Fabrication of hollow nanoclusters by ion implantation

Ag ions with four kinds of energies were implanted into silica to doses of 5 × 10¹⁶ and 1 × 10¹⁷ ions/cm², respectively. Hollow Ag nanoclusters were observed in the 1 × 10¹⁷ Ag⁺ ions/cm² implanted samples with energies of 150 and 200 keV. The evolution of hollow nanoclusters during annealing was carried out by in situ transmission electron microscopy observation. The energy dependence for the formation of hollow nanoclusters is studied. A potential mechanism for the formation of irradiation-induced nanovoids in nanoclusters is discussed.     

Effect of swift heavy ion irradiation on spray deposited CdX (X = S, Te) thin films

Cadmium sulfide and cadmium telluride thin films are irradiated with high energy heavy ion beam to study the irradiation induced effects in these films. The polycrystalline thin film samples deposited by spray pyrolysis are irradiated with 60 MeV Oxygen ions using tandem Pelletron accelerator. The X-ray diffraction patterns exhibit a reduction in peak intensities in both CdS and CdTe films. The grain size decrease with fluence is observed for both CdS and CdTe films, with more decrease for CdTe films. The AFM results support this observation. The films show opposite trend in the variation of electrical resistivity with irradiation fluence. A decrease in resistivity is observed for CdS films due to an increase of carrier concentration arising by the creation of sulfur vacancies during the irradiation. The creation of sulfur vacancies is confirmed by XPS studies. The stoichiometric changes seen from XPS studies support this observation. An enhancement of grain boundary scattering due to the reduction of grain size leads to the increase of electrical resistivity for CdTe films.     

40 keV He离子注入单晶Si引起的损伤效应研究

室温下使用40 keV He离子注入单晶Si样品到剂量5×1016 cm-2,分别采用透射电子显微镜(TEM)、热解吸谱仪(THDS)、光致发光谱仪(PL)详细地研究了随后热处理过程中He注入空腔的形成、He气体原子的热释放以及注入损伤引起的光致发光特性.结果表明,He离子注入及随后的高温热处理会在单晶Si中产生宽度约为220 nm的空腔带,同时伴随着He气体原子从注入产生的缺陷中释放出来.He气体原子的热释放可以明显地分为两个温度阶段,分别对应于He原子从小的空位型缺陷和大的空腔中的热释放.此外,He离子的注入还会在单晶Si中产生明显发光中心,导致了波长约为680 nm和930 nm的两个光致发光带.该光致发光带的出现可能跟He离子注入及退火过程中产生的纳米Si团簇有关.     

Formation of InAs nanocrystals in Si by high-fluence ion implantation

We have studied the formation of InAs precipitates with dimensions of several nanometers in silicon by means of As (245 keV, 5 × 10¹⁶ cm⁻²) and In (350 keV, 4.5 × 10¹⁶ cm⁻²) implantation at 500 °C and subsequent annealing at 900 °C for 45 min. RBS, SIMS, TEM/TED, RS and PL techniques were used to characterize the implanted layers. The surface density of the precipitates has been found to be about 1.2 × 10¹¹ cm⁻². Most of the crystallites are from 3 nm to 6 nm large. A band at 1.3 μm has been registered in the low-temperature PL spectra of (As + In) implanted and annealed silicon crystals. The PL band position follows the quantum confinement model for InAs.     

Post-annealing effects on the shallow-junction characteristics caused by high-fluence 77 keV BSi molecular ion implantations at room and liquid nitrogen temperatures

In this study, n-type <1 0 0> silicon specimens were liquid nitrogen temperature (LT) and room temperature (RT) implanted with 2 × 10¹⁵ cm⁻² 77 keV BSi molecular ions to produce shallow junctions. Post-annealing methods under investigation included furnace annealing (FA) at 550 °C for 0.5, 1, 2, 3 and 5 h and rapid thermal annealing (RTA) at 1050 °C for 25 s. Post-annealing effects on the shallow-junction characteristics were examined using one-step (FA) and two-step (FA + RTA) post-annealing treatments. Secondary ion mass spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), a four-point probe and Raman scattering spectroscopy (RSS) were employed to analyze junction depths (x_j), damage microstructures, sheet resistance (R_s) and damage characteristics, respectively. The results revealed that the shallow-junction characteristics of the LT implant are better than those of the RT one when post-annealing time in FA exceeds 1 h. A post-annealing time of 3 h in FA is needed in order to obtain the optimal one- or two-step post-annealing effects on the shallow-junction characteristics in both the LT and RT implants.     

900 keV gold ion sputter etching of silicon and metals

Au ions (900 keV) have been used to directly sputter etch microstructures in silicon, aluminum, copper and silver. The results presented clearly demonstrate that high energy heavy ions can be used to fabricate microstructures in selected metals and silicon in a single step process.     

Microstructural investigation of alumina implanted with 30 keV nitrogen ions

Among ceramics, alumina is being widely used as biomaterials now these days. It is being used as hip joints, tooth roots etc. Ion implantation has been employed to modify its surface without changing it bulk properties. 30 keV nitrogen with varying ion dose ranging from 5 × 10¹⁵ ions/cm² to 5 × 10¹⁷ ions/cm² is implanted in alumina. Surface morphology has been studied with optical microscope and atomic force microscope (AFM). Improvement in brittleness has been observed with the increase in ion dose. Compound formation and changes in grain size have been studied using X-Ray diffraction (XRD). AlN compound formation is also observed by Fourier transform infrared spectroscopy (FTIR). The change in the grain size is related with the nanohardness and Hall-Petch relationship is verified.     

Damage creation in ion irradiated Si1−xGex/Si structures

Strained SiGe/Si structures have been proposed as substrates for fabrication of high speed metal oxide semiconductor transistors. However, influence of strain and/or presence of Ge atoms on damage creation during ion irradiation have not been explored to a significant extent. In this study, Rutherford backscattering spectrometry (RBS) was used to characterize Si_1−xGe_x/Si structures irradiated by 140 keV He⁺ ions at room temperature. When compared with pure Si, strained samples show enhanced damage accumulation as a function of He fluence. Channeling angular scans did not reveal any specific configuration of displacements. Possible mechanisms for enhanced damage in strained Si are discussed.     

Irradiation induced dislocation loop and its influence on the hardening behavior of Fe-Cr alloys by an Fe ion irradiation

Nano indentation analysis and transmission electron microscopy observation were performed to investigate a microstructural evolution and its influence on the hardening behavior in Fe-Cr alloys after an irradiation with 8 MeV Fe⁴⁺ ions at room temperature. Nano indentation analysis shows that an irradiation induced hardening is generated more considerably in the Fe-15Cr alloy than in the Fe-5Cr alloy by the ion irradiation. TEM observation reveals a significant population of the a₀<1 0 0> dislocation loops in the Fe-15Cr alloy and an agglomeration of the 1/2a₀<1 1 1> dislocation loops in the Fe-5Cr alloy. The results indicate that the a₀<1 0 0> dislocation loops will act as stronger obstacles to a dislocation motion than 1/2a₀<1 1 1> dislocation loops.     

Angular spectra of rainbow scattering at glancing keV He bombardment of NiAl(1 0 0) surface with transverse energies in the range 1-10 eV

Previous simulations of glancing incidence ion-surface interaction have demonstrated that classical dynamics using the row-model have successfully reproduced multimodal azimuthal and polar spectra. These studies have also shown considerable sensitivity to the form of the interatomic potential thus making it a strong test of the validity of such potentials and even allow deduction of the ion-surface potentials. In these simulations the individual pairwise interactions between the projectile and the target atoms have been replaced by cylindrical potentials.Comparison to numerous experimental studies have confirmed the existence of rainbow scattering phenomena and successfully tested the validity of the cylindrical potential used in these simulations. The use of cylindrical potentials avoids stochastic effects due to thermal displacements and allows faster computer simulations leading to reliable angular distributions.In the present work we extend the row-model to consider scattering from binary alloys. Using He⁺ scattered at glancing incidence from NiAl surfaces, Al or Ni terminated, a faster method has been developed to easily and accurately quantize not only the maximum deflection azimuthal angle but all the singular points in the angular distribution. It has been shown that the influence of the surface termination on the rainbow angle and the inelastic losses is small.     

Implantation effects of low energy H and D ions in germanium at −120 °C and room temperature

Germanium was implanted with 5 keV H and D ions at −120 °C or room temperature and thermally annealed in several steps. The samples were analysed at various stages by atomic force microscopy, ion channeling and Raman spectroscopy of Ge-H/D local vibration modes. The results are discussed in comparison with those in the well studied silicon. In general, the evolution of the different types of defects, in germanium at a given temperature, tends to be similar to that of the corresponding defects in silicon at 100-300 °C higher temperature. However, the behaviour of the defects detected by ion channeling (interstitials, lattice distortions) often appears unrelated to the chemical evolution measured by Raman scattering and to the temperature and isotope dependence of blistering.     

Surface roughness of ion-bombarded Si(1 0 0) surfaces: Roughening and smoothing with the same roughness exponent

We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the roughness of pristine as well as ion-bombarded Si(1 0 0) surfaces and of ultrathin Ge films deposited on them. One half of a Si(1 0 0) sample (with native oxide layer) was irradiated at room temperature using 45 keV Si⁻ ions at a fluence of 4 × 10¹⁵ ions/cm² while the other half was masked. STM measurements were then carried out on the unirradiated as well as the irradiated half of the sample. Root-mean-square (rms) roughness of both the halves of the sample has been measured as a function of STM scan size. Below a length scale of ∼30 nm we observe surface smoothing and surface roughening is observed for length scales above this value. However, the surface is self-affine up to length scales of ∼200 nm and the observed roughness exponent of 0.46 ± 0.04 is comparable to earlier cases of ion sputtering studies where only roughening [J. Krim, I. Heyvart, D.V. Haesendonck, Y. Bruynseraede, Phys. Rev. Lett. 70 (1993) 57] or only smoothing [D.K. Goswami, B.N. Dev, Phys. Rev. B 68 (2003) 033401] was observed. Preliminary results involving morphology for Ge deposition on clean ion-irradiated and pristine Si(1 0 0) surfaces are presented.     

Implantation of anatase thin film with 100 keV Fe ions: Damage formation and magnetic behaviour

We have investigated the damage morphology and magnetic properties of titanium dioxide thin films following implantation with Fe ions. The titanium dioxide films, having a polycrystalline anatase structure, were implanted with 100 keV ⁵⁶Fe⁺ ions to a total fluence of 1.3 × 10¹⁶ ions/cm². The ion bombardment leads to an amorphized surface with no indication of the presence of secondary phases or Fe clusters. The ion-beam induced damage manifested itself by a marked change in surface morphology and film thickness. A room temperature ferromagnetic behaviour was observed by SQUID in the implanted sample. It is believed that the ion-beam induced damage and defects in the polycrystalline anatase film were partly responsible for the observed magnetic response.     

Quantum interference in grazing scattering of swift He atoms from LiF(0 0 1) surfaces: Surface eikonal approximation

This work deals with the interference effects recently observed in grazing collisions of few-keV atoms with insulator surfaces. The process is studied within a distorted-wave method, the surface eikonal approximation, based on the use of the eikonal wave function and involving axial channeled trajectories with different initial conditions. The theory is applied to helium atoms impinging on a LiF(0 0 1) surface along the 〈1 1 0〉 direction. The role played by the projectile polarization and the surface rumpling is investigated. We found that when both effects are included, the proposed eikonal approach provides angular projectile spectra in good agreement with the experimental findings.     

Temperature-dependent surface modification of InSb(0 0 1) crystal by low-energy ion bombardment

Structural and compositional modification of InSb(0 0 1) single crystal surfaces induced by oblique incidence 2-5 keV Ar and Xe ion irradiation have been investigated by means of scanning tunneling and atomic force microscopies, and time-of-flight mass spectroscopy of secondary ion emission. In general, ion-induced patterns (networks of nanowires, or ripples) are angle of incidence- and fluence-dependent. Temperature dependences (from 300 to 600 K) of the RMS roughness and of the ripple wavelength have been determined for the samples bombarded with various fluences. Secondary ion emission from an InSb(0 0 1) surface exposed to 4.5 keV Ar⁺ ions has been investigated with a linear TOF spectrometer working in a static mode. Mass spectra of the sputtered In⁺, Sb⁺ and In₂⁺ secondary ions have been measured both for the non-bombarded (0 0 1) surface and for the surface previously exposed to a fluence of 10¹⁶ ions/cm². In⁺ and In₂⁺ intensities for the irradiated sample are much higher in comparison to the non-bombarded one, whereas Sb⁺ ions show a reversed tendency. This behavior suggests a significant In-enrichment at the InSb(0 0 1) surface caused by the ion bombardment.     

He(1s) angular distributions simulations for He(1s) on Al(1 1 1) collisions in the keV energy range at grazing incidences

We have calculated charge fractions and angular distributions of scattered He atoms resulting from the interaction of keV He⁺ beams at grazing incidences with an Al(1 1 1) surface. Several improvements over our earlier approaches have been incorporated. These are a more sophisticated RPA image potential for the ion-metal interaction as well as kinematic factors affecting the static rates for the Auger transfer mechanisms. For interaction cases in which both perpendicular and parallel velocities are low, we obtain angular distributions which have a better agreement with the experimental data than our earlier version of the theory, although still the theoretical results do not reach total neutralization of the beam as the experimental results show.     

Assessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si

The main assumption of existing efficient topography simulations is that sputtering is a local process that depends only on the angle of incidence and not on the detailed shape of the surface. If redeposition is considered, sputtered atoms are redeposited and cause no further sputtering when they hit another part of the surface. Furthermore the angular distribution of sputtered atoms follows a cosine law. If ion reflection is considered, ions do not lose energy during backscattering. Using binary collision simulations (IMSIL) and comparing them with results obtained by a topography simulator (IonShaper^®) we show that all these assumptions need refinement for the simulation of nanostructures except the neglect of sputtering by sputtered atoms. In addition we show that a nonlocal model is essential for ion beam induced deposition of narrow structures.     

Tailoring optical and electrical properties of MgO thin films by 1.5 MeV H implantation to fluences

Thin films of magnesia (MgO) with (1 0 0) dominant orientations were implanted with 1.5 MeV H⁺ ions at room temperature to various fluences of 10¹³, 10¹⁴ and 10¹⁵ ions/cm². X-ray analysis unambiguously showed crystallinity even after a peak damage fluence of 10¹⁵ ions/cm². Rutherford backscattering spectrometry combined with ion channeling (RBS/C) was used to analyze radiation damages and defect distributions. Optical absorption band observed at 5.7 eV in implanted films was assigned to the anion vacancies and the defect was completely disappeared on annealing at 450 °C. Number of F-type defects estimated was 9.42 × 10¹⁵ cm⁻² for the film implanted with 10¹⁵ ions/cm². DC electrical conductivity of 4.02 × 10⁻⁴ S cm⁻¹ was observed in the implanted region which was three orders higher than the as-deposited films. In unison, film surface was modified as a result of the formation of aggregates caused by the atomic mixing of native matrix atoms (Mg and O) and precipitated hydrogen.     

1.55 MeV 3He离子辐照单晶Si引起的损伤效应研究

室温下使用1.55 MeV、5×1013-5×1016/cm2注量的3He离子注入单晶Si,采用透射电子显微镜(TEM)观测分析了高温退火后单晶Si中由注入引起的损伤形貌,同时使用核反应分析(NRA)技术研究了3He气体原子的热解吸.结果显示,低注量3He离子注入在Si中产生的缺陷主要为一些小尺寸的位错或位错环;在中等照射剂量,退火导致了气泡和气泡团簇的形成并伴随着高密度的位错环从这些气泡团簇中发射出来;而对于较高的照射剂量,3He离子注入加上随后的高温退火则在离子射程附近产生了一个具有确定边界的空腔带.结合NRA结果对实验现象进行了分析.     

Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si0.8Ge0.2

The damage distributions induced by ultra low energy ion implantation (5 keV Si⁺) in both strained-Si/Si_0.8Ge_0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10¹³ to 1 × 10¹⁵ ions/cm². Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10¹⁴ to 4 × 10¹⁴ ions/cm² while the amorphous width is almost the same in both strained and normal Si.