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1.
The formation of the columbite-structure magnesium niobate MgNb2O6 is a multistep process. Single-phase material can only be obtained through long-term high-temperature heat treatment. Deviations from stoichiometry have a significant effect on the microwave quality factor Q of the material: magnesium-deficient ceramics contain small amounts of Nb2O5 and have relatively low Q values, whereas an excess of magnesium leads to the formation of Mg4Nb2O9 (alpha-alumina structure) as an impurity phase, thereby drastically increasing the electrical Q.  相似文献   

2.
A new series of solid solutions Y2W3−x Mo x O12 (0.5 ≤ x ≤ 2.5) were successfully synthesized by the solid state method. Their crystal structure and negative thermal expansion properties were studied using high-temperature X-ray powder diffraction and the Rietveld method. All samples of rare earth tungstates and molybdates were found to crystallize in the same orthorhombic structure with space group Pnca, and show the negative thermal expansion phenomena related to transverse vibration of bridging oxygen atoms in the structure. Thermal expansion coefficients (TEC) of Y2W3−x Mo x O12 were determined as −16.2 × 10−6 K−1 for x = 0.5 and −16.5 × 10−6 K−1 for x = 2.5 in the identical temperature range of 200–800 °C. High-temperature XRD data and bond length analysis suggest that the difference between W–O and Mo–O bond is responsible for the change of TECs after the element substitution in this series of solid solutions.  相似文献   

3.
In this paper, we characterized the microstructure and superconducting properties of Cu-doped NiBi3 samples. The polycrystalline Ni1?x Cu x Bi3 (0 ≤ x ≤ 0.10) samples were prepared using a solid-state reaction method. The crystal structure and unit cell parameters were determined by Rietveld refinement of powder X-ray diffraction. The data showed that the main phase present corresponded to NiBi3 without dependence on the Cu concentration, but with small quantities of Ni and Bi. The SEM and AFM measurements revealed that the main phase was inhomogeneous at microscopic level, with Bi richer regions in comparison to other regions. However, Raman spectroscopy results did not show significant changes in the spectra with Cu doping and in different regions of the samples. Another finding was that regardless of Cu doping, the superconducting transition temperature was 4.05–4.06 K.  相似文献   

4.
We have synthesized SrFe1 ? x M x O3 ? z (M = Mo, W; 0 < x ≤ 0.5) solid solutions. Our results indicate that the introduction of stable MO6 octahedra narrows the range of oxygen stoichiometries of the material and suppresses the perovskite-brownmillerite structural phase transition at low temperatures and oxygen partial pressures. We have studied the thermal stability of the synthesized materials in a reducing atmosphere and the effect of oxygen stoichiometry on their electronic and oxygen-ionic conductivity and phase transformations.  相似文献   

5.
The heat capacity of Li x Ni2 − x O2 (x = 0.40–0.76) oxides has been measured using an adiabatic calorimeter, and their thermodynamic functions have been determined. The results indicate that the lithium nickelate solid-solution series contains a two-phase region and that near-stoichiometric LiNiO2 has a layered structure, in accordance with earlier results.  相似文献   

6.
Cr1?x V x Te solid solutions with a hexagonal structure (NiAs type) have been obtained in the composition range x = 0?0.4 by direct melting of elemental mixtures, followed by annealing and quenching. The 80-K magnetic moment is found to decrease from 2.4μB in CrTe to 1.52μB in Cr0.6V0.4Te. The Curie temperature varies from 342 K to 321 K, respectively.  相似文献   

7.
Sn1−x Ni x O2 nanostructures such as nanocubes, nanospheres and hollow spheres were synthesized by a simple hydrothermal method. Room temperature photoluminescence spectra of the as-synthesized samples display a strong yellow emission at about 600 nm and a weak blue emission at about 430 nm. The as-prepared and annealed Sn1−x Ni x O2 (x = 0, 0.01, 0.02, 0.04) were characterized by X-ray diffraction, field emission scanning electron microscopy, Raman spectrum, UV–Vis absorption spectra, and room temperature photoluminescence spectra. By investigating the relationship between the Raman band centered at 560 cm−1 and the photoluminescence of the samples, we suggest that the broad yellow emission and weak blue emission primarily originate from singly ionized oxygen vacancies and tin interstitials, respectively.  相似文献   

8.
Single-crystalline Si1 − x Ge x ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si1 − x Ge x single crystals have been studied as functions of the germanium content.  相似文献   

9.
We have synthesized Li x Ni2 − x O2 oxides in the range x = 0.1–0.84 and showed that the solid-solution system contains a two-phase region. The heat capacity of Li x Ni2 − x O2 has been determined by differential scanning calorimetry.  相似文献   

10.
11.
La x Bi1?x FeO3(x = 0, 0.03, 0.06, 0.1, 0.2, 0.3, 0.5, 1) powders and thin films have been prepared by a conventional ceramic processing technique, and their mass magnetization and magnetic susceptibility have been measured at temperatures from 77 to 1000 K. The electron density distribution in BiFeO3 and antiferromagnetic La0.5Bi0.5FeO3 has been determined using self-consistent FP LMTO calculations within the localdensity-functional approximation.  相似文献   

12.
Recent studies have reported room-temperature ferromagnetism (FM) in Fe doped SnO2. The FM in semiconductors due to transition metal doping has been argued to be carrier mediated. Fluorine (F) doping in pure SnO2 has been reported to significantly increase the carrier concentration. In this work, we investigated the role of F doping in the range from 0% to 0.79% on the FM of chemically synthesized single phase Sn1?x Fe x O2 using X-ray diffraction, UV–Vis spectrophotometry, particle-induced X-ray emission, particle-induced gamma ray emission and magnetometry. The saturation magnetization M s (0.03 emu/g) increased by a factor of 2.5 and the lattice volume and band gap energy decreased by 0.35 Å3 and 0.2 eV, respectively, with 0.67% F doping (F/Sn atom %) compared to the sample without any fluorine.  相似文献   

13.
Epitaxial layers of n-type Si1 − x Snx (0 ≤ x ≤ 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of pSi-nSi1 − x Snx (0 ≤ x ≤ 0.04) structures were studied at various temperatures. It is established that Si0.96Sn0.04 films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the pSi-nSi0.96Sn0.04 structure is shifted to longer wavelengths as compared to that of the pSi-nSi structure. The photosensitivity of the pSi-nSi0.96Sn0.04 structure in the impurity absorption range depends on the temperature.  相似文献   

14.
The thermoelectric properties of TlIn1 ? x Eu x Te2 (0 < x ≤ 0.09) solid solutions have been studied at temperatures from 300 to 500 K. The results indicate that the thermoelectric figure of merit of the alloys increases with temperature and europium content.  相似文献   

15.
We report the optical and electrical properties of a-Si:H and a-Si1 − x C x :H (x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity.  相似文献   

16.
We propose a new technology for the formation of an energy barrier on crystals of Cd1 ? x Mn x Te solid solutions. Rectifying photosensitive heterostructures of the intrinsic oxide-Cd1 ? x Mn x Te (x = 0.6?1) type have been obtained for the first time by means of thermal oxidation. Stationary current-voltage characteristics and relative quantum efficiency spectra of these heterostructures have been measured. The energy spectrum and the character of interband transitions in Cd1 ? x Mn x Te are discussed. It is shown that the thermal oxidation process can be used for the fabrication of heterophotoconverters based on single crystals of dilute magnetic semiconductors of the Cd1 ? x Mn x Te system.  相似文献   

17.
Nanostructuring in fluorite-like Ca1 ? x La x F2 + x is shown to be associated with the precipitation of an CuAu-ordered phase. The shape of the precipitates is governed by the energetics of the {001} and {111} faces of tetragonal inclusions in highly anisotropic media and is nearly cuboctahedral. The misfit strain relaxes through the generation of twins, which nucleate along the intersection lines of {001} and {111} faces. The twins impede facial development and further growth and ordering of precipitates, thereby freezing the precipitation process in its initial stage. For this reason, the phase segregation is difficult to reveal, and Ca1 ? x La x F2 + x crystals appear homogeneous.  相似文献   

18.
The modified Becke–Johnson (MBJ) exchange potential together with correlation part of M06 Minnesota functional was used to obtain accurate band structure profile for Al x In1?x P ternary semiconductor alloy. The effective band structures of alloys were calculated using spectral weight approach, and the composition dependence of the fundamental gap energy, critical point energies and electron effective masses were estimated from the weighted average of effective band structures. The results of the supercell calculations for energy gap and bowing parameter are in good agreement with experiments. The results also show that crossover point of (Γ–Γ) direct to (Γ–x) indirect gap energies occurs at x = 0.48, which is consistent with experimental findings. Furthermore, our results show that the combination of MBJ exchange and M06 correlation potential can be used to estimate accurate band structure profile for AlP, InP, and their alloys.  相似文献   

19.
YBaCuFe1 – xNixO5 solid solutions are shown to exist for x 0.3. Data are presented on the lattice parameters, thermal stability, thermal expansion, electrical conductivity, thermoelectric power, magnetic susceptibility, and dielectric properties of the solid solutions. Ni substitution for Fe notably increases the electrical conductivity of the solid solutions, reduces their thermoelectric power and thermal expansion, and shifts the antiferromagnetic—paramagnetic phase transition and dielectric anomalies in YBaCuFe1 – xNixO5 to lower temperatures.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1515–1519.Original Russian Text Copyright © 2004 by Chizhova, Klyndyuk, Bashkirov, Petrov, Makhnach.  相似文献   

20.
Periodic arrays of Fe x Sn1?x O2 nanostructures were fabricated by glancing angle sputter deposition onto self-assembled close-packed arrays of 200-nm-diameter polystyrene microspheres. After annealing at 873 K for 3 h, all the films were crystallized to rutile SnO2 and maintained good thermal stability in the morphology. Compared with Fe x Sn1?x O2 flat films, arrays of Fe x Sn1?x O2 nanostructures possessed larger saturation magnetic moment and exhibited both perpendicular and in-plane magnetic anisotropy, resulting from the anisotropic morphology of Fe x Sn1?x O2 nanostructures. The EPR signal originating from the oxygen vacancies significantly varied with the Fe concentration and reached the strongest at x = 0.059, which is consistent with the saturation magnetization. It demonstrates that the oxygen vacancies are an important factor for the ferromagnetism of Fe x Sn1?x O2 films.  相似文献   

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