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报道了多晶硅栅 6 H- Si C MOS场效应器件的制造工艺和器件性能。 6 H- Si C氧化层的SIMS分析说明在氧化过程中 ,多余的 C以 CO的形式释放 ,铝元素逸出极少 ,氧化层中因有较多的铝而正电荷密度较大 ,Si C的氧化速率和掺杂类型关系不大。器件漏电流都有很好的饱和特性 ,最大跨导为 0 .36 m S/ mm ,沟道电子迁移率约为 14cm2 / V.s,但串联电阻效应明显。 相似文献
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The first high voltage npn bipolar junction transistors (BJTs) in 4H-SiC have been demonstrated. The BJTs were able to block 1800 V in common emitter mode and showed a peak current gain of 20 and an on-resistance of 10.8 mΩ·cm2 at room temperature (IC=2.7 A @ VCE=2 V for a 1 mm×1.4 mm active area), which outperforms all SiC power switching devices reported to date. Temperature-stable current gain was observed for these devices. This is due to the higher percent ionization of the deep level acceptor atoms in the base region at elevated temperatures, which offsets the effects of increased minority carrier lifetime at high temperatures. These transistors show a positive temperature coefficient in the on-resistance characteristics, which will enable easy paralleling of the devices 相似文献
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High-voltage lateral MOSFET's on 6H- and 4H-SiC have been fabricated with 400-475 V breakdown voltage using the RESURF principle. An MOS electron inversion layer mobility of about 50 cm2/V-s is obtained on 6H-SiC wafers. This mobility is high enough such that the specific on-resistance of the 6H-SiC MOSFET's (~0.29-0.77 Ω-cm2) is limited by the resistance of the drift layer, as desired. However, the implanted drift layer resistance is about ten times higher than expected for the implant dose used. Design and process changes are described to decrease the on-resistance and increase the breakdown voltage. For 4H-SiC, extremely low mobility was obtained, which prevents satisfactory device operation 相似文献
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分析了不同晶面上温度对 6H-Si C MOSFET击穿特性的影响。以 Si面为例 ,分析了温度对器件的击穿电压、临界电场、比导通电阻等物理量的影响。根据 6H-Si C各向异性的特性 ,采用张量扩展将其扩展到 C面 ,研究表明虽然在不同的晶面上器件的击穿电压不同 ,但其随温度的变化趋势是相同的 ,都具有正温度系数。 相似文献
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In this letter, we utilize a lower thermal budget with an aluminum doped p-well to minimize the effect of “step bunching” and a new structural design with deep spacer implants to prevent the JFET “pinching” action at small p-well spacings (5 μm) in planar vertical double implanted MOSFET (DIMOS) devices fabricated on 6H-SiC. A specific ON-resistance of 42 mΩ-cm2 (further reducible by 35% through simple design modification), which represents a 100% reduction over devices which did not receive the spacer implants, is observed on the 2-μm channel devices. This novel scheme will allow increased packing densities for high power applications using the DIMOS structure in SiC 相似文献
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Jason A. Gardner Mulpuri V. Rao Y. L. Tian O. W. Holland E. G. Roth P. H. Chi I. Ahmad 《Journal of Electronic Materials》1997,26(3):144-150
Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves
raise the temperature of the sample at a rate of 200°C/min vs 10°C/min for conventional ceramic furnace annealing. Samples
were annealed in the temperature range of 1400-1700°C for 2-10 min. The implanted/annealed samples were characterized using
van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the
characteristics of the microwave-annealed material are similar to those of conventional furnace anneals despite the difference
in cycle time. 相似文献
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利用二维器件仿真软件 MEDICI建立了具有指数分布界面陷阱的 n沟 6H-Si C场效应晶体管的结构模型和物理模型 ,通过模拟研究 ,分析和讨论了界面陷阱对器件阈值电压、跨导及其温度特性的影响。 相似文献
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本文对一种新型增强型4H-SiC埋沟MOSFET结构的工作机理进行了研究.通过对不同偏压下电荷分布和电势分布的分析,分别总结了线性区和饱和区所包含的工作模式. 相似文献
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Planar, high voltage (800 V) P-N junction diodes have been fabricated for the first time on N-type 6H-SiC by room temperature boron implantation through a pad oxide deposited within windows etched in an LPCVD field oxide. All the diodes showed excellent rectification with leakage currents of less than 10 nA (~5×10-5 A/cm2 ) until avalanche breakdown. It was found that the breakdown voltage increases with junction depth. The reverse recovery time (trr) was measured to be 50 ns for the 800 V diode from which an effective minority carrier life time of 12.5 ns was extracted 相似文献
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An ultrathin vertical channel (UTVC) MOSFET with an asymmetric gate-overlapped low-doped drain (LDD) is experimentally demonstrated. In the structure, the UTVC (15 nm) was obtained using the cost-effective solid phase epitaxy, and the boron-doped poly-Si/sub 0.5/Ge/sub 0.5/ gate was adopted to adjust the threshold voltage. The fabricated NMOSFET offers high-current drive due to the lightly doped (<1/spl times/10/sup 15/ cm/sup -3/) channel, which suppresses the electron mobility degradation. Moreover, an asymmetric gate-overlapped LDD was used to suppress the offstate leakage current and reduce the source/drain series resistance significantly as compared to the conventional symmetrical LDD. The on-current drive, offstate leakage current, subthreshold slope, and DIBL for the fabricated 50-nm devices are 325 /spl mu/A//spl mu/m, 8/spl times/10/sup -9/ /spl mu/A//spl mu/m, 87 mV/V, and 95 mV/dec, respectively. 相似文献
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据《世界电子元器件》2009年9月月刊报道,IR推出一系列150 V和200 VHEXFET功率MOSFET,为开关模式电源(SMPS)、不断电系统(UPS)、反相器和DC马达驱动器等工业应用提供极低的闸电荷(Qg)。随着DC/DC功率转换应用技术的日益进步,开关频率也有所提高,输入电 相似文献
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Mikhaylov A. I. Afanasyev A. V. Ilyin V. A. Luchinin V. V. Reshanov S. A. Schöner A. 《Semiconductors》2020,54(1):122-126
Semiconductors - A method for reducing the on-state resistance of a high-power 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) by forming a buried channel via the growth of... 相似文献
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A nondestructive reverse-bias safe operating area (RBSOA) tester using an ultra-fast shunt circuit is constructed and demonstrated up to an 1800 V 300 A level. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. The tester is an upgraded version of the old tester (rated at 1000 V 120 A) reported by the authors in 1985. The basic operation of the tester is reviewed, the design and the fabrication of the new tester are described, and test results are provided 相似文献