共查询到20条相似文献,搜索用时 125 毫秒
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研究了搭桥晶粒(BG)多晶硅薄膜晶体管(TFT)在直流电应力下的退化行为和退化机制。与普通多晶硅TFT相比,BG多晶硅TFT展现出更好的直流应力可靠性。主要体现在BG多晶硅TFT拥有更好的直流负偏压温度不稳定性(NBTI)可靠性,更好的直流自加热(SH)可靠性,更好的直流热载流子(HC)可靠性。有源沟道区的BG结构是上述直流应力可靠性提高的主要原因。更好的NBTI的可靠性主要源于沟道内的硼氢键的形成;更好的SH可靠性主要源于在沟道长度方向上更快的焦耳热扩散率;更好的HC可靠性主要源于漏端横向电场(Ex)的减弱。所有的测试结果都表明,这种高性能高可靠性的BG多晶硅TFT在片上系统中具有很大的应用前景。 相似文献
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从kink效应产生的物理机理出发,介绍了目前国内外研究多晶硅薄膜晶体管kink电流所采用的两种主要方法.一种是基于面电荷的方法,另一种是基于求雪崩倍增因子的方法.kink效应具体表现为器件在饱和区跨导和漏电流的显著增加.在数字电路中,kink效应会引起功耗的增加和开关特性的退化;而在模拟电路中,kink效应将降低最大增益和共模抑制比.因此,多晶硅薄膜晶体管kink效应的研究对液晶显示的发展具有重大意义. 相似文献
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二维器件仿真是揭示半导体器件物理机理的有效途径.首先利用二维器件仿真工具构建单栅和双栅多晶硅薄膜晶体管(TFT),并完整地考虑晶界陷阱态的分布规律,即指数分布的带尾态和禁带中央高斯分布的深能态.同时,改变晶界陷阱密度、多晶硅薄膜厚度、温度等条件,以及考虑翘曲(kink)效应,仿真单栅和双栅器件的电流-电压(I-V)特性,分析物理规律,建立对多晶硅TFT器件物理特性的进一步理解. 相似文献
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制作低温多晶硅薄膜晶体管层是制作高性能液晶显示器件技术的一个重要组成部分。本文对制作液晶显示器件的多晶硅薄膜晶体管层工艺及其改进进行了讨论。 相似文献
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针对传统多指SiGe HBT发射极指中心区域和器件中心区域温度较高导致热不稳定问题,提出了新型发射极指分段结构来抑制功率SiGe HBT中心区域的自热效应,提高器件温度分布均匀性.利用有限元软件ANSYS对器件进行建模和三维热模拟,研究器件温度分布的改善情况.结果表明,与传统不分段结构的器件相比,新型分段结构的多指SiGe HBT的指上的温度分布更加均匀、不同指上的温差和集电结结温明显降低,自热效应得到有效抑制,器件的热稳定性得到增强. 相似文献
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Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator 总被引:2,自引:1,他引:1
In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3N4 film as a buried insulator (SOSN) are successfully formed using epitaxial layer transfer technology for the first time.The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile.Experiment results show that the buried Si3N4 layer is amorphous and the new SOI material has good structural and electrical properties.The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs.Furthermore,the channel temperature and negative differential resistance are reduced during high-temperature operation,suggesting that SOSN can effectively mitigate the self-heating penalty.The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET. 相似文献
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S. Bendida J.J. Koning J.J.M. Bontemps J.T.M. van Beek D. Wu M.A.J. van Gils S. Nath 《Microelectronics Reliability》2008,48(8-9):1227-1231
Temperature stability of a piezoresistive 1.5 μm thin SOI resonator at 74 MHz is presented. As compared to capacitive resonators the self-heating due to the bias current causes a further decrease of the resonator frequency, in addition to the well-known dependency on ambient temperature. The interpretation of the resonance frequency as a device temperature is not obvious anymore under self-heating due to the inhomogeneous temperature distribution. 相似文献
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为研究自加热效应对绝缘体上硅(SOI)MOSFET漏电流的影响,开发了一种可同时探测20 ns时瞬态漏源电流-漏源电压(Ids-Vds)特性和80μs时直流静态Ids-Vds特性的超快脉冲I-V测试方法。将被测器件栅漏短接、源体短接后串联接入超快脉冲测试系统,根据示波器在源端采集的电压脉冲的幅值计算漏电流受自加热影响的动态变化过程。选取体硅NMOSFET和SOI NMOSFET进行验证测试,并对被测器件的温度分布进行仿真,证实该方法用于自加热效应的测试是准确有效的,能为建立准确的器件模型提供数据支撑。采用该方法对2μm SOI工艺不同宽长比的NMOSFET进行测试,结果表明栅宽相同的器件,栅长越短,自加热现象越明显。 相似文献
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Workman G.O. Fossum J.G. Krishnan S. Pelella M.M. Jr. 《Electron Devices, IEEE Transactions on》1998,45(1):125-133
To simulate and examine temperature and self-heating effects in Silicon-On-Insulator (SOI) devices and circuits, a physical temperature-dependence model is implemented into the SOISPICE fully depleted (FD) and nonfully depleted (NFD) SOI MOSFET models. Due to the physical nature of the device models, the temperature-dependence modeling, which enables a device self-heating option as well, is straightforward and requires no new parameters. The modeling is verified by DC and transient measurements of scaled test devices, and in the process physical insight on floating-body effects in temperature is attained. The utility of the modeling is exemplified with a study of the temperature and self-heating effects in an SOI CMOS NAND ring oscillator. SOISPICE transient simulations of the circuit, with floating and tied bodies, reveal how speed and power depend on ambient temperature, and they predict no significant dynamic self-heating, irrespective of the ambient temperature 相似文献
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Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses 总被引:1,自引:0,他引:1
Min Xue Mingxiang Wang Zhen Zhu Dongli Zhang Man Wong 《Electron Devices, IEEE Transactions on》2007,54(2):225-232
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low Vd-stress and in high Vd-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low Vd-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress 相似文献
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Poor thermal conductivity of GaAs, a self-heating phenomenon which results in the rapid rise of device temperature, is the major factor that limits and even degrades the electrical performance of GaAs-based heterojunction bipolar transistor (HBT) operated at high power densities. On the basis of this consideration, a numerical model is presented to study the interaction mechanism between the thermal and electrical behavior of AlGaAs/GaAs HBT with multiple-emitter fingers. The model mainly comprises a numerical model applicable for multi-finger HBT that solves the three-dimensional heat transfer equation. The device design parameters that influence the temperature profile and current distribution of the device are identified, and optimization concerning the device performance is made. 相似文献