Thermal conductance and thermopower of an individual single-wall carbon nanotube

We have observed experimentally that the thermal conductance of a 2.76-microm-long individual suspended single-wall carbon nanotube (SWCNT) was very close to the calculated ballistic thermal conductance of a 1-nm-diameter SWCNT without showing signatures of phonon-phonon Umklapp scattering for temperatures between 110 and 300 K. Although the observed thermopower of the SWCNT can be attributed to a linear diffusion contribution and a constant phonon drag effect, there could be an additional contact effect.     

Peptide-mediated formation of single-wall carbon nanotube composites

The formation of silica- and titania-coated single-wall carbon nanotubes (SWNTs) using a mutlifunctional peptide to both suspend SWNTs and direct the precipitation of silica and titania at room temperature is demonstrated.     

High-performance single-wall carbon nanotube transparent conductive films

A single-wall carbon nanotube(SWCNT) has superior optical,electrical,and mechanical properties due to its unique structure and is therefore expected to be able to form flexible high-performance transparent conductive films(TCFs).However,the optoelectronic performance of these films needs to be improved to meet the requirements of many devices.The electrical resistivity of SWCNTTCFs is mainly determined by the intrinsic resistivity of individual SWCNTs and their junction resistance in networks.We analyze these key factors and focus on the optimization of SWCNTs and their networks,which include the diameter,length,crystallinity and electrical type of the SWCNTs,and the bundle size and interconnects in networks,as well as chemical doping and microgrid design.We conclude that isolated/small-bundle,heavily doped metallic or semiconducting SWCNTs with a large diameter,long length and high crystallinity are necessary to fabricate high-performance SWCNTTCFs.A simple,controllable way to construct macroscopic SWCNT networks with Y-type connections,welded junctions or microgrid design is important in achieving a low resistivity.Finally,some insights into the key challenges in the manufacture and use of SWCNT TCFs and their prospects are presented,hoping to shed light on promoting the practical application of SWCNT TCFs in future flexible and stretchable optoelectronics.     

Electroluminescence from single-wall carbon nanotube network transistors

The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.     

Thermal boundary resistance between the end of an individual carbon nanotube and a Au surface

The thermal boundary resistance between an individual carbon nanotube and a Au surface was measured using a microfabricated hot-film sensor. We used both closed and open-ended multi-walled carbon nanotubes and obtained thermal boundary resistance values of 0.947-1.22 × 10(7) K W(-1) and 1.43-1.76 × 10(7) K W(-1), respectively. Considering all uncertainties, including the contact area, the thermal boundary conductances per unit area were calculated to be 8.6 × 10(7)-2.2 × 10(8) W m(-2) K(-1) for c-axis orientation and 4.2 × 10(8)-1.2 × 10(9) W m(-2) K(-1) for the a-axis. The trend in these values agrees with the predicted conductance dependence on the interface orientation of anisotropic carbon-based materials. However, the measured thermal boundary conductances are found to be much larger than the reported results.     

Charge noise in liquid-gated single-wall carbon nanotube transistors

The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits and sensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with the length of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strong evidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel length of the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on the noise magnitude in SWNT-FETs.     

Structure of semidilute single-wall carbon nanotube suspensions and gels

The microscopic network structure of surfactant-stabilized single-wall carbon nanotubes (SWNTs) in water was investigated as a function of SWNT concentration in the semidilute (overlapping) regime using small-angle neutron scattering (SANS). Most of the samples exhibit rigid rod behavior (i.e., Q(-1) intensity variation) at large scattering wavevector, Q, and a crossover to network behavior (i.e., approximately Q(-2) intensity variation) at low Q. The mesh size, xi, of the network was determined from the crossover of rigid rod to network behavior in the SANS intensity profile and was found to decrease with increasing SWNT concentration. When the dispersion quality of these associating rigid rods was degraded, only approximately Q(-2) intensity variation was observed at both high and low Q. Small-angle X-ray scattering measurements of the same stable dispersions were relatively insensitive to network structure because of poor contrast between SWNTs and surfactant.     

A triple quantum dot in a single-wall carbon nanotube

A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams. Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anticrossings between indirectly coupled levels and higher order cotunneling are discussed.     

Design criteria for transparent single-wall carbon nanotube thin-film transistors

A study based on two-dimensional percolation theory yielding quantitative parameters for optimum connectivity of transparent single-wall carbon nanotube (SWNT) thin films is reported. Optimum SWNT concentration in the filtrated solution was found to be 0.1 mg/L with a volume of 30 mL. Such parameters lead to SWNT fractions in the films of approximately Phi = 1.8 x 10(-3), much below the metallic percolation threshold, which is found to be approximately PhiC = 5.5 x 10(-3). Therefore, the performance of transparent carbon nanotube thin-film transistors is limited by the metallic SWNTs, even below their percolation threshold. We show how this effect is related to hopping or tunneling between neighboring metallic tubes.     

Observation of breathing-like modes in an individual multiwalled carbon nanotube

We study collective vibrational breathing modes in the Raman spectrum of a multiwalled carbon nanotube. In correlation with high-resolution transmission electron microscopy, we find that these modes have energies differing by more than 23% from the radial breathing modes of the corresponding single-walled nanotubes. This shift in energy is explained with intershell interactions using a model of coupled harmonic oscillators. The strength of this interaction is related to the coupling strength expected for few-layer graphene.     

Resonant Raman spectroscopy of individual strained single-wall carbon nanotubes

Resonance Raman spectra of individual strained ultralong single-wall carbon nanotubes (SWNTs) are studied. Torsional and uniaxial strains are introduced by atomic force microscopy manipulation. Torsional strain strongly affects the Raman spectra, inducing a large downshift in the E2 symmetry mode in the G+ band, but a slight upshift for the rest of the G modes and also an upshift in the radial breathing mode (RBM). Whereas uniaxial strain has no effect on the frequency of either the E2 symmetry mode in the G+ band or the RBM, it downshifts the rest of the G modes. The Raman intensity change reflects the effect of these strains on the SWNT electronic band structure.     

Quantum conductance of a helically coiled carbon nanotube

Using a π-orbital tight-binding model, we investigate the transport properties of a coiled carbon nanotube (also called carbon nanotube spring), which we construct by connecting carbon nanotubes periodically in three-dimensional (3D) space. The conductance is quantized due to the translational symmetry in the coiled direction. However, the conductance behaviors differ greatly from those of pristine metallic carbon nanotubes but similar to those of carbon nanotube superlattices. We explain that conductance behaviors of the coiled carbon nanotube.     

Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes

We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g., Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.     

Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films

We report on electrical Raman measurements in transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external voltage results in downshifts of the D and G modes and in reduction of their intensity. The intensities of the radial breathing modes increase with external electric field related to the application of the external voltage in metallic SWNTs, while decreasing in semiconducting SWNTs. A model explaining the phenomenon in terms of both direct and indirect (Joule heating) effects of the field is proposed. Our work rules out the elimination of large amounts of metallic SWNTs in thin film transistors using high field pulses. Our results support the existence of Kohn anomalies in the Raman-active optical branches of metallic graphitic materials.     

Molecular design of strong single-wall carbon nanotube/polyelectrolyte multilayer composites

The mechanical failure of hybrid materials made from polymers and single-wall carbon nanotubes (SWNT) is primarily attributed to poor matrix-SWNT connectivity and severe phase segregation. Both problems can be successfully mitigated when the SWNT composite is made following the protocol of layer-by-layer assembly. This deposition technique prevents phase segregation of the polymer/SWNT binary system, and after subsequent crosslinking, the nanometre-scale uniform composite with SWNT loading as high as 50 wt% can be obtained. The free-standing SWNT/polyelectrolyte membranes delaminated from the substrate were found to be exceptionally strong with a tensile strength approaching that of hard ceramics. Because of the lightweight nature of SWNT composites, the prepared free-standing membranes can serve as components for a variety of long-lifetime devices.     

Temperature dependence of electron-to-lattice energy transfer in single-wall carbon nanotube bundles

The electron-phonon coupling strength in single-wall carbon nanotube (SWNT) bundles has been studied directly in the time domain by femtosecond time-resolved photoelectron spectroscopy. We have measured the dependence of H(Te, Tl), the rate of energy transfer between the electronic system and the lattice as a function of electron and lattice temperatures Te and Tl. The experiments are consistent with a T5 dependence of H on the electron and lattice temperatures, respectively. The results can be related to the e-ph mass enhancement parameter lambda. The experimentally obtained value of for lambda/[symbol: see text] D2, where [symbol: see text] D is the Debye temperature, suggests that e-ph scattering times at the Fermi level of SWNT bundles can be exceptionally long, exceeding 1.5 ps at room temperature.     

单壁碳纳米管无纺布/环氧树脂复合材料的电磁屏蔽性能

采用一种导电材料预制体-单壁碳纳米管(Single-wall carbon nanotube,SWCNT)无纺布与环氧树脂复合制备了电磁屏蔽复合材料,并对所制复合材料的电磁屏蔽性能进行了表征。结果表明:所制复合材料对电磁波的屏蔽效率随SWCNT无纺布厚度的增加而增加。在较低的SWCNT无纺布填加量下所制复合材料可以实现对低频电磁波较高的屏蔽效率。不同于填加粉体导电材料所制电磁屏蔽复合材料,作为导电材料预制体使用的SWCNT无纺布是一个独立的整体导电薄膜,可以直接引入到基体当中,不存在分散问题。并且通过简单的导电预制体多层叠加的方式即可实现复合材料更高的屏蔽效率。     

A parametric study of single-wall carbon nanotube growth by laser ablation

Results of a parametric study of carbon nanotube production by the double-pulse laser oven process are presented. The effect of various operating parameters on the production of single-wall carbon nanotubes (SWCNTs) is estimated by characterizing the nanotube material using analytical techniques, including scanning electron microscopy, transmission electron microscopy, thermo gravimetric analysis and Raman spectroscopy. The study included changing the sequence of the laser pulses, laser energy, pulse separation, type of buffer gas used, operating pressure, flow rate, inner tube diameter, as well as its material, and oven temperature. It was found that the material quality and quantity improve with deviation from normal operation parameters such as laser energy density higher than 1.5 J/cm2, pressure lower than 67 kPa, and flow rates higher than 100 sccm. Use of helium produced mainly small diameter tubes and a lower yield. The diameter of SWCNTs decreases with decreasing oven temperature and lower flow rates.     

Microfabrication and characterization of spray-coated single-wall carbon nanotube film strain gauges

We present the design, fabrication, and characterization results of single-wall carbon nanotube (SWCNT) film strain gauges for potential applications as highly sensitive strain, weight, or pressure sensors on the macro-scale. A batch microfabrication process was developed for practical device construction and packaging using spray-coated SWCNTs and a conventional semiconductor process. The prototype was characterized using a commercial metal foil gauge with tensile and compressive testing on a binocular load cell. Our test results demonstrated that the proposed SWCNT film gauges have a linear relationship between resistance changes and externally applied strain. The gauge factor ranged from 7.0 to 16.4 for four different micro-grid configurations, indicating that the maximum strain sensitivity of the prototype was approximately eight times greater than that of commercial gauges.