Si/a-Si core/shell nanowires as nonvolatile crossbar switches

Radial core/shell nanowires (NWs) represent an important class of nanoscale building blocks with substantial potential for exploring fundamental electronic properties and realizing novel device applications at the nanoscale. Here, we report the synthesis of crystalline silicon/amorphous silicon (Si/a-Si) core/shell NWs and studies of crossed Si/a-Si NW metal NW (Si/a-Si x M) devices and arrays. Room-temperature electrical measurements on single Si/a-Si x Ag NW devices exhibit bistable switching between high (off) and low (on) resistance states with well-defined switching threshold voltages, on/off ratios greater than 10(4), and current rectification in the on state. Temperature-dependent switching experiments suggest that rectification can be attributed to barriers to electric field-driven metal diffusion. Systematic studies of Si/a-Si x Ag NW devices show that (i) the bit size can be at least as small as 20 nm x 20 nm, (ii) the writing time is <100 ns, (iii) the retention time is >2 weeks, and (iv) devices can be switched >10(4) times without degradation in performance. In addition, studies of dense one-dimensional and two-dimensional Si/a-Si x Ag NW devices arrays fabricated on crystalline and plastic substrates show that elements within the arrays can be independently switched and read, and moreover that bends with radii of curvature as small as 0.3 cm cause little change in device characteristics. The Si/a-Si x Ag NW devices represent a highly scalable and promising nanodevice element for assembly and fabrication of dense nonvolatile memory and programmable nanoprocessors.     

A nonvolatile plasmonic switch employing photochromic molecules

We demonstrate a surface plasmon-polariton (SPP) waveguide all-optical switch that combines the unique physical properties of small molecules and metallic (plasmonic) nanostructures. The switch consists of a pair of gratings defined in an aluminum film coated with a 65 nm thick layer of photochromic (PC) molecules. The first grating couples a signal beam consisting of free space photons to SPPs that interact effectively with the PC molecules. These molecules can reversibly be switched between transparent and absorbing states using a free space optical pump. In the transparent (signal "on") state, the SPPs freely propagate through the molecular layer, and in the absorbing (signal "off") state, the SPPs are strongly attenuated. The second grating serves to decouple the SPPs back into a free space optical beam, enabling measurement of the modulated signal with a far-field detector. In a preliminary study, the switching behavior of the PC molecules themselves was confirmed and quantified by surface plasmon resonance spectroscopy. The excellent (16%) overlap of the SPP mode profile with the thin layer of switching molecules enabled efficient switching with power densities of approximately 6.0 mW/cm2 in 1.5 microm x 8 microm devices, resulting in plasmonic switching powers of 0.72 nW per device. Calculations further showed that modulation depths in access of 20 dB can easily be attained in optimized designs. The quantitative experimental and theoretical analysis of the nonvolatile switching behavior in this letter guides the design of future nanoscale optically or electrically pumped optical switches.     

All-optical 1 x N switching device by use of the phase modulation of spatial solitons

We proposed a new all-optical switching device by using the phase modulation of spatial solitons. The proposed structure is composed of an asymmetric nonlinear Mach-Zehnder interferometer (NMZI) with different lengths for the two arms, the uniform nonlinear medium, and the nonlinear output waveguides. The asymmetric NMZI functions like a phase shifter. The all-optical switching scheme employs angular deflection of spatial solitons controlled by phase modulation created in the asymmetric NMZI. By properly launching the input power and varying the lengths of the delay branch and the uniform nonlinear medium, it is possible for this device to be generalized to a 1 x N all-optical switching device.     

Electrically Controlled Nano and Micro Actuation in Memristive Switching Devices with On‐Chip Gas Encapsulation

Nanoactuators are a key component for developing nanomachinery. Here, an electrically driven device yielding actuation stresses exceeding 1 MPa withintegrated optical readout is demonstrated. 10 nm thick Al₂O₃ electrolyte films are sandwiched between graphene and Au electrodes. These allow reversible room‐temperature solid‐state redox reactions, producing Al metal and O₂ gas in a memristive‐type switching device. The resulting high‐pressure oxygen micro‐fuel reservoirs are encapsulated under the graphene, swelling to heights of up to 1 µm, which can be dynamically tracked by plasmonic rulers. Unlike standard memristors where the memristive redox reaction occurs in single or few conductive filaments, the mechanical deformation forces the creation of new filaments over the whole area of the inflated film. The resulting on–off resistance ratios reach 10⁸ in some cycles. The synchronization of nanoactuation and memristive switching in these devices is compatible with large‐scale fabrication and has potential for precise and electrically monitored actuation technology.     

A dual-way directional surface-plasmon-polaritons launcher based on asymmetric slanted nanoslits

We theoretically design a device composed of two asymmetric slanted nanoslits to achieve the directionality of surface plasmon polaritons (SPPs). With proper inclination of the two slits, the desirable relative phase delay can be obtained. When the structure is illuminated by normal incident light, the SPPs can be controlled to deflect the specific direction due to light interference. The SPPs can be altered to the opposite direction when the illuminating light is changed inversely. We develop another way to tailor the relative phase delay by choosing the specific effective index for each slanted slit. In order to acquire higher directional excitation efficiency, our designs have been extended to periodic structures with the pairs of slanting slits. The finite element method is carried on to verify our designs. The simulations show that the best proportion of the SPP field intensity along two opposite directions reaches to around 30.     

Fast response and low power consumption 1×2 thermo-optic switch based on dielectric-loaded surface plasmon polariton waveguides

Abstract

In this paper, we present a 1 × 2 thermo-optic (TO) switch based on the integration of the dielectric-loaded surface plasmon polariton (SPP) waveguides with the silicon nanowires. Liquid-curable fluorinated resin (LFR) made of perfluorinated polymer was adopted as the ridge, which has a TO coefficient twice more than that of polymethyl methacrylate, leading to a significant decrease in the power consumption. It was shown that the response time of the dielectric-loaded SPP waveguide could be improved through optimizing the dimensions of the LFR polymer ridge without loss of relative high figure of merit and large confinement factor. Performance characteristics of such a 1 × 2 TO switch operating at a telecom wavelength of 1550 nm was investigated theoretically from the analysis of both heat and optical fields. The results reveal that a switching power as low as 7 mW and an extremely short switching time (with rise time of 3 μs and fall time of 6.7 μs) could be achieved with the proposed dielectric-loaded SPP-based 1 × 2 TO switch. In addition, the crosstalk could be enhanced to at least 40 dB with the applied power of 7 mW at the wavelength of 1550 nm, and it could be retained to be above 20 dB in the wavelength spectrum of 1500–1600 nm during the on/off state.     

Approximate model for surface-plasmon generation at slit apertures

We present a semianalytical model that quantitatively predicts the scattering of light by a single subwavelength slit in a thick metal screen. In contrast to previous theoretical works related to the transmission properties of the slit, the analysis emphasizes the generation of surface plasmons at the slit apertures. The model relies on a two-stage scattering mechanism, a purely geometric diffraction problem in the immediate vicinity of the slit aperture followed by the launching of a bounded surface-plasmon wave on the flat interfaces surrounding the aperture. By comparison with a full electromagnetic treatment, the model is shown to provide accurate formulas for the plasmonic generation strength coefficients, even for metals with a low conductivity. Limitations are outlined for large slit widths (>lambda) or oblique incidence (>30 degrees ) when the slit is illuminated by a plane wave.     

Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high‐density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 10⁷, steep turn‐on slope of <8 mV dec⁻¹, and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water‐assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 10⁷ Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays.     

All-optical bistable switching based on photonic crystal slab nanocavity using nonlinear Kerr effect

In this paper, we propose all-optical bistable switching based on a two-dimensional (2D) photonic crystal slab nanocavity using the nonlinear Kerr effect with improved optical properties such as on/off ratio and switching power. The nonlinear properties of different kinds of nanocavity-based L3 structures are characterized. Using the 2D finite-difference time-domain method, we present a new structure of nanocavities for all-optical switching. The device has on/off ratio greater than 15?dB and power smaller than 375?mW for input optical pulses in the range of picoseconds.     

Adiabatic polymer-glass-waveguide all-optical switch

We propose an adiabatic all-optical switch that is composed of an asymmetric Y-branch ion-exchanged glass waveguide with a strip of nonlinear polymer loaded on top of one branch. The properties of nonlinear wave propagation in the device are investigated in detail. By extending the effective-index method to the analysis of nonlinear waveguides, we calculate the nonlinear dispersion curves in successive sections to explain the evolution of normal modes in the device. As the multivalued propagation constants exist in the tapered directional coupler region, the device possesses an abrupt switching behavior and nonreciprocal properties. To demonstrate nonlinear switching behaviors in the Y-branch waveguide further, we employ a beam propagation method to simulate optical-field propagation. The inputs by three different ports are investigated, and the results agree well with the dispersion-curve analysis.     

Probing spin accumulation in Ni/Au/Ni single-electron transistors with efficient spin injection and detection electrodes

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au disks, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain, and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. By use of an atomic force microscope with specially designed software, a single nonmagnetic Au nanodisk is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real time while the Au disk is manipulated step-by-step with angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disk. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few nanoseconds on the spin-relaxation time for electrons in the Au disk. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the single-electron transistors. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum tunneling magnetoresistance of 10%, from which we deduced a spin polarization of about 22% in the Ni electrodes.     

Method for fast-switching the ion beam in an ion-implantation facility

The accuracy to which a desired dopant concentration can be attained through ion implantation depends largely upon the time constant for switching the ion beam on and off. Different means for switching the ion beam are discussed and a fast-switching device is described. The new device allows for a switching time constant of about 2 ms. During the switching process, no ions of other species can reach the target.     

Electrical switching characteristics of organic thin films made from branch chain substituted oligomer as measured by GaIn probe

In this paper, we report switching behaviors of organic thin films made from branch chain substituted oligomer with device structure of gallium indium eutectic cathode/organic layer(s)/anode (indium tin oxide, highly oriented pyrolytic graphite, copper or doped n-type silicon). The organic active layers were spin-coated from molecular solutions. The device current-voltage characteristics were investigated under ambient conditions, which revealed obvious switching performance of the as-fabricated devices with threshold voltage between 2.5 and 3.2 V and on/off ratio at order of magnitude of 10¹. To understand the switching mechanism, control experiments were carried out by systematically engineering the device active layer structure. The results suggested that the switching may be due to the charge trapping effects taking place in the organic layer.     

Optimization of single-gate carbon-nanotube field-effect transistors

The performance of Schottky-barrier carbon-nanotube field-effect transistors (CNTFETs) critically depends on the device geometry. Asymmetric gate contacts, the drain and source contact thickness, and inhomogenous dielectrics above and below the nanotube influence the device operation. An optimizer has been used to extract geometries with steep subthreshold slope and high I/sub on//I/sub off/ ratio. It is found that the best performance improvements can be achieved using asymmetric gates centered above the source contact, where the optimum position and length of the gate contact varies with the oxide thickness. The main advantages of geometries with asymmetric gate contacts are the increased I/sub on//I/sub off/ ratio and the fact that the gate voltage required to attain minimum drain current is shifted toward zero, whereas symmetric geometries require V/sub g/=V/sub d//2. Our results suggest that the subthreshold slope of single-gate CNTFETs scales linearly with the gate-oxide thickness and can be reduced by a factor of two reaching a value below 100 mV/dec for devices with oxide thicknesses smaller than 5 nm by geometry optimization.     

Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output

We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 10⁶. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.      

Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

2D van der Waals (vdWs) heterostructures exhibit intriguing optoelectronic properties in photodetectors, solar cells, and light‐emitting diodes. In addition, these materials have the potential to be further extended to optical memories with promising broadband applications for image sensing, logic gates, and synaptic devices for neuromorphic computing. In particular, high programming voltage, high off‐power consumption, and circuital complexity in integration are primary concerns in the development of three‐terminal optical memory devices. This study describes a multilevel nonvolatile optical memory device with a two‐terminal floating‐gate field‐effect transistor with a MoS₂/hexagonal boron nitride/graphene heterostructure. The device exhibits an extremely low off‐current of ≈10^?14 A and high optical switching on/off current ratio of over ≈10⁶, allowing 18 distinct current levels corresponding to more than four‐bit information storage. Furthermore, it demonstrates an extended endurance of over ≈10⁴ program–erase cycles and a long retention time exceeding 3.6 × 10⁴ s with a low programming voltage of ?10 V. This device paves the way for miniaturization and high‐density integration of future optical memories with vdWs heterostructures.     

Design,analysis and application of high set-up ZVT DC–DC converter with direct power transfer

In this paper, a new snubber cell for soft switched high set-up DC–DC converters is introduced. The main switch is turned on by zero-voltage transition and turned off by zero-voltage switching (ZVS). The main diode is turned on by ZVS and turned off by zero-current switching. Besides, all auxiliary semiconductor devices are soft switched. Any semiconductor device does not expose the additional current or voltage stress. The new snubber transfers some of the circulation energy to the output side when it ensures soft switching for main semiconductor devices. Thus, the current stress of auxiliary switch is significantly reduced. Besides, the total efficiency of converter is high due to the direct power transfer feature of new converter. A theoretical and mathematical analysis of the new converter is presented, and also verified with experimental set-up at 500 W and 100 kHz. Finally, the overall efficiency of new converter is 97.4% at nominal output power.     

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb₂O₃/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or unipolar. Bipolar behavior exists after the positive forming process, while unipolar behavior exists after the negative forming process. Furthermore, the bipolar switching characteristics of the Pt/Yb₂O₃/TiN device can be affected by using a reverse polarity forming treatment, which not only reduces the set and reset voltage, but also improves the on/off ratio.     

Plasmon-induced transparency in asymmetric T-shape single slit

By utilizing a dielectric-film-coated asymmetric T-shape single slit, comprising two grooves of slightly detuned widths immediately contacting with a single nanoslit, the plasmon-induced transparency was experimentally demonstrated. Because of the symmetry breaking in the unit-cell structure, the scattered lights from the two grooves with slightly detuned widths interfere destructively, leading to the plasmon-induced transparency. As a result, a response spectrum with nearly the same interference contrast but a much narrower bandwidth emerges in the unit-cell structure with the footprint of only about 0.9 μm(2), compared with that in the symmetric T-shape single slit. These pronounced features in the structure, such as the increased quality factor, ultracompact size, easy fabrication, and experimental observation, have significant applications in ultracompact plasmonic devices.     

CMOS compatible nanoscale nonvolatile resistance switching memory

We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), long endurance (10(6)), retention time (5 months), and multibit capability. These key performance metrics compare favorably with other emerging nonvolatile memory techniques. Furthermore, both diode-like (rectifying) and resistor-like (nonrectifying) behaviors can be obtained in the device switching characteristics in a controlled fashion. These results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.