Linux环境下基于I2C总线的EEPROM驱动程序

I2C总线是由Philips公司开发的用于器件之间连接的2线式双向同步串行总线.Linux内核中针对I2C总线的特性,其设备驱动使用了一种特殊的体系结构.介绍了MPC8250处理器上I2C总线控制器的工作原理,并分析了Linux中I2C总线驱动的体系结构,以MPC8250上的I2C总线为例,给出了I2C总线EEPROM驱动程序的设计方法.     

Linux下基于I^2C协议的RTC驱动开发

在嵌入式中,IAnux浙渐成为一种流行探作系统,Linux驱动开发也成为嵌入式开发中的必备环节.介绍Linux环境下基于I2C协议的RTC驱动程序开发与实现.首先研究了Linux环境下字符设备驱动程序框架,然后介绍I2C协议,在此基础上开发基于I2C协议的RTC字符设备驱动程序.对于驱动程序,这里详细介绍其整体架构和各模块实现细节.最终成功实现了基于I2C协议的RTC驱动程序,并移植到Linux操作系统中.     

Linux系统下基于I^2C接口的数据通信的实现

介绍在Linux系统下I2C总线结构、驱动编写以及I2C总线的软、硬件实现方式,并介绍了多线程技术在驱动调用过程中的应用。该方案已在以MPC850芯片为核心的监控平台上实现。     

嵌入式Linux系统中I2C总线设备的驱动设计

本文分析了Linux系统中I2C驱动程序的结构,并以AT91RM9200和X1227为例,介绍了如何在嵌入式Linux系统中实现I2C总线适配器及I2C设备驱动.     

基于嵌入式Linux的网络设备驱动程序的开发

设备驱动是Linux系统的重要组成部分,它在硬件和终端之间建立了标准的接口,大大简化了驱动的开发难度.文中在介绍了Linux下设计设备驱动的基本方法的基础上,分析了自主开发的基于ARM7DMI为内核的S3C44B0X处理器下的Linux网络设备驱动.     

基于ARM-Linux平台的USB数据存储设计与实现

ARM单片机搭载嵌入式Linux系统可以作为手持终端完成一些PC机上较为复杂的交互应用。文中主要介绍在ARM-Linux平台下基于Libusb库驱动USB控制芯片CY7C68013实现数据存储的基本方法。该方法实现了在ARM-Linux平台下基于Libusb库在用户空间直接访问USB设备CY7C68013。开发人员无需了解复杂的USB协议与Linux内核机制,通过Libusb库提供的接口函数调用可以实现Linux下USB设备"无驱"开发。     

基于Linux平台的OV2715驱动研究与实现

为了实现嵌入式Linux对CMOS图像传感器OV2715的支持,对OV2715的工作原理进行深入的研究,针对OV2715功能复杂和驱动编写困难的问题,提出一种模块化设计OV2715驱动的方法。在DM3730硬件平台下,将OV2715驱动分为I2C设备驱动和V4L2接口驱动并分别进行了实现,最后,设计视频采集程序并对驱动进行了测试。测试结果表明,输出视频图像质量清晰稳定,该实现在高清数字监控系统中有较好的应用前景。     

嵌入式Linux系统下的USB驱动程序开发

嵌入式Linux系统的应用越来越广泛,功能也越来越强大,速度也越来越快。对于在计算机中常见到的USB设备来说,在Linux系统中USB驱动开发是非常有必要的,同时Linux内核对USB设备的支持也非常完善。本文从USB驱动开发的实例出发,介绍了USB设备驱动的基本架构,以及驱动开发过程中的关键技术。     

基于ARM-Linux的网络驱动程序设计

对基于ARM的网络设备驱动程序的开发进行了研究,对嵌入式Linux网络设备驱动程序的运行机制进行了分析,介绍了一般网络设备的体系结构,对网络驱动的主要功能进行讲述。在嵌入式Linux中实现CS8900A网卡驱动,并结合实现CS8900A网卡驱动的实例讲解了基于Linux操作系统的一般网络驱动程序的开发流程。并具体分析了网络设备的初始化、设备的打开与关闭、数据的发送与接收以及中断处理等相关问题。最后在Linux平台编译运行且通过测试。     

基于Hisi3531平台的I2C总线驱动的研究与应用

通过学习嵌入式liunx设备驱动程序,对I2C总线体系结构做了进一步的深入研究,在基于Hisi3531平台上,以其内置的I2C模块为主控制器,gpio寄存器为从设备,实现I2C总线驱动程序的应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.