面向对注氢硅片中微结构的影响

把不同面向的注氢硅片制成横截面样品,在高分辨率透射电子显微镜下进行观察,发现衬底面向对其中的微结构有明显的影响.首先表现为衬底中主要出现平行于正表面的氢致片状缺陷,即(10 0 )衬底中,主要出现平行于正表面的{ 10 0 }片状缺陷,而(111)衬底中出现的主要是平行于正表面的{ 111}片状缺陷.其原因是注入引起垂直正表面的张应变.另外,面向的影响还表现为,(10 0 )衬底中出现的{ 113}缺陷在(111)衬底中不出现.在(111)衬底中出现的晶格紊乱团和空洞在(10 0 )衬底中不出现.从而推测,{ 111}片状缺陷的形成不发射自间隙原子,而(10 0 )片状缺陷的形成将发射自     

Spatially resolved Raman investigation of Si-doped GaAs layers on patterned GaAs(100) substrates grown by molecular beam epitaxy

Local carrier transport properties of Si-doped GaAs layers on ridge structures exhibiting (111)A and (111)B sidewalls are investigated. The layers were grown by molecular beam epitaxy at different substrate temperatures and As/Ga flux ratios. Using spatially resolved Raman spectroscopy we determine the type and density of free charge carriers (≥ 5 × 10¹⁷ cm⁻³) in the grown layers on the different index facets from an analysis of the coupled plasmon-longitudinal optical-phonon mode which was calibrated against Hall standards. We demonstrate that on the (100) and (111)B facets the regrown layers are n-type and on the (111)A facets p- or n-type depending on the growth conditions. Line scans of the carrier density show that the (100)/(111)A/(100) facet transition forms a graded lateral n-p-n junction. Spatially resolved photoluminescence measurements confirm our findings.     

低温MOCVD法沉积的GaN/GaAs(001)薄膜中的孪晶现象

采用同步辐射XRD极图法对低温MOCVD生长的GaN缓冲层薄膜进行了研究.极图研究表明,低温GaN薄膜中除有正常结晶外还存在一次孪晶和二次孪晶.在χ固定为55°时的{111}ψ扫描中发现了异常的Bragg衍射峰,表明GaN/GaAs(001)低温生长中孪晶现象非常明显.GaAs(001)表面上出现的{111}小面极性会在生长初期影响孪晶成核,实验结果表明孪晶更易在{111}B面即N面上成核.     

Crystal growth and equilibrium crystal shapes of silicon in the melt

The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three‐dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface. Copyright © 2012 John Wiley & Sons, Ltd.     

Spatially resolved optical spectroscopy of GaAs islands on InAs (111)

Three-dimensional micrometer-sized GaAs islands, with pyramidal shapes, have been grown by metal organic vapour phase epitaxy on (111)B InAs. The local strain profile in a single isolated pyramid is deduced from spatially resolved Raman and photoluminescence measurements. High residual tensile strains are found in the GaAs layer surrounding the pyramid. The strain in the pyramid is progressively relaxed from the bottom to the top (nearly strain-free). Furthermore, the Raman selection rules are correlated to the [111] substrate orientation and the high index pyramid facets.     

MOCVD growth of AlGaAs/GaAs structures on nonplanar {111} substrates: Evidence for lateral gas phase diffusion

We investigate the MOCVD growth characteristics of AlGaAs on nonplanar {111}A and {111}B substrates. Growth over features etched into the {111} substrates is found to be highly anisotropic and asymmetric. The ratio of growth rates on adjacent facets is strongly dependent on the depth of the etched feature during growth, and is strikingly different between AlGaAs and GaAs layers. These observations suggest a large difference in the surface chemistry of Al and Ga species under these growth conditions and indicate that the column III element determines the relative growth rates of different facets during nonplanar growth. The results also provide strong evidence that lateral gas phase diffusion of reactants can be perhaps more significant than surface migration as a mechanism determining the incorporation sites of column III elements. Growth characteristics on nonplanar {111} substrates are markedly different than those observed for nonplanar growth on {100} substrates, creating a new set of design tools for the single step growth of guided wave devices such as lasers, modulators and waveguides.     

InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics

Zero-net strained multilayers alternating GalnP and InAsP with lattice mismatches with InP of −1% and 1% respectively have been grown by Metallo-Organic Vapour Phase Epitaxy and examined by Transmission Electron Microscopy. Different substrate orientations were used, inducing different growth morphologies. On (001) and (113)B substrates, the GalnP and InAsP layers were laterally modulated, forming vertical stripes parallel to the [1 0] and [3 ] directions respectively. This could be related to the surface reconstruction (group V element dimerisation), which favours islands built with facets of A type (gallium steps) rather than with facets of B type (arsenic steps). On a (110) vicinal substrate (misorientation of 3° towards (111)B), a step bunching phenomenon was observed.     

CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxy

The surface growth kinetics of CdTe and HgTe have been investigated during molecular and metalorganic molecular beam epitaxy. The surface growth kinetics was studied through in-situ measurements of the growth rate as a function of flux ratio and substrate temperature on the (001), (111)B, and (211)B CdTe surface orientations. For the (001) and (111)B CdTe growth kinetics, the existence of low binding energy surface precursor sites was proposed for both molecular and atomic growth species before lattice incorporation. Intensity oscillations were observed during HgTe growth on misoriented (111)B surfaces and during CdTe growth on the (211)B orientation. The (211)B surface reconstructions displayed both vicinal and singular surface characteristics, depending on the growth flux ratio.     

Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition

A thorough study of direct InSb nanocrystal formations on patterned InAs (111)B substrates is provided. These nanostructures are created without the use of Au catalysts or initial InAs segments. Under the growth conditions generally used for selective‐area, catalyst‐free epitaxy, a wide range of InSb nanocrystal morphologies are observed. This is because the low‐energy InSb surfaces, studied by first‐principles calculations, are the {111} facets as opposed to the {110} facets. By controlling the V/III ratio during growth, different InSb nanostructures can be achieved. Using low V/III growth conditions, In droplets start to form and InSb nucleation takes place at the droplet–semiconductor interface only, resulting in vertical, self‐catalyzed InSb nanopillars.     

Effect of Temperature on the Morphology of Planar GaAs Nanowires (Simulation)

Semiconductors - The self-catalyzed growth of planar GaAs nanowires is analyzed using the lattice kinetic Monte Carlo model. Vapor–liquid–solid nanowire growth on (111)A and (111)B...     

Facet Control for Trap‐State Suppression in Colloidal Quantum Dot Solids

Trap states in colloidal quantum dot (QD) solids significantly affect the performance of QD solar cells, because they limit the open‐circuit voltage and short circuit current. The {100} facets of PbS QDs are important origins of trap states due to their weak or missing passivation. However, previous investigations focused on synthesis, ligand exchange, or passivation approaches and ignored the control of {100} facets for a given dot size. Herein, trap states are suppressed from the source via facet control of PbS QDs. The {100} facets of ≈3 nm PbS QDs are minimized by tuning the balance between the growth kinetics and thermodynamics in the synthesis. The PbS QDs synthesized at a relatively low temperature with a high oversaturation follow a kinetics‐dominated growth, producing nearly octahedral nanoparticles terminated mostly by {111} facets. In contrast, the PbS QDs synthesized at a relatively high temperature follow a thermodynamics‐dominated growth. Thus, a spherical shape is preferred, producing truncated octahedral nanoparticles with more {100} facets. Compared to PbS QDs from thermodynamics‐dominated growth, the PbS QDs with less {100} facets show fewer trap states in the QD solids, leading to a better photovoltaic device performance with a power conversion efficiency of 11.5%.     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.     

Te-rich liquid phase epitaxial growth of HgCdTe on Si-based substrates

The growth of high quality (111)B oriented HgCdTe layers on CdZnTe/GaAs/Si and CdTe/Si substrates by Te-rich slider liquid phase epitaxy (LPE) is reported. Although the (111) orientation is susceptible to twinning, a reproducible process yielding twin-free layers with excellent surface morphology has been developed. The electrical properties and dislocation density in films grown on these substrates are comparable to those measured in HgCdTe layers grown on bulk CdTe substrates using the same LPE process. This is surprising in view of the large lattice mismatch that exists in these systems. We will report details of both the substrate and HgCdTe growth processes that are important to obtaining these results.     

Liquid phase epitaxial growth of InAs1-xSbx on GaSb

Reported here, for the first time, is the lattice matched growth of InAs_1-xSb_x on GaSb. The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique. Liquid compositions for lattice matching conditions have been determined in the 400-600°C range. Epitaxial growth has been examined for (100), (111)B and (111)A orientations. Dislocation etch pit densities for lattice matched, and near lattice matched conditions are shown to be less than 10⁴-cm⁻² and 10⁵-cm⁻⁴, respectively. The composition of the epitaxial layers are determined by the Gandolfi X-ray diffraction technique and compositional homogeneity has been confirmed by SEM X-ray analysis. Some material related device properties which demonstrate the reproducibility of the growth technique are presented.     

时域物理光学法分析均匀介质目标的瞬态散射

提出将时域物理光学法（TDPO）应用于计算电大均匀介质目标的时域散射场。将菲涅尔反射系数应用到频域物理光学近似中,由逆傅里叶变换推导出介质TDPO的表达式,从而使TDPO能够分析电大均匀介质目标的瞬态响应。同时给出了三角面片建模下入射波的遮挡消隐方法。计算了典型目标的瞬态散射响应和宽带雷达散射截面（RCS）,与其他方法求得的结果吻合良好,验证了介质TDPO的正确性。     

Cathodoluminescence study of AlGaAs/GaAs multilayers grown on ridge-type triangles on GaAs (111)A substrates

We have studied the cathodoluminescence of AlxGa1-xAs/GaAs multilayers grown on ridge-type triangles by molecular beam epitaxy. The compositional variation of Al, as well as the distribution of impurity and/or defect, was revealed by variations in the cathodoluminescence spectra and images. The Al composition in an AlxGa1-xAs layer was highest in the (111)A facet and decreased in the order (100), (411)A, (111)-delta and (110) facets. On the other hand, the carbon concentration was highest in the (411)A facet and decreased in the order (111)A, (111)-delta, (100) and (110) facets. It should be noted that the (111)-delta facet has a significant effect on the redistribution of Al. Although our ridge-type triangles are rather large for the quantum structures, these data have elucidated the self-organization mechanism of the AlxGa1-xAs/GaAs system and have yielded information on the design of quantum structures. We conclude that cathodoluminescence observation is a powerful tool for studying the compositional variation or band structure of three-dimensional microscale or nanoscale construction.     

在蓝宝石图形衬底上生长低穿透性位错的GaN薄膜

使用MOCVD外延系统,采用3D-2D生长模式在圆锥图形蓝宝石衬底上生长GaN薄膜。研究发现3D-2D生长模式能够有效的减少GaN薄膜的穿透性位错,其中3D GaN层的生长条件是关键：低V/III比,低温和高生长压力。为了进一步减少TD,3D GaN层的厚度应该与图形衬底上的图形高度接近。当3D GaN层生长结束时,3D GaN层把图形衬底的图形围在其中,具有倾斜的侧壁和（0001）向的上表面,而图形上基本没有沉积物。在接下来的2D生长过程里,GaN沿倾斜侧面快速生长,使得侧面上的穿透性位错产生弯曲,从而减少GaN薄膜的穿透性位错。经过对3D条件的优化,GaN薄膜的穿透性位错降低到1×108cm-2,XRD测试得到的（002）,（102）半宽分别达到211弧秒和219弧秒。     

THE STUDY OF Si(100)AND(111)SURFACES AND Ni MOLECULAR BEAM EPITAXY ON THEM BY RHEED

Clean Si(100)and(111)surfaces produced by the Ar~+ ion bombardment and high temperatureanealing techniques,and the epitaxial growth of Ni on them at room temperatue using molecular beammethod are studied by reflection high energy electron diffraction(RHEED).On the basis of experimentresults,Si(111)7×7 and its negative zone RHEED pattern,Si(100)2×1,Si(111)19~(1/2)×19~(1/2)Ni and Si(100)4×2Ni structures have been obtained,and the lattice structure of nickel silicides produced by epitaxy withlow growth rate(0.15-0.5per min)is the same as that of silicon substrate.     

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

The results of experimental studies on the growth and the morphological and structural properties of GaAs nanowire crystals on different silicon surfaces are reported. It is shown that the nonplanar geometrical layout of growth allows the production of epitaxial nanowire crystals in a system with a large lattice mismatch. The growth on porous substrates, the role of the surface orientation, high-temperature annealing, and presence of an oxide layer at the surface, and some other effects typical of growth of III–V nanowire crystals on the Si surface are studied and analyzed. Intense emission from the array of GaAs nanowire crystals grown on the Si (111) surface is observed.     

Specific features of epitaxial-film formation on porous III–V substrates

Porous GaAs (100) and (111) substrates with nanostructured (～10 nm) surface profiles are obtained in which pores branching in the 〈111〉 direction form a dense network with a volume density of ～60% under the surface at a depth of ～(50–100) nm. The surface of the substrates and the structure of GaSb layers grown on these substrates are studied. A decrease of 22% in the lattice-parameter mismatch at the GaSb/GaAs(porous) interface compared with that at the GaSb/GaAs(monolithic) interface is observed. Ideas about the chemical mechanisms of pore formation in III–V crystals are developed, and relations connecting the structure of porous layers to the composition of electrolytes and anodization conditions are established. It is shown that the dependence of the layers’ growth rate on lattice elastic strain can be conducive to an enhanced overgrowth of pores and to a transition to planar growth.