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1.
The dc conductivities (σ) of V2O5-P2O5 glasses containing up to 30 mol% TiO2 were measured at T=100° to ∼10°C below the glass-transition temperature. Dielectric constants from 30 to 106 Hz, densities, and the fraction of reduced V ion were measured at room temperature. The conduction mechanism was considered to be small polaron hopping between V ions, as previously reported for V2O5-P2O5 glass. The temperature dependence of σ was exponential with σ = σ0 exp(-W/kT ) in the high-temperature range. When part of the P2O5 was replaced by TiO2,σ increased and W decreased. The hopping energy depended on the reciprocal dielectric constant which, in this case, increased with increasing TiO2 content.  相似文献   

2.
Crystallization of V2O3 from V2O3P2O3, glasses containing 0 to 9 mol% B2O3, during heat treatment in the range 220° to 410°C, caused progressive micro structural changes which dramatically affected the electronic conductivity (γ), the activation energy for conduction ( W ), and the resistance to chemical attack. All compositions were ≊83% crystalline after heating to 410°C. As a result, the values of γ and W were almost identical to those observed for pure polycrystalline V2O5.  相似文献   

3.
The modification of the densification behavior and the grain-growth characteristics of the microwave-sintered ZnO materials, caused by the incorporation of V2O5 additives, have been systematically studied. Generally, the addition of V2O5 markedly enhances the densification rate, such that a density as high as 97.9% of the theoretical density and a grain size as large as 10 µm can be attained for a sintering temperature as low as 800°C and a soaking time as short as 10 min. Increasing the sintering temperature or soaking time does not significantly change the sintered density of the ZnO-V2O5 materials but it does monotonously increase their grain size. Varying the proportion of V2O5 in the range of 0.2-1.0 mol% does not pronouncedly modify such behavior. The leakage current density ( J L) of these high-density and uniform-granular-structure samples is still large, which is amended by the incorporation of 0.3 mol% of Mn3O4 in the ZnO materials, in addition to 0.5 mol% of the V2O5 additives. Samples that are obtained using such a method possess good nonohmic characteristics (α= 23.5) and a low leakage current density ( J L= 2.4 10-6 A/cm2).  相似文献   

4.
Superionic conductor α-AgI, which is stable only above 147°C, was successfully frozen at ambient temperature in AgI─Ag2O─MxOy (MxOy= WO3, V2O5) glass matrices by a twin-roller-quenching technique. The system with WO3, provided the larger composition regions where α-AgI was frozen at ambient temperature, compared to the system with V2O5. The matrix glasses with higher glass-transition temperatures had a stronger effect in depressing the α–β transformation of AgI. The α-AgI-frozen samples exhibited extremely large conductivities of 3 × 10−2-5 × 10−2S.cm−1at 25°C.  相似文献   

5.
The influence of 0–16 mol% Sb2O3 substitution for P2O5 on the properties of ZnO–P2O5 glasses has been investigated. It was shown that Sb2O3 could participate in the glass network and thermal stability of the glasses decreased with increasing Sb2O3 content. Glass transition temperature T g, softening temperature T s, and water durability all decreased firstly (up to 6 mol% Sb2O3 added) and then increased. Substitution of 12 mol% Sb2O3 led to a 16°C decrease in T g and 30°C decrease in T s, and weight loss of the glass was only 0.42 mg/cm2, which is ∼11 times lower than that of the glass without Sb2O3 after immersion in deionized water at 90°C for 1 day. The glass containing 12 mol% Sb2O3 might be a substitute for Pb-based glasses in some applications.  相似文献   

6.
The effects of V2O5 addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li2O–0.583Nb2O5–3.248TiO2 (LNT) ceramics have been investigated. With addition of low-level doping of V2O5 (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V2O5 addition. The addition of V2O5 does not induce much degradation in the microwave dielectric properties but lowers the τf value to near zero. Typically, the excellent microwave dielectric properties of ɛr=21.5, Q × f =32 938 GHz, and τf=6.1 ppm/°C could be obtained for the 1 wt% V2O5-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.  相似文献   

7.
The effects of the addition of V2O5 on the sintering behavior, microstructure, and microwave dielectric properties of 5Li2O–1Nb2O5–5TiO2 (LNT) ceramics have been investigated. With low-level doping of V2O5 (≤3 wt%), the microstructure of the LNT ceramic changed from a special two-level intergrowth structure into a two-phase composite structure with separate grains. And the sintering temperature of the LNT ceramics could be lowered to around 900°C by adding a small amount of V2O5 without much degradation in microwave dielectric properties. Typically, better microwave dielectric properties of ɛr=41.7, Q × f =7820 GHz, and τ f =45 ppm/°C could be obtained for the 1 wt% V2O5-doped ceramics sintered at 900°C.  相似文献   

8.
The compositional range for glass formation below 1600°C in the Sm2O3─Al2O3─SiO2 system is (9–25)Sm2O3─(10–35)Al2O3─(40–75)SiO2 (mol%). Selected properties of the Sm2O3─Al2O3─SiO2 (SmAS) glasses were evaluated as a function of composition. The density, refractive index, microhardness, and thermal expansion coefficient increased as the Sm2O3 content increased from 9 to 25 mol%, the values exceeding those for fused silica. The dissolution rate in 1 N HCl and in deionized water increased with increasing Sm2O3 content and with increasing temperature to 70°C. The transformation temperature ( T g ) and dilatometric softening temperature ( T d ) of the SmAS glasses exceeded 800° and 850°C, respectively.  相似文献   

9.
Phase equilibria in the system SrO-CdO-V2O5 in air were established from data obtained by DTA, quenching, and high-temperature solid-state reaction experiments. The SrO-V2O5 boundary system contains 4 compounds at SrO to V2O5 molar ratios of 4:1, 3:1, 2:1, and 1:1. A fifth compound with a molar composition of ∼10:3 with the apatite crystal structure was also found; it may, however, be a hydroxyapatite phase. The CdO-V2O5 system contains the compounds 3CdO·V2O5, 2CdO·V2O5, and CdO·V2O5. The latter compound exhibits a rapid reversible polymorphic transition at 180°C. Complete solid solubility exists in the SrO-CdO system. The most probable compatibility relations were determined from the data available for the SrO-CdO-V2O5 ternary system. Limited solid solubility exists between SrO·V2O5 and CdO·V2O5, and the high-temperature CdO·V2O5 polymorph is stabilized to room temperature by solid solution of SrO·V2O5. Evidence for the existence of 2 ternary compounds with limited local solid solubility is also presented.  相似文献   

10.
Electrical conduction in tetragonal β-Bi2O3 doped with Sb2O3 was investigated by measuring electrical conductivity, ionic transference number, and Seebeck coefficient. The β-Bi2O3 doped with 1 to 10 mol% Sb2O3 was stable up to 600°C and showed an oxygen ionic and electronic mixed conduction, where the electron conduction was predominant at low oxygen pressures. The oxygen-ion conductivity showed a maximum at 4 mol% Sb2O3, whereas the activation energy for the ionic conduction remained unchanged for 4 to 10 mol% Sb2O3-doped specimens. These results were interpreted in terms of the oxygen vacancy concentration and the distortion of the tetragonal structure. The electron conductivity and its oxygen pressure dependence decreased with increasing Sb2O3 content. The fact that Sb5+ is partially reduced by excess electrons in heavily doped β specimens at low oxygen pressures is explained.  相似文献   

11.
Electrical conductivity and thermoelectric power were measured on sintered α-Sb2O4 at 250° to 780°C. Oxygen partial pressure dependence of the conductivity and sign of the Seebeck coefficient showed α-Sb2O4 to be a p -type semiconductor above 600°C in the oxygen pressure range of lo5 to 102 Pa. A hopping conduction was proposed from very small hole mobility with an activation energy of 18 kJ/mol.  相似文献   

12.
Niobium pentoxide (T form, orthorhombic system) was utilized to promote devitrification in Li2O · Al2O3· 6SiO2 glasses. Two or more mole percentage of this nucleating dopant enhanced crystallization in these glasses. Glasses containing 4.0 and 8.0 mol% T-Nb2O5 exhibited a high tendency to form dispersed TT-Nb2O5 (monoclinic system) precipitates during the glass quenching process. The crystallization process in glasses containing 2.0 or 4.0 mol% T-Nb2O5 occurred as microphase separation, followed by the formation of dispersed TT-Nb2O5 crystalline precipitates (760°C), followed by β-quartz solid-solution ( ss ) formation (850° to 900°C) heterogeneously nucleated from the precipitates. β-quartz( ss ) transformed to β-spodumene( ss ), along with a polymorphic transition from the TT-Nb2O5 to M-Nb2O5 (tetragonal system) crystalline phase.  相似文献   

13.
The effect of P2OS on the devitrification of binary lead silicate glasses containing 64 and 59 mol% PbO was studied. Glasses underwent isothermal crystallization treatments at 400°, 450°, 500°, and 550°C. A polymorph of 3PbO2SiO2 was the major product of crystallization for all compositions of glasses. Secondary products of crystallization were found to be a polymorph of PbOSiO2 in the 59 mol% and a low-temperature polymorph of 2PbOSiO2 in the 64 mol% PbO glasses. Dominant mode of crystallization in both binary glasses was surface devitrification at all temperatures studied. Addition of P2O5 promoted internal crystallization in the form of spherulites. 400°C was found to be the most effective temperature for nucleating spherulitic growth. Crystallization at 400°C led to high concentrations of spherulites in all glasses containing at least 0.5 mol% P2O5. Concentrations of 0.5 mol% P2O5 were needed to produce detectable levels of spherulitic nucleation at r<400°C.  相似文献   

14.
In the system Ta2O3-Al2O5 solid solutions of metastable δ-Ta2O5 (hexagonal) are formed up to 50 mol% Al2O3 from amorphous materials prepared by the simultaneous hydrolysis of tantalum and aluminum alkoxides. The values of the lattice parameters decrease linearly with increasing Al2O3, content. The to β-Ta2O5 (orthorhombic, low-temperature form) transformation occurs at ∼950°C. The solid solution containing 50 mol% Al2O3 transforms at 1040° to 1100°C to orthorhombic TaAlO4. Orthorhombic TaAlO4 contains octahedral TaO6 groups in the structure.  相似文献   

15.
The phase relations for the system y2o3–Ta2o5 in the composition range 50 to 100 mol% Y2O3 have been studied by solid-state reactions at 1350°, 1500°, or 17000C and by thermal analyses up to the melting temperatures. Weberite-type orthorhombic phases (W2 phase, space group C2221), fluorite-type cubic phases (F phase, space group Fm3m )and another orthorhombic phase (O phase, space group Cmmm )are found in the system. The W2 phase forms in 75 mol% Y2O3 under 17000C and O phase in 70 mol% Y2O3 up to 1700°C These phases seem to melt incongruently. The F phase forms in about 80 mol% Y2O3 and melts congruently at 2454° 3°C. Two eutectic points seem to exist at about 2220°C 90 mol% Y2O3, and at about 1990°C, 62 mol% Y2O3. A Phase diagram including the above three phases were not identified with each other.  相似文献   

16.
The evaporative decomposition of solutions method was used to form V2O5. Spraying above the congruent melting temperature of V2O5 (690°C) resulted in dense spherical particles with a smooth surface. Spraying below the V2O5 melting temperature yielded porous V2O5 powder with a rough surface. Reduction of the V2O5 to V2O3 was done in a H2 atmosphere. Spherical V2O3 powder was attained when the reduction temperature was low enough to reduce the V2O5 surface before partial sintering (necking) between V2O5 particles occurred. The resulting V2O3 particle size was smaller than the precursor V2O5 powder as expected by the differences in densities between V2O5 ( p = 3.36 g/cm3) and V2O3 ( p = 4.87 g/cm3).  相似文献   

17.
Phase relations within the "V2O3–FeO" and V2O3–TiO2 oxide systems were determined using the quench technique. Experimental conditions were as follows: partial oxygen pressures of 3.02 × 10−10, 2.99 × 10−9, and 2.31 × 10−8 atm at 1400°, 1500°, and 1600°C, respectively. Analysis techniques that were used to determine the phase relations within the reacted samples included X-ray diffractometry, electron probe microanalysis (energy-dispersive spectroscopy and wavelength-dispersive spectroscopy), and optical microscopy. The solid-solution phases M2O3, M3O5, and higher Magneli phases (M n O2 n −1, where M = V, Ti) were identified in the V2O3–TiO2 system. In the "V2O3–FeO" system, the solid-solution phases M2O3 and M3O4 (where M = V, Ti), as well as liquid, were identified.  相似文献   

18.
Some K2O-Nb2O5-GeO2 glasses are prepared, and their crystallization behaviors are examined. 25K2O·25Nb2O5·50GeO2 glass with the glass transition temperature T g= 622°3C and crystallization onset temperature T x= 668°3C shows a prominent nanocrystallization. The crystalline phase is K3,8Nb5Ge3O20,4 with an orthorhombic structure. The sizes of crystals in the crystallized glasses heat-treated at 630° and 720°3C for 1 h are °10 and 20–30 nm, respectively, and the crystallized glasses obtained by heat treatments at 620°-850°3C for 1 h maintain good transparency. The density of crystallized glasses increases gradually with increasing heat-treatment temperature, and the volume fraction of crystals in the sample heat-treated at 630°3C for 1 h is estimated to be ∼35%. The usual Vickers hardness and Martens hardness (estimated by nanoindentation) of 25K2O·25Nb2O5·50GeO2 glass change steeply by heat treatment at T g, i.e., at around 35% volume fraction of nanocrystals. The present study demonstrates that the composite of nanocrystals and the glassy phase has a strong resistance against deformation during Vickers indenter loading in crystallized glasses.  相似文献   

19.
The monolithic glass-forming region of the low phonon and low softening point antimony glasses containing high Sb2O3 (40–75 mol%) in the novel quaternary K2O–B2O3–Sb2O3–ZnO system has been found with the help of X-ray diffraction (XRD) analysis. The structure of a series of glasses with the general composition of (mol%) 15K2O–15B2O3–(70− x )Sb2O3– x ZnO (where x =5–25) has been evaluated by infrared reflection spectral (FT-IRRS) analyses. All the glasses are found to possess a low phonon energy of around 600 cm−1, as revealed by FT-IRRS. Their softening point ( T s), glass transition temperature ( T g), and coefficient of thermal expansion (CTE) have been found to vary in the ranges of 351°–379°C, 252°–273°C, and 195–218 × 10−7 K−1, respectively. These properties are found to be controlled by their fundamental property, like the covalent character of the glasses, which is found to increase with an increase in Sb2O3 content. In addition, the devitrified glasses have been characterized by XRD and field emission scanning electron microscopy, which manifests the presence of nanozinc antimony oxide crystals with sizes of 21–43 nm. The exhibited properties have revealed that they are a new class of versatile materials.  相似文献   

20.
Subsolidus phase relationships in the Ga2O3–In2O3 system were studied by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800°–1400°C. The solubility limit of In2O3 in the β-gallia structure decreases with increasing temperature from 44.1 ± 0.5 mol% at 1000°C to 41.4 ± 0.5 mol% at 1400°C. The solubility limit of Ga2O3 in cubic In2O3 increases with temperature from 4.X ± 0.5 mol% at 1000°C to 10.0 ± 0.5 mol% at 1400°C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO3, which is not stable, but is likely the In-doped β-Ga2O3 solid solution.  相似文献   

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