Improving the Magnetic Properties of Li-Zn-Ti Ferrite by Doping with H3BO3-Bi2O3-SiO2-ZnO Glass for LTCC Technology

Li-Zn-Ti ferrite doped with 0.5 wt.% to 16 wt.% H₃BO₃-Bi₂O₃-SiO₂-ZnO (BBSZ) glass was synthesized using a low-temperature ceramic sintering process. Selected parameters of saturation induction (B _S), coercivity (H _C), Curie temperature (T _C), and complex permeability spectra were measured as functions of doping content, and their relationships with ferrite density and microstructure are discussed. It was found that Li-Zn-Ti ferrite can be fired at low temperature (900°C) with BBSZ glass content varying from 0.5 wt.% to 2 wt.%. The real permeability increased from 80 to 190 in the frequency range from 1 MHz to 3 MHz, the saturation induction B _S increased from 105 mT to 150 mT at 1 kHz, whereas the coercivity H _C decreased from 165 A/m to 65 A/m at 1 kHz and the Curie temperature T _C slightly declined from 155°C to 143°C. These results confirm that this new ferrite material could be used in low-temperature cofired ceramic (LTCC) devices.     

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

A study of the growth parameters governing the nucleation of metastable superconducting A15 V₃Si on Si and A1₂O₃ is presented. Nominally, 500Å films of V_1-xSi_x were produced through codeposition of V and Si onto heated (111) Si and (1102) A1₂O₃ substrates. Samples were prepared in a custom-built ultrahigh vacuum (UHV) chamber containing dual e-beam evaporation sources and a high temperature substrate heater. V and Si fluxes were adjusted to result in the desired average film composition. V_0.75Si_0.25 films prepared at temperatures in excess of 550° C on Si show significant reaction with the substrate and are nonsuperconducting while similar films grown on A1₂O₃ exhibit superconducting transition temperatures(@#@ T_c @#@) approaching bulk values for V₃Si (16.6-17.1 K). Codeposition at temperatures between 350 and 550° C results in superconducting films on Si substrates while growth at lower temperatures results in nonsuperconducting films. Lowering the growth temperature to 400° C has been shown throughex situ transmission electron microscopy (TEM) and Auger compositional profiling to minimize the reaction with the Si substrate while still activating the surface migration processes needed to nucleate A15 V₃Si. Variation of film composition aboutx = 0.25 is shown to result in nonsuperconducting films for highx and superconducting films with T_c approaching the bulk V value (5.4 K) for lowx. Finally, lowering the V_0.75Si_0.25 deposition rate is shown to raise T_c.     

Thermoelectric figure of merit in solid solutions with phonon scattering by off-center impurities

The Seebeck coefficient and the electrical and thermal conductivities (S, σ, and κ) of ternary PbTe_1?xSe_x (x=0.1 and 0.3) and quaternary PbTe_1?2xSe_xS_x (x=0.025, 0.05, 0.1, and 0.15) solid solutions have been studied. Polycrystalline samples with an electron density of (0.5–5.0)×10¹⁸ cm^?3 were used; their quality was monitored by comparing the measured and calculated mobility values at 85 K. A considerable decrease in mobility and an anomalous trend in the σ(T) curve near 77 K were revealed in quaternary alloys with x?0.1; for x=0.15, unusual behavior of κ(T) was also found. According to estimates, the lattice thermal conductivity of this material is temperature-independent in the 80-to 300-K temperature range. This means that a reduction in phonon-phonon scattering with an increase in temperature is completely compensated by an increase in the scattering on impurities. The observed anomalies of σ(T) and κ(T) are considered assuming the possible of off-center location of sulfur atoms at the lattice sites. The thermoelectric figure of merit Z of the studied alloys has been determined in the range 80–300 K. In spite of decreasing mobility, the maximum Z was obtained in a quaternary compound with x=0.1: at 300 K, Z_max=2×10^?3 K^?1 with a carrier density of ～3×10¹⁸ cm^?3; at 175 K, Z_max=1.5×10^?3 K^?1 with the density decreasing to 5×10¹⁷ cm^?3. The obtained data indicate that the introduction of off-center impurities rises Z at T?300 K.     

Design and Analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for Over 60 GHz Operation

A Modulation-Doped Field-Effect Transistor (MODFET) structure realized in InGaN-GaN material system is presented for the first time. An analytical model predicting the transport characteristics of the proposed MODFET structure is given in detail. Electron energy levels inside and outside the quantum well channel of the MODFET are evaluated. The two-dimensional electron gas (2DEG) density in the channel is calculated by self-consistently solving Schrödinger and Poisson's equations simultaneously. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G . The results are compared well with experimental f _T value of a GaN/AlGaN HFET device. By scaling the gate length down to 0.25 μm the proposed InGaN-GaN MODFET can be operated up to about 80GHz. It is shown in this paper that InGaN-GaN system has small degradation in f _T as the operating temperature is increased from 300°K to 400°K.     

Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength

It is shown that measurement of the electric-breakdown field E _br in a classically high magnetic field (H) at T = 4.2 K makes it possible to determine the value of the degree of compensation K in pure germanium with K < 50% much more precisely than at H = 0. The parameter S = E _br/H is introduced and its dependence S = f(K) is calculated; the obtained curve makes it possible to determine K if H and E _br are known. To decrease the resistance of the samples, it is recommended that measurements be carried out under “impurity” illumination. It is shown that the value of E _br is invariable at low intensities of such excitation.     

Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure

The ion-beam synthesis of InSb nanocrystals in the buried SiO₂ layer of a silicon-on-insulator structure is investigated. The distributions of In and Sb atoms after annealing at a temperature of T _a = 500–1100°C are studied. It is established that the redistribution of implanted atoms is unsteadily dependent on the annealing temperature. The formation of InSb nanocrystals occurs at Ta ≥ 800°C near the Si/SiO₂ interface and at a depth corresponding to the mean paths R _p . Analysis of the profiles of implanted atoms and of the structure and depth distribution of nanocrystals formed allows an inference regarding the two-stage character of formation of the InSb phase. In the initial stage, antimony precipitates are formed; further the precipitates serve as nuclei for indium and antimony to flow to them.     

Behaviour of Diffuse Phase Transition in Ba0.999Pr0.001 TiO3 Ceramics

Perovskite Ba_0.999Pr_0.001TiO₃ ceramics has been prepared through a solid-state reaction method. Dielectric properties of the doped BaTiO₃ (barium titanate) ceramics as a function of temperature at frequencies of 1 kHz, 10 kHz, 100 kHz, and 1 MHz are studied and reported here. Analyzing the empirical parameters, it has been shown that the Pr³⁺ addition up-shifted the temperature of the maximal dielectric constant to 180 (K) at 1 kHz. The value of the dielectric constant at higher frequencies dropped markedly. Such a marked drop in the value of the dielectric constant at higher frequencies can be explained in terms of interfacial polarization. The high dielectric constant at lower frequencies is due to the build-up of charges at the grain–grain boundary interface which is responsible for the large polarization. The ceramic was subjected to Rietveld refinement for quantitative analysis of the microstructure of the material.     

Generation of sum-frequency sideband using 964 GHz HCN laser and 70 GHz klystron radiation

Continuosly tunable submillimeter radiation above 1 THz has been generated by sum-frequency mixing of HCN laser radiation (second strongest transition at 964.3 GHz) with that of klystron (70 GHz) in the Schottky barrier diode used as the non-linear element. Generated radiation was sufficiently strong to allow the high resolution frequency measurement of 9_9,1 ← 8_8,0 transition in³²S¹⁶O.     

On the growth,structure, and surface morphology of epitaxial CdTe films

The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epitaxial films with a pure smooth surface with no inclusions of another phase (T _so = 1000–1100 K, T _su = 570–670 K) are determined. It is established that, on glassy substrates, the epitaxial films grow via the (111) plane of the face-centered cubic (fcc) lattice with the parameter a = 6.481 Å. By varying the temperature of the main and compensating sources, CdTe films with n- and p-type conductivity are produced.     

Structural Characterization and Thermoelectric Properties of Hot-Pressed CoSi Nanocomposites

Fabrication of nanocomposites by introduction of SiO₂ metal oxide nanoparticles into a cobalt silicide thermoelectric matrix is studied. The CoSi matrix material was prepared through solid-state synthesis, and the nano-SiO₂ metal oxide was introduced by mechanical grinding. The mixed powders were hot pressed to fabricate nanocomposites. The structural and morphological modifications were studied by powder x-ray diffraction analysis and scanning electron microscopy. The thermoelectric properties of the materials were followed through the Hall effect, Seebeck coefficient, and electrical and thermal conductivities in the temperature range from 300 K to 1000 K.     

Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices

Photoluminescence of In_xGa_1-xAs-GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy (MBE) is investigated. Highly strained SLS's composed of layers differing in their bulk lattice constants by as much as 2.7% are examined over the temperature range 20K-300K. Photoluminescence (PL) spectra for several In_0.28Ga_0.72AsGaAs SLS's are presented, providing data relating effective band gap and PL intensity to temperature and layer thickness. These data suggest a critical (maximum) alloy layer thickness for optical quality material in the range of 80å-100å for crystals with x = 0.28 and an In_xGa_1-xAs/GaAs layer thickness ratio of L_z/L_B = 1.3. Results of PL experiments on In_0.38Ga_{0 62}As-GaAs SLS's are also presented, and the effects of lattice misfit at the SLS/substrate interface upon the optical quality of these SLS's is examined.     

Transport coefficients of <Emphasis Type="Italic">n</Emphasis>-Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> in a two-band model of the electron spectrum

The Hall factor and thermoelectric properties of an n-Bi₂Te_2.7Se_0.3 solid solution with the roomtemperature Seebeck coefficient |S| = 212 μV/K have been studied in the temperature range 77–350 K. The observed temperature dependences demonstrate a number of specific features, which were earlier found in samples with a lower electron density N. The effect of these specific features on the thermoelectric figure of merit Z appears to be more favorable for the sample under study: this sample is most efficient in the temperature range 120–340 K, and the average value of ZT is 0.71. It is found that a rise in the density N enhances the factor responsible for the effective mass decreasing as the temperature increases. This effect appears when the analysis is carried out in terms of a single-band parabolic model with N = const(T). This finding suggests that the most probable reason for the unusual behavior of these properties is the complex structure of the electron spectrum. Temperature dependences obtained from calculations of the transport coefficients show good agreement with the experimental data for two samples of the mentioned composition with different electron densities. The calculations have been performed in terms of a two-band model and an acoustic scattering mechanism and take into account the anisotropy and nonparabolicity of the light-electron spectrum.     

Comparative analysis of the mechanisms of interface formation in a film structure under equilibrium and strongly nonequilibrium condition

Structural (X-ray and electron diffraction) investigations of the interface in films of (Zn _{1 ? x} Cd _x Te) _{1 ? y} (In₂Te₃) _y alloys and zinc selenide grown on glass substrates under strongly nonequilibrium (substrate temperature T _s = 200 K) and quasi-equilibrium (T _s = 473 K) conditions have been performed. It is shown that growth of alloy films occurs through formation of nuclei of different shape and orientation. It is established that the alloy films grown on a cooled substrate have better (with respect to crystalline orientation) structural quality in comparison with similar films grown on a heated substrate, where Ostwald ripening plays an important role during growth.     

Room temperature oxidation of lead-indium alloy films

The kinetics of growth of thin (14 to 40Å) oxide layers on lead-indium alloys was investigated ellipsometrically, using: 3000Å thick films at 23°C; and oxygen exposures at 760 torr for times ranging from five minutes to five days. Assuming that the oxide layer is comprised of a two-phase mixture of PbO and In₂O₃ having a negligible extinction coefficient made it possible to estimate the oxide composition from the ellipsometrically-obtained oxide refractive index. Under these oxidizing conditions, the volume fraction of PbO in the oxide mixture decreases from a value of unity for pure lead to zero for alloys containing more than 30 at. percent In, in agreement with the Auger Electron Spectroscopy results of Chou and coworkers. The oxidation rate equals a exp (X₁/X), where α and X₁ will be seen to vary complexly with alloy composition. A theoretical explanation of these results is also presented.     

Thermoelectric effects in nanoscale layers of manganese silicide

The values of the thermoelectric power, layer resistivity and thermal conductivity of a Mn _x Si_1–x nanoscale layer and Mn _x Si_1–x/Si superlattice on silicon depending on the growth temperature in the range T = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit ZT = 0.59 ± 0.06 is found for Mn_0.2Si_0.8 at T = 600 K.     

Specific thermoelectric properties of lightly doped Bi<Subscript>2</Subscript>(TeSe)<Subscript>3</Subscript> solid solutions

Electrical and thermoelectric properties of a lightly doped n-Bi₂Te_2.7Se_0.3 solid solution have been studied in the temperature range 77–300 K. The results are compared with data for the compound PbTe_0.9Se_0.1 with a similar magnitude of the Seebeck coefficient S at 84 K. Along with lower thermal conductivity, Bi₂Te_2.7Se_0.3 has a higher electrical conductivity σ and a much weaker temperature dependence. As a result, the power coefficient S ²σ in optimal samples begins to decrease only when the density of minority carriers becomes significant. In this case, |S| considerably exceeds the standard value of 200 μV/K. The reduction of the electron density reduces the thermoelectric figure of merit Z at its maximum and slightly lowers the temperature of the maximum; therefore, the expected effect on the average value of Z in the range 77–300 K is absent. Similar behavior is observed in Bi₂Te_2.88Se_0.12, although the effect is less pronounced. The experimental results are discussed taking into account possible changes in the dominant scattering mechanisms, carrier density, and electron energy spectrum. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 7, 2004, pp. 811–815. Original Russian Text Copyright ? 2004 by Konstantinov, Prokof’eva, Ravich, Fedorov, Kompaniets.     

High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen

Purification methods for vapor-grown InP layers have been investigated for the hydride (In/HCl/PH₃/H₂) process. The carrier concentration of non-doped InP layers was found to be decreased with a commensurate increase in mobility by increasing the indium source temperature and by introducing a small amount (a few ppm) of oxygen into the growth region. At 910 δC of In source temperature with 1.2 ppm oxygen, a 77 K mobility as high as 40,000 cm²/v.sec (3,480 cm²/v.sec at 300K) with a carrier concentration as low as 5x10¹⁴cm^?3 (8×10¹⁴cm^?3 at 300K) was obtained. Photoluminescence efficiency was also found to be improved by the above-mentioned two methods. Mass spectroscopy analysis of used In metal showed a few ppm impurity contamination, such as Sn, Fe and Cu, which were hardly detected in raw 6’9-purity In metal before the growth experiment. These results indicate that the In source has a gettering effect for impurities in input gases, mainly HC1 from a cylinder, and the effect was enhanced by increasing the In source temperature. The oxygen may play a role in the conversion to non-volatile oxides of residual impurities and hence a reduction in the impurity incorporation.     

Photosensitive structure on CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript> single crystals

Single crystals of the CdGa₂S₄ ternary compound were grown either from melt or by chemical-vapor deposition. The crystal-lattice parameters and some physical properties of homogeneous crystals having defect chalcopyrite structure with the point symmetry group \(I\bar 4(S_4^2 )\) are determined. A number of photosensitive structures—Schottky barriers, heterostructures, photoelectrochemical cells, and natural-protein-CdGa₂S₄ barriers—were formed for the first time on the basis of the single crystals under investigation. The photoelectric properties of the structures obtained were studied using natural and linearly polarized light at T=300 K. The main parameters of these structures are determined, and it is concluded that they can be used in photodetectors.     

Formation of the Thermoelectric Candidate Chromium Silicide by Use of a Pack-Cementation Process

Transition-metal silicides are reported to be good candidates for thermoelectric applications because of their thermal and structural stability, high electrical conductivity, and generation of thermoelectric power at elevated temperatures. Chromium disilicide (CrSi₂) is a narrow-gap semiconductor and a potential p-type thermoelectric material up to 973 K with a band gap of 0.30 eV. In this work, CrSi₂ was formed from Si wafers by use of a two-step, pack-cementation, chemical diffusion method. Several deposition conditions were used to investigate the effect of temperature and donor concentration on the structure of the final products. Scanning electron microscopy and x-ray diffraction analysis were performed for phase identification, and thermal stability was evaluated by means of thermogravimetric measurements. The results showed that after the first step, chromizing, the structure of the products was a mixture of several Cr–Si phases, depending on the donor (Cr) concentration during the deposition process. After the second step, siliconizing, the pure CrSi₂ phase was formed as a result of Si enrichment of the initial Cr–Si phases. It was also revealed that this compound has thermoelectric properties similar to those reported elsewhere. Moreover, it was found to have exceptional chemical stability even at temperatures up to 1273 K.     

Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

The results of investigation of electrically-detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X-band) for the identification of shallow and deep boron centers, NV _Si defects, and isolated silicon vacancies (V _Si), which are formed directly during the preparation of planar nanostructures under conditions of silicon-vacancy injection at the SiO₂/n-6H-SiC interface without any subsequent irradiation, are presented. The prepared sandwich nanostructures are an ultra-narrow p-type quantum well, confined by δ barriers heavily doped with boron on an n-6H-SiC surface, which are self-ordered during pyrolytic-oxide deposition and subsequent short-time boron diffusion. The EDEPR data of point centers in sandwich nanostructures, prepared within the framework of Hall geometry, are recorded by measuring the field dependences of the magnetoresistance without an external cavity, microwave source and detector, due to the presence of microcavities embedded in the quantum-well plane and microwave generation under conditions of a stabilized source-drain current from δ barriers containing dipole boron centers. The obtained EDEPR spectra of the shallow and deep boron centers are analyzed using the data of EPR studies in 6H-SiC bulk crystals [10]. The EDEPR spectrum of the isolated silicon vacancy reveals both the negatively charged state V _Si ^? (S = 3/2) and the neutral state in hexagonal (V _Si(h)) and quasicubic (V _{Si(k1, k2)}) states (S = 1). In turn, NV _Si defects are detected not only by the EDEPR method at 77 K, but also through the use of a Bruker ELEXSYS E580 EPP spectrometer at 9.7 GHz, in a temperature range of 5–40 K. The EDEPR and EPR spectra recorded on the same sandwich nanostructure are virtually identical and correspond to the center in the triplet state with spin S = 1. The EPR spectrum, which is a lowintensity line doublet with a splitting value equal to ΔB = 237.6 mT, is observed in the background of the EPR spectrum from donors of nitrogen, the concentration of which in the n-6H-SiC initial sample was 5 × 10¹⁸ cm^?3, whereas nitrogen donor centers are not revealed in the EDEPR spectrum because of total occupation by silicon vacancies inside the 6H-SiC sandwich nanostructure.