共查询到18条相似文献,搜索用时 140 毫秒
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基于SiGe HBT(异质结双极晶体管)大信号等效电路模型,建立了SiGe HBT大信号发射结扩散电容模型和集电结扩散电容模型.该模型从SiGe HBT正反向传输电流出发,研究晶体管内可动载流子所引起的存储电荷(包括正向存储电荷和反向存储电荷)的基础上,同时考虑了厄利效应对载流子输运的影响,其物理意义清晰,拓扑结构简单。将基于大信号扩散电容模型的SiGe HBT模型嵌入PSPICE软件中,实现对SiGe HBT器件与电路的模拟分析。对该模型进行了直流特性模拟分析,直流模拟分析结果与文献报道的结果符合得较好,瞬态特性分析结果表明响应度好。 相似文献
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Early效应作为表征双极器件关键性能的因素之一,影响输出跨导、传输电流、基区渡越时间、电流增益、扩散电容等器件特性。本文从Early效应的基本定义出发,综述了Early电压的起源,模型的发展及其在Si和SiGe电路仿真器中的应用。具体为:(1)综述了Si三极管中的基本模型及在SPICE中处理过程,然后针对SPICE的缺陷,描述了VBIC模型中针对Early效应的改进。(2)由于SPICE和VBIC不能有效描述SiGe HBT中基区Ge组分引入。本文基于SiGe HBT标准化模型Mextram、HICUM对SiGe HBT的建模思想,综述了将其用于建立Early电压模型的方法。(3)总结了现有主流模型对Early效应的建模方法及优缺点。 相似文献
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Fregonese S. Avenier G. Maneux C. Chantre A. Zimmer T. 《Electron Devices, IEEE Transactions on》2006,53(2):296-303
Heterojunction bipolar transistor (HBT) fabrication on thin-film silicon-on-insulator (SOI) has been recently demonstrated. Due to the space volume constraint (thin film) for the device fabrication, the HBT structure is different from bulk HBT. In fact, compared to a bulk device, the buried layer has been suppressed and a lateral collector contact configuration is introduced. This device features a vertical expansion followed by a lateral expansion of the base-collector space charge region. This nonconventional charge behavior induces a kink in the base-collector junction capacitance characteristics, and as a consequence a modified Early effect. Furthermore, the low current transit time is modified compared to a bulk HBT. In this paper, all these effects are analyzed and a compact model for SOI-HBT is proposed. The model is validated on real SOI-HBTs with different collector doping levels. 相似文献
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对现代的双极型晶体管而言,载流子在基极和集电极的空间电荷区(CB SCR)传输延迟可比基极渡越时间,甚至要大于后者。为了更精确地表征了SiGe HBT的射频噪声性能,对van Vliet模型做了扩展,使其包含基极集电极空间电荷区的延迟效应。用2个与噪声相关的延迟时间对transport模型进行了扩展,使得在没有非准静态Y参数的情况下仍然可以对基极和集电极电流噪声进行精确建模。最后,在JC=12.2 mA/μm2,AE=0.12×18μm2条件下,分别对2种模型的基极和集电极噪声电流谱及其归一化相关系数做图并与计算得出的解析值相比较,验证了模型的有效性。 相似文献
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The thermal stability of an SiGe base HBT is closely related to the integrated Ge content in the base. It is therefore appropriate to consider what form the Ge profile should take to minimise the base transit time tau /sub B/ for a given total Ge content. It is shown that a linear increase in Ge content from the base-emitter to the base-collector junction is required to minimise.<> 相似文献
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DAI Guang-hao WANG Sheng-rong LI Wen-jie 《半导体光子学与技术》2006,12(3):150-152,193
Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer (BOX) can reduce collector-base capacitance CCB with the maximum value 89.3%, substrate-base capacitance CSB with 94. 6%, and the maximum oscillation frequency is improved by 2.7. The SOl structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications. 相似文献
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Kahn M. Blayac S. Riet M. Berdaguer Ph. Dhalluin V. Alexandre F. Godin J. 《Electron Device Letters, IEEE》2003,24(7):430-432
The influence of base thickness reduction on performances of heterojunction bipolar transistors (HBTs) is examined. HBT structures are grown, with a base thickness in the range 25-65 nm and doping concentration from 3/spl times/10/sup 19/ to 6/spl times/10/sup 19/ at/cm/sup 3/. Base transit time is accurately extracted from total base-collector transit time, and described using a simple drift-diffusion approach. This model, however basic, shows very good agreement with measurements when usual parameter values are used. A 0.13-ps transit time reduction is measured when thinning the base from 65 to 25 nm. The thinnest base structure presents a 0.08 ps transit time, allowing a 250 GHz f/sub t/ operation at 270 kA/cm/sup 2/ emitter current density. 相似文献
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We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBT and homojunction silicon NPM BJT structures. Based on our simulation results, it is observed that while both the lateral NPM and NPN HBTs exhibit high current gain, high cut-off frequency compared to the homojunction NPN BJT, the lateral NPM HBT has the additional benefit of suppressed Kirk effect and excellent transient response over its counterpart lateral NPN HBT. The improved performance of the proposed NPM HBT is discussed in detail and a CMOS compatible process is suggested for its fabrication. 相似文献