High gamma dose response of the electrical properties of polyethylene terephthalate thin films

Electrical properties of polyethylene terephthalate (PET), irradiated with gamma rays, have been investigated. The PET films were irradiated with high gamma dose levels in the range from 100 to 2000 kGy. The changes in the DC (σ_DC) and the ac (σ_ac) conductivities, with the dose, have been performed. The effect of gamma irradiation on the dielectric constant (ε′) and loss (ε″) has been determined. Also, the dose dependence of the frequency exponent index (S), the resonance frequency (Fc) and the hopping frequency (ω_P) have been obtained. The obtained results show that increasing gamma dose leads to slight increase in σ_DC, σ_ac and ε′, while no change was observed in ε″ value. Meanwhile, S, Fc and ω_P are inversely proportional to the dose. Accordingly, the study suggests the possibility of using PET films in electronic components (capacitors, resistors, etc.), especially that operate at high gamma dose environments for the frequency independent applications.     

Determination of mass attenuation coefficients, effective atomic and electron numbers for Cr, Fe and Ni alloys at different energies

The total mass attenuation coefficients (μ_m), for Cr, Fe, Ni and Fe_xNi_1−x (x = 0.8, 0.7, 0.6, 0.5, 0.4, 0.3 and 0.2), Fe_xCr_yNi_1−(x+y) (x = 0.7, y = 0.1; x = 0.5, y = 0.2; x = 0.4, y = 0.3; x = 0.3, y = 0.3; x = 0.2, y = 0.2 and x = 0.1, y = 0.2) and Ni_xCr_1−x (x = 0.8, 0.6, 0.5, 0.4 and 0.2) alloys were measured at 22.1, 25.0, 59.5 and 88.0 keV photon energies. The samples were irradiated with 10 mCi Cd-109 and 100 mCi Am-241 radioactive point source using transmission arrangement. The γ- and X-rays were counted by a Si(Li) detector with a resolution of 160 eV at 5.9 keV. Total atomic and electronic cross-sections (σ_t and σ_e), effective atomic and electron numbers (Z_eff and N_eff) were determined experimentally and theoretically using the obtained mass attenuation coefficients for investigated 3d alloys. The theoretical mass attenuation coefficients of each alloy were estimated using mixture rule. The experimental values were compared with the calculated values for all samples.     

Pure ionization cross section of helium and ionization mechanism

Pure target ionization was investigated for 0.4-6.4 MeV C^q+(q = 1-4) + He and O^q+(q = 1-4) + He collisions. The double-to-single target ionization ratios R₂₁ were measured using coincidence techniques. We compare our results with existing experimental results and find they are in good agreement. The ratio R₂₁ is nearly independent of projectile charge state. The relation of R₂₁ ∼ V is analyzed using the over barrier model (OBM) and ionization probability, which is described in our extended over barrier model. Our calculation agrees well with the experimental results.     

Interferences in electron emission from O2 by 30 MeV O impact

Interference structures in the ejected electron spectra for 30 MeV O^5,8+ + O₂ are investigated. The measured electron yields were studied for electron energies from 5 to 400 eV and observation angles of 30°, 60°, 90°, 120° and 150° with respect to the incident beam direction. Experimental molecular cross-sections were normalized to theoretical molecular one-center cross-sections revealing oscillatory structures suggestive of secondary interferences as evidenced by the independence on the observation angle. An oscillation interval for 30 MeV O^5,8+ + O₂ of Δk ∼ 4 a.u. is found, a value two times larger than that previously observed for 3 MeV H⁺ + N₂. No obvious evidence for primary Young-type interferences was seen.     

Growth of silicon nitride films by bombarding amorphous silicon with N ions: MD simulation

In this study, the molecular dynamics simulation method was employed to investigate the growth of silicon nitride films by using N⁺ ions, with energies of 50, 100, 150 and 200 eV, to bombard an amorphous silicon surface at 300 K. After an initial period of N⁺ bombardment, saturation of the number of N atoms deposited on the surface is observed, which is in agreement with experiments. During subsequent steady state deposition, a balance between uptake of N by the surface and sputtering of previously deposited N is established. The Si(N_x) (x = 1-4) and N(Si_y) (y = 1-3) bond configurations in the grown films are analyzed.     

Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

The Au/SiO₂/n-Si (MOS) structures were exposed to beta-ray irradiation to a total dose of 30 kGy at room temperature. Irradiation effect on dielectric properties of MOS structures were investigated using capacitance−voltage (C−V) and conductance−voltage (G/ω−V) characteristics. The C−V and G/ω−V measurements carried out in the frequency range from 1 kHz to 10 MHz and at various radiation doses, while the dc voltage was swept from positive bias to negative bias for MOS structures. The dielectric constant (ε′), dielectric loss (ε″), loss factor (tan δ) and ac electrical conductivity (σ_ac) were calculated from the C−V and G/ω−V measurements and plotted as a function of frequency at various radiation doses. A decrease in the ε′ and ε″ were observed when the irradiation dose increased. The decrease in the ε′ and ε″ of irradiated MOS structures in magnitude is explained on the basis of Maxwell−Wagner interfacial polarization. Also, the σ_ac is found to decrease with increasing radiation dose. In addition, the values of the tan δ decrease with increasing radiation dose and give a peak. From the experimental results, it is confirmed that the peak of loss tangent is due to the interaction between majority carriers and interface states which induced by radiation.     

Lattice parameters of (U, Pu, Am, Np)O2−x

The solid solutions of (U_{1−z−y’−y”}Pu_zAm_y’Np_y”)O_2−x (z = 0-1, y’ = 0-0.12, y” = 0-0.07) were investigated by X-ray diffraction measurements, and a database for the lattice parameters was updated. A model to calculate the lattice parameters was derived from the database. The radii of the ions present in the fluorite structure of (U, Pu, Am, Np)O_2−x were estimated from the lattice parameters measured in this work. The model represented the experimental data within a standard deviation of σ = ±0.025%.     

Radiation-induced stress relaxation in high temperature water of type 316L stainless steel evaluated by neutron diffraction

Weld beads on plate specimens made of type 316L stainless steel were neutron-irradiated up to about 2.5 × 10²⁵ n/m² (E > 1 MeV) at 561 K in the Japan Material Testing Reactor (JMTR). Residual stresses of the specimens were measured by the neutron diffraction method, and the radiation-induced stress relaxation was evaluated. The values of σ_x residual stress (transverse to the weld bead) and σ_y residual stress (longitudinal to the weld bead) decreased with increasing neutron dose. The tendency of the stress relaxation was almost the same as previously published data, which were obtained for type 304 stainless steel. From this result, it was considered that there was no steel type dependence on radiation-induced stress relaxation. The neutron irradiation dose dependence of the stress relaxation was examined using an equation derived from the irradiation creep equation. The coefficient of the stress relaxation equation was obtained, and the value was 1.4 (×10⁻⁶/MPa/dpa). This value was smaller than that of nickel alloy.     

Single- and multiple-electron loss cross-sections for fast heavy ions colliding with neutrals: Semi-classical calculations

Extensive calculations of single, multiple and total electron-loss cross-sections of fast heavy ions in collisions with neutral atoms are performed in the semi-classical approximation using the DEPOSIT code based on the energy deposition model and statistical distributions for ionization probabilities. The results are presented for Ar¹⁺, Ar²⁺, Kr⁷⁺, Xe³⁺, Xe¹⁸⁺, Pb²⁵⁺ and U^q+ (q = 10, 28, 39, 62) ions colliding with H, N, Ne, Ar, Kr, Xe and U atoms at energies E > 1 MeV/u and compared with available experimental data and the n-particle classical-trajectory Monte Carlo (nCTMC) calculations. The results show that the present semi-classical model can be applied for estimation of multiple and total electron-loss cross-sections within accuracies of a factor of 2.From calculated data for the total electron-loss cross-sections σ_tot, their dependencies on relative velocity v, the first ionization potential I₁ of the projectile and the target atomic number Z_A are found and a semi-empirical formula for σ_tot is suggested. The velocity range, where the semi-classical approximation can be used, is discussed.     

The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1−xNx thin films

N profiles of several GaAs_1−xN_x epitaxial layers with different N mole fractions in the range 0 < x < 0.14 were obtained by using (1) heavy-ion elastic recoil detection analysis (HI-ERDA) along with Rutherford backscattering spectrometry (RBS) using a 35 MeV Si⁶⁺ beam, and (2) nuclear reaction analysis (NRA) with the ¹⁴N(α, p)¹⁷O reaction, also with RBS, using a 3.7 MeV ⁴He⁺ beam. The results from the two techniques are compared and the advantages, disadvantages and capabilities are discussed.     

Desorption of gold nanoclusters (2-30 nm) under low excitation of their electronic subsystem by Ar ions (14 keV/nm)

Gold nanodispersed targets with islands-grains sized 2-30 nm were irradiated by Ar⁷⁺ ions with the energy of 45.5 MeV and (dE/dx)_e = 14.2 keV/nm in gold. The desorbed gold nanoclusters were studied by TEM method. For all the targets desorption of intact gold nanoclusters is observed. However, for inelastic stopping of monatomic Ar ions in gold of 14.2 keV/nm desorption of nanoclusters is observed only up to ∼25 nm. The yield of the desorbed nanoclusters considerably decreases from 3 to 0.02 cluster/ion with the increase of the mean size of the desorbed nanoclusters from 3 to 14.2 nm. The results are discussed.     

Desorption of gold nanoclusters from gold nanodispersed targets by 200 keV Au5 polyatomic ions in the elastic stopping mode: Experiment and molecular-dynamics simulation

Au nanoislet targets (∅ 2-60 nm) were bombarded by 200 keV polyatomic ions (40 keV/atom), which deposit their energy mainly in the nuclear stopping mode: ∑(dE/dx)_n = 30 keV/nm and ∑(dE/dx)_e = 2 keV/nm. The matter desorbed in the form of nanoclusters was registered by TEM. The total transfer of matter was determined by neutron-activation analysis. The total yield of the ejected gold reached high values of up to 2.6 × 10⁴ atoms per Au₅ ion. The major part (2 × 10⁴ atoms per ion Au₅) of the emission is in the form of nanoclusters. The results are compared with the data of similar experiments with 1 MeV Au₅ (200 keV/atom) and other projectiles. The analysis of the experimental data and the comparison to molecular-dynamics simulation results of the desorption process show that the desorption of Au nanoislets is induced by their melting, build-up of pressure and thermal expansion.     

Formation of planar waveguide in BiB3O6 crystal by MeV carbon implantation

Non-leaky planar waveguide structure has been fabricated in x-cut BiB₃O₆ crystal by 6 MeV C³⁺ ion implantation at a dose of 1 × 10¹⁴ ions/cm². The effective refractive indices of the waveguide are measured at a wavelength of 632.8 nm. We perform a computer code based on the finite difference method to reconstruct the refractive index profiles of n_x and n_y of this waveguide. The beam propagation method is used to calculate the electric and magnetic field profiles in the waveguide region from the reconstructed refractive index profiles. Our simulated data show that the refractive index increased waveguide layer can confine the mode completely.     

Thermal conductivity of (U,Pu,Np)O2 solid solutions

The thermal conductivities of (U_,Pu_,Np)O₂ solid solutions were studied at temperatures from 900 to 1770 K. Thermal conductivities were obtained from the thermal diffusivity measured by the laser flash method. The thermal conductivities obtained below 1400 K were analyzed with the data of (U,Pu,Am)O₂ obtained previously, assuming that the B-value was constant, and could be expressed by a classical phonon transport model, λ = (A + BT)⁻¹, A(z₁, z₂) = 3.583 × 10⁻¹ × z₁ + 6.317 × 10⁻² × z₂ + 1.595 × 10⁻² (m K/W) and B = 2.493 × 10⁻⁴ (m/W), where z₁ and z₂ are the contents of Am- and Np-oxides. It was found that the A-values increased linearly with increasing Np- and Am-oxide contents slightly, and the effect of Np-oxide content on A-values was smaller than that of Am-oxide content. The results obtained from the theoretical calculation based on the classical phonon transport model showed good agreement with the experimental results.     

Thermal transport properties of hafnium hydrides and deuterides

The thermal conductivities of δ′-, δ-, δ+ε-, and ε-phase hafnium hydrides and deuterides with various hydrogen isotope concentrations (HfH_x, 1.48 ? x ? 2.03; HfD_x, 1.55 ? x ? 1.94) were evaluated within the temperature range of 290-570 K from the measured thermal diffusivity, calculated specific heat, and density. The thermal conductivities of δ′-, δ-, δ+ε-, and ε-phase HfH_x and HfD_x are independent of the temperature within the range 300-550 K and are in the range 0.15-0.22 W/cm K and 0.17-0.23 W/cm K, respectively; these values are similar to and lower than the observed thermal conductivities of α-phase Hf. The experimental results for the electrical resistivities of δ′-, δ-, δ+ε-, and ε-phase HfH_x and HfD_x and the Lorenz number corresponding to the electronic conduction, obtained from the Wiedemann-Franz rule, indicated that heat conduction due to electron migration significantly influences the thermal conductivity values at high temperatures. On the other hand, heat conduction due to phonon migration significantly affects the isotope effects on the thermal transport properties.     

The elastic He+d cross section of relevance for knock-on effects in radio frequency heated (He)D plasmas

The cross section for d+³He elastic scattering has been determined for the angular range 20-180° (CM) for beam energies E_d = 0.05 to 11 MeV through combined use of experimental data, Coulomb scattering and extrapolations. The results are used to study, for instance, how the cross section is affected by nuclear interaction contributions. Implications of these results on the calculation of knock on effects in (³He)D plasmas subjected to RF heating and their manifestations in the spectrum of the d + d fusion neutron emission are discussed.     

Angular dependence of electronic sputtering from HOPG

We have studied the angular distribution of 120 MeV Au ion beam induced sputtering yield for three cases: from crystalline highly oriented pyrolytic graphite (HOPG) for (A) normal and (B) 70° incidence and from (C) amorphous carbon sample for normal incidence. An anisotropic distribution of sputtering is observed for HOPG samples studied with a distribution Y = Acosⁿθ + Bexp[−(θ − μ)²σ²]. Though the over-cosine function dependence is observed for all the cases, the anomalous peak observed at 53° for normal incidence for HOPG sample is found to shift to 73° when the sample is tilted by 20°. No peak is observed in the amorphous carbon sample which further confirms that the anisotropy observed is due to the crystal structure and formation of a pressure pulse. The high exponent of over-cosine distribution of sputtering yield (n = 3.2-3.8) signifies formation of intense pressure pulse induced jet like sputtering.     

Effect of swift heavy ion irradiation on the surface morphology of highly c-axis oriented LSMO thin films grown by pulsed laser deposition

A detailed investigation of the surface morphology of the pristine and swift heavy ion (SHI) irradiated La_0.7Sr_0.3MnO₃ (LSMO) thin film using atomic force microscope (AFM) is presented. Highly c-axis oriented LSMO thin films were grown on LaAlO₃ (1 0 0) (LAO) substrates by the pulsed laser deposition (PLD) technique. The films were annealed at 800 °C for 12 h in air (pristine films) and subsequently, irradiated with SHI of oxygen and silver. The incident fluence was varied from 1 × 10¹² to 1 × 10¹⁴ ions/cm² and 1 × 10¹¹ to 1 × 10¹² ions/cm² for oxygen and silver ions, respectively. X-ray diffraction (XRD) studies reveal that the irradiated films are strained. From the AFM images, various details pertaining to the surface morphology such as rms roughness (σ), the surface rms roughness averaged over an infinite large image (σ_∞), fractal dimension (D_F) and the lateral coherence length (ξ) were estimated using the length dependent variance measurements. In case of irradiated films, the surface morphology shows drastic modifications, which is dependent on the nature of ions and the incident fluence. However, the surface is found to remain self-affine in each case. In case of oxygen ion irradiated films both, σ_∞ and D_F are observed to increase with fluence up to a dose value of 1 × 10¹³ ions/cm². With further increase in dose value both σ_∞ and D_F decreases. In case of silver ion irradiated films, σ_∞ and D_F decrease with increase in fluence value in the range studied.     

Experimental study of the Ho(p,n) nuclear reaction for production of the therapeutic radioisotope Er

The 10.3 h half life radionuclide ¹⁶⁵Er, decaying by electron capture to stable ¹⁶⁵Ho, is an excellent candidate for Auger-electron therapy. In the frame of a systematic study of charged particle production routes of ¹⁶⁵Er, the excitation function of the ¹⁶⁵Ho(p,n)¹⁶⁵Er reaction was measured up to 35 MeV by using a stacked foil irradiation technique and X-ray spectroscopy. The measured excitation function shows a significant energy shift when compared to the only experimental dataset measured earlier and an acceptable agreement with the results of different nuclear reaction model codes. The thick target yields calculated from the excitation function at typical energies available at small cyclotrons (E_p = 11 MeV and E_p = 15 MeV) are 41 MBq/μAh = 11 GBq/C and 75 MBq/μAh = 21 GBq/C, respectively.     

Measurement of thermal neutron cross-sections and resonance integrals for Hf(n,γ)Hf and Hf(n,γ)Hf reactions at the Pohang neutron facility

The thermal-neutron cross-sections and the resonance integrals for the ¹⁷⁹Hf(n,γ)^180mHf and the ¹⁸⁰Hf(n,γ)¹⁸¹Hf reactions have been measured by the activation method. The high purity Hf and Au metallic foils within and without a Cd shield case were irradiated in a neutron field of the Pohang neutron facility. The gamma-ray spectra from the activated foils were measured with a calibrated p-type high-purity Ge detector.In the experimental procedure, the thermal neutron cross-sections, σ₀, and resonance integrals, I₀, for the ¹⁷⁹Hf(n,γ)^180mHf and the ¹⁸⁰Hf(n,γ)¹⁸¹Hf reactions have been determined relative to the reference values of the ¹⁹⁷Au(n,γ)¹⁹⁸Au reaction, with σ₀ = 98.65 ± 0.09 barn and I₀ = 1550 ± 28 barn. In order to improve the accuracy of the experimental results, the interfering reactions and necessary correction factors were taken into account in the determinations. The obtained thermal neutron cross-sections and resonance integrals were σ₀ = 0.424 ± 0.018 barn and I₀ = 6.35 ± 0.45 barn for the ¹⁷⁹Hf(n,γ)^180mHf reaction, and σ₀ = 12.87 ± 0.52 barn and I₀ = 32.91 ± 2.38 barn for the ¹⁸⁰Hf(n,γ)¹⁸¹Hf reaction. The present results are in good agreement with recent measurements.