Numerical simulation of point-to-plane corona discharge using a Monte Carlo method

Monte Carlo simulation techniques are used to study the dynamical properties of charged particles in point-to-plane corona discharge. The numerical model includes the release of electron-ion pairs by photoionization and secondary electron emission from cathode as well as the first Townsend ionization. The simulation results of negative corona discharge in nitrogen show that electron avalanche takes place in the region of high electric field near pin electrode and the photoionization is the essential mechanism to sustain the discharge as well as electron impact ionization.     

磁控过程的计算机模拟

本文基于蒙特卡罗方法,并结合SRIM软件,编制程序跟踪模拟了磁控溅射各物理过程的粒子状态.以铝靶材为例,得到了粒子在磁控溅射各物理过程的状态分布,讨论了工作参数对薄膜沉积过程的影响.模拟结果表明:溅射原子的能量主要分布在20 eV以下,当原子沉积到基片表面时,其能量主要分布在15 eV以下,但有两个分布峰值,两个分布峰值对应着快慢两种不同形式的沉积过程.原子沉积到基片 表面的位置大致服从正态分布,气压p和靶基距离d影响正态分布的方差,也即影响沉积原子在基片表 面分布的均匀性.功率与沉积速度呈良好的线性关系,在工作气压为1 Pa,靶基距离为60mm的条件下,当入射粒子的能量为250 eV时,模拟得到的功率效率最大.     

Manufacturing process problem analysis using monte carlo simulation

The Monte Carlo simulation technique is already well known and used to analyse complex problems. In this paper we present its use to determine the impact of a manufacturing process problem on output quality. During production start-up on an automated manufacturing line a process problem escaped detection for a short period. There was the need to know its impact on output quality in order to provide an appropriate corrective action strategy for the products already in the warehouse and ready for shipment to selected users.     

Prediction of micro-channel flows using direct simulation Monte Carlo

The direct simulation Monte Carlo (DSMC) method is a particle-based numerical modeling technique. It is recently used for simulating gaseous flow in micro-electro-mechanical-systems (MEMS) where micron-scale features become important. In this paper, numerical simulations of fluid flow in micro-channels are carried out using the DSMC method. The details in determining the parameters critical for DSMC applications in micro-channels are provided. Streamwise velocity distributions in the slip-flow regime are compared with the analytical solution based on the Navier–Stokes equations with slip velocity boundary condition. Satisfactory agreements have been achieved. Effects of the entrance and exit regions on simulation results are discussed. Simulations are then extended to transition flow regime (Kn>0.1) and compared with the analytical solution. It is shown that the results are distinguished with the analytical solutions, which fail to predict the flow due to the break down of continuum assumption. It is indicated that the gradient of the pressure along the channel direction dominates the motion of the fluid flow.     

Numerical simulation of local ice loads in uniform and randomly varying ice conditions

The ice loading process has a clear stochastic nature due to variations in the ice conditions and in the icebreaking processes of ships. The statistical characteristics of local ice loads are typically studied on the basis of field measurements. In this paper, a numerical method was applied to simulate a ship moving forward in either uniform or randomly varying ice conditions, where the thickness and strength properties of the ice encountered by the ship were assumed to be constant or randomly generated using the Monte Carlo method. The purpose of this simulation is to show the origin of the statistical variation in ice loading, which is difficult to identify in field measurements. To validate the numerical results, an icebreaking tanker, MT Uikku, was then modeled in a simulation program, the ice loading process was stochastically reproduced and the calculated amplitude values of the ice-induced frame loads were compared with the field measurements.     

Direct simulation Monte Carlo modeling of metal vapor flows in application to thin film deposition

Thin films of metal for electronics, nano/microelectromechanical systems and optical coatings are often prepared by various vacuum deposition techniques. Modeling such metal vapor flows using methods such as the direct simulation Monte Carlo (DSMC) can aid in the design and analysis of deposition systems and accelerate development of films with desired properties. The determination of suitable variable hard sphere (VHS) molecular model parameters for DSMC simulations using measured growth rate distribution is demonstrated with aluminum vapor as an example. Axisymmetric DSMC simulations using a VHS model corresponding to a reference diameter of 0.8 nm and a viscosity-temperature exponent of 1 are shown to agree well with available experimental data. The model is then used in two-dimensional DSMC simulations to study the interaction of plumes from multiple sources. An expression for substrate mass flux assuming no interaction between sources agrees well with DSMC simulations for a mass flow rate of 0.1 g/min corresponding to a Knudsen number (Kn) of about 0.1. The non-additive interaction of plumes at a higher flow rate of 1 g/min corresponding to a Kn of about 0.01 results in a higher mass flux non-uniformity in the DSMC simulations which is not captured by the simplified analytical expression.     

柱-锥结合线型药型罩射流特性的数值模拟

为了提升线型聚能装药的切割能力,在锥形线型药型罩的基础上设计了一种新型柱-锥结合线型药型罩,并采用数值模拟软件ANSYS/ls-dyna对柱-锥结合线型药型罩、圆弧顶线型药型罩、锥形线型药型罩射流的形成及切割45号钢板的过程进行了数值模拟,通过对比3种结构药型罩形成射流的头尾部速度、拉伸断裂时间、对45号钢板的切割能力来确定设计方案的可行性。研究表明:柱-锥结合线型药型罩形成射流的头部速度最高,相对锥形线型药型罩提高了约12.6%,相对圆弧顶线型药型罩提高了约5.4%;而且柱-锥结合线型药型罩形成的射流拉伸性能较好,能量更高,对45号钢板的切割能力最强,相对圆弧顶线型药型罩提升了约26.7%,相对锥形线型药型罩提升了约58.8%。     

Production rate of synchronous transfer lines using Monte Carlo simulation

In this paper, we consider unpaced synchronous transfer lines producing a single product. The transfer line stations are arranged in a series con?guration, have no buffers, and are subject to operation-dependent failures. Throughput is an important performance measure for transfer lines, and we have adopted that measure. Analytical methods for determining capacity of such transfer lines are available only for the simplest systems, but we show Monte Carlo simulation to be a fast, flexible, easy, and accurate method of estimating throughput in lines of any length and having a wide range of operating characteristics.     

Monte Carlo simulation of nucleation and growth of thin films

We study thin film growth using a lattice-gas, solid-on-solid model employing the Monte Carlo technique. The model is applied to chemical vapour deposition (CVD) by including the rate of arrival of the precursor molecules and their dissociation. We include several types of migration energies including the edge migration energy which allows the diffusive movement of the monomer along the interface of the growing film, as well as a migration energy which allows for motion transverse to the interface. Several well-known features of thin film growth are mimicked by this model, including some features of thin copper films growth by CVD. Other features reproduced are—compact clusters, fractal-like clusters, Frank-van der Merwe layer-by-layer growth and Volmer-Weber island growth. This method is applicable to film growth both by CVD and by physical vapour deposition (PVD).     

导弹折叠展开机构工作可靠性的Monte Carlo模拟计算方法研究

针对导弹折叠展开机构工作可靠性计算精度较差的问题,应用力矩状态函数和功状态函数相结合的可靠性分析方法,以导弹翼面上的力矩和功作为可靠性特征变量,建立导弹折叠展开机构工作可靠性计算模型,提出了机构可靠性的Monte Carlo模拟计算方法,并对某型导弹的翼面折叠展开机构工作可靠性进行了分析计算,所得可靠度比仅仅基于力矩的计算结果提高24.34%,比仅仅基于功的计算结果提高11.74%．计算结果表明,采用所提出的方法计算得到的机构可靠度,与仅仅基于力矩或功的计算结果相比较,更接近于工程实际．     

Monte Carlo simulation of polycrystalline microstructures and finite element stress analysis

A two-dimensional numerical model of microstructural effects is presented, with an aim to understand the mechanical performance in polycrystalline materials. The microstructural calculations are firstly carried out on a square lattice by means of a 2-D Monte Carlo (MC) simulation for grain growth, then the conventional finite element method is applied to perform stress analysis of a plane strain problem. The mean grain size and the average stress are calculated during the MC evolution. The simulation result shows that the mean grain size increases with the simulation time, which is about 3.2 at 100 Monte Carlo step (MCS), and about 13.5 at 5000 MCS. The stress distributions are heterogeneous in materials because of the existence of grains. The mechanical property of grain boundary significantly affects the average stress. As the grains grow, the average stress without grain boundary effect slightly decreases as the simulation time, while the one with strengthening effect significantly decreases, and the one with weakening effect increases. The average stress and the grain size agree well with the Hall–Petch relationship.     

磁性多层膜系统自旋重取向行为的Monte Carlo模拟

依据Heisenberg模型,利用Monte　Carlo方法模拟了磁性多层膜系统的自旋重取向行为,研究了各向异性、偶极相互作用以及外磁场对系统自旋取向的影响。通过模拟计算,获得了系统组态、磁分量等随偶极相互作用、外加磁场和温度的变化规律,重点研究了磁性多层膜系统在外磁场作用下的磁滞现象。     

离子注入射程分布的计算机模拟系统

介绍了自主开发的基于输运理论和蒙特卡罗方法的计算离子注入射程分布的软件集成系统JTU -PRII(JiaotongUniversity -ProjectRangeIonImplantation) ,该系统整体上具有通用性、高效性和实用性 .通用性即 :该系统具有注入离子参数库和注入零件材料库的生成和调用功能 ,能计算各种注入条件下 ,包括各种注入离子 ,各种成分和形状的靶材 ,不同注入能量、注入剂量和注入角度时注入离子在靶材中的分布 ;高效性即 :由于在关键步骤中用数值拟合公式代替了数值迭代求解 ,用固定飞行路程代替随机路程 ,使计算效率大大提高 ,计算速度大大加快 ;实用性即 :由于考虑了溅射效应和靶材成分在注入过程中的动态变化 ,加之蒙特卡罗方法的固有特性 ,使计算的前提假设更接近实际 ,计算结果更加准确 .与其它著名的同类软件 ,如TRIM和SASAMAL相比 ,该软件系统界面美观 ,操作便捷 ,能动态显示中间计算结果和注入过程曲线的变化 ,可调用、计算、比较、注释、拷贝和打印各条成分分布曲线 ,计算结果与实验结果吻合得也很好 .     

Experimental validation of Direct Simulation Monte Carlo (DSMC) model of vapour jets from high temperature sources

A 3-D Direct Simulation Monte Carlo (DSMC) code has been developed to study the vapour characteristics of atomic species. This model needs to be verified with experimental results. Experiments have been conducted with free jet of copper using electron beam source and the flux distribution data have been obtained under different experimental conditions. For better statistics, the Direct Simulation Monte Carlo (DSMC) code was parallelised to run on parallel system. The experimental results from circular and a slit source (Kn varies from 0.47 to 0.083) have been compared with Direct Simulation Monte Carlo (DSMC) results. The results have shown excellent agreement. From the trend of the flux distribution curves, it is clear that with lower Kn, more uniform coating can be expected.     

Non-Gaussian simulation using Hermite polynomial expansion: convergences and algorithms

Mathematical justifications are given for a Monte Carlo simulation technique based on memoryless transformations of Gaussian processes. Different types of convergences are given for the approaching sequence. Moreover an original numerical method is proposed in order to solve the functional equation yielding the underlying Gaussian process autocorrelation function.     

SiC电子输运的蒙特卡罗模拟

采用了Monte Carlo方法研究了2H-、4H-和6H-SiC的电子输运特性.在模拟中,采用动量弛豫率近似的方法确定散射角,显著压缩散射次数,并用高效的新查表法确定自由飞行时间,相对于阶梯值的自散射方法,完全消除了自散射,大量节省cpu时间.     

Node placement for triangular mesh generation by Monte Carlo simulation

A new approach of node placement for unstructured mesh generation is proposed. It is based on the Monte Carlo method to position nodes for triangular or tetrahedral meshes. Surface or volume geometries to be meshed are treated as atomic systems, and mesh nodes are considered as interacting particles. By minimizing system potential energy with Monte Carlo simulation, particles are placed into a near‐optimal configuration. Well‐shaped triangles or tetrahedra can then be created after connecting the nodes by constrained Delaunay triangulation or tetrahedrization. The algorithm is simple, easy to implement, and works in an almost identical way for 2D and 3D meshing. Copyright © 2005 John Wiley & Sons, Ltd.     

二维晶粒演变过程的模拟及分形研究

以蒙特卡罗随机模拟方法为基础,通过对原有算法进行改进,对二维晶粒的演变过程进行了计算机模拟和分形研究,获得了统计等效组织模型．分析表明,模拟的晶粒在演变过程中具有分形特性,即晶粒形态具有与时间无关的相似性,与晶粒形核和生长的物理机制相一致,证明了模拟过程的合理性．从而为后续热变形显微组织演变的模拟中晶核的空间分布和生长提供较为精确的显微组织基础．     

A semi-analytical simulation method for reliability assessments of structural systems

A semi-analytical simulation method is proposed in this paper to assess system reliability of structures. Monte Carlo simulation with variance-reduction techniques, systematic and antithetic sampling, is employed to obtain the samples of the structural resistance in this method. Variance-reduction techniques make it possible to sufficiently simulate the structural resistance with less runs of structural analysis. When resistance samples and its moments determined, exponential polynomial method (EPM) is used to fit the probability density function of the structural resistance. EPM can provide the approximate distribution and statistical characteristic of the structural resistance and then the first-order second-moment method can be carried out to calculate the structural failure probability. Numerical examples are provided for a structural component and two ductile frames, which illustrate the method proposed facilitates the evaluation of system reliability in assessments of structural safety.