混合光栅型的三段式自脉动DFB激光器

制作了1.55μm InGaAsP-InP三段式混合光栅型DFB激光器.观察到了20GHz左右的自脉动信号.讨论了自脉动的产生机制,并且对调相区所起的作用进行了研究.     

半导体条形DH激光器中本征自脉动的精确理论

本文采用从实际电极等位体出发而不人为假设任何回定形式的注人电流分布的精确理论描述,进一步探讨了具有非自经波导的半导体条形D8激光瞩产生本征国脉动的物理机制及其内外因素的影响.指出偏置和外加电极电压上升时间对自脉动过程有巨大作用,并得出更愉确的自脉动区(出现自脉动的电压电流范回入     

三区DFB激光器高速自脉动的研究

全光信号再生技术是超高速大容量全光网络中的核心技术,其中全光时钟提取是全光再生技术的关键,基于多区DFB激光器件自脉动进行时钟提取是最佳选择方案。基于双区DFB激光器件自脉动研究的基础上,对三区DFB激光器件的自脉动特性进行了讨论和数值模拟分析,并对提高自脉动频率的方案进行了研究。     

光泵亚毫米波激光器双稳自脉冲运转特性

研究了光泵亚毫米波激光器的双稳和自脉动等动力学行为.结果表明泵浦光能产生双稳效应,导致输出光的一部分定态不存在,脉动输出较易产生,脉动频率随着泵浦光强的增大而增大.     

窄条AlGaAs激光器的自脉动研究

分析了利用窄条AlGaAs激光器的自脉动来进行3R时钟提取的基本原理,阐述了F-P腔半导体激光器自脉动产生的机理和条件,同时研究了窄条AlGaAs激光器的结构参数对自脉动的影响,提出了一种在不规则窄条AlGaAs激光器中加入量子阱结构以提高输出光脉冲频率和功率的方法.并使用仿真程序对该方法进行了仿真实验.     

GaAs/AlGaAs量子级联激光器自脉动动力学

利用步进扫描时间分辨傅里叶变换红外光谱,研究了波长9.76μm GaAs/AlGaAs量子级联激光器的准连续波激射谱.在驱动电流周期内,时间上堆叠的发射谱能够观察到明显的光强自脉动现象.有源区中的自加热积累大大影响了电子的驰豫和输运性质.热引起的在注入区较高子能级中占据的载流子由于这些子能级与下一注入区的连续态形成共振条件而泄露,而耦合阱有源区中第四子能级的存在加快了这个过程.周期性破坏和恢复的共振条件所引起的载流子泄露在很大程度上导致了时域堆叠光谱的自脉动.     

GaAs/AlGaAs量子级联激光器自脉动动力学

利用步进扫描时间分辨傅里叶变换红外光谱,研究了波长9.76μm GaAs/AlGaAs量子级联激光器的准连续波激射谱.在驱动电流周期内,时间上堆叠的发射谱能够观察到明显的光强自脉动现象.有源区中的自加热积累大大影响了电子的驰豫和输运性质.热引起的在注入区较高子能级中占据的载流子由于这些子能级与下一注入区的连续态形成共振条件而泄露,而耦合阱有源区中第四子能级的存在加快了这个过程.周期性破坏和恢复的共振条件所引起的载流子泄露在很大程度上导致了时域堆叠光谱的自脉动.     

窄条AlGaAs激光器自脉动的研究及结构设计

阐述了窄条A1GaAs激光器自脉动现象产生的机理和条件,利用激光器的自脉动可以进行全光3R时钟提取,并研究改变激光器的结构参数对自脉动现象的影响规律。重点提出了一种在窄条AlGaAs激光器中加入量子阱结构的方法,通过仿真实验表明,该种含量子阱结构的窄条AlGaAs激光器能够提高输出光脉冲的频率和功率,减少输出光脉冲散光特性。     

窄条AlGaAs激光器自脉动现象研究

阐述了窄条AlGaAs激光器自脉动现象的产生机理和条件,分析了改变激光器的结构参数对自脉动现象的影响规律。提出了一种在窄条AlGaAs激光器中加入量子阱结构来提高窄条AlGaAs激光器的输出光脉冲频率和功率,减少输出光脉冲散光特性的方法。     

半导体激光器的自脉动与被动锁模

利用普适GaAlA3双异质结半导体激光器，观察到被动锁模现象。讨论了半导体激光二极管的自脉动、外腔中的诱导自脉动以及被动锁模间的区别与联系。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first