用于S波段光纤拉曼放大器增益平坦的长周期光纤光栅设计

根据实际所测得的S波段光纤拉曼放大器的信号增益谱,通过对长周期光纤光栅具体参数的选定,由两个长周期光纤光栅级联滤波的组合,可以使增益图谱在50 nm(1485-1535 nm)带宽内,增益平坦度达到±0.6dB以内.由三个长周期光纤光栅级联滤波组合,可以使增益图谱在49 nm(1490-1539 nm)带宽内,增益平坦度达到0.5 dB, 55 nm(1485-1540 nm)带宽内,增益平坦度达到1 dB.这对扩大长周期光纤光栅增益平坦滤波器的运用范围,扩大单泵浦S波段光纤拉曼放大器的有效增益带宽有着积极的意义.     

采用增益均衡技术的Er3+/Yb3+双包层光纤放大器

根据长周期光纤光栅(LPG)的透射谱公式,分析了长周期光纤光栅均衡滤波器的特性,并对Er3 /Yb3 双包层光纤和集束熔锥耦合结构的光纤放大器进行了实验研究.结合不使用增益平坦技术条件下增益特性曲线的特点,设计了一种由三个LPG组成的均衡滤波器.实验结果表明,在1 525～1 565 nm波段上实现了50个信道的WDM光放大输出,平坦度为0.3 dB.     

用于S波段光纤拉曼放大器增益平坦的长周期光纤光栅设计

根据实际所测得的S波段光纤拉曼放大器的信号增益谱,通过对长周期光纤光栅具体参数的选定,由两个长周期光纤光栅级联滤波的组合,可以使增益图谱在50nm(1485～1535nm)带宽内,增益平坦度达到士0．6dB以内．由三个长周期光纤光栅级联滤波组合,可以使增益图谱在49nm(1490～1539nm)带宽内,增益平坦度达到0．5dB,55nm(1485～1540nm)带宽内,增益平坦度达到1dB．这对扩大长周期光纤光栅增益平坦滤波器的运用范围,扩大单泵浦S波段光纤拉曼放大器的有效增益带宽有着积极的意义．     

基于长周期光纤光栅的增益均衡器设计

运用耦合模理论,通过对长周期光纤光栅形成的光纤中导模和包层模耦合的分析计算,设计了一个由三个长周期光纤光栅组成的掺铒光纤放大器的增益平坦滤波器。针对掺铒光纤放大器的一个典型增益曲线,这一滤波器可实现33nm带宽内小于0．3dB的增益平坦,而且所选取的基准增益得到保留,基准增益对应的增益带宽损失很小。     

采用增益均衡技术的Er^3＋／Vb^3＋双包层光纤放大器

根据长周期光纤光栅（LPG）的透射谱公式，分析了长周期光纤光栅均衡滤波器的特性，并对Er^3＋／Yb^3＋双包层光纤和集束熔锥耦合结构的光纤放大器进行了实验研究。结合不使用增益平坦技术条件下增益特性曲线的特点，设计了一种由三个LPG组成的均衡滤波器。实验结果表明，在1525～1565nm波段上实现了50个信道的WDM光放大输出，平坦度为0．3dB。     

运用长周期光纤光栅实现EDFA的增益平坦化

针对Perilli公司生产的OP 980型掺铒光纤放大器 (EDFA)的增益谱不平坦特性 ,运用紫外写入的方法研制成使其增益平坦化的长周期光纤光栅增益平坦化器件 ,实现了该掺铒光纤放大器在 30nm范围内的增益谱波动小于± 0 4dB。     

碲基掺铒光纤放大器增益均衡的数值模拟

针对宽带碲基掺铒光纤放大器(EDTFA)本征增益谱不平坦特性,研究了采用双级串连结构,并在两段光纤中间加入增益均衡滤波器来实现增益平坦.模拟结果显示,通过设计一定结构的滤波谱,在37信道同时输入的情况下,铒离子掺杂浓度为4000 ppm时,使1536～1608 nm范围带宽内的增益达到了24 dB左右,噪声指数小于5.5 dB,增益谱的不平坦度小于1 dB;铒离子掺杂浓度为6000 ppm时,使1536～1608 nm范围带宽内的增益达到了23.5 dB左右.噪声指数小于5 dB,增益谱的不平坦度小于1dB.优化后的级连EDTFA可以满足WDM系统的要求.     

高频CO2激光脉冲写入的新型长周期光纤光栅及其在光通信中的应用

报道了一种利用频率为几千赫兹的高频CO2激光脉冲的热冲击效应制作长周期光纤光栅的新技术。实验中，作者首次发现这种新型的长周期光纤光栅具有一些独特的光学特性，比如弯曲特性和横向负载特性等，这主要是因为用高频CO2激光脉冲写成的长周期光纤光栅的横截面折射率分布不对称所致。基于这种新型长周期光纤光栅，设计了一种用于减小掺铒光纤放大器噪声系数的ASE噪声滤波器和平坦掺铒光纤放大器增益谱的增益均衡器，此外，还利用这种新型长周期光纤光栅独特的弯曲和压力特性，研究设计了两种用于动态平坦掺铒光纤放大器增益谱的动态增益均衡器。     

长周期光纤光栅(LPG)均衡滤波器在光纤放大器中的应用

根据耦合模理论 ,给出了两级关联和非关联长周期光纤光栅的透射率表达式 ,从而指出在进行LPG均衡滤波器设计时 ,应采用非关联的光栅 ,可以构成灵活多变的透射谱 ,非常适合光纤放大器的不同增益谱对均衡滤波器传输特性 (透射谱 )的不同要求。以此为基础 ,设计和模拟计算了 LPG均衡光纤宽带放大器的增益及噪声谱。结果表明 ,采用均衡滤波方式是使光纤放大器增益平坦的有效方法     

基于高斯拟合的级联光子晶体光纤拉曼放大器

为了满足超高速、大容量的光纤传输系统的需求,本文在两段光纤级联结构的基础上,分析了光子晶体光纤的拉曼增益谱并采用高斯曲线对其进行拟合,设计了一种高增益、宽带宽的拉曼光纤放大器。高斯曲线拟合完整准确地保留了光子晶体光纤的增益谱信息,同时尽可能地增加了信号的传输带宽。利用四阶龙格-库塔法对经典的拉曼耦合波微分方程进行数值求解,不仅降低了放大器的增益平坦度,也实现了高增益放大。相比于直线拟合光纤拉曼增益谱的方法,提升了系统的传输容量。通过仿真分析得到:放大器的放大带宽为61 nm,其增益高达22.8 dB,增益平坦度仅为0.42 dB。     

Design and Simulation of Broadband IR integrated Waveguide Amplifiers with Long - Period Waveguide Grating Filter

A novel broadband IR integrated Er-Yb codoped phosphate glass waveguide amplifier with a long-period waveguide grating is proposed. The long-period waveguide grating, which is used as a gain equalizer, is directly fabricated in the waveguide. The amplifier model is based on propagation and population-rate equations and includes both uniform and pair-induced up-conversion mechanisms. It is solved numerically by combining overlapping integral and Runge-Kutta(RK) algorithm. The intrinsical gain spectrum of the proposed amplifier is obtained by solving a set of rate and power propagation equations and, the deleterious gain peaking is reduced by the long-period waveguide grating filter. The effects of transmission spectrum of the proposed long-period grating on flattening gain are discussed. An average gain  ~ 20dB between 1532 nm and 1565 nm with gain difference of  < 3dB is achieved.     

Theoretical and experimental investigation of a thin-film waveguide laser amplifier with a lossy cladding

In laser amplifiers using high gain materials such as dyes or semiconductors, the inherent broad-band amplified spontaneous emission (ASE) may strongly saturate the amplifier gain: this yields a severe limitation on the amplification of small signals. We show that this difficulty can be appreciably overcome in an optical waveguide amplifier with a lossy cladding. A theoretical analysis of gain saturation by the ASE noise in a lossy cladding waveguide amplifier is given, and the small-signal gain improvement is stressed. An experiment involving a metal-clad thin-film dye laser amplifier is reported, the results of which are in agreement with the theoretical predictions.     

Compact high gain erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion exchange

A report is presented on an erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion-exchange in a commercial phosphate glass substrate. The 31 mm-long active waveguide provides a maximum internal gain of 5.3 dB/cm at 1534 nm. The amplifier was fully characterised in terms of gain spectrum, noise figure, pump efficiency and gain saturation.     

Beyond G-band: a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz.     

A Hybrid AlGaInAs–Silicon Evanescent Amplifier

We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degC. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification     

Pumping planar waveguide amplifiers using a coupled waveguidesystem

A novel scheme is presented that can be used to efficiently pump optical waveguide amplifiers. It is based on the coupling between two adjacent waveguides, where pump light is gradually coupled from a nonabsorbing pump waveguide into the amplifier waveguide. The coupling between the waveguides in such a configuration is calculated using an improved coupled mode theory (CMT). The proposed distributed coupling scheme can enhance the optical gain in systems that exhibit a reduced pumping efficiency at high pump power. A numerical example is given for a sensitized neodymium-doped polymer waveguide amplifier, in which the optical gain increases from 0.005 dB to 1.6 dB by changing from conventional butt-coupling to distributed coupling     

Theoretical and experimental research on Er-doped and Yb-Er co-doped Al2O3 waveguide amplifiers

The rate equations of Er-doped and Yb-Er codoped systems pumped at 0.98 μm are presented, with consideration for the upconversion mechanisms such as cooperative upconversion, cross relaxation, and excited state absorption. A multi-theoretical model is founded to analyze the gain characteristics of Er-doped and Yb-Er co-doped Al2O3 waveguide amplifiers by using rate equations, a two-dimension waveguide finite element model and propagation equations with forward and backward amplified spontaneous emission. The dependence of the gain on amplifier length, pump power and doping concentration is obtained. The optimum design curve is given for designing waveguide amplifiers. The new theory is used to analyze the gain performance of a practical Yb-Er co-doped Al2O3 waveguide amplifier, and the analyzed results are in accordance with the experimental data.     

D波段固态放大器模块设计

重构了Ommic公司CGY2191UH芯片模型,建立了一个精确D波段放大器模块模型;并且设计和加工了一种D波段放大器模块验证了模型的准确性。D波段放大器模块模型包括多节波导模型、共面波导-矩形波导过渡模型、金丝键合线等效电路模型以及CGY2191UH芯片模型。通过对模型的分析并基于目前国内成熟工艺,设计和加工了一种D波段放大器模块。测试结果表明,该模块在110 GHz~140 GHz增益大于4.5 d B,其中最大增益在122 GHz为10 d B。增益测试曲线和模型仿真结果吻合,证明了模型的有效性。     

Gain distribution measurement of an erbium-doped silica-based waveguide amplifier using a complex OLCR

We have measured the gain distributions of a 38-cm-long erbium-doped silica-based waveguide amplifier with different pump powers by using a complex optical low coherence reflectometer. The spatial resolution is /spl sim/5 mm and the noise level is /spl plusmn/1 dB. The measured distributions agree well with those derived from rate equations. We can estimate such amplifier parameters as the stimulated emission coefficient and the optimum waveguide length enabling us to achieve the maximum gain for any pump power.     

Spatial power combining for two-dimensional structures

The two-dimensional (2-D) hybrid dielectric slab-beam open and closed waveguide systems are suitable for the design of planar quasi-optical integrated circuits and devices. An open system consisting of an active E-plane amplifier array consisting of Vivaldi-type antennas with MESFET and monolithic microwave integrated circuit (MMIC) devices was investigated. The 4×1 MESFET amplifier array generated 11 and 4.5 dB of amplifier and system gain, respectively, at 7.12 GHz, and the cascade MMTC Vivaldi-type antenna produced 24 dB of amplifier gain at 8.4 GHz. Also, experiments on a new 2-D H-plane parallel-plate closed system with a stripline slot antenna is introduced, and the wavebeam-mode theory is presented. The new system minimizes scattering and isolation losses associated with open structures. The amplifier gain of the closed system based on slot antennas is compared to the open system based on Vivaldi antennas