Investigation by slow positron beam of defects in CLAM steel induced by helium and hydrogen implantation

Hydrogen and helium ion beams delivering different doses are used in the ion implantation, at room temperature, of China Low Activation Martensitic (CLAM) steel and the induced defects studied by Doppler broadening of gamma-rays generated in positron annihilation. Defect profiles are analysed in terms of conventional S and W parameters, measures of relative contributions of low and high-momentum electrons in the annihilation peak, as functions of incident positron energies E up to 30 keV. The behaviours of the S-E, W-E and S-W plots under different implantation doses indicate clearly that the induced defect size has obvious variation with depth, taking values that interpolate between surface and bulk values, and depend mainly on helium ion fluences. The S-W plot indicates that two types of defects have formed after ion implantation.     

Vitamin C hinders radiation cross-linking in aqueous poly(vinyl alcohol) solutions

Poly(vinyl alcohol) (PVA) is a promising semi-crystalline material for biomedical applications. It is soluble in water and can be formed into hydrogels by freezing and thawing or crystallizing from an aqueous theta solution such as that of polyethylene glycol (PEG). Radiation cross-linking caused by sterilization or high dose irradiation of concentrated PVA solutions could compromise some properties of these hydrogels. Therefore, we hypothesized that radiation cross-linking of PVA solutions and PVA-PEG theta gels could be prevented by using the antioxidant vitamin C as an anticross-linking agent. Our hypothesis tested positive. Vitamin C concentrations of 0.75 and 4.5 mol/mol of PVA repeating unit could prevent cross-linking in 17.5 wt/v% PVA solutions made with PVA molecular weight of 115,000 g/mol irradiated to 25 and 100 kGy, respectively. Vitamin C also prevented cross-linking in 25 kGy irradiated PVA-PEG theta gels containing up to 5 wt% PEG and decreased the viscosity of those up to 39 wt%.     

Experimental study of the response of radiochromic films to proton radiation of low energy

We have investigated the response of radiochromic films (MD-55 and HD-810) exposed to protons of 0.6 MeV. Each film is bombarded with a proton beam in an angular geometry, in such a way that the absorbed dose is related to angle. Depending on the energy and the angular fluence, the irradiated volume is total or partial. We compare the dose of these irradiated films with fully irradiated films exposed to γ radiation from a ⁶⁰Co calibrated source.     

Irradiation-induced precipitation modelling of ferritic steels

In high strength low alloy (HSLA) steels typically used in reactor pressure vessels (RPV), irradiation-induced microstructure changes affect the performance of the components. One such change is precipitation hardening due to the formation of solute clusters and/or precipitates which form as a result of irradiation-enhanced solute diffusion and thermodynamic stability changes. The other is irradiation-enhanced tempering which is a result of carbide coarsening due to irradiation-enhanced carbon diffusion. Both effects have been studied using a recently developed Monte Carlo based precipitation kinetics simulation technique and modelling results are compared with experimental measurements. Good agreements have been achieved.     

Neutron irradiation-induced dimensional changes in MEMS glass substrates

A study is made of radiation-induced expansion/compaction in Pyrex^® (Corning 7740) and Hoya SD-2^® glasses, which are used as substrates for MEMS devices. Glass samples were irradiated with a neutron fluence composed primarily of thermal neutrons, and a flotation technique was employed to measure the resulting density changes in the glass. Transport of Ions in Matter (TRIM) calculations were performed to relate fast (∼1 MeV) neutron atomic displacement damage to that of boron thermal neutron capture events, and measured density changes in the glass samples were thus proportionally attributed to thermal and fast neutron fluences. Pyrex was shown to compact at a rate of (in Δρ/ρ per n/cm²) 8.14 × 10⁻²⁰ (thermal) and 1.79 × 10⁻²⁰ (fast). The corresponding results for Hoya SD-2 were 2.21 × 10⁻²¹ and 1.71 × 10⁻²¹, respectively. On a displacement per atom (dpa) basis, the compaction of the Pyrex was an order of magnitude greater than that of the Hoya SD-2. Our results are the first reported measurement of irridiation-induced densification in Hoya SD-2. The compaction of Pyrex agreed with a previous study. Hoya SD-2 is of considerable importance to MEMS, owing to its close thermal expansivity match to silicon from 25 to 500°C.     

Ion beam radiation effects in monazite

Monazite is a potential matrix for conditioning minor actinides arising from spent fuel reprocessing. The matrix behavior under irradiation must be investigated to ensure long-term containment performance. Monazite compounds were irradiated by gold and helium ions to simulate the consequences of alpha decay. This article describes the effects of such irradiation on the structural and macroscopic properties (density and hardness) of monazites LaPO₄ and La_0.73Ce_0.27PO₄. Irradiation by gold ions results in major changes in the material properties. At a damage level of 6.7 dpa, monazite exhibits volume expansion of about 8.1%, a 59% drop in hardness, and structure amorphization, although Raman spectroscopy analysis shows that the phosphate-oxygen bond is unaffected. Conversely, no change in the properties of these compounds was observed after He ion implantation. These results indicate that ballistic effects predominate in the studied dose range.     

Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

A systematic study of Ni based ohmic and Schottky contacts (SCs) onto the n-4H-SiC and n-6H-SiC under relatively low-dose (1 × 10¹² e⁻ cm⁻²) and high-energy (6, 12, 15 MeV) electron irradiation (HEEI) has been introduced. Lower specific contact resistivity has been reached for Ni based ohmic contact structures on both 4H and 6H-SiC after each electron irradiation. This finding has been explained by the displacement damage produced by the collision of electrons with atoms of Ni contact material. It has been observed that the HEEI caused to increase in the ideality factors of both SCs indicating deviation from thermionic emission theory in current transport mechanism. While the Schottky barrier height (SBH) for Ni/4H-SiC SC remains nearly constant, an increase has been observed for the Ni/6H-SiC SC. Donor concentrations for both diodes have decreased with increasing electron energy probably due to the trapping effect of the irradiation induced defect(s).     

A systematic study on analysis-induced radiation damage in silicon during channeling Rutherford backscattering spectrometry analysis

Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced radiation damage in silicon. A 140-keV H⁺ ion beam was incident along 〈1 0 0〉 Si axis at room temperature to a fluence ranging from 1.6 × 10¹⁶ cm⁻² to 7.0 × 10¹⁶ cm⁻². The evolution of the aligned yields versus fluences has been examined and found to agree well with a model proposed by us.     

Ion track formation in low temperature silicon dioxide

Low temperature silicon dioxide layers (LTO), deposited on crystalline silicon substrates, and thermally densified at 750 °C for 90 min or 900 °C for 30 min, jointly with thermally grown silicon dioxide layers, were irradiated with low fluence 11 MeV Ti ions. A selective chemical etch of the latent tracks generated by the passage of swift ions was performed by wet or vapour HF solution. The wet process produced conically shaped holes, while the vapour procedure generated almost cylindrical nanopores. In both cases thermal SiO₂ showed a lower track etching velocity V_t, but with increasing the densification temperature of the LTO samples, the V_t differences reduced. LTO proved to be suitable for wet and vapour ion track formation, and, as expected, for higher densification temperatures, its etching behaviour approached that of thermal silicon dioxide.     

Radiation effects in cubic zirconia: A model system for ceramic oxides

Ceramics are key engineering materials for electronic, space and nuclear industry. Some of them are promising matrices for the immobilization and/or transmutation of radioactive waste. Cubic zirconia is a model system for the study of radiation effects in ceramic oxides. Ion beams are very efficient tools for the simulation of the radiations produced in nuclear reactors or in storage form. In this article, we summarize the work made by combining advanced techniques (RBS/C, XRD, TEM, AFM) to study the structural modifications produced in ion-irradiated cubic zirconia single crystals. Ions with energies in the MeV-GeV range allow exploring the nuclear collision and electronic excitation regimes. At low energy, where ballistic effects dominate, the damage exhibits a peak around the ion projected range; it accumulates with a double-step process by the formation of a dislocation network. At high energy, where electronic excitations are favored, the damage profiles are rather flat up to several micrometers; the damage accumulation is monotonous (one step) and occurs through the creation and overlap of ion tracks. These results may be generalized to many nuclear ceramics.     

Formation of spectral characteristics of channeling radiation from 800 to 2000 MeV electrons and positrons in a thin silicon crystal

The influence of the tails of particle trajectories on planar channeling radiation (CR) spectra from relativistic (800-2000 MeV) electrons and positrons in a thin silicon crystal is investigated. It is shown that the trajectory tails significantly change the CR spectra from electrons and positrons in specific parts of the spectra compared to calculations which do not take into account this effect.     

Gamma-rays irradiation effects on polysulfone at high temperature

The temperature dependence of the irradiation effects on polysulfone was studies by measuring the molecular weight, glass transition temperature, gel fraction and evolved gas. Polysulfone was irradiated with gamma-rays at room temperature, 100, 150, 180 and 210 °C. The change of molecular weight distribution and glass transition temperature showed occurrences of a main chain scission at room temperature and cross-linking at high temperature. The decrease of gel dose, the increases of gel fraction and total gas evolution with increasing temperature was observed. The evolution of CO, CO₂ and SO₂ gases increased at high temperature, while yield of evolved H₂ was independent of irradiation temperature. The probability of the cross-linking was clearly increased by irradiation at high temperature above 180 °C, though the chain scission was not changed very much.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

Toward high accuracy in channeling Rutherford backscattering spectrometry analysis

Channeling Rutherford backscattering spectrometry (RBS) has been widely used to quantitatively analyze displacements in monocrystalline solid state thin films. Its accuracy, however, relies on the approach of separating yields contributed by channeled components and by dechanneled components. In this study, efforts have been made to increase accuracy through three major approaches: first, we have considered the stopping power difference between channeled and non-channeled components; second, we have proposed a mathematical formula to describe a smooth transition from single scattering to multiple scattering in describing dechanneling of analyzing beams as a function of displacements; third, we have used an iterative approach to extract yields from dechanneling components without using any predetermined dechanneling cross sections. These novel approaches are expected to increase accuracy in channeling RBS analysis.     

Damages induced by heavy ions in titanium silicon carbide: Effects of nuclear and electronic interactions at room temperature

Thanks to their refractoriness, carbides are sensed as fuel coating for the IVth generation of reactors. Among those studied, the Ti₃SiC₂ ternary compound can be distinguished for its noteworthy mechanical properties: the nanolamellar structure imparts to this material some softness as well as better toughness than other classical carbides such as SiC or TiC. However, under irradiation, its behaviour is still unknown. In order to understand this behaviour, specimens were irradiated with heavy ions of different energies, then characterised. The choice of energies used allowed separation of the effects of nuclear interactions from those of electronic ones.     

HRBS/channeling studies of ultra-thin ITO films on Si

High-resolution Rutherford backscattering spectroscopy (HRBS)/channeling techniques have been utilized for a detailed characterization of ultra-thin indium tin oxide (ITO) films and to probe the nature of the interface between the ITO film and the Si(0 0 1) substrate. Channeling studies provide a direct measure of the lattice strain distribution in the crystalline Si substrate in the case of amorphous over layers. The measurements on DC magnetron sputtered ITO films have been carried out using the recently installed HRBS facility at the Centre for Ion Beam Applications (CIBA). The thickness of the ultra-thin (∼9.8 nm) ITO films was calculated from the HRBS spectra having an energy resolution of about 1.4 keV at the superimposed leading (In + Sn) edge of the ITO film. The films were near stoichiometric and the interface between ITO film and Si was found to include a thin SiO_x transition layer. The backscattering yields from (In + Sn) of ITO were equal in random and channeling directions, thereby revealing the non-crystalline nature of the film. Angular scans of HRBS spectra around the off-normal [1 1 1] axis clearly showed a shift in the channeling minimum indicative of compressive strain of the Si lattice at the SiO_x/Si interface. The observed strain was about 0.8% near the interface and decreased to values below our detection limits at a depth of ∼3 nm from the SiO_x/Si interface.     

Ion beam induced defects in solids studied by optical techniques

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems.X- and Y-cut LiNbO₃ crystals implanted with 8 MeV Au³⁺ ions with a fluence of 1 × 10¹⁷ ions/cm² result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold.Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of and aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed.The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10¹⁷ ions/cm² during subsequent high temperature annealing is studied by Raman and Brillouin light scattering.Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10¹⁵ to 250 × 10¹⁵ ions/cm⁻² induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.     

The role of IAEA in coordinating research and transferring technology in radiation chemistry and processing of polymers

The IAEA has been playing a significant role in fostering developments in radiation technology in general and radiation processing of polymers in particular, among its Member States (MS) and facilitate know-how/technology transfer to developing MS. The former is usually achieved through coordinated research projects (CRP) and thematic technical meetings, while the latter is mainly accomplished through technical cooperation (TC) projects. Coordinated research projects encourage research on, and development and practical application of, radiation technology to foster exchange of scientific and technical information. The technical cooperation (TC) programme helps Member States to realize their development priorities through the application of appropriate radiation technology.The IAEA has implemented several coordinated research projects (CRP) recently, including one on-going project, in the field of radiation processing of polymeric materials. The CRPs facilitated the acquisition and dissemination of know-how and technology for controlling of degradation effects in radiation processing of polymers, radiation synthesis of stimuli-responsive membranes, hydrogels and absorbents for separation purposes and the use of radiation processing to prepare biomaterials for applications in medicine.The IAEA extends cooperation to well-known international conferences dealing with radiation technology to facilitate participation of talented scientists from developing MS and building collaborations. The IAEA published technical documents, covering the findings of thematic technical meetings (TM) and coordinated research projects have been an important source of valuable practical information.     

Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis

We have modeled damage creation by an analyzing beam during channeling Rutherford backscattering spectrometry (RBS) analysis. Based on classic scattering theory and the assumption that only a dechanneled ion beam can cause displacements, a chi-square approach is used to fit the modeled spectra with experimental profiles, to extract the dechanneling cross section and the displacement creation efficiency. The study has shown that, for a 2.0 MeV He beam channeled along a Si(1 0 0) axis, the efficiency of defect creation by dechanneled beams is about 8% of the value predicted from the Kichin-Pease model. This suggests a significant dynamic annealing of point defects. The modeling procedure in this work can be used to predict the displacement creation during channeling RBS analysis.     

Radiation cross-linking in ultra-high molecular weight polyethylene for orthopaedic applications

The motivation for radiation cross-linking of ultra-high molecular weight polyethylene (UHMWPE) is to increase its wear resistance to be used as bearing surfaces for total joint arthroplasty. However, radiation also leaves behind long-lived residual free radicals in this polymer, the reactions of which can detrimentally affect mechanical properties. In this review, we focus on the radiation cross-linking and oxidative stability of first and second generation highly cross-linked UHMWPEs developed in our laboratory.