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1.
The effects of substituting Nb5+ with Ta5+ on the microwave dielectric properties of the ZnNb2 O6 ceramics were investigated in this study. The forming of Zn(Nb1− x Ta x )2 O6 ( x =0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. By increasing x , not only could the Q × f of the Zn(Nb1− x Ta x )2 O6 ( x =0–0.09) solid solution be tremendously boosted from 83 600 GHz at x =0 to a maximum 152 000 GHz at x =0.05, the highest ɛr ∼24.6 could also be achieved simultaneously. It was mainly due to the uniform grain morphology and the highest relative density of the specimen. A fine combination of microwave dielectric properties (ɛr ∼24.6, Q × f ∼152 000 GHz at 8.83 GHz, τf ∼–71.1 ppm/°C) was achieved for Zn(Nb0.95 Ta0.05 )2 O6 solid solution sintered at 1175°C for 2 h. 相似文献
2.
In this article, the first part of a two-part study, we report the reaction path and microstructure evolution during the reactive hot isostatic pressing of Ti3 SiC2 , starting with titanium, SiC, and graphite powders. A series of interrupted hot isostatic press runs have been conducted as a function of temperature (1200°–1600°C) and time (0–24 h). Based on X-ray diffractometry and scanning electron microscopy, at 1200°C, the intermediate phases are TiC x and Ti5 Si3 C x . Fully dense, essentially single-phase samples are fabricated in the 1450°–1700°C temperature range. The time-temperature processing envelope for fabricating microstructures with small (3–5 μm), large (∼200 μm), and duplex grains, in which large (100–200 μm) Ti3 SiC2 grains are embedded in a much finer matrix, is delineated. The microstructure evolution is, to a large extent, determined by (i) the presence of unreacted phases, mainly TiC x , which inhibits grain growth; (ii) a large anisotropy in growth rates along the c and a directions (at 1450°C, growth normal to the basal planes is about an order of magnitude smaller than that parallel to these planes; at 1600°C, the ratio is 4); and (iii) the impingement of grains. Ti3 SiC2 is thermally stable under vacuum and argon atmosphere at temperatures as high as 1600°C for as long as 24 h. The influence of grain size on the mechanical properties is discussed in the second part of this study. 相似文献
3.
Hwi-Yeol Park Joo-Young Choi Min-Kyu Choi Kyung-Hoon Cho Sahn Nahm Hyeung-Gyu Lee Hyung-Won Kang 《Journal of the American Ceramic Society》2008,91(7):2374-2377
When a small amount of CuO was added to (Na0.5 K0.5 )NbO3 (NKN) ceramics sintered at 960°C for 2 h, a dense microstructure with increased grains was developed, probably due to liquid-phase sintering. The Curie temperature slightly increased when CuO exceeded 1.5 mol%. The Cu2+ ion was considered to have replaced the Nb5+ ion and acted as a hardener, which increased the E c and Q m values of the NKN ceramics. High piezoelectric properties of k p =0.37, Q m =844, and ɛ3 T /ɛ0 =229 were obtained from the specimen containing 1.5 mol% of CuO sintered at 960°C for 2 h. 相似文献
4.
Yang Xiao Xiang Ming Chen Xiao Qiang Liu 《Journal of the American Ceramic Society》2004,87(11):2143-2146
CaRAlO4 (R = Nd, Sm, Y) ceramics with a K2 NiF4 structure were prepared by a solid-state reaction approach, and their microwave dielectric characteristics were evaluated, along with their microstructures. Dense CaNdAlO4 , CaSmAlO4 , and CaYAlO4 ceramics were obtained by sintering at 1425°–1500°C in air for 3 h, and good microwave dielectric characteristics were achieved: (1) ɛ= 18.2, Qf = 17 980 GHz, τf =−52 ppm/°C for CaNdAlO4 ; (2) ɛ= 18.2, Qf = 51 060 GHz, τf =−3 ppm/°C for CaSmAlO4 ; and (3) ɛ= 18.9, Qf = 39 960 GHz, τf = 6 ppm/°C for CaYAlO4 . 相似文献
5.
Hong Xia Yuan Xiang Ming Chen Min Min Mao 《Journal of the American Ceramic Society》2009,92(10):2286-2290
CaNdAlO4 microwave dielectric ceramics were modified by Ca/Ti co-substitution, and their dielectric characteristics were evaluated along with their structure and microstructures. Ca1+ x Nd1− x Al1− x Ti x O4 ( x =0, 0.025, 0.05, 0.10, 0.15, 0.20) ceramics with the relative density of over 95% theoretical density were obtained by sintering at 1400°–1450°C in air for 3 h, where the K2 NiF4 -type solid solution single phase was determined from the compositions of x <0.20, while a small amount of CaTiO3 secondary phase was detected for x =0.20. With Ca/Ti co-substitution in CaNdAlO4 ceramics, the dielectric constant (ɛr ) increased with increasing x , and the temperature coefficient of resonant frequency (τf ) was adjusted from negative to positive, while the Q × f 0 value increased significantly at first and reached an extreme value at x =0.025 and the maximum at x =0.15. The best combination of microwave dielectric characteristics were achieved at x =0.15 (ɛr =19.5, Q × f 0 =93 400 GHz, τf =−2 ppm/°C). The improvement of the Q × f 0 value primarily originated from the reduced interlayer polarization with Ca/Ti co-substitution, while the decreased tolerance factor, the subsequent increased interlayer stress, and the appearance of CaTiO3 secondary phase brought negative effects upon the Q × f 0 value. 相似文献
6.
Synthesis of BaCu(B2 O5 ) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3 Nb2/3 )O3 Ceramics 总被引:1,自引:0,他引:1
Min-Han Kim Jong-Bong Lim Jae-Chul Kim Sahn Nahm Jong-Hoo Paik Jong-Hee Kim Kyeong-Soon Park 《Journal of the American Ceramic Society》2006,89(10):3124-3128
BaCu(B2 O5 ) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B2 O5 ) phase was formed at 700°C and melted above 850°C. The BaCu(B2 O5 ) ceramic sintered at 810°C had a dielectric constant (ɛr ) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τf ) of −32 ppm/°C. As the BaCu(B2 O5 ) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B2 O5 ) was added to the Ba(Zn1/3 Nb2/3 )O3 (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B2 O5 ) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛr =35, and τf =22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B2 O5 ) ceramic sintered at 875°C for 2 h. 相似文献
7.
The hexagonal perovskite, Ba8 ZnTa6 O24 , was prepared in single-phase form and was found to be a stable secondary phase, formed as a result of the loss of ZnO from Ba(Zn1/3 Ta2/3 )O3 microwave dielectrics. The experimental and calculated X-ray patterns of Ba8 ZnTa6 O24 indicate it is isostructural with Ba8 Ta6 NiO24 with an 8H (cchc)2 close-packed BaO3 stacking sequence and the lattice parameters, a =10.0825(14), c =19.0587(38)Å. High-density ceramics of Ba8 ZnTa6 O24 could be prepared at temperatures considerably lower (1400°C) than those used to sinter pure Ba(Zn1/3 Ta2/3 )O3 , and exhibit very good microwave dielectric properties with ɛ=30.5, Q f =62 300, and τf =+36 ppm/°C at 8.9 GHz. 相似文献
8.
Myung-Eun Song Jin-Seong Kim Mi-Ri Joung Sahn Nahm Young-Sik Kim Jong-Hoo Paik Byung-Hyun Choi 《Journal of the American Ceramic Society》2008,91(8):2747-2750
MgSiO3 ceramics were synthesized and their microwave dielectric properties were investigated. The Mg2 SiO4 phase was formed at temperatures lower than 1200°C, while the orthorhombic MgSiO3 phase started to form by the reaction of SiO2 and Mg2 SiO4 in the specimen fired at 1200°C. The structure of the MgSiO3 ceramics was transformed from orthorhombic to monoclinic when the sintering temperature exceeded 1400°C. A dense microstructure was developed for the specimens sintered at above 1350°C. The excellent microwave dielectric properties of ɛr =6.7, Q × f =121 200 GHz, and τf =−17 ppm/°C were obtained from the MgSiO3 ceramics sintered at 1380°C for 13 h. 相似文献
9.
The electrical properties of Sr0.5 Ba0.3 TiO3 in the presence of Nb2 O5 as a donor, 3Li2 O · 2SiO2 as a sintering agent, and Bi2 O3 as a dopant have been studied. When the compositions of the ceramics were 1 mol Sr0.7 Ba0.3 TiO3 + 0.5 mol% Nb2 O5 + 2 mol% 3Li2 O · 2SiO2 + 0.2 mol% Bi2 O3 , the ceramics were sintered at 1100°C and exhibited the following characteristics: apparent dielectric constant ɛ, 25000; loss factor tan δ, 2%; insulating resistivity ρj , 1010 Ω· cm; variation of dielectric constant with temperature Δɛ/ɛ (−25° to +85°C), +10%, −14%. ɛ and tan δ show only small changes with frequency. The study shows this ceramic can be used in multilayer technology. 相似文献
10.
The BiVO4 additive was found effective for low-temperature firing of ZnNb2 O6 polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO4 -doped ZnNb2 O6 samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q · f = 55000 GHz, ɛr = 26, and τf =−57 ppm/°C. With increasing BiVO4 addition up to 20 mol% relative to ZnNb2 O6 , while the quality factor Q · f was gradually decreased, the relative dielectric constant, ɛr , was linearly increased and the temperature coefficient of resonant frequency, τf , was slightly increased. The variations in Q · f and ɛr are surely attributable to the residual BiVO4 in the ZnNb2 O6 matrix. An unexpected slight increase in τf is probably due to the formation of the Bi(V,Nb)O4 -type solid solution. 相似文献
11.
Guttamindapalli A. Ravi Feridoon Azough Robert Freer Robert J. Cernik Anthony M. T. Bell 《Journal of the American Ceramic Society》2007,90(12):3947-3952
Mixed-oxide prepared Ca0.7 Ti0.7 La0.3 Al0.3 O3 (CTLA) ceramics (≈96% dense), grain size 6–7 μm, with dielectric properties (at 4 GHz) of ɛr ≈46, Q × f ≈38 000 GHz, and τf +13 ppm/°C, were studied at 25°–1300°C using synchrotron X-ray powder diffraction. At room temperature, CTLA exhibits a distorted orthorhombic structure, with two tilt systems: a =5.40383 (4) Å, b =5.41106 (6) Å, and c =7.64114 (7) Å with space group Pbnm . At 1050°±25°C, there is a transition from orthorhombic ( Pbnm ) to tetragonal ( I 4/ mcm ), with a simpler tilt arrangement. The lattice parameters at 1100°C were: a =5.44285 (4) Å and c =7.68913 (8) Å. 相似文献
12.
Liang Fang Hui Zhang Qian Yu Heping Su Bolin Wu Xueming Cui 《Journal of the American Ceramic Society》2009,92(2):556-558
The microwave dielectric properties of dense ceramics of a new A4 B3 O12 type cation-deficient hexagonal perovskite Sr3 LaNb3 O12 are reported. Single-phase powders can be obtained from the mixed-oxide route at 1320°C and dense ceramics (>96% of the theoretical X-ray density) with uniform microstructures (5–12 um) can be obtained by sintering in air at 1430°C. The ceramic exhibits a moderate dielectric constant ɛr ∼36, a high quality factor Q × f ∼45 327 GHz, and a low temperature coefficient of resonant frequency τ f of −9 ppm/°C. 相似文献
13.
14.
A type of new low sintering temperature ceramic, Li2 TiO3 ceramic, has been found. Although it is difficult for the Li2 TiO3 compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li2 O, dense Li2 TiO3 ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B2 O3 frit. The sintering behavior and microwave dielectric properties of Li2 TiO3 ceramics with less ZnO–B2 O3 frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B2 O3 frit can lower the sintering temperature of the Li2 TiO3 ceramics, but it does not apparently degrade the microwave dielectric properties of the Li2 TiO3 ceramics. Typically, the good microwave dielectric properties of ɛr =23.06, Q × f =32 275 GHz, τf = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B2 O3 frit-doped Li2 TiO3 ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li2 TiO3 ceramic system may be a promising candidate for low-temperature cofired ceramics applications. 相似文献
15.
Hwi-Yeol Park In-Tae Seo Jae-Hong Choi Sahn Nahm Hyeung-Gyu Lee 《Journal of the American Ceramic Society》2010,93(1):36-39
(Na0.5 K0.5 )NbO3 (NKN) ceramic with 1.5 mol% CuO added (NKNC) was well sintered even at a low temperature of 900°C with the addition of ZnO. Most of the ZnO reacted with the CuO and formed the liquid phase that assisted the densification of the specimens at 900°C. A few Zn2+ ions entered the matrix of the specimens and increased the coercive field ( E c ) and Q m values of the specimens. High-piezoelectric properties of k p =0.37, Q m =755, and ɛ3 T /ɛ0 =327 were obtained from the NKNC ceramics containing 1.0 mol% ZnO sintered at 900°C for 2 h. 相似文献
16.
Mi-Ri Joung Jin-Seong Kim Myung-Eun Song Sahn Nahm Jong-Hoo Paik Byung-Hyun Choi 《Journal of the American Ceramic Society》2009,92(7):1621-1624
The formation process and microwave dielectric properties of the Mg2 V2 O7 ceramics were investigated. The MgV2 O6 phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg2 V2 O7 phase. Finally, this monoclinic Mg2 V2 O7 phase was changed to a triclinic Mg2 V2 O7 phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg2 V2 O7 ceramics. In particular, the Mg2 V2 O7 ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛr =10.5, Q × f =58 275 GHz, and τf =−26.9 ppm/°C. 相似文献
17.
Sumesh George Prabhakaran Sreekumari Anjana Vasudevan Nair Deepu Pezholil Mohanan Mailadil Thomas Sebastian 《Journal of the American Ceramic Society》2009,92(6):1244-1249
Development of a low-temperature sintered dielectric material derived from Li2 MgSiO4 (LMS) for low-temperature cofired ceramic (LTCC) application is discussed in this paper. The LMS ceramics were prepared by the solid-state ceramic route. The calcination and sintering temperatures of LMS were optimized at 850°C/4 h and 1250°C/2 h, respectively, for the best density and dielectric properties. The crystal structure and microstructure of the ceramic were studied by the X-ray diffraction and scanning electron microscopic methods. The microwave dielectric properties of the ceramic were measured by the cavity perturbation method. The LMS sintered at 1250°C/2 h had ɛr =5.1 and tan δ=5.2 × 10−4 at 8 GHz. The sintering temperature of LMS is lowered from 1250°C/2 h to 850°C/2 h by the addition of both lithium borosilicate (LBS) and lithium magnesium zinc borosilicate (LMZBS) glasses. LMS mixed with 1 wt% LBS sintered at 925°C/2 h had ɛr =5.5 and tan δ=7 × 10−5 at 8 GHz. Two weight percent LMZBS mixed with LMS sintered at 875°C/2 h had ɛr =5.9 and tan δ=6.7 × 10−5 at 8 GHz. 相似文献
18.
Low-loss ceramics having the chemical formula Mg2 (Ti1− x Sn x )O4 for x ranging from 0.01 to 0.09 have been prepared by the conventional mixed oxide route and their microwave dielectric properties have been investigated. X-ray powder diffraction patterns indicate the corundum-structured solid solutions for the prepared compounds. In addition, lattice parameters, which linearly increase from 8.4414 to 8.4441 Å with the rise of x from 0.01 to 0.09, also confirm the forming of solid solutions. By increasing x from 0.01 to 0.05, the Q × f of the specimen can be tremendously boosted from 173 000 GHz to a maximum 318 000 GHz. A fine combination of microwave dielectric properties (ɛr ∼15.57, Q × f ∼318 000 GHz at 10.8 GHz, τf ∼−45.1 ppm/°C) was achieved for Mg2 (Ti0.95 Sn0.05 )O4 ceramics sintered at 1390°C for 4 h. Ilmenite-structured Mg(Ti0.95 Sn0.05 )O3 (ɛr ∼16.67, Q × f ∼275 000 GHz at 10.3 GHz, τf ∼−53.2 ppm/°C) was detected as a second phase. The presence of the second phase, however, would cause no significant variation in the dielectric properties of the specimen, because the second phase properties are very similar to the primary phase. These unique properties, in particular, low ɛr and high Q × f , can be utilized as a very promising dielectric material for ultra-high-frequency applications. 相似文献
19.
Ritesh Rawal Antonio Feteira Neil C. Hyatt Derek C. Sinclair Kumaravinothan Sarma Neil McN. Alford 《Journal of the American Ceramic Society》2006,89(1):332-335
The dielectric properties of dense ceramics of the n =0 member of a newly identified homologous series Ba3+ n LaNb3 Ti n O12+3 n , where n =0, 1, and 2, are reported. Single-phase powders can be obtained from the mixed-oxide route at 1350°C and dense ceramics (>97% of the theoretical X-ray density) with uniform microstructures (3–5 μm) can be obtained by sintering in air at 1500°C. The ceramics are excellent dc insulators with a band gap >2.6 eV that resonate at microwave frequencies with a relative permittivity, ɛr ∼44, a quality factor, Q × f r , of ∼9000 at f r ∼5.5 GHz and a temperature coefficient of resonant frequency, TCf ,∼−100 ppm/K. 相似文献
20.
Kyoung R. Han Jin-Wook Jang Seo-Yong Cho Dae-Yong Jeong Kug-Sun Hong 《Journal of the American Ceramic Society》1998,81(5):1209-1214
Low-temperature-sinterable (Zr0.8 Sn0.2 )TiO4 powders were prepared using 3 mol% Zn(NO3 )2 additive and then compared with powders prepared using 3 mol% ZnO additive and no additives. Sintering at 1200°C for 2 h produced a dielectric ceramic with ρ= 98.6% of theoretical density (TD), ɛr = 38.4, Q × f (GHz) = 42000, and τ f =−1 ppm/°C. Sintering at 1250°C resulted in an excellent dielectric with ρ= 99% of TD, epsilonr = 40.9, Q × f (GHz) = 49000, and τ f =−2 ppm/°C. Scanning electron microscopy showed a microstructure with grains measuring 0.5 to 1 μm, and transmission electron microscopy revealed secondary phase in the grain boundaries. 相似文献