偏置电流对经过70mA直流焦耳处理的C021.8Fe4.9Nb0.8Si7.5B15玻璃包覆非晶丝巨磁阻抗效应的影响.随着偏置电流的增加,非对称性逐渐增强,直到偏置电流为2mA;当偏置电流继续增大时,非对称性逐渐减弱.     

制备态FeZrBNi/Ag/FeZrBNi三层膜的巨磁阻抗效应

用射频溅射法在单晶硅衬底上制备了FeZrBNi／Ag／FeZrBNi三层膜,对制备态样品进行了磁阻抗测量．结果表明,样品纵向和横向的最大磁阻抗比分别为18％和31％,取得最大阻抗比的频率分别为7和8MHz;在此频率下,样品的纵向和横向相对磁导率比分别达到153％和5117％．这表明掺Ni的FeZrB三层膜在制备态已具备优异的巨磁阻抗效应和软磁性能．同时还分析了薄膜样品的电阻、电抗分量和有效磁导率随频率的变化关系．     

Giant magneto-impedance effect of two paralleled amorphous microwires

Giant magneto-impedance（GMI）is effectively enhanced by the mutual magnetic interaction between two amorphous microwires.A comparative study on GMI properties of a single wire and two wires arranged in parallel mode was reported in this work.Two-peak（TP）of impedance characteristic is presented when the dc external field changed from 0 to 320 A m^-1in two-wire system,which is attributed to successive magnetization process in two wires induced by their magnetic interaction.And the evolution of single peak to TP phenomenon,when the distance between two wires is upto 8 mm,evidences a distance dependence of transformation from successive magnetization to simultaneous via a corresponding distance dependence of magnetostatic interactions.It is proposed that the recombination of magnetic interaction and the shielding effect results in a distance dependency of GMI response.When the distance is 8 mm,the magnetization process is close to synchronous between two wires,which give rises to higher circular permeability and better GMI response.The impedance ratio DZ/Z increases from74.5 % of single wire to 172.4 % at 10 MHz.However,when the distance is upto 12 mm,the magnetic interaction is weak and magnetization process is completely independent,and GMI response decreases,relatively.This indicates that the GMI response could be effectively improved in a two-wire connection with an opticaldistance,which is promising and useful for the application of high-performance GMI sensors.     

GIANT MAGNETO-IMPEDANCE OF PATTERNED FeSiB／Cu／FeSiB TRI-LAYER FILMS

Sensitive magnetic field sensor with good performances can be fabricated utilizing the giant magneto-impedance (GMI) effect of soft magnetic multi-layer thin films. The transverse and longitudinal GMI effect in patterned FeSiB/Cu/FeSiB tri-layer films with the change of external magnetic field and frequency were studied at the same time. The change of the impedance of the films with the external magnetic fieldand frequency was shown. Comparing the longitudinal and transverse effect, the transverse effect has a larger linear range from zero magnetic field to a quite large magnetic field at all frequencies, and the change still were not saturated until the external magnetic field reached 1.2×104A/m, which illustrated that the films can be utilized to detect larger magnetic fields than now presented GMI sensors.     

复合焦耳处理对Co68.15Fe4.35Si12.5B15非晶薄带巨磁阻抗效应的影响

本文研究了复合焦耳处理对Co68.15Fe4.35Si12.5B15非晶薄带巨磁阻抗效应的影响。实验结果表明：经前段电流密度10A／mm^2,后段电流密度30A／mm^2的复合焦耳处理后样品获得了最大的GMI效应。在8MHz的交变电流频率下,最大磁阻抗比为217％,灵敏度为114％／Oe,比淬态下的最大磁阻抗比和灵敏度均有明显提高。复合焦耳处理是提高材料GMI效应的一种新型的而且十分有效的方法。     

Diphenylthiocarbazone (dithizone)-assisted solvothermal synthesis and optical properties of one-dimensional CdS nanostructures

One-dimensional (1D) cadmium sulfide (CdS) nanostructures with various aspect ratios were successfully synthesized by a diphenylthiocarbazone (dithizone)-assisted solvothermal method. The results showed that the dithizone-assisted synthesized samples had larger aspect ratio than that prepared in the absence of dithizone, and CdS nanowires with the highest aspect ratio were obtained with an appropriate dithizone amount (0.03 g/50 ml ethylenediamine in the present system). All the 1D CdS nanostructures were in hexagonal wurtzite phase. The as-synthesized large-scale CdS nanowires were in diameters ranging from 70 to 80 nm, length up to 20 μm, and aspect ratios of 250-285. Further characterization indicated that the CdS nanowires were single crystalline with a preferential growth orientation of [0 0 2], c-axis. Two optical absorption peaks were observed at about 488 nm and 502 nm for the CdS nanowire sample with high aspect ratio in the optical absorption spectroscopy, which could be attributed to the nanometer effect of nanowires. It was found that the additive dithizone was a crucial factor in controlling the morphology and optical properties of the 1D CdS nanostructures. The growth mechanism of 1D CdS nanostructure and the effects of dithizone in the present system were discussed.     

软磁薄带（丝）的巨磁阻抗效应及其应用

介绍了居磁阻抗效应的来源，综述了它和样品的磁各向异性，驱动电流的频率，样品的电导率及厚度的关系，并简要介绍了它的应用。     

电解液中Ce(NO_3)_3含量对ZAlSi12合金微弧氧化层特性的影响

研究Na2SiO3-NaOH体系电解液中Ce(NO3)3含量在0～0.20g/L范围内变化时对ZAlSi12合金表面微弧氧化陶瓷层组织和厚度的影响。采用SEM、XRD分析微弧氧化处理后陶瓷层的表面形貌和相组成。结果表明:随着Ce(NO3)3含量增加,陶瓷氧化层厚度逐渐增大,电解液中Ce(NO3)3加入量0.15g/L时可获得最大厚度为170μm的陶瓷层;电解液中加入Ce(NO3)3后,膜层仍主要由α-Al2O3和γ-Al2O3相组成,但α-Al2O3相的相对含量增加。     

氧分压分析法鉴定(Bi,Pb)2Sr2Ca2Cu3Ox超导前驱粉性能

利用氧分压分析法对（Bi,Pb）2Sr2Ca2Cu3Ox。超导前驱粉的放氧量进行了定量计算,并考察了放氧量对Bi-2223带材临界电流密度Jc的影响。结果表明,前驱粉中富Pb相Ca2PbO4（简称CP）和（Bi,Pb）2Sr2Ca2Cu3Oy,（简称3221）的总量增加或CP相与3221相含量的比（CP：3221）下降,都导致放氧量增加。放氧量与Jc之间存在直接对应关系：当放氧量为0．32mL／g时带材的Jc最高,放氧量过高或过低均对Jc不利。相应地,可以通过定量计算前驱粉的放氧量预测带材的Jc进而鉴定前驱粉性能。     

Control of exaggerated tungsten carbide grain growth at the diamond-substrate interface of polycrystalline diamond cutters (PDC)

Exaggerated tungsten carbide grain growth is common at the interface between the diamond table and the cobalt-cemented tungsten carbide (WC-Co) substrate in polycrystalline diamond cutters (PDC). The exaggerated WC grains at the interface can grow as large as 50 μm with an aspect ratio of 50:1. These large grains can also grow as clusters. The presence of large WC grains/clusters creates weakness at the diamond-substrate interface and impairs the strength of the PDC tool. In the present investigation, we tried to understand the root cause of exaggerated WC grain growth at the interface. Our findings show that WC grain growth at the interface decreases with a decrease in the carbon/tungsten (C/W) ratio. By adding 5 wt.% pure tungsten powder to the diamond, the C/W ratio decreased and we found no WC grain growth. By adding fully stoichiometric WC, which has 6.13 wt.% carbon, grain growth was reduced but still observed. Sintering on a substrate having η-phase (carbon deficient phase) also decreased the C/W ratio, and we did not observe WC grain growth.     

脉冲磁场致非晶合金纳米晶化及巨磁阻抗研究

对Co68.15Fe4.35Si12.5B15非晶合金薄带进行低频脉冲磁场处理,M?ssbauer谱分析及透射电镜(TEM)观察结果表明,样品发生了初始纳米晶化,晶化量与磁脉冲强度有关。采用巨磁阻抗(简称GMI)测量仪测量样品GMI,结果显示GMI与脉冲磁场强度HP呈非单调变化规律,HP为350 kA·m-1时样品具有最大GMI,其值为263.5%。磁脉冲在样品内感生的横向各向异性对GMI效应产生影响,当外加直流磁场Hex等于感生磁各向异性场Hk时,GMI出现峰值     

NiFeSiMnMo/Cu/NiFeSiMnMo多层膜结构中磁性层厚度对巨磁阻抗效应的影响

在康宁玻璃上用真空蒸镀法沉积NiFeSiMnMo/Cu/NiFeSiMnMo多层膜,对所沉积单层膜的软磁性能随膜厚的变化和多层膜的巨磁阻抗效应随磁性层(NiFeSiMnMo)厚度的变化进行分析.实验结果表明:NiFeSiMnMo单层膜随厚度的增加,矫顽力增大,软磁性能变差;退火后的多层膜的纵向巨磁阻抗比(GMI ratio)的最大值随磁性层NiFeSiMnMo的厚度增加而增加.     

w(Zn)/w(Sn)对铸态Mg-Zn-Sn合金组织及性能的影响

采用金属型铸造制备了不同w(Zn)/w(Sn)的Mg-Zn-Sn(ZT)合金,研究了其铸态下的微观组织及力学性能。结果表明,当Zn和Sn质量分数总和为8%时,随着w(Zn)/w(Sn)的增加,合金晶界粗化,晶界上第二相或共晶数量增加。合金力学性能随w(Zn)/w(Sn)的增高先增加后降低,其中w(Zn)/w(Sn)为5/3时合金强度最高,抗压强度为296MPa,w(Zn)/w(Sn)为3/5时,合金压缩率最高,为21.5%。此外,还分析了Zn、Sn及w(Zn)/w(Sn)对Mg-Zn-Sn合金强度和塑性的影响机制。     

用钒(V)-PAR-NH_2OH-DDMAA混合显色体系测定钒

研究了钒(V)-PAR-羟胺-DDMAA(Dodecyldimethylamino acetic acid)混合显色配位体系的特性.该体系在0.5～0.9mol/L硫酸溶液介质中,其最大吸收峰λ_(max)为560nm波长处,在560nm波长处空白值几乎等于零,摩尔吸光系数∈_560为3.7× 10~4L·mol~(-1)·cm~(-1).配合物的组成比,V(v):PAR:NH_2OH:DDMAA为1:1:1:1:1.0～30μgV~(5+)+/25ml范围内.服从比尔定律,用该方法直接测定钨精矿和钨矿中微量钒,获得了满意的结果.     

On the oxidation ofα-Fe andε-Fe2 N1−z II. Residual strains and blisters in the oxide layer

The development of residual strains in the iron-oxide layers growing on -Fe and -Fe₂N_1–z at 673 K in O₂ at 1 atm was investigated by X-ray diffraction at room temperature. After correction for thermal-strain development due to cooling after oxidation, it was found that tensile growth strains occur in magnetite and compressive growth strains occur in hematite. The growth strains in the oxides on -Fe are (in absolute sense) 2–3 times as large as those in the oxides on -Fe₂N_1–z. Buckling of the oxide layer occurs in the case of an -Fe substrate, which is attributed mainly to relaxation of the growth strains in magnetite and hematite. Thermal-strain development during cooling enhances the tendency for buckling. Buckling is not observed for oxide layers on -Fe₂N_1–z, which could be due to the smaller values of absolute strain in the oxide layer on -nitride. The absolute values of the growth strains in the oxide layer on -nitride being smaller is attributed to microstructural changes in the nitride layer during oxidation.