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1.
采用固相烧鲒法,以镧系元素La和Nd为掺杂离子,制备了不同掺杂量的SrBi4Ti4O15(SBTi)铁电陶瓷。X射线衍射谱显示样品呈随机取向的单一层状钙钛矿结构相。铁电测量显示适量的La和Nd掺杂使得SBTi的剩余极化(2P,)得到显著增加。对于SrBi4-xLaxTi4O15(SBLT—x),当x=0.25时,2P,达到极大值,为24.2μC/cm^2,对于SrBi4-yNdyTi4O15(SBNT—Y),当y=0.18时,2P,达到极大值,为25.8μC/cm^2,和未掺杂相比,分别增长近50%和56%。SBLT—x样品的矫顽场随掺杂量的增加而逐步减小,SBNT—Y的矫顽场在y=0.00到0.18之间几乎不变,在更大掺杂量下,随掺杂量的增加而逐步减小。掺杂引起材料中点缺陷浓度的降低和晶格畸变的减小,这两种因素的共同作用决定了刺余极化的变化。样品的变温介电谱显示,晶体的居里温度随掺杂量的增加而下降。在掺杂量大于0.75以后,SBLT—x和SBNT—y样品均出现驰豫铁电体的典型特征。  相似文献   

2.
在晶体缺陷的热平衡原理的基础上,通过计算体系的结合能解释了钙钛矿锰氧化物La0.7Sr0.3-xAgxMnO3的晶胞体积随掺杂量x的增加而增大的实验现象,以及样品的居里温度疋随掺杂量x的增加而降低的现象。  相似文献   

3.
La掺杂对Sr2Bi4Ti5O18铁电陶瓷性能的影响   总被引:4,自引:0,他引:4  
卢网平  朱骏  惠荣  陆文峰  陈小兵 《功能材料》2003,34(5):562-563,566
利用传统的固相烧结工艺制备了Sr2LaxBi1-xTi5O18(x=0.00、0.05、0.1、0.25、0.5、0.75、1.00)陶瓷样品。用X射线衍射对其微结构进行了分析.并测量了其铁电、介电性能。X射线衍射结果表明La掺杂对Sr2Bi4TixO18的晶体结构几乎没有影响。样品的铁电、介电结果表明。随着La掺杂量的增加,样品的剩余极化(2Pr)和矫颈场(Ec)逐渐减小。这是由于离子半径较大的La取代类钙钛矿层A位Bi离子。使得样品晶格畸变变小,从而导致2Pr降低。晶格畸变的减小也使得沿着外电场方向氧八面体中的阳离子更易运动。导致Ec减小。样品的相变温度L随着La含量的增加而降低。这也与样品晶格畸变有关。  相似文献   

4.
将Bi2O3掺杂到用溶胶—凝胶法制备的La0.6Sr0.33MnO3(LSMO)微粉中,XRD测量结果证实有过量的Bi析出。随着Bi掺杂量的增加,LSMO/(Bi2O3)x/2材料电阻率发生明显变化,在x=(0—0.10)摩尔比的掺杂范围内,电阻率先上升后突然下降。当X=0.1时,电阻率比未掺杂样品下降了一个数量级。Bi掺杂对低温和室温磁电阻有着完全不同的影响。低温下,随掺杂量增加,磁电阻下降;室温下Bi的微量掺杂可以使磁电阻增大,掺入x=0.03Bi使室温磁电阻由-4.4%提高到-5.6%。  相似文献   

5.
采用空气中固相反应烧结法制备了一系列钙钛矿结构的(La1-xREx)2/3Sr1/3MnO3(RE=Pr、Eu、Y、Tb;x=0、0.3或0.4)掺杂稀土锰氧化物多晶样品.X射线衍射(XRD)分析表明随着RE离子半径的减小,样品XRD的衍射峰位置普遍向高角度偏移,2θ增大0.02~0.62°.扫描电镜(SEM)观测的结果表明掺杂RE离子的半径越小,形成多晶样品的晶粒越小,未掺杂RE的La2/3Sr1/3MnO3在所有的样品中晶粒最大.红外吸收光谱测量发现样品在599~629cm-1范围出现了吸收峰并且峰的位置随掺杂RE离子半径的减小而向低频方向偏移.样品的磁性质测量表明掺杂稀土离子的半径及磁矩对材料的磁电阻有明显影响.  相似文献   

6.
通过粉末X射线衍射分析确定了钙钛矿氧化物La1-xSrxCoO3(0.1≤x≤0.5)体系的结构,由Ri-etveld方法拟合得到晶格参数随Sr掺杂量的变化.在80~300 K温度范围的直流电阻率测量表明,材料的电性质在x=0.2和x=0.3之间展示了从半导体到金属的相变.x=0.2样品已接近绝缘体-金属(I—M)相变的边缘.研究结果表明,La1-xSrxCoO3(0.1≤x≤0.5)体系的I-M相变不仅依赖于Sr浓度x,也依赖于样品的制备技术.  相似文献   

7.
研究了Sm2O3掺杂的bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xSmxZn0.5)(Zn0.5Nb1.5)O7(O≤x≤0.6,BSZN),的结构及介电性能.结果表明纯BZN陶瓷的结构为立方焦绿石单相;当Sm2O3掺杂量较少(O<x≤0.5)时,样品的相结构仍然保持立方焦绿石单相;随着Sm2O3掺杂量的进一步增加(x≥0.6),样品出现其它相.同时,试样的介电性能随结构的变化而呈现有规律的变化.  相似文献   

8.
采用溶胶-凝胶法成功制备了Bi1-xLaxFe0.99Nb0.01O3(x≤0.25)纳米颗粒样品,并研究了La和Nb共掺对BiFeO3样品的晶体结构、晶粒尺寸和磁学性质的影响.根据X射线衍射及Rietveld精修结果可知,所有样品都保持R3c空间结构,且Fe-O-Fe键角随着La掺杂量的增加而减小.XPS测试结果表明,La和少量Nb共掺不会引起样品中Fe3+和Fe2+含量的明显变化.磁性测量发现剩余磁化强度强烈依赖于La掺杂量x.La掺杂影响着反向旋转的FeO5八面体结构变化,而Nb离子掺杂会导致样品晶粒细化.共掺BiFeO3的磁性增强是两种影响机制协同作用的结果.  相似文献   

9.
用溶胶-凝胶法制备系列样品La0.8-xNdxNa0.2MnO3(x=0.00,0.05,0.10,0.15和0.20)钙钛矿锰氧化物.研究温度范围在240~340 K、外磁场0~1T下该系列样品的居里温度和磁熵变.发现样品的居里温度TC随x增加而减小,而且x=0.20、温度为295K时,最大磁熵变△SM为1.68 J/kg·K.实验结果表明钙钛矿锰氧化物La0.8-xNdxNa0.2MnO3有可能作为室温下的磁致冷材料的候选者.  相似文献   

10.
研究了La3+取代的(Bi1.5Zn0.5)(Ti1.5Nb0.5)O7基陶瓷(Bi1.5-xLaxZn0.5)(Ti1.5Nb0.5)O7(0.0≤x≤1 2,BLZNT)的结构与介电性能。采用传统的固相反应法制备了陶瓷样品,用XRD、SEM分析了样品的组织。在整个取代范围内,La3+取代的样品基本保持单一烧绿石相,稳定范围由容忍因子(RA/RB值)来确定;同时,随着La3+取代量的增加,晶胞常数先增后减。介电性能随结构变化而变化,其中介电性能为:ε=130~170,tanδ=~0.9×10-3(1MHz),并且掺杂La优化了BLZNT x样品高频端(>100kHz)的频谱特性。  相似文献   

11.
Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.  相似文献   

12.
We prepared weakly agglomerated powders of ZrO2-CeO2 and HfO2-CeO2 solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO2.  相似文献   

13.
Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·104 N/m2 and at a freon concentration of 0.25–0.8.  相似文献   

14.
15.
First-principles cluster calculations are reported of the local electronic structure of the three compounds: La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.  相似文献   

16.
A series of GRIN glass rods have been developed in Li2O-Na2O-Al2O3-TiO2-SiO2 systems. Negative radial refractive index profiles were generated by exchanging Na+ for Li+ ions in these glass rods. It has been observed that TiO2 plays a vital role in increase in the profile depth and maximum change in the refractive index because of its ambivalent nature. Change in the refractive index can be further increased by increasing the concentration of exchanging cation in the base glass.  相似文献   

17.
Single-phase 2122 samples of thallium and bismuth superconductors were made by the precursor matrix method. The thermopower of these samples was measured in the temperature range 250 K-T c . The thermopower was positive and decreased linearly with increasing temperature aboveT c (onset). The exponential enhancement of thermopower seen in the undoped and doped YBCO was not observed in these samples. The linear variation of thermopower can be explained on the basis of either a two-band model or a narrow band model.  相似文献   

18.
本文给出了 Si_2N_2O-Al_2O_3-La_2O_3和 Si_2N_2O-Al_2O_3-CaO 系统的亚固相图。实验结果表明:在 Si_2N_2O-Al_2O_3-CaO 系统中有一个未知结构的新化合物 CaO·Si_2N_2O,在3CaO·Si_2N_2O 和3CaO·Al_2O_3两化合物之间形成连续立方固溶体。而 Si_2N_2O-Al_2O_3-La_2O_3系统中则没有发现新化合物。在两个系统的富 Si_2N_2O区,过量的 Si_2N_2O 与 La_2O_3和 CaO 分别反应形成 Si_3N_4与 La_(10)[SiO_4]_(?)N_2(H-相)(和 CaSiO_3。所研究的这两个三元系统中,分别形成了如下几个四元相容性区。在 Si_2N_2O-Al_2O_3-La_2O_3系统内有:H-Si_3N_4-La_2O_3·Si_2N_2O-La_2O_3·Al_2O_3;H-Si_3N_4-La_2O_3·Al_2O_3-La_2O_3·11 Al_2O_3;H-Si_3N_4-La_2O_3·11 Al_2O_3-Al_2O_3;H-Si_3N_4-Al_2O_3-O′s.s;H-Si_3N_4-O′s.s-Si_2N_2O在 Si_2N_2O-Al_2O_3-CaO 系统内有:Si_3N_4-CaSiO_3-CaO·Si_2N_2O-3CaO·Al_2O_3;Si_3N_3-CaSiO_3-3CaO·Al_2O_3-2CaO·Al_2O_3·SiO_(?);Si_(?)N_(?)-CaSiO_3-2CaO·Al_2O_3·SiO_2-Al_2O_3;Si_3N_4-CaSiO_3-Al_2O_(?)-O′s.s;Si_3N_4-CaSiO_3-O′s.s-Si_(?)N_(?)O  相似文献   

19.
The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr2Si2-type phases CaPd2As2 and SrPd2As2 in comparison with the non-superconducting CeMg2Si2-type phase BaPd2As2. Besides, the same properties were compared for CeMg2Si2- and ThCr2Si2-type polymorphs of BaPd2As2. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd2As2] with decisive contributions of Pd 4d states. The values of N(E F) increase in the sequence: CaPd2As2 < SrPd2As2 < BaPd2As2, i.e. in the reverse sequence relative to the transition temperatures T C. Thus, the change in T C cannot be explained by the electronic factor, i.e. by the simple correlation T CN(E F). Most likely the decrease in T C in the sequence CaPd2As2 → SrPd2As2 and the absence of a superconducting transition in BaPd2As2 are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.  相似文献   

20.
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