等离子体浸没离子注入绝缘材料的研究

等离子体浸没离子注入是一种新形式的离子注入技术,是利用负偏压工件周围形成的等离子体鞘层进行离子加速、进而获得离子注入.等离子体注入的前提条件是工件导电,因此对于绝缘材料的等离子体注入可能存在问题.本文从理论和实际处理的角度论证了绝缘材料等离子体注入的可能性、可操作性,并给出了一些实际例证.     

等离子体浸没离子注入圆筒内表面的时空尺度

等离子体浸没离子注入与工件外表面的注入不同 ,存在空间和时间上的尺度。研究结果表明 ,由于内腔 ,如内筒的有限尺寸 ,使注入电压的利用率降低 ,同时使内部等离子体快速耗尽 ,对于特定的内筒 ,利用提高注入电压从而提高注入能量只能在一定的电压范围内实现。在典型的外表面注入工艺条件下 ,内表面离子的耗尽速度是惊人的。如在对于直径 2 0cm的圆筒在 30kV、2× 10 15ions/cm3的条件下 ,等离子体耗尽时间仅为 0 .5 5 μs ,这个时间甚至小于多数脉冲电源的上升沿时间。结果表明 ,内部等离子体源的硬件结构可能是一种有效的解决方法。     

全方位离子注入及增强沉积工业机和应用

报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。     

磁过滤等离子体沉积和注入技术

利用阴极真空弧放电技术能够产生高密度的金属等离子体。经过90度的磁过滤器，可以除去金属等离子体中的大颗粒微粒，从而为制备高质量的、致密的各种薄膜提供了一种全新的技术。利用该技术制备薄膜具有非常广泛的应用。本文介绍了阴极真空弧放电技术的应用，以及磁过滤等离子体沉积和注入装置及其应用。     

HL-1M装置边缘等离子体特性研究

边缘和芯部等离子体的同时控制对优化托卡马克等离子体性能是重要的。边缘等离子体密度、温度和空间电位等通常采用朗缪尔静电探针测量,而旋转速度可用马赫探针测量。好的加料技术对于获得高性能等离子体也很重要,在HL-1M装置上已开展了8发弹丸注入和分子束注入(MBI)加料实验,它能使等离子体产生中空的温度和电流密度分布,并容易获得高密度和良好的约束。本文主要介绍在低杂波电流驱动(LHCD)、多发弹丸注入和MBI三种典型放电中边缘等离子体参数的测量结果。     

强脉冲离子注入中的脉冲能量效应研究

在脉冲离子束流密度为15120A/cm2、脉宽为50150ns、加速电压为150260kV范围内,在11014cm-2的低注量水平上, 研究了高功率Cn++H+混合离子束注入45号钢样品的强脉冲能量效应。摩擦磨损和微观硬度测量以及SEM和X射线衍射分析表明,上述低注量强脉冲离子束注入可以改变材料 表面的微观结构和力学特性,而且强烈依赖于单个脉冲离子束的功率密度和能量密度。在相同离子注量条件下,普通C++H+离子注入对45号钢样品表面微硬度和摩擦系数未 见明显影响。直接证明了强脉冲能量效应在离子注入中是相对独立于注入元素掺杂效应的又一可利用的重要效应。基于一维导热模型,讨论了强脉冲能量效应以及脉冲离 子束功率密度对离子束材料表面改性的作用。     

托卡马克超声分子束注入加料的进展

超声分子束注入作为一种新的托卡马克加料方法由作者在1992年首次提出并于当年在中国环流器一号(HL-1)装置演示成功,随后相继应用于中国环流器新一号(HL-1M)和中国科学院超导托卡马克HT-7装置。超声分子束注入等离子体呈现出电子密度峰化和温度中空分布的特征;等离子体流极向旋转速度提高,边缘扰动被抑制,等离子体能量约束得到改善。加料效率较常规脉冲送气提高一倍,而滞留器壁的粒子大为减少。近期开展的高气压氢超分子束注入实验,在束流中发现团簇流,可注入等离子体中心区域。多脉冲分子束注入形成电子密度的阶跃上升,如同冰弹丸注入效果。近年来该项技术已陆续应用于国外大型托卡马克和仿星器,是核聚变装置稳态运行的一种有效的加料方法。     

HL-1M多脉冲分子束注入的CCD摄像

HL-1M装置实现了一种新的气体加料改善约束的方法——分子束注入(用多脉冲高速分子束注入加料)。多脉冲分子束注入加料可以控制等离子体密度分布、改善约束性能和提高密度极限。HL-1M托卡马克的多脉冲分子束注入得到了高的加料效率、改进了能量约束并维持了较高的密度峰化截面。分子束加料τ_E的改善和     

托卡马克LHCD系统的等离子体电流熄灭保护技术

根据实际HT－7托卡马克的实验需要,提出并实现了等离子体电流熄灭保护装置,杜绝了等离子体电流熄灭或在低等离子体电流下,强功率、长脉冲的低杂波对托卡马克装置及低杂波系统的威胁。     

钛离子注入9Cr18钢的强流脉冲电子束后处理

对９Ｃｒ１８钢经Ｔｉ＾＋离子注入后又使用脉冲强流电子束进行了表面辐照处理用ＡＥＳ分析了注入层的成分,考查了电子束处理前后的硬度,并讨论了脉冲强流电子对离子注入金属材料表面成分产生辐照增强扩散的影响。     

Development and experimental study of large size composite plasma immersion ion implantation device

Plasma immersion ion implantation(PⅢ) overcomes the direct exposure limit of traditional beamline ion implantation, and is suitable for the treatment of complex work-piece with large size. PⅢ technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PⅢ device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m~3, and maximum vacuum degree is about 5?×?10~(-4) Pa. The density of RF plasma in homogeneous region is about 10~9 cm~(-3), and plasma density in the ion implantation region is about 10~(10) cm~(-3). This device can be used for large-size sample material PⅢ treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.     

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10¹⁵ ions/cm² was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.     

High temperature oxidation resistance of fluorine-treated TiAl alloys: Chemical vs. ion beam fluorination techniques

The modification of the alloy surface by halogens significantly improves their oxidation behaviour at high temperature. It corresponds to the preferential reaction of the aluminium with the applied fluorine at the oxide/alloy interface and it promotes the growth of an adherent and stable alumina layer.Well-defined fluorine profiles beneath the surface of the material can be achieved by either fluorine beam line ion implantation (BLI²) or plasma immersion ion implantation (PI³). As an alternative to the implantation-based approach, chemical fluorination techniques such as gas-phase treatment and dipping in F-based solutions were also investigated. The fluorine depth-profiles were measured before and after oxidation at 900 °C using non destructive ion beam analyses: Proton Induced Gamma-ray Emission (PIGE), Rutherford Backscattering Spectroscopy (RBS) as well as Elastic Recoil Detection Analysis (ERDA). It enables to control and to optimise the fluorination conditions of technical TiAl alloys for an industrial application.     

离子注入与离子束混合两用机

早在1979年,为了解决应用于高温高真空环境下的轴承的自润滑问题,我们就着手采用     

Ions Bombardment in Thin Films and Surface Processing

Ions bombardment is very important in thin films and surface processing.The ion energy and ion flux are two improtant parameters in ion bombardment.The ion current density mainly dependent on the plasma density gives the number of energetic ions bombarding the substrate.The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate.RF discharge can increase plasma density and RF bias can also provide the insulator substrate with a plasma sheath.In order to choose and control ion energy,ion density,the angle of incidence,and ion species,ion beam sources are used.New types of electrodeless ion sources(RF,MW,ECR-MW) have been introduced in detail,In the last,the effects of ion bombardment on thin films and surface processing are presented.     

Long range implantation by MEVVA metal ion source

Metal vapor vacuum are(MEVVA)source ion implantation is a new technology used for achieving long range ion impantation.It is very improtant for research and application of the ion beam modification of materials.The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose.The implanted depth is 3-11.6 times greater than that of the corresponding ion range.The ion species.doses and ion fluxes play an importnat part in the long-range implantation.Especially,thermal atom chemistry have specific effect on the long-range implatation during high ion flux implantation at transient high target temperature.     

MEVVA离子源及其应用

综述了ＭＥＶＶＡ离子源在金属硅化物，磁性薄膜，准晶材料和表面复合材料的制备以及电催化，抗腐蚀，抗高温氧化，抗疲劳和磷酸盐玻璃抗风化等研究领域的应用。     

高功率脉冲离子束注入初步研究

离子注入用于半导体器件和大规模集成电路的生产中,显示出这种工艺的许多优越性。七十年代初期,哈威尔实验室等研究部门开始进行离子注入技术在非半导体材料中的应用研究。大量实验结果表明,仅几千埃的注入深度就能对金属材料的磨损和抗氧化性能起积极的影响,如一定浓度的氮离子注入钢能显著提高钢材的耐磨性,而且小于0.5μm的注入层能使20μm深度处的耐磨性仍有改善;适当剂量的Cr和Zr注入氧化铝陶瓷中,能起到硬化作用;     

Generation characteristics of a metal ion plasma jet in vacuum discharge

To improve the performance of a metal ion plasma jet in vacuum discharge,an anode-insulated cone-cylinder electrode with insulating sleeve is proposed in this paper.Discharge characteristics and generation characteristics of plasma of the electrode are investigated,effects of diameter of insulating sleeve,variety of cathode material and length of the insulating sleeve on characteristics of metal ion plasma jet are discussed.Results indicate that a directional and steady plasma jet is formed by using the novel electrode with insulating sleeve under high vacuum conditions.Moreover,the properties of metal ion plasma jet are improved by using the aluminum cathode and thin and long insulating sleeve.The study provides strong support for research of vacuum metal ion plasma thruster and ion implantation technology.