BiCMOS tunable membership function circuits

An MOS transconductance amplifier and bipolar current gain cell structure were investigated. The large input voltage range of the MOS transconductance is preserved, while the gain in the bipolar cell is linearly current controlled. These features make the structure suitable for tunable membership function circuits (MFCs) in a fuzzy controller. Both current-output and voltage-output configurations are proposed.     

A very high-frequency CMOS complementary folded cascode amplifier

A wide-band, fast settling CMOS complementary folded cascode (CFC) transconductance amplifier for use in analog VLSI high frequency signal processing applications is introduced. The superior performance of the CFC architecture over that of the folder cascode (FC) or mirrored cascode (MC) approaches for VLSI amplifiers is demonstrated. The symmetrically configured complementary input stage provides a wide common-mode input voltage range. The amplifier performs as an operational transconductance amplifier (OTA) and displays a first-order dominant pole when loaded by a shunt capacitor. The transconductance amplifier is small in area (0.016 mm²), and well suited for high frequency analog signal processing applications. Simulation and experimental results demonstrate a DC gain of approximately 50 dB, with a 0.1% settling response of under 10 ns for loads varied from 0 to 2 pF     

A Current-Feedback Instrumentation Amplifier With 5 $mu{hbox{V}}$ Offset for Bidirectional High-Side Current-Sensing

This paper describes an instrumentation amplifier for bidirectional high-side current-sensing applications. It uses a multipath indirect current-feedback topology. To achieve low offset, the amplifier employs a combination of chopping and auto-zeroing in a low frequency path to cancel the offset of a wide-band amplifier in a high frequency path. With a 60 kHz chopper clock and a 30 kHz auto-zero clock, this offset-stabilization scheme results in an offset voltage of less than 5 $mu{hbox{V}}$ , a CMRR of 143 dB and a common-mode input voltage range from 1.9 to 30 V. The input voltage-to-current (V-I) converters required by the current-feedback topology are implemented with composite transistors, whose transconductance is determined by laser-trimmed resistors. This results in a less than 0.1% gain inaccuracy. The instrumentation amplifier was realized in a 0.8 $mu{hbox{m}}$ BiCMOS process with high voltage transistors, and has an effective chip area of 2.5 ${hbox{mm}}^{2}$ .      

A Tunable Pseudo-Differential OTA With $-78~{hbox {dB}}$ THD Consuming 1.25 mW

A novel linear tunable transconductor based on a combination of linearization techniques is presented. The input signal is transferred to the V-I conversion element by means of a high-speed feedback loop. Then, the linear V-I conversion is accomplished using quasi-floating-gate MOS transistors biased in the triode region. Finally, the absence of current mirrors in the signal path provides low sensitivity to transistor mismatch and reduces the harmonic distortion. The operational transconductance amplifier (OTA) was fabricated in a 0.5-mum CMOS technology with a single 3.3-V supply voltage. Experimental results show a total harmonic distortion of -78 dB at 1 MHz with 1-V_pp input signal. High linearity of the OTA is obtained over a two octave tuning range with only 1.25-mW power consumption.     

Large Dynamic Range High Frequency Fully Differential CMOS Transconductance Amplifier

A large dynamic range high frequency fully differential CMOS transconductance amplifier is introduced. It is based on the linear transconductance element proposed in [8] combined with the common-mode feedback circuit in [9]. The original transconductance and common-mode circuits which use two supply voltages are modified for operation under a single power supply. The performance of the complete transconductance amplifier is analysed in details. Simulation results of the whole circuit are also presented, which show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 V _pk–pk differential input signal, and dynamic range in excess of 70 dB can be achieved for the fully differential transconductance amplifier.     

Wide-Linear-Range Subthreshold OTA for Low-Power, Low-Voltage, and Low-Frequency Applications

We propose a novel configuration of linearized subthreshold operational transconductance amplifier (OTA) for low-power, low-voltage, and low-frequency applications. By using multiple input floating-gate (MIFG) MOS devices and implementing a cubic-distortion-term-canceling technique, the linear range of the OTA is up to 1.1 Vpp under a 1.5-V supply for less than 1% of transconductance variation, according to testing results from a circuit designed in a double-poly, 0.8-$muhbox m$, CMOS process. The power consumption of the OTA remains below 1$muW$for biasing currents in the range between 1–200 nA. The offset voltage due to secondary effects (contributed by parasitic capacitances, errors and mismatches of parameters, charge entrapment, etc.) is of the order of a few ten millivolts, and can be canceled by adjusting biasing voltages of input MIFG MOS transistors.     

A High-Frequency Transconductor Using a Robust Nonlinearity Cancellation

This brief deals with the design of a linear operational transconductance amplifier (OTA) intended for high-frequency continuous-time filters. Three source-degenerated differential pairs are used to reduce the third-order distortion components regardless of process parameter tolerances and bias current. Experimental results for an OTA fabricated in the TSMC 0.35-$muhboxm$CMOS process are presented and compared with recently reported topologies. Draining 2.8 mA from a single supply voltage of 3.3 V, the transconductor achieves$hboxIM3≪-70~hboxdB$for a two-tone input signal of 1.3 Vpp measured at 70 MHz. The input referred noise density is only 7$~hboxnV/surdhboxHz$, leading to an SNR of 75 dB.     

Robust highly linear high-frequency CMOS OTA with IM3 below - 70 dB at 26 MHz

An enhanced configuration for a linearized MOS operational transconductance amplifier (OTA) is proposed. The proposed fully differential OTA circuit is based on resistive source degeneration and an improved adaptive biasing technique. It is robust to process variation, which has not been fully shown in previously reported linearization techniques. Detailed harmonic distortion analysis demonstrating the robustness of the proposed OTA is introduced. The transconductance gain is tunable from 160 to 340 /spl mu/S with a third-order intermodulation (IM3) below -70 dB at 26 MHz. As an application, a 26-MHz second-order low-pass filter fabricated in TSMC 0.35-/spl mu/m CMOS technology with a power supply of 3.3 V is presented. The measured IM3 with an input voltage of 1.4 Vpp is below - 65 dB for the entire filter pass-band, and the input referred noise density is 156nV//spl radic/Hz. The cutoff frequency of the filter is tunable in the range of 13-26 MHz. Theoretical and experimental results are in good agreement.     

A field programmable analog array for CMOS continuous-time OTA-Cfilter applications

A programmable high-frequency operational transconductance amplifier (OTA) is proposed and analyzed. A general configurable analog block (CAB) is presented, which consists of the proposed programmable OTA, programmable capacitor and MOSFET switches. Using the CABs, the universal tunable and field programmable analog array (FPAA) can be constructed, which can realize many signal-processing functions, including filters. A tuning circuit is also discussed. The proposed OTA has been simulated and fabricated in CMOS technology. The results show that the OTA has the transconductance tunable/programmable in a wide range of 700 times and the -3-dB bandwidth larger than 20 MHz. A universal 5×8 CAB array has been fabricated. The chip has also been configured to realize OTA-C 60-kHz and 500-kHz bandpass filters based on ladder simulation and biquad cascade     

下截止频率1.3～244Hz可调带通VGA设计

采用电压控制的伪电阻结构,设计了一款具有超低频下截止频率调节功能的带通可变增益放大器(VGA),由于该结构具有可调节超大的等效电阻和反馈电容使VGA的下截止频率可以调节.提出了一种改进的甲乙类运算跨导放大器(OTA)结构,采用新颖的浮动偏置设计,在满足高压摆率的条件下,有效提高共源共栅结构的电压输出范围.将伪电阻用于OTA的共模反馈,克服了阻性共模检测结构负载效应的问题.该VGA电路采用TSMC 0.18 μm标准工艺设计和流片,测试结果表明,1.2V电源电压下,其下截止频率调节范围为1.3～ 244 Hz,增益为49.2,44.2,39.2 dB,带宽为3.4,3.9,4.4 kHz,消耗电流为3.9 μA,共模抑制比达75.2 dB.     

CMOS linear programmable transconductor suitable for adjustable Gm-C filters

A novel CMOS linear programmable transconductor is presented. It is based on a telescopic cascode operational transconductance amplifier with source degeneration implemented by means of highly linear tunable active resistors. The transconductor has been designed in a 0.5 mum CMOS technology featuring a third-order intermodulation (IM3) of -54.8 dB at 10 MHz for a 1 V_pp output voltage. Its feasibility for Gm-C filter design has been experimentally validated with a 1 MHz tunable third-order Chebyshev lowpass filter suitable for Bluetooth applications.     

二极管型非制冷红外探测器的前端电路设计

设计了一种二极管型非制冷红外探测器的前端电路,该电路采用Gm-C-OP积分放大器的结构,将探测器输出的微弱电压信号经跨导放大器(OTA)转化为电流信号,再经电容反馈跨阻放大器(CTIA)积分转化为电压信号输出。该OTA采用电流反馈型结构,可以获得比传统OTA更高的线性度和跨导值。输入采用差分结构,可以有效地消除环境温度及制造工艺对探测器输出信号的影响。电路采用0.35 m CMOS工艺进行设计并流片,5 V电源电压供电。Gm-C-OP积分放大器总面积0.012 6 mm2,当输入差分电压为0~5 mV时,测试结果表明:OTA跨导值与仿真结果保持一致,Gm-C-OP积分放大器可实现对动态输入差分信号到输出电压的线性转化,线性度达97%,输出范围大于2 V。     

Compact sub-hertz OTA-C filter design with interface-trap charge pump

Single-ended and differential operational transconductance amplifier (OTA) configurations are biased with MOSFET interface-trap charge-pumping (ITCP) current generators to achieve very low transconductances for tunable sub-hertz operational transconductance amplifier-capacitor (OTA-C) filter implementation. This paper reviews the basics of ITCP current generation and presents the transconductors and the OTA-C filter configurations based on these transconductors. One of the filters is a low-pass with an experimentally determined lowest cutoff frequency of 0.18 Hz, and the other is a fully differential bandpass with individually tunable lower and upper cutoff frequencies measured down to 0.3 Hz. The former has one 15-pF filter capacitor, and measures 0.0346 mm/sup 2/, whereas the latter contains four such capacitors and occupies 0.188 mm/sup 2/ silicon. Experimental evaluation also includes offset, harmonic distortion, and noise performance.     

A 1-V 450-nW Fully Integrated Programmable Biomedical Sensor Interface Chip

This paper presents a fully integrated programmable biomedical sensor interface chip dedicated to the processing of various types of biomedical signals. The chip, optimized for high power efficiency, contains a low noise amplifier, a tunable bandpass filter, a programmable gain stage, and a successive approximation register analog-to-digital converter. A novel balanced tunable pseudo-resistor is proposed to achieve low signal distortion and high dynamic range under low voltage operations. A 53 nW, 30 kHz relaxation oscillator is included on-chip for low power consumption and full integration. The design was fabricated in a 0.35$ mu{hbox {m}}$ standard CMOS process and tested at 1$~$V supply. The analog front-end has measured frequency response from 4.5 mHz to 292 Hz, programmable gains from 45.6 dB to 60$~$ dB, input referred noise of 2.5$ muhbox{V}_{rm rms}$ in the amplifier bandwidth, a noise efficiency factor (NEF) of 3.26, and a low distortion of less than 0.6% with full voltage swing at the ADC input. The system consumes 445 nA in the 31 Hz narrowband mode for heart rate detection and 895 nA in the 292 Hz wideband mode for ECG recording.      

Low-Power Tunable Analog Circuit Blocks Based on Nanoscale Double-Gate MOSFETs

We illustrate unique examples of low-power tunable analog circuits built using independently driven nanoscale DG-MOSFETs, where the top gate response is altered by application of a control voltage on the bottom gate. In particular, we provide examples for a single-ended CMOS amplifier pair, a Schmitt trigger circuit and a operational transconductance amplifier C filter, circuit blocks essential for low-noise high-performance integrated circuits for analog and mixed-signal applications. The topologies and biasing schemes explored here show how the nanoscale DG-MOSFETs may be used for efficient, tolerant and smaller circuits with tunable characteristics.     

A highly linear bulk-driven CMOS OTA for continuous-time filters

In this paper we present a bulk-driven CMOS triode-based fully balanced operational transconductance amplifier (OTA) and its application to continuous-time filters. The proposed OTA is linearly tunable with the feature of low distortion and high output impedance. It can achieve wide input range without compromising large transconductance tuning interval. Using a 0.18 μm n-well CMOS process, we have implemented a third-order elliptic low-pass filter based on the proposed OTA. Both the simulation and measurement results are reported. The total harmonic distortion is more than −45 dB for fully differential input signals of up to 0.8 V peak–peak voltage. A dynamic range of 45 dB is obtained under the OTA noise integrated over 1 MHz.     

Low-Voltage Linearly Tunable CMOS Transconductor With Common-Mode Feedforward

This paper presents a new low-voltage pseudodifferential continuous-time CMOS transconductor for wide-band applications. The proposed cell is based on a feedforward cancellation of the input common-mode signal and keeps the input common mode voltage constant, while the transconductance is easily tunable through a continuous bias voltage. Linearity is preserved during the tuning process for a moderate range of transconductance values. Measurements results for a 0.35-m CMOS design show a 1:2 tuning range with total harmonic distortion figures at 10 MHz below 58 dB over the whole range up to a 200- differential output current. The proposed cell consumes less than 1.1 mW from a single 1.8-V supply.     

Three-gate MOSFET Providing independent control of transconductance and output resistance

A three-gate MOS transistor is demonstrated. Measurements of operating characteristics illustrate the availability of excellent control of the transconductance while simultaneously maintaining very high output resistance. In analog circuit applications, the three-gate device provides additional advantages including better signal isolation, less nonlinearity, and adjustable mismatch in a differential amplifier. A range of operating voltages over which the transconductance is constant is observed.     

A Wide Tuning-Range CMOS VCO With a Differential Tunable Active Inductor

By utilizing a differential tunable active inductor for the LC-tank, a wide tuning-range CMOS voltage-controlled oscillator (VCO) is presented. In the proposed circuit topology, the coarse frequency tuning is achieved by the tunable active inductor, while the fine tuning is controlled by the varactor. Using a 0.18-$muhbox m$CMOS process, a prototype VCO is implemented for demonstration. The fabricated circuit provides an output frequency from 500 MHz to 3.0 GHz, resulting in a tuning range of 143% at radio frequencies. The measured phase noise is from$-$101 to$-$118 dBc/Hz at a 1-MHz offset within the entire frequency range. Due to the absence of the spiral inductors, the fully integrated VCO occupies an active area of$hbox 150times hbox 300 muhbox m^2$.     

一种宽带恒定跨导轨对轨运算放大器的设计

介绍了一种具有轨对轨输入功能的CMOS输入级电路。该电路克服了一般运算放大器只能工作在一定共模输入范围的输入级的缺陷，在各种共模输入电平下有着几乎恒定的跨导，使频率补偿更容易实现，且由于其工作原理与MOS晶体管的C—V解析关系无关，对制造工艺依赖性小，适用于深亚微米工艺。在此基础上，设计出了一种宽带的运算放大器，该运算放大器具有轨对轨输入、输出能力，可以作为常用模拟电路的基本单元模块。它没有严格的共模输入限制，跨导和整体性能稳定，适于为更大规模的数字／模拟混合信号系统提供行为级模型。