采用压电陶瓷驱动器的高频像移补偿系统

针对成像光谱仪提出了基于压电陶瓷(PZT)驱动器的高频像移补偿技术以提高其成像质量.结合成像系统,分析了像移补偿系统需求,给出了该系统的控制策略和设计方案.针对PZT驱动器大容性负载给出了驱动器的设计方法,能够实现系统所需的高频大信号电压驱动;采用基于AD698集成芯片的信号调理电路和线性差分变压式传感器(LVDT)获...     

基于柔性铰链结构的二维微动工作台的设计分析

介绍了基于压电陶瓷驱动器(PZT)驱动的二维微动工作台。该微动台采用双柔性平行四连杆结构,运用参数化的分析方法求得铰链各尺寸对微动台固有频率、应力以及刚度的影响,将理论分析、有限元计算和试验测试的结果相结合,提出了一种微动台的设计方法。     

微流控生物芯片外部压强与流体流速的探讨

本文针对具有40个微通道的微流控生物芯片,设计了试剂进样装置,研究了几十个芯片的进样压强与芯片各微通道中流体流速之间的关系,目的是为了筛选出流速相对稳定的标准芯片,满足PCR基因扩增的需要。     

隔膜式压电驱动器的制备及其在微泵中的应用

利用块材钛酸锆铅(PZT)材料的逆压电效应设计并制备了可用于微泵驱动的压电驱动器,通过5种结构模型的仿真分析确定了压电驱动器的隔膜式结构,在获取较大中心位移的同时有效提高了结构强度,增加了驱动器的适用性。工艺上通过键合、减薄、激光烧蚀及硅的湿法刻蚀工艺完成了器件的制备,施加频率10 Hz和100 Hz的交变信号测出了中心膜片位移与对应电压的关系,施加峰峰值为1 V的信号测得共振频率为70 kHz。基于制备的压电驱动器设计并制备了机械式带止回阀的微泵,经测试泵入、泵出功能正常。当对微泵外加峰峰值为30 V、频率为500 Hz的驱动电压信号时,每分钟能驱动的液体流量为55μL。该驱动器的驱动效果好,可进一步结合不同的微阀设计制备性能更加优良的微泵。     

微型电磁驱动器中微小电磁力的研究

设计了一种应用于微机电系统中的微型电磁驱动器。该微驱动器主要由平面正方形线圈、弹性支撑和坡莫合金薄片构成。采用微细加工技术成功地制作出了这种微驱动器。该驱动器具有较大的驱动力和行程，适用于垂直方向上需求较大偏转的微机电系统中。研究了平面线圈对坡莫合金磁体的微小作用力，并用有限元模拟软件ANSYS，对该作用力进行了模拟分析。     

PZT铁电薄膜的雾化湿法刻蚀技术研究

PZT薄膜的微图形化是制备基于PZT薄膜微传感器和微驱动器的关键技术之一。通过引入雾化技术,改进了传统的PZT薄膜湿法刻蚀方法,进一步减小了薄膜微图形的侧蚀比,提高了图形的转化精度。选用体积比为1∶2∶4∶4的BHF/HCl/NH4Cl/H2O溶液作为刻蚀液,对溶胶-凝胶法制备的1μm厚PZT薄膜作雾化湿法刻蚀,刻蚀速率为28 nm/s,侧蚀比为0.5∶1。对所得样品表面区域进行EDS分析表明,所得PZT薄膜图形表面无残留物,该工艺可用于MEMS领域中PZT薄膜的微图形化。     

PZT系多层片式压电陶瓷微驱动器位移性能研究

PZT系多层片式压电陶瓷微驱动器的制作主要采用了陶瓷胚胎流延成型和一定的金属内极电共烧的技术,具有体积小、工作电压低,且位移量大等方面的特点。本文通过对PZT概念以及试验的方法整理研究,对PZT系多层片式压电陶瓷微驱动器位移性能的实验进行了科学的研究。     

用于高集成度数字PCR平台的微流控芯片

数字聚合酶链式反应(PCR)是一种强大且应用广泛的核酸检测技术.现有数字PCR平台大多存在体积庞大、集成度低、耗材价格高、样品消耗大和人工干预多等缺点.设计并制备了一款基于样本自分离的低成本数字PCR微流控芯片,该芯片的独立PCR微反应腔室数量达到37 440个.通过对芯片进行进样效率、亲水性改良以及透光性研究,验证了...     

微通道的流动阻力分析

针对在恶劣温度条件下工作的芯片热控制问题,提出由微泵、微通道、热电模块、智能控制单元、散热片以及液体管道等构成的微通道对流换热设计思想。数值仿真分析了换热微通道结构的速度和压力分布,计算了管道、微通道等部件的阻力损失和换热系统的流动阻力曲线,确定了系统必需的微泵工作性能参数,求解了微泵的最佳工况点。最后,制作了微通道对流换热装置,测得了系统流量和流动阻力,证实了可用经典流体理论来分析该系统的流动阻力。     

水质化学需氧量检测的自动进样器的研制

摘要： 重铬酸盐法测定水质化学需氧量过程中,针对传统的手工进样安全性差、精度不高等缺点,研制了一种用于实验室水质化学需氧量检测的新型自动进样装置。同时也可以用于强腐蚀性液体进样,装置可以满足16个试管进样,通过触摸屏的参数设置,可以调整进样顺序,进样次数,进样时间。设计中采用液位传感器和定量聚四氟乙烯管,提高了进样的精度,保证在1ml以内。实验结果证明该装置有效克服了实验室人工进样操作时间长、操作复杂、进样精度差的问题。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.