玻璃助剂对厚膜NTC热敏电阻器的性能影响

系统研究了Mn-Co-Ni系厚膜NTC热敏电阻器的电阻性能与玻璃助剂质量分数的关系,结果表明:当玻璃助剂质量分数为(10～30)×10-2时,电阻性能参数(RT,ρT,B和αT)随玻璃助剂质量分数的增加而显著增长;当玻璃助剂质量分数继续增加,则电阻性能参数基本不变.但当玻璃助剂质量分数为5×10-2时,厚膜电阻因烧结性能变差而导致电阻性能不稳定,同时,电阻性能参数均异常增大.当玻璃助剂质量分数为30×10-2以上时,采用本工艺制备的厚膜NTC热敏电阻器具有良好的工艺性和热稳定性.     

SnO_2-ZnO复合膜特性研究

用真空蒸发的方法,在1.33×10-3Pa的真空中,蒸发SnO2,ZnO获得超微粒结构的SnO2-ZnO复合膜。当复合膜中ZnO质量分数为20%时,SnO2-ZnO复合膜对乙醇气体的灵敏度为40,膜的方电阻值也较低,为0.01×103Ω/□。复合膜经热处理后,其电学性能也得到改善,当温度t=600℃时,ZnO质量分数为20%的SnO2-ZnO复合膜热处理后,其膜对乙醇气体有较高的选择性,灵敏度为60。当t=400℃时,对掺有Sb2O5质量分数为450×10-6,ZnO质量分数为20%的SnO2-ZnO复合膜进行热处理,其方电阻仅为0.003×103Ω/□,具有优良的导电性能。     

基于间断性腐蚀法的铂热敏传感器的研制

针对铂湿法刻蚀工艺,提出了间断性腐蚀法,并与边腐蚀边搅拌法和静止法进行了对比,结果显示该方法腐蚀铂曲线光滑、效果好。之后,以普通硅片作为衬底材料,二氧化硅作为隔热层,采用上述微机电(MEMS)工艺加工制作了铂热敏传感器。经热敏性能测试,其电阻温度系数在20℃～80℃时为1571.2×10-6/℃;同一批次电阻阻值均匀性为0.35%;非线性度为0.57%;热时间常数为1.1μs;在0.5 h的稳定性测试中其变化幅值为0.005Ω,即精度为0.01%。该热敏传感器制作工艺简单,性能优异,可用于温度敏感、气体传感等热敏传感。     

NiCrAlY薄膜应变计的研制

采用射频磁控溅射法在Ni基高温合金拉伸件上制备NiCrAlY薄膜应变计。研究了热稳定处理对NiCrAlY薄膜结构、表面形貌的影响,并且测试了NiCrAlY薄膜应变计的电学与应变性能。结果表明：热稳定处理后 NiCrAlY 薄膜应变计由于在表面形成了一层 Al2 O3膜,具有抗高温氧化的特性,在室温～800℃范围内,应变计电阻同温度呈线性变化,电阻温度系数（ TCR）约为290×10－6/℃,室温下的应变计系数（ GF）为2.1。     

厚膜压阻式传感器用钌系电阻器导电性能研究

探讨了厚膜压阻式传感器用钌系电阻器的灵敏特性和提高钌酸盐厚膜力敏电阻器灵敏系数S的方法。实验证明:钌酸盐厚膜电阻器的灵敏系数与电阻材料的物化特性、工艺条件密切相关。通过对RuO2脱水温度、合成B i2Ru2O7固相反应温度和时间控制,并进行导电相与玻璃相粒径大小的有效搭配以及纳米掺杂改性,提高厚膜力敏电阻器的灵敏系数,其值可以达到17左右,达到国际先进水平。     

镍浆在厚膜湿敏电阻器上的应用研究

介绍镍浆料和厚膜湿敏电阻器的制备工艺。用镍浆制成厚膜湿敏电阻器的电极,并将该种厚膜湿敏电阻器的湿敏特性与采用贵金属浆料制成的同类厚膜敏电阻器进行比较,湿敏电阻器的湿敏特性完全一致,且镍浆在方电阻、附着强度等性能优于贵金属浆料。     

毛细作用钌基厚膜应变电阻烧结过程中的作用和影响

本文将毛细作用的基本公式应用于钌基厚膜应变电阻的烧结过程,建立厚膜应变电阻玻璃扩散、渗透的数学模型,并用该模型对一些试验现象进行了分析,较好地解释和探讨了导电相粒径、烧结时间等对方阻的影响。     

毛细作用在钌基厚膜应变电阻烧结过程中的作用和影响

本文将毛细作用的基本公式应用于钌基厚膜应变电阻的烧结过程,建立厚膜应变电阻玻璃扩散、渗透的数学模型,并用该模型对一些试验现象进行了分析,较好地解释和探讨了导电相粒径、烧结时间等对方阻的影响.     

氧化钒薄膜的有机溶胶-凝胶制备及电学性能研究

采用V2O5粉末为原料、苯甲醇、异丁醇为溶剂,通过溶胶-凝胶工艺在玻璃衬底上制备了用于非制冷红外探测器件热敏材料的氧化钒薄膜。利用四探针、椭偏仪、XPS等技术,分别测量所制备薄膜的电阻、厚度和化学成分,总结出前驱溶液配比、退火温度、膜厚等因素对薄膜电学性能的影响。结果表明,利用原料配比为V2O5：异丁醇：苯甲醇（g：mol：mol）=1：40：4的前驱溶液,所制备的厚度为440hm的氧化钒薄膜,并经500℃退火处理,显示出的电学性能最为理想,此时氧化钒薄膜的方阻为52．284kΩ（30℃）,TCR为-3．43％／K（30℃）。     

MEMS铂薄膜温度传感器的电阻温度系数研究

采用MEMS工艺在硅衬底上制备了铂电阻薄膜温度传感器,在500℃、600℃、700℃和800℃四个温度点下对铂电阻样品进行了热处理,对样品在退火前后的电阻值进行了测试和对比分析,对800℃的退火样品的阻温特性进行了多次测量,其在零摄氏度的电阻温度系数可达3150×10-6/K。另外还对退火后的铂电阻样品阻温特性进行了多次升温降温测试,其升温曲线和降温曲线基本重合,表明退火处理可以明显的改善铂薄膜温度传感器的稳定性和重复性。     

Fabrication of IZO transparent conducting thin films by the use of magnetron sputtering equipped with ion‐beam system

Abstract— Indium zinc oxide (IZO) thin films have been prepared on glass, polycarbonate (PC), and polyethylene terephthalate (PET) substrates by using a radio‐frequency (RF) magnetron sputtering system equipped with an ion gun, and a simple OLED device was made by using IZO film. The influence of the RF power, the Ar gas volume, and the substrate temperature during the deposition process on the roughness and the electrical and optical properties of the films have been investigated. In addition, End‐Hall ion‐beam treatment of the substrates is applied before the sputtering deposition process. The sheet resistance of the IZO films is 25 Ω/□ for the glass, 21 Ω/□ for the PC, and 20 Ω/□ for the PET substrate with a thickness of 150 nm, and the lowest root‐mean‐square (rms) roughness of these IZO films were measured to be 0.58, 0.35, and 0.32 nm for glass, PC, and PET substrate, respectively. The decrease in the sheet resistance of the IZO films becomes evident after the ion‐beam treatment and makes the surface of the thin film more hydrophilic. Relative to non‐treated IZO film, the ion‐beam‐treated IZO anode in the OLED device seems to inject holes into the emitting layer to enhance the current density.     

Chemical nanotechnology for transparent conducting coatings on thin‐glass and plastic‐foil substrates

Abstract— The properties of wet‐deposited transparent conducting oxide coatings (TCO) prepared by sol‐gel and nanoparticle processing are presented, showing their potentials and limits for display applications. The electrical properties to a large extent are determined by their porous morphology and the resulting grain boundaries, leading to a conductivity which is a factor 10 to 50 lower compared to similar PVD and CVD coatings. Though sol‐gel coatings like antimony‐doped tin oxide (ATO) can be deposited at very low cost, they always require a high‐temperature heat treatment limiting the choice of substrate. For a low‐temperature curing of the coatings, instead, the use of crystalline conducting nanoparticles of indium tin oxide (ITO) in combination with a chemical binder offers considerable application potential. This processing not only allows the preparation of coatings with a sheet resistance of 1 to 2 kΩ/□ but also a direct patterning by a fast UV curing. Typical applications for wet‐deposited coatings are demonstrated including the adjustment of the properties of sputtered ITO coatings, as well as electrodes and antistatic properties on plastics substrates with a moderate conductivity in the lower kΩ/□ range.     

光纤陀螺光源热敏电阻器特性及其影响研究

系统研究和分析了国产超辐射发光二极管 (SLD) 光源的热敏电阻器的全温温度特性.试验和分析结果表明:不同 SLD 光源内的热敏电阻器特性存在不一致性,而不同厂家的光源之间的这种不一致性更为显著;部分厂家的 SLD 光源的监测热敏电阻器与控制热敏电阻器差异较大,已失去临测价值;热敏电阻器与温度的关系更接近 Steinh...     

一种AlN基陶瓷微热板NO2气体传感器研究

针对传统硅基微热板半导体气体传感器存在的热稳定性差,工艺复杂等难点,采用良好热导特性的AlN陶瓷为衬底,利用柔性机械剥离工艺和半导体材料In2O3/Nb2O5/Pt厚膜工艺制备了NO2微热板气体传感器.传感器中间加热区周围采用热隔离结构设计,降低了加热区温度分布梯度,提高了温度效率.利用ANSYS有限元工具进行了热结构仿真分析和响应测试分析,验证了热隔离结构设计的合理性.气敏测试分析表明,传感器在不同加热功率条件下,对5×10-6~100×10-6的NO2气体都具有良好的气敏响应特性,经对比分析,在功率150 mW~200 mW时稳定性最佳,且响应速率小于60 s,恢复时间在100 s左右,可实现5×10-6~100×10-6浓度的NO2气体良好检测功能.     

NiCr薄膜微加热器在低温环境下的电学特性研究

设计了一种适用于深低温环境的微型加热器。使用AC磁控溅射技术将NiCr(80/20 at.%)合金沉积到SiO2/Si基底上,并采用微加工工艺实现薄膜图形化,作为加热器的加热元件。研究了NiCr薄膜的电学性能和晶体结构与退火条件之间的关系。实验表明:在450℃氮气环境下退火30min,可以获得深低温性能优良的NiCr加热器。该加热器在20K时的电阻温度系数(TCR)为80.80×10-6/K。X射线衍射(XRD)分析显示NiCr薄膜在450℃氮气环境下退火后,薄膜的结晶度增大,因此,退火条件对薄膜的电阻率和电阻温度系数有较大的影响。     

Reduction of Sheet Resistance and Low-Thermal-Budget Relaxation of Stress Gradients in Polysilicon Microcantilever Beams Using Nickel-Silicides

Nickel-silicide (Ni_xSiy) is formed by the reaction of nickel and silicon at the temperature of couple of hundred degrees Celsius. Nickel-silicide technology is employed for the purpose of application in polysilicon-based microelectromechanical systems (MEMS) devices to reduce sheet resistance as well as to control residual stress gradients of the structures. To improve the compatibility of nickel-silicide with MEMS micromachining, anticorrosion release method is developed using cathodic protection. In situ study of stress evolutions during the reaction of a nickel film with polysilicon is quantitatively investigated using wafer curvature measurements. The phase of nickel-silicide is validated by using X-ray diffraction. The stress developed during the silicidation is utilized to control the stress gradient in polysilicon microcantilever beams. The experimental results show that the sheet resistance changes from over 20 000 Omega/sq. (insulating material) to less than 10 Omega/sq. The stress gradient is relaxed by counterbalancing the tensile residual stress at the upper part of a cantilever with a built-up compressive stress when the annealing temperature is 290 degC     

高灵敏度铂薄膜热敏电阻器精细刻蚀技术研究

为了提高铂薄膜热敏电阻器的灵敏度,设计一种标称阻值为5000Ω的超细阻栅结构。通过对高精度干法刻蚀技术研究,解决了传统激光刻蚀和反应离子刻蚀不能加工高质量精细线条的技术问题,实现7μm特征铂电阻条尺寸的加工。测试和分析表明:铂薄膜热敏电阻器在0℃下标称阻值为5 000±1.0Ω,灵敏度为19±0.5Ω/℃,温度系数为(3850±12)×10-6/℃。     

Suspension‐deposited carbon‐nanotube networks for flexible active‐matrix displays

Abstract— The unique properties of carbon nanotubes (CNTs) promise innovative solutions for a variety of display applications. The CNTs can be deposited from suspension. These simple and low‐cost techniques will replace time‐consuming and costly vacuum processes and can be applied to large‐area glass and flexible substrates. Single‐walled carbon nanotubes (SWNTs) have been used as conducting and transparent layers, replacing the brittle ITO, and as the semiconducting layer in thin‐film transistors (TFTs). There is no need for alignment because a CNT network is used instead of single CNTs. Both processes can be applied to glass and to flexible plastic substrates. The transparent and conductive nanotube layers can be produced with a sheet resistance of 400 Ω/□ at 80% transmittance. Such layers have been used to produce directly addressed liquid‐crystal displays and organic light‐emitting diodes (OLED). The CNT‐TFTs reach on/off ratios of more than 10⁵ and effective charge‐carrier mobilities of 1 cm²/V‐sec and above.