浅谈刀尖半径补偿在数控车削中的应用

随着机械加工行业的迅猛发展,数控机床越来越多的在机械加工行业被使用,数控车床是数控加工中普遍应用的机床,相比于传统的普通车床加工,数控车床的刀具半径补偿功能很好的解决刀具因加工过程中磨损和自身结构等原因带来的加工精度降低的问题,本文对数控车削中使用刀尖半径补偿功能的原因及如何应用刀尖半径补偿等进行简要的分析。     

浅谈数控加工工艺中切削用量的选择

切削用量是控制数控机床加工质量好坏的关键性因素,而切削用量由背吃刀量、切削速度和进给量这三个要素组成,因此刀具的使用寿命、加工效率都可以通过切削用量的选择得到改善。随着数控机床工作量的增大,零件精密度的要求也越来越高,CAD/CAM技术的运用使得零件的加工精度有了很大的改善。本文针对数控机床加工工艺中的重要参数切削用量进行重点研究,为提高数控机床的工作效率提供一些理论依据。     

地面对卫星瞄准精度受大气湍流的影响分析

分析了地面对卫星激光瞄准精度受大气湍流效应的影响。首先,提出了大气湍流作用下地面对卫星激光瞄准精度的概念。其次,采用多层相位屏的数值方法求解激光大气传输满足的抛物型方程,仿真研究了不同发射参数下地面对卫星的激光瞄准精度,结果表明:地面对卫星的激光瞄准精度与激光束的发射口径成正比,发射口径越大,瞄准精度越高;而与激光束的发散角成反比,光束发散角越大,瞄准精度越低。最后,比较研究了不同瞄准精度下到达卫星入瞳处的功率以及功率密度。研究成果可为开展地面对抗卫星的试验提供理论依据和数据参考。     

基于目标照明回光的瞄准误差修正方法精度分析及实验验证

激光发射系统通常受到瞄准误差的影响,使得发射光束的中心偏离靶目标,造成能量传输损失和系统性能下降。激光对目标照明后的散射回光信号可以反映瞄准误差的信息,通过对散射回光信号的测量可以对瞄准误差进行修正来提高激光发射系统的瞄准性能。研究了一种基于目标照明回光的瞄准误差修正方法。利用目标回光信息与瞄准误差的关系,通过随机并行梯度下降(SPGD)算法对瞄准误差进行校正,分析了影响瞄准误差校正精度的因素。实验数据验证了理论分析结果。     

远场激光瞄准过程中光束扩展的影响分析

基于修正的Von Karman湍流谱和Hufnagel-Vally湍流模型上的近似积分理论,结合一种激光光轴瞄准偏差测试系统,利用激光光斑远场实验数据,在一定气象条件下,研究了不同传输距离和波束扩展的变化关系,进而分析了高斯脉冲光束在湍流大气中远场传播时的波束扩展对激光瞄准精度的影响。该研究可为激光光斑瞄准偏差补偿方案的优化设计提供科学依据。     

利用极大似然法统计回波信号实现光束闭环瞄准实验研究

瞄准偏差和光束抖动是光束瞄准系统中的两个最重要的误差。对以高斯光束和高斯抖动为基础的光束瞄准目标时产生的光回波信号进行数学建模;结合极大似然估计算法理论,建立并完善了基于回波信号的光束瞄准误差估计模型;并编写程序实现了Monte Carlo模型仿真,搭建了实验室平台。仿真和实验结果表明,极大似然估计算法表现出了优良的性能,能够同时准确地估计出瞄准偏差和光束抖动,信号样本越大其估计精度越高,且实验结果和仿真结果吻合得很好。在此基础上,根据实时偏差估计实现了实验室光束闭环瞄准实验。     

光电跟瞄系统瞄准精度测试技术

为了提高多传感器光电跟瞄系统瞄准精度,提出了多传感器光电跟瞄系统瞄准精度测试的3种方法:像纸法、CCD法和靶标法。系统采用宽光谱大口径平行光管,结合光电跟瞄系统的激光、红外和电视分系统,实现激光与红外/电视瞄准线高精度测试。详细介绍了每种测试方法的工作原理和主要误差来源,建立了实验测试环境,分别用像纸法、CCD法和靶标法对同一光电跟瞄系统红外、电视、激光传感器的瞄准线之间的偏差进行了测试和误差分析。结果表明,靶标法测试误差源少,精度能够达到4″,适用于高精度光电跟瞄系统瞄准精度测试。     

数控机床精度检测装置及分析

数控机床精度检测装置是数控机床加工精度的重要保证,其作用是检测各种位移和速度并发送反馈信号,构成闭环控制。本文介绍了数控机床接触式脉冲编码器的工作原理及其它常用检测装置的作用和特点。     

数控刀具管理系统的研究背景与现状

数控机床以其精度高、生产效率高、复合性好等优势迅速占据了制造业的大部分市场份额,具备高柔性和高刚性的紧凑型数控机床得到了广泛应用。FMS的大量应用在一定程度上解决了制造业中存在的效率问题、成本问题以及质量问题。但是随着刀具种类和数量的不断增加,如何对FMS中的数控刀具进行有效管理,提高刀具管理工作的质量与效率是我国FMS企业发展中面临的新挑战。     

数控机床可靠性试验数据抽样方法研究

针对数控机床可靠性研究中数据抽样问题进行了研究.在通过对简单随机抽样、分层随机抽样和二阶抽样的实例计算之后,证明二阶抽样在抽样样本量为简单随机抽样的1/2时,其样本方差远小于简单随机抽样的样本方差;在样本量与分层随机抽样相同的情况下,其样本方差也要远小于分层随机抽样方差,提高了抽样数据的可信度和精度,从而肯定了二阶抽样方法对于数控机床可靠性研究中数据抽样问题的适用性,节约了抽样成本.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.