Reflection properties of oriented thin CdS films formed by laser ablation

Oriented thin (≈2 μm) films, CdS, prepared by laser ablation were characterized by the dependence of external and internal reflection on both the angle of incidence and the polarization of laser light. The samples exhibit perpendicular and parallel orientation of the crystallographic axis with respect to the surface of the glass substrate. The experiments were performed at 300 K using low intensity (<1 W/cm²) cw emissions at 476.5, 514.5 and 632.8 nm of argon and He–Ne lasers respectively. For blue and green light, the results are very well described by the theoretical models based on Fresnel reflection. In contrast to the external features, the internal reflectance exhibits dichroism and birefringence of the samples at 514.5 nm, revealing the sensitivity of the internal reflection technique to the optical anisotropy of the films. Considering multiple-beam interference, the model of Fresnel also describes satisfactorily the results for red light. However, a rather sensitive dependence on the incoming He–Ne laser intensity was observed. In fact, by increasing the intensity of 64 mW/cm² by about one order of magnitude, only the external reflectance shows good agreement with the theory, whereas the internal reflection properties are obviously influenced by additional effects, such as non-linear change of the optical constants, which are not included in Fresnel reflection considerations.     

Effect of oxygen pressure on the structural and optical properties of ZnO thin films on Si (111) by PLD

ZnO thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at various oxygen pressures in order to investigate the structural and optical properties of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The structural and morphological properties of the films were investigated by XRD and AFM measurements, respectively. The results suggest that films grown at 20 Pa and 50 Pa have excellent UV emission and high-quality crystallinity. The research of PL spectra indicates that UV emission is due to excitonic combination, the green band is due to the replacing of Zn in the crystal lattice for O and the blue band is due to the O vacancies.     

Optical constants of CdS thin films prepared by spray pyrolysis

CdS thin films were prepared by spray pyrolysis techniques. Variable angle spectroscopic ellipsometry was used for optical constant calculations. Multiple angle measurements were taken in the most sensitive angle of incidence region. The sensitive regions of angle of incidence were obtained theoretically using 3-dimensional graph ofδψ andδΔ. Real partn and imaginary partk of the complex refractive index of the samples were calculated in the wavelength range 470–650 nm, taking into account surface roughness. Bruggeman’s effective medium approximation is used for analysis of the surface rough layer of the thin films.     

Ellipsometric studies of microscopic surface roughness of CdS thin films

Analysis of changes in surface roughness of CdS thin films with preparation temperature was carried out using variable angle spectroscopic ellipsometry (VASE). The films studied were prepared by spray pyrolysis technique, in the substrate temperature range 200–360°C. The VASE measurements were carried out in the visible region below the band gap (E _g=2·4eV) of CdS so as to reduce absorption by the film. The thickness of the films was in the range 500–600 nm. Bruggeman’s effective medium theory was used for analysis of the surface roughness of the film. The roughness of the film had a high value (∼ 65 nm) for films prepared at low temperature (200°C) and decreased with increase in substrate temperature. This reached minimum value (∼ 27 nm) in the temperature range 280–300°C. Thereafter roughness increased slowly with temperature. The growth rate of the films was calculated for different temperature ranges. It was found that the deposition rate decreases with the increase in substrate temperature and have an optimum value at 300°C. Above this temperature deposition rate decreased sharply. The scanning electron micrograph (SEM) of the film also showed that the film prepared at 280–300°C had very smooth surface texture.     

Process parameters optimization for laser deposition of highT c superconducting thin films on Si and other substrate materials

Thin films of Y-Ba-Cu-O superconductor have been deposited on different substrates by pulsed excimer laser ablation from a superconducting pellet. The dependence of various process parameters such as substrate temperature, laser energy density, oxygen partial pressure, applied bias field and cooling rates on the quality of the films has been studied.     

CdS多晶薄膜的制备及性质研究

分别采用近空间升华法和电子束蒸发法在透明导电玻璃和普通载玻片上制备了硫化镉(CdS)多晶薄膜.对制备样品的表征结果表明:(1)两种方法制备样品都沿(002)晶向择优生长,属于六方相多晶结构,但择优取向度不同;(2)CdS薄膜表面连续而致密,粒径均匀,但两种工艺制备样品的S:Cd原子比有较大差异;(3)CdS薄膜的光能隙在2.39～2.44eV之间,电子束蒸发制备样品光能隙稍小.分析认为,两种方法制备样品的上述差异可能与衬底温度、沉积时间及成膜机制的不同相关.     

Structure and microstructure of EB-PVD yttria thin films grown on Si (111) substrate

Structure and microstructure of yttria thin films grown by electron beam physical vapour deposition on a stationary Si (111) substrate at room temperature (RT), 500° and 700 °C, were investigated by the grazing-incidence X-ray diffraction and scanning electron microscopy, respectively. X-ray photoelectron spectroscopy provided information on the surface contamination from the atmosphere and the Y oxidation state. A strong effect of the deposition temperature and the vapour flux incidence angle was found. The film deposited at RT is polycrystalline with very fine grains of the body-centered cubic (bcc) crystallographic symmetry. An increase of deposition temperature results in a rapid growth of bcc grains with an improved crystalline structure. Moreover, the based-centered monoclinic phase appears for the deposition temperature of 700 °C. Preferred grain orientation (texture) with two main components, (400) and (622), was observed in the films deposited at 500 °C whereas no texture was found for 700 °C. The microstructure exhibits the columnar feather-like structure of different degrees of perfection which can be explained by the shadowing effects caused by an oblique vapour flux incidence angle. Surface morphology of the films is governed by a combination of the triangular and four-sided (square) columns. All films were found to be dense with a little porosity between the columns.     

Electrochemical processing of high-T c Bi(Pb)-Sr-Ca-CuO thin films

Superconducting thin films of Bi(Pb)-Sr-Ca-CuO system were prepared by depositing the film onto silver substrate by d.c. electrodeposition technique with dimethyl sulphoxide bath in order to examine the effect of Pb addition to the BSCCO system. The films were deposited at the potential of -0.8 V vs saturated calomel electrode (SCE) onto the silver substrate. The different preparative parameters such as deposition potential, deposition time were studied and optimized. These films were then oxidized electro-chemically at room temperature in an alkaline (1 N KOH) solution, and also at 600°C temperature in an oxygen atmosphere. The films showed the superconducting behaviour, with T_c values ranging between 85 K and 96 K, respectively.     

Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition

ZnO thin films were grown on Si(111) substrates by low-pressure metal-organic chemical vapor deposition.The crystal structures and electrical properties of as-grown sample were investigated by scanning electron microscopy(SEM) and conductive atomic force microscopy(C-AFM).It can be seen that with increasing growth temperature,the surface morphology of ZnO thin films changed from flake-like to cobblestones-like structure.The current maps were simultaneously recorded with the topography,which was gained by C-AFM contact mode.Conductivity for the off-axis facet planes presented on ZnO grains enhanced.Measurement results indicate that the off-axis facet planes were more electrically active than the c-plane of ZnO flakes or particles probably due to lower Schottky barrier height of the off-axis facet planes.     

PLD方法制备CaCu3Ti4O12薄膜结构研究

采用脉冲激光沉积法(PLD)分别在LaAlO3(100)以及MgO(100)基片上,在不同的沉积温度下,制备具有体心立方类钙钛矿结构的CaCu3Ti4O12(CCTO)薄膜.在LAO基片上生长的CCTO薄膜,X射线衍射(XRD)分析表明沉积温度在680℃以上可以实现 (400)取向生长,740℃薄膜可以实现cubic-on-cubic的方式外延生长.原子力显微镜(AFM)和扫描电子显微镜(SEM)分析分别显示CCTO薄膜的表面平整,界面清晰.后位的反射高能电子衍射(RHEED)观察到CCTO薄膜的电子衍射图谱,为点状.在MgO基片上,由于薄膜与基片较大的晶格失配,通过生长具有(100)和(110)取向的LaNiO3(LNO)缓冲层,诱导后续生长的CCTO薄膜随着温度的提高,由(220)取向生长转变成(220),(400)取向生长.     

Current transport mechanism in CdS thin films prepared by vacuum evaporation method at substrate temperatures below room temperature

CdS thin films were deposited by vacuum deposition method at low substrate temperatures instead of the commonly used vacuum deposition at high substrate temperatures (T_S > 300 K). The effect of low substrate temperature on the current transport mechanisms in polycrystalline CdS thin films has been studied as a function of temperature over the temperature range 100-300 K. Both thermally assisted tunneling of carriers through and thermionic emission over the grain boundary potential have contributions to the conduction in the range 250-300 K for the sample prepared at 300 K substrate temperature. The dominant conduction mechanism of the samples prepared at 200 K and 100 K is determined as thermionic emission over 200 K and Mott's hopping process below 200 K. The Mott's hopping process is not applicable for the sample prepared at 300 K.     

Structural study of the initial growth of nanocrystalline CdS thin films in a chemical bath

Nanocrystalline cadmium sulfide CdS thin films with relevance for optical applications were synthesized from aqueous solutions by chemical bath deposition. Grazing incidence X-ray diffraction shows that the films formed on glass or silicon substrates are made up of nanocrystalline particles. About 80% of the particles have a diameter of 5 ± 1 nm. The nanoparticles have either sphalerite or wurtzite structure. The presence of the sphalerite phase is a signature of a highly non-equilibrium state of the nanocrystalline film. Kinetic studies show that the size of the nanocrystals and the relative fraction of the two phases do not depend on the deposition time once it exceeds a duration of 30 min. For longer times, the particle characteristics remain constant while the thickness of the film grows. Thermodynamical analysis of ionic equilibria allows to choose the reaction bath composition for the formation of cadmium hydroxide Cd(OH)₂. The experiments provide strong evidence that the beginning of the deposition of CdS is accompanied by a formation of cadmium hydroxide Cd(OH)₂.     

脉冲激光沉积方法生长硅基ZnO薄膜的特性

用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜.X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn-O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构.利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜.     

Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method

During last three decades, successive ionic layer adsorption and reaction (SILAR) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, semiconductors, metals and temperature sensitive substrates (like polyester) can be used since the deposition is carried out at or near to room temperature. As a low temperature process, it also avoids oxidation and corrosion of the substrate. The prime requisite for obtaining good quality thin film is the optimization of preparative provisos viz. concentration of the precursors, nature of complexing agent, pH of the precursor solutions and adsorption, reaction and rinsing time durations etc. In the present review article, we have described in detail, successive ionic layer adsorption and reaction (SILAR) method of metal chalcogenide thin films. An extensive survey of thin film materials prepared during past years is made to demonstrate the versatility of SILAR method. Their preparative parameters and structural, optical, electrical properties etc are described. Theoretical background necessary for the SILAR method is also discussed.     

石墨衬底上具有（220）/（400）择优取向多晶硅薄膜的制备及性质

在石墨衬底上分别制备了具有(220)和(400)择优取向的多晶硅薄膜.首先利用磁控溅射技术直接在石墨衬底上制备非晶硅薄膜层,以及先制备 ZnO 过渡层,再在 ZnO 过渡层上制备非晶硅薄膜层;然后采用快速退火法对非晶硅薄膜晶化,使其形成多晶硅薄膜籽晶层.XRD 测试表明,未引入 ZnO 过渡层的多晶硅薄膜籽晶层具有高度(220)择优取向,而引入 ZnO 过渡层的多晶硅薄膜籽晶层具有高度(400)择优取向;最后在多晶硅籽晶层上通过对流辅助化学气相沉积(CoCVD)制备多晶硅薄膜.根据 SEM、XRD、拉曼测试表明,多晶硅薄膜的性质延续了多晶硅籽晶层的性质,未引入 ZnO 过渡层的样品,具有高度(220)择优取向.引入 ZnO 过渡层后的样品,具有高度(400)择优取向,(400)择优取向的转变有利于后续多晶硅薄膜太阳电池的制作.同时对 Si(220)和 Si (400)择优取向的形成原因做了初步分析.     

Structural and optical properties of CdS thin films grown by chemical bath deposition

Cubic cadmium sulphide (CdS) thin films with (111) preferential orientation were prepared by chemical bath deposition (CBD) technique, using the reaction between NH₄OH, CdSO₄ and CS(NH₂)₂. The films properties have been investigated as a function of bath temperature and deposition time. Structural properties of the obtained films were studied by X-ray diffraction analysis. The structural parameters such as crystallite size have been evaluated. The transmission spectra, recorded in the UV visible range reveal a relatively high transmission coefficient (70%) in the obtained films. The transmittance data analysis indicates that the optical band gap is closely related to the deposition conditions, a direct band gap ranging from 2.0 eV to 2.34 eV was deduced. The electrical characterization shows that CdS films' dark conductivities can be controlled either by the deposition time or the bath temperature.     

Preparation and characteristics of CdS thin films by dip-coating method using its nanocrystal ink

CdS nanocrystals were synthesized by hot injection method using EG as solvent, polyvinylpyrrolidone as dispersant, triethanolamine as stabilizing agent, Cd(NO₃)₂·4H₂O and H₂NCSNH₂ as cadmium and sulfur sources respectively. The synthesized nanocrystals were washed and ultrasonically dispersed with absolute ethanol to prepare nanocrystal ink. CdS thin films were deposited by dip-coating glass substrates with the nanocrystal ink and annealed at 450 °C in Ar atmosphere. Crystalline phase, morphology and element stoichiometry of the CdS nanocrystals derived from different synthesis temperatures were investigated by XRD, TEM and EDS. Surface morphology, crystalline phase and optical absorption spectrum of the CdS films were characterized by SEM, XRD and UV-Vis.     

微弧氧化生成钛酸盐系铁电薄膜研究

为开发新的铁电薄膜制备工艺,需将Ti板微弧氧化.采用Ba(OH)2、Ba(CH3COO)2、BaCl2、Ba(OH)2+Ba(NO3)2及Pb(CH3COO)2对Ti板进行微弧氧化试验,并对生成的薄膜进行物相组成和显微形貌的分析.结果表明:Ti板在BaCl2、Pb(CH3COO)2及Ba(OH)2+Ba(NO3)2中不...     

Effect of deposition temperature on morphology and magnetic properties of Co50Fe50 thin films produced by femtosecond pulsed laser deposition

Deposition temperature effect on morphological, topological and magnetic characteristics of nanoparticle-assembled Co₅₀Fe₅₀ films produced by femtosecond pulsed laser deposition (fs-PLD) on Kapton substrate was investigated. For substrate temperature T_s ≥ 550 K, a decrement of the nanoparticle's aggregates and an increment of the nanoparticle's density were observed with respect to room temperature deposition; this in association with a strong increase of the magnetoelastic anisotropy energy lead to a reduction of the remanence ratio, a significant rise of the saturation and coercive fields and an enhancement of the saturation magnetization. The results are discussed focusing on: i) the correlation between films structure and their magnetic behavior; ii) the role of the different anisotropy energies in determining the harder in-plane magnetic behavior for T_s ≥ 550 K. The thermal strain of Kapton substrate holds an important role in generating morphological and topological characteristics of the fs-PLD films and corresponding magnetic properties.     

Deposition of yttria-stabilized zirconia buffer layer on Si and its suitability for Y-Ba-Cu-O thin films

The deposition of yttria-stabilized zirconia (YSZ) as buffer layer on (100) silicon has been studied by rf sputtering with a view to subsequently preparing superconducting films of YBa₂Cu₃O _x on it. As-deposited films were found to be (100) oriented. The thermal mismatch and reaction between Si and YSZ at high temperatures were found to give rise to cracks in the films. Grain growth of buffer layer on annealing helped in the formation of superconducting phase.