采用低温Si技术的Si/SiGe异质结P-MOSFET

针对S i/S iG e p-M O SFET的虚拟S iG e衬底厚度较大(大于1μm)的问题,采用低温S i技术在S i缓冲层和虚拟S iG e衬底之间M BE生长低温-S i层。S iG e层应力通过低温-S i层释放,达到应变弛豫。XRD和AFM测试表明,S i0.8G e0.2层厚度可减薄至300 nm,其弛豫度大于85%,表面平均粗糙度仅为1.02 nm。试制出应变S i/S iG e p-M O SFET器件,最大空穴迁移率达到112 cm2/V s,其性能略优于目前多采用1μm厚虚拟S iG e衬底的器件。     

大面积高效率高稳定非晶硅太阳电池的研究

根据电流连续性原则和光伏材料选择原则，对叠层电池的电流匹配进行了研究，结果表明，电流匹配是影响叠层电池短路电流和转换效率的重要因素之一，电流匹配可以通过调整单元电池厚度来实现，在此基础上，获得了面积为４００ｃｍ＾２，转移效率分别为８．２８％，７．５２％和６．７４％的ａ－Ｓｉ／ａ－Ｓｉ，ａ－Ｓｉ／ａ－ＳｉＧｅ和ａ－Ｓｉ／Ａ－Ｓｉ／ａ－ＳｉＧｅ高效率叠层电池。     

Double-Junction Schottky Diodes Using a Ti/Si/Al Structure

Ti/Si/Al structures are studied theoretically and experimentally. The effect of the reverse-biased junction on the current–voltage characteristic of the entire structure is revealed. It is noted that the behavior of the curve is determined by the image-force lowering of the potential barrier. The current–voltage characteristic is shown to obey a power law if the voltage is low enough. It is established that the capacitance of the structure decreases with increasing voltage if the latter is positive. This phenomenon is modeled using two capacitors in a series.     

大位移电子散斑干涉法

针对电子散斑干涉（ESPI）法处理大位移时的困难,提出了一种改进的ESPI法。将数字散斑相关法（DSCM）引入ESPI中,由DSCM计算引起散斑去相关的面内位移,将所得二维面内位移对失配散斑场进行校准,恢复干涉条纹。用对离面位移敏感的ESPI光路,结合相移方法求得对应离面位移的相位数据,和二维面内位移一起,构成物体三维位移。对周边同定、中心加载的有机玻璃试件进行了测量,结果表明能产生质量干涉条纹,证明该方法是合理、可行的。     

Low-Cost Vacuum Molding Process for BGA Using a Large Area Substrate

We have developed a new ball grid array vacuum molding process using a large area substrate, called vacuum dip compression molding (VDCM), with the aim of reducing the substrate molding cost. The VDCM method imposes less of a burden on the environment because it enables efficient use of the substrate area for packaging, increasing the proportion of the effective area on the substrate. In contrast to the transfer molding method, VDCM does not generate cull or runner waste. VDCM also has the advantage of reducing the thickness of the mold resin. It can mold packages with various thicknesses using a single mold. Using VDCM equipment, we conducted a basic evaluation of molding performance. It was confirmed that no significant wire sweep occurred even when the wire length exceeded 3 mm, indicating that VDCM is less prone to wire sweep compared to transfer molding. The prototyped fine pitch ball grid arrays had a satisfactory level of moisture sensitivity.     

光纤光束变换器在大视角彩虹全息中的应用

用光纤制成的光束变换元件代替大孔径透镜和狭缝拍摄彩虹全息图．大大提高了全息图的视角．而且方法简单。介绍了用光纤光束变换器拍摄大视角彩虹全息图的原理、方法．并进行了实验验证，得到了较为满意的效果。     

Large Area Electronics Using Printing Methods

After the demonstration of the first organic FET in 1986, a new era in the field of electronic began: the era of organic electronics. Although the reported performance of organic transistors is still considerably lower compared to that of silicon transistors, a new market is open for organic devices, where the excellent performance of silicon technology is not required. Several commercial applications for organic electronics have been suggested: organic RFID tags, electronic papers, imagers, sensors, organic LED drivers, etc. The main advantage of organic technologies over silicon technologies is the possibility of making low-cost, large area electronics. The main processes which allow patterning with suitable resolution on a large areas are printing methods. Here we will provide an overview of methods that can be useful in the low-cost production of large area electronics.     

采用云计算技术构建大型数据仓库平台的探讨

分析了目前电信运营商在建设大型数据仓库时在基础设施方面所面临的技术难题,结合云计算的技术特点,给出一套云计算技术解决方案,并与传统方案做了对比,具体分析了云计算方案的优势因素。     

Signal Relay Systems Using Large Space Arrays

The results of an investigation of the feasibility of using passive space arrays as highly efficient signal reflectors is reported. The design selected as having the maximum efficiency in terms of the ratio of the signal energy reflected in the required direction to the weight of the space array is a gravity gradient stabilized planar array of dipoles connected and supported by lightweight dielectric filaments. The system and space array parameters required to give a high capacity system output are examined together with the flexibility of the system parameters and operations. This analysis is to determine if a high-capacity space array system can be designed with a potential capability to operate with small stations in both the transmit and receive modes; to achieve significant improvements in spectrum utilization over that achieved in conventional active satellites; and to provide accurate position information. The status of the investigation and the need for additional experimental programs are also discussed. The Appendixes are on signal processing for the space arrays, dipole arrays as reflectors for active satellites or ground antenna systems, and space grating arrays to relay optical signals.     

Large Scale MIMO Analysis Using Enhanced LAMA

Wireless Personal Communications - In this research work, we propose a enhanced large scale multi-input multi-output (MIMO) approximate message passing (LAMA) based optimal data detector for large...     

Si间隔层对利用低温Si缓冲层生长高弛豫SiGe层的影响

利用低温生长Si缓冲层与Si间隔层相结合的方法生长高弛豫SiGe层,研究了Si间隔层在其中的作用.利用化学腐蚀和光学显微镜,观察了不同外延层厚度处位错的腐蚀图样.研究了不同温度下生长的Si间隔层对SiGe外延层中位错形成、传播及其对应变弛豫的影响.结果表明Si间隔层的引入,显著改变了外延层中位错的形成和传播,进而使得样品表面形貌也呈现出较大的差异.     

Development of an Mg2Si Unileg Thermoelectric Module Using Durable Sb-Doped Mg2Si Legs

Mg₂Si unileg structure thermoelectric (TE) modules, which are composed only of n-type Mg₂Si legs, were fabricated using Sb-doped Mg₂Si. The Mg₂Si TE legs used in our module were fabricated by a plasma-activated sintering method using material produced from molten commercial doped polycrystalline Mg₂Si, and, at the same time, nickel electrodes were formed on the Mg₂Si using a monobloc plasma-activated sintering technique. The source material used for our legs has a ZT value of 0.77 at 862 K. The TE modules, which have dimensions of 21 mm × 30 mm × 16 mm, were composed of ten legs that were connected in series electrically using nickel terminals, and the dimensions of a single leg were 4.0 mm  × 4.0 mm × 10 mm. From evaluations of the measured output characteristics of the modules, it appeared that the electrical resistance of the wiring that is used to connect each leg considerably affects the power output of the unileg module. Thus, we attempted to reduce the wiring resistance of the module and fabricated a module using copper terminals. The observed values of the open-circuit voltage and output power of the Sb-doped Mg₂Si unileg module were 496 mV and 1211 mW at ΔT = 531 K (hot side: 873 K; cool side: 342 K).     

Si间隔层对利用低温Si缓冲层生长高弛豫SiGe层的影响

利用低温生长Si缓冲层与Si间隔层相结合的方法生长高弛豫SiGe层,研究了Si间隔层在其中的作用.利用化学腐蚀和光学显微镜,观察了不同外延层厚度处位错的腐蚀图样.研究了不同温度下生长的Si间隔层对SiGe外延层中位错形成、传播及其对应变弛豫的影响.结果表明Si间隔层的引入,显著改变了外延层中位错的形成和传播,进而使得样品表面形貌也呈现出较大的差异.     

Si间隔层对利用低温Si缓冲层生长高弛豫SiGe层的影响

利用低温生长Si缓冲层与Si间隔层相结合的方法生长高弛豫SiGe层,研究了Si间隔层在其中的作用. 利用化学腐蚀和光学显微镜，观察了不同外延层厚度处位错的腐蚀图样. 研究了不同温度下生长的Si间隔层对SiGe外延层中位错形成、传播及其对应变弛豫的影响. 结果表明Si间隔层的引入，显著改变了外延层中位错的形成和传播，进而使得样品表面形貌也呈现出较大的差异.     

Large Fabrication Tolerance for VCSELs Using High-Contrast Grating

We report the experimental demonstration of a large fabrication tolerance for a single-layer, highly reflective high-index-contrast subwavelength grating (HCG) mirror. HCG vertical-cavity surface-emitting lasers (VCSELs) are demonstrated with plusmn20% variation in the HCG critical dimension. Emission wavelength of the HCG-VCSEL shifts only 2 nm with 40% change in grating spacing and 8% change in grating period.     

基于结构光源的大屏幕交互技术

 本文提出采用结构光源充分表达用户手部运动的想法,设计了结构光源和识别软件,从光点序列中提取出光点运动轨迹和用户手势的旋转信息,搜索光点位置序列的平坦区段锁定目标位置,将旋转手势解释成交互原语以扩充激光笔的交互语义.最后的性能评估结果表明,结构光源在丰富交互语义和加速目标选择方面都有着较大的改进.     

利用大屏幕电视开展媒体增值业务

介绍有线电视网络公司利用大屏幕电视开展增值业务的成功经验,并提出改进经营理念是产业发展的关键.     

Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon as Semi-Insulating Substrate

The feasibility of a novel silicon-on-semi-insulating substrate structure has been demonstrated. MOS field-effect transistors (MOSFET's) are fabricated on neutron-irradiated silicon wafers which are used as semi-insulating substrates. In order to keep the substrate semi-insulating, laser annealing is used to make the semiconducting layer, and to activate the impurities implanted in the semiconducting layer, and plasma anodization is employed to grow the gate oxide. The, mobility of carrier in the channel is about 100 cm/sup 2//V /spl dot/s for p-channel MOSFET's and 300 cm/sup 2//V /spl dot/s for n-channel devices. This structure has inherent advantages such as crystallographicafly single crystalline.     

常压射频冷等离子体刻蚀硅的研究

介绍一种新型的常压射频低温冷等离子放电设备,并用该设备进行硅刻蚀的工艺实验.研究了刻蚀硅的速率随等离子体放电功率、气体流量以及衬底温度的变化规律,并得到了最大刻蚀速率为390nm/min.利用台阶仪、显微镜和扫描电镜(SEM)对刻蚀效果进行检测与分析,证实了该设备对硅的浅刻蚀具有较好的均匀性和较高的各向异性.结果表明,该设备在常压下刻蚀硅,操作简单且不易对材料表面产生损伤.