Oxygen defects created in CeO2 irradiated with 200 MeV Au ions

CeO₂ films were irradiated with 200 MeV Au ions in order to investigate the damages created by electronic energy deposition. In the Raman spectra of the ion-irradiated films, a broad band appears at the higher frequency side of the F_2g peak of CeO₂. The band intensity increases as ion fluence increases. Furthermore, the F_2g peak becomes asymmetric with a low-frequency tail. In order to understand the origin of these spectral changes, an unirradiated CeO₂ film was annealed in vacuum at 1000 °C. By comparing the results for the irradiation and for the annealing, it is concluded that the broad band obtained for irradiated samples contains the peak observed for the annealed sample. The F_2g peak becomes asymmetric with a low-frequency tail by the irradiation as well as the annealing. Therefore, the above-mentioned changes in the Raman spectra caused by 200 MeV Au irradiation is closely related to the creation of oxygen vacancies.     

Measurement of the energy deposition profile for U ions with specific energy 500 and 950 MeV/u in stainless steel and copper targets

The paper presents the results of precision measurements of the total stopping range and energy deposition function of ²³⁸U ions with specific energies E = 500 and 950 MeV/u in stainless steel and copper targets. The experiment was performed at the SIS-18 facility (GSI Darmstadt) in the experimental area Cave A in September 2004-May 2005.The measured energy deposition profiles are compared with calculations using the codes ATIMA, PHITS, SHIELD and SRIM.     

Irradiation effects in an HfO2/MgO/HfO2 tri-layer structure induced by 10 MeV Au ions

In this report, we present radiation damage effects in a thin film, tri-layer structure, HfO₂/MgO/HfO₂. Irradiations were performed with 10 MeV Au ions in a recently developed medium energy ion irradiation facility at Los Alamos National Laboratory, which is described in this paper. Energy deposition by 10 MeV Au ions corresponds to a mixed regime, wherein electronic and nuclear stopping contribute to radiation damage. In this study, we investigated modifications of both surface and bulk properties in order to assess the structural stability of our oxide tri-layers under the severe irradiation conditions employed here. The most dramatic structural changes were observed to occur on the surfaces of the tri-layer samples. Surface features consisted of large craters and spires. The dimensions of these craters and spires exceed those of the individual ion tracks by almost three orders of magnitude. As for the bulk tri-layer structure, our conclusions are that this structure is stable in terms of: (i) resistance to amorphization; (ii) resistance to compositional mixing and (iii) resistance to pronounced nucleation and growth of extended defects. The main effect observed in the tri-layer structure was the transformation of the first HfO₂ layer from a monoclinic to either a tetragonal or cubic form of HfO₂.     

Photoconduction investigations in 75 MeV oxygen ion irradiated kapton-H polyimide

Photoconduction behaviour of 75 MeV oxygen ion irradiated (Fluences: 1.8 × 10¹¹, 1.8 × 10¹² and 1.8 × 10¹³ ions/cm²) kapton-H polyimide film in the visible region has been investigated at different temperatures ranging 400-2500 °C and at various electric fields ranging 40-600 kV/cm. A photoinduced exciton formation is the major source for providing charge carriers through thermolization and field-assisted dissociation processes. An attempt has been made to fit the field dependence of the steady state photocurrent to one of the several possible conduction mechanisms. In the high and low fluence (1.8 × 10¹³ and 1.8 × 10¹¹ ions/cm²) irradiated samples there exists a possibility of Poole-Frankel type of photoconduction mechanism, whereas at intermediate fluence (1.8 × 10¹² ions/cm²) a Schottky type photoconduction mechanism may be operative. The log I_ps versus 1/T plots consist of two straight lines with a knee point around 800-1000 °C. The activation energy estimated from the slope of these lines is field dependent varying from 0.40 to 0.73 eV and 0.18 to 0.23 eV above and below the knee point, respectively. This indicates the presence of more than one type of trapping levels in irradiated kapton-H polyimide.     

Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use

GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 × 10¹⁰ cm⁻² to 1 × 10¹³ cm⁻². Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.     

Effect of 50 MeV Li ion irradiation on electrical, optical and mechanical properties of 4,4′-dimethylbenzophenone

4,4′-Dimethylbenzophenone (DMBP) single crystals were irradiated at room temperature and at liquid nitrogen temperature with 50 MeV Li³⁺ ions at fluences 1 × 10¹² and 1 × 10¹³ ions/cm². The dielectric constant and dielectric loss as a function of frequency of the applied ac field in the range from 20 Hz to 1 MHz and at temperatures ranging from 313 to 353 K were analyzed. The dielectric constant decreases with increase in frequency for all the temperatures. The dielectric constant and dielectric loss increase with fluence. Optical absorption was measured at different conditions. UV-Vis studies reveal the decrease in bandgap. The unirradiated as well as irradiated crystals were characterized by photoluminescence. Ion-induced changes were also studied with respect to their mechanical response using the Vicker’s microhardness technique and parameters including fracture toughness, brittleness index and yield strength are calculated.     

10 MeV Au ion irradiation effects in an MgO-HfO2 ceramic-ceramic (CERCER) composite

Room temperature ion irradiation damage studies were performed on a ceramic composite intended to emulate a dispersion nuclear fuel. The composite is composed of 90-mole% MgO and 10-mole% HfO₂. The as-synthesized composite was found to consist of Mg₂Hf₅O₁₂ (and some residual HfO₂) particles embedded in an MgO matrix. X-ray diffraction revealed that nearly all of the initial HfO₂ reacted with some MgO to form Mg₂Hf₅O₁₂. Ion irradiations were performed using 10 MeV Au³⁺ ions at room temperature over a fluence range of 5 × 10¹⁶-5 × 10²⁰ Au/m². Irradiated samples were characterized using both grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM), the latter using both selected-area electron diffraction (SAED) and micro-diffraction (μD) on samples prepared in cross-sectional geometry. Both GIXRD and TEM electron diffraction measurements on a specimen irradiated to a fluence of 5 × 10²⁰ Au/cm², revealed that the initial rhombohedral Mg₂Hf₅O₁₂ phase was transformed into a cubic-Mg₂Hf₅O₁₂ phase. Finally, it is important to note that at the highest ion fluence used in this investigation (5 × 10²⁰ Au/m²), both the MgO matrix and the Mg₂Hf₅O₁₂ second phase remained crystalline.     

Enhanced susceptibility of CaF2(1 1 1) to adsorption due to ion irradiation

We have investigated morphological changes of freshly cleaved CaF₂(1 1 1) single crystal surfaces before and after ion irradiation. We show that with or without irradiation the surface undergoes serious changes within minutes after the cleavage if the samples are exposed to ambient conditions. This is most likely due to the adsorption of water and could be avoided only if working under clean ultra-high-vacuum conditions. Ion-induced modifications on this surface seem to act as centers for an increased rate of adsorption so that any quantitative numbers obtained by atomic force microscopy in such experiments have to be treated with caution.     

Surface roughness of ion-bombarded Si(1 0 0) surfaces: Roughening and smoothing with the same roughness exponent

We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the roughness of pristine as well as ion-bombarded Si(1 0 0) surfaces and of ultrathin Ge films deposited on them. One half of a Si(1 0 0) sample (with native oxide layer) was irradiated at room temperature using 45 keV Si⁻ ions at a fluence of 4 × 10¹⁵ ions/cm² while the other half was masked. STM measurements were then carried out on the unirradiated as well as the irradiated half of the sample. Root-mean-square (rms) roughness of both the halves of the sample has been measured as a function of STM scan size. Below a length scale of ∼30 nm we observe surface smoothing and surface roughening is observed for length scales above this value. However, the surface is self-affine up to length scales of ∼200 nm and the observed roughness exponent of 0.46 ± 0.04 is comparable to earlier cases of ion sputtering studies where only roughening [J. Krim, I. Heyvart, D.V. Haesendonck, Y. Bruynseraede, Phys. Rev. Lett. 70 (1993) 57] or only smoothing [D.K. Goswami, B.N. Dev, Phys. Rev. B 68 (2003) 033401] was observed. Preliminary results involving morphology for Ge deposition on clean ion-irradiated and pristine Si(1 0 0) surfaces are presented.     

Competition of terrace and step-edge sputtering under oblique-incidence ion impact on a stepped Pt(1 1 1) surface

Using molecular-dynamics simulation, we study the sputtering of a Pt(1 1 1) surface under oblique and glancing incidence 5 keV Ar ions. For incidence angles larger than a critical angle ?_c, the projectile is reflected off the surface and the sputter yield is zero. We discuss the azimuth dependence of the critical angle ?_c with the help of the surface corrugation felt by the impinging ion. If a step exists on the surface, sputtering occurs also for glancing incidence ?>?_c. We demonstrate that for realistic step densities, the total sputtering of a stepped surface may be sizable even at glancing incidence.     

Stopping force of 0.5-3.5 MeV/u Cl ions in polymers

The stopping force of Cl ions in LR-115 and Kapton polymers, at energies 0.5-3.5 MeV/u, has been measured. These measurements have been performed using 15UD Pelletron accelerator facility at Inter University Accelerator Centre, New Delhi, India. The measured stopping force values have been compared with the corresponding computed values based on the semi-empirical formulations viz. Ziegler et al., Paul and Schinner, Hubert et al., Diwan et al., and standard data tables viz. Northcliffe and Schilling, ICRU-73 report. The aim of the present study is to measure stopping force around Bragg’s peak and to check the compatibility of the widely used semi-empirical formulations and standard data tables through comparison with the experimentally measured values.     

Radiation damage in ZnO ion implanted at 15 K

Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 × 10¹¹ to 7 × 10¹⁶ cm⁻². The implantation and the subsequent damage analysis by Rutherford backscattering spectrometry (RBS) in channelling geometry were performed in a special target chamber at 15 K without changing the target temperature of the sample. To analyse the measured channelling spectra the computer code DICADA was used to calculate the relative concentration of displaced lattice atoms.Four stages of the damage evolution can be identified. At low ion fluences up to about 2 × 10¹³ cm⁻² the defect concentration increases nearly linearly with rising fluence (stage I). There are strong indications that only point defects are produced, the absolute concentration of which is reasonably given by SRIM calculations using displacement energies of E_d(Zn) = 65 eV and E_d(O) = 50 eV. In a second stage the defect concentration remains almost constant at a value of about 0.02, which can be interpreted by a balance between production and recombination of point defects. For ion fluences around 5 × 10¹⁵ cm⁻² a second significant increase of the defect concentration is observed (stage III). Within stage IV at fluences above 10¹⁶ cm⁻² the defect concentration tends again to saturate at a level of about 0.5 which is well below amorphisation. Within stages III and IV the damage formation is strongly governed by the implanted ions and it is appropriate to conclude that the damage consists of a mixture of point defects and dislocation loops.     

Formation of planar waveguide in BiB3O6 crystal by MeV carbon implantation

Non-leaky planar waveguide structure has been fabricated in x-cut BiB₃O₆ crystal by 6 MeV C³⁺ ion implantation at a dose of 1 × 10¹⁴ ions/cm². The effective refractive indices of the waveguide are measured at a wavelength of 632.8 nm. We perform a computer code based on the finite difference method to reconstruct the refractive index profiles of n_x and n_y of this waveguide. The beam propagation method is used to calculate the electric and magnetic field profiles in the waveguide region from the reconstructed refractive index profiles. Our simulated data show that the refractive index increased waveguide layer can confine the mode completely.     

First results of an experimental study of the residual activity induced by high-energy uranium ions in steel and copper

First results of an experimental study of the residual activity induced by high-energy uranium ions are presented. As a preparatory work for constructing the FAIR facility at GSI, samples of stainless steel and copper were irradiated by 500 MeV/u ²³⁸U ions and investigated by gamma-ray spectroscopy. The isotopes that contribute dominantly to the residual activity have been identified and their contributions have been quantified. Depth-profiles of residual activity of individual isotopes have shown that target activation due to projectile fragments and neutrons extends far beyond the range of primary particles and reaches the same level as in the region irradiated by primary particles.     

Photoneutron interrogation of low-enriched uranium induced by bremsstrahlung from a 4 MeV linac

Revealing smuggled nuclear material by passive γ-detection is hindered, because the weak radiation can easily be shielded. Neutrons, as penetrate shielding, represent a detection potential, by inducing fission in the nuclear material. A 4 MeV linear accelerator was used as a pulsed neutron source for active interrogation of U-bearing material. Produced in heavy water by bremsstrahlung, neutrons subsequently induced fissions in UO₂ samples. Delayed fission neutrons were detected in a neutron collar built up by ³He counters in a polyamide container. The counters were gated to be detached from high voltage during the electron pulse. Irradiation-measurement cycles were carried out with a 25 Hz pulse repetition rate as optimum setting. The time analyser start-up was externally triggered and synchronised by the electron beam pulse. The response of the system was studied as a function of the intensity of the electron current, the amount of heavy water, U enrichment, and total U content. Sensitivity limit was achieved as 0.5 g ²³⁵U and/or 30 g ²³⁸U in a 20 s measurement time (500 cycles) with the amount of heavy water of 100 g and a mean electron current of 2 μA. Because of the long decay time of the prompt (interrogating and fission) neutron pulse, about a half of the time interval (40 ms) between pulses is only available for counting delayed neutrons.     

Neutron induced damage in reactor pressure vessel steel: An X-ray absorption fine structure study

The radiation damage produced in reactor pressure vessel (RPV) steels during neutron irradiation is a long-standing problem of considerable practical interest. In this study, an extended X-ray absorption fine structure (EXAFS) spectroscopy has been applied at Cu, Ni and Mn K-edges to systematically investigate neutron induced radiation damage to the metal-site bcc structure of RPV steels, irradiated with neutrons in the fluence range from 0.85 to 5.0 × 10¹⁹ cm⁻². An overall similarity of Cu, Ni and Mn atomic environment in the iron matrix is observed. The radial distribution functions (RDFs), derived from EXAFS data have been found to evolve continuously as a function of neutron fluence describing the atomic-scale structural modifications in RPVs by neutron irradiations. From the pristine data, long range order beyond the first- and second-shell is apparent in the RDF spectra. In the irradiated specimens, all near-neighbour peaks are greatly reduced in magnitude, typical of damaged material. Prolonged annealing leads annihilation of point defects to give rise to an increase in the coordination numbers of near-neighbour atomic shells approaching values close to that of non-irradiated material, but does not suppress the formation of nano-sized Cu and/or Ni-rich-precipitates. Total amount of radiation damage under a given irradiation condition has been determined. The average structural parameters estimated from the EXAFS data are presented and discussed.     

HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions

In_0.15Ga_0.85N/GaN bilayers irradiated with 2.3 MeV Ne and 5.3 MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1 × 10¹² to 1 × 10¹⁵ cm⁻², and the Kr ion fluences were in the range from 1 × 10¹¹ to 1 × 10¹³ cm⁻². Results show that the structures of both In_0.15Ga_0.85N and GaN layers remained almost unchanged for increasing fluences up to 1 × 10¹³ and 1 × 10¹² cm⁻² for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In_0.15Ga_0.85N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In_0.15Ga_0.85N layers are discussed.     

Investigation by slow positron beam of defects in CLAM steel induced by helium and hydrogen implantation

Hydrogen and helium ion beams delivering different doses are used in the ion implantation, at room temperature, of China Low Activation Martensitic (CLAM) steel and the induced defects studied by Doppler broadening of gamma-rays generated in positron annihilation. Defect profiles are analysed in terms of conventional S and W parameters, measures of relative contributions of low and high-momentum electrons in the annihilation peak, as functions of incident positron energies E up to 30 keV. The behaviours of the S-E, W-E and S-W plots under different implantation doses indicate clearly that the induced defect size has obvious variation with depth, taking values that interpolate between surface and bulk values, and depend mainly on helium ion fluences. The S-W plot indicates that two types of defects have formed after ion implantation.     

Experimental study and simulation of the residual activity induced by high-energy argon ions in copper

The paper presents new experimental results and FLUKA-simulations of residual activation induced by high-energy argon ions in copper. It follows the previous residual activation studies performed at GSI Helmholtzzentrum für Schwerionenforschung in Darmstadt with uranium ions as a preparatory work for constructing the FAIR facility. Copper samples were irradiated by 1 GeV/u and 500 MeV/u ⁴⁰Ar ions and investigated by gamma-ray spectroscopy. The samples were irradiated in the stacked-foil geometry. The isotopes with dominating contribution to the total residual activity were identified and their partial activities were quantified. Depth-profiling of the partial residual activities of all identified isotopes was performed by measurements of individual target foils. The experimental results were compared with simulations by the FLUKA-code. A satisfactory agreement between the experiment and the simulations was observed.     

Evidence of nanostructure formation in Ge oxide by crystallization induced by swift heavy ion irradiation

Ge oxide films were irradiated with 150 MeV Ag ions at fluences varying between 10¹² and 10¹⁴ ions/cm². The irradiation-induced changes were monitored by FT-IR spectroscopy, atomic force microscopy, X-ray diffraction and photoluminescence spectroscopy. The FT-IR spectra indicate stoichiometric changes and an increase in Ge content on irradiation. X-ray diffraction shows a crystallization of the irradiated films and presence of both Ge and GeO₂ phases. The Ge nanocrystal size, as calculated from Scherrer’s formula, was around 30 nm. The morphological changes, observed in atomic force microscopy, also indicate formation of nanostructures upon ion irradiation and a uniform growth is observed for a fluence of 1 × 10¹⁴ ions/cm².