Thermal and mechanical properties of Si3N4 ceramics obtained via two-step sintering

Si₃N₄ ceramics were prepared using novel two-step sintering method by mixing α-Si₃N₄ as raw material with nanoscale Y₂O₃–MgO via Y(NO₃)₃ and Mg(NO₃)₂ solutions. Si₃N₄ composite powders with in situ uniformly distributed Y₂O₃–MgO were obtained through solid–liquid (SL) mixing route. Two-step sintering method consisted of pre-deoxidization at low temperature via volatilization of in situ-formed MgSiO₃ and densification at high temperature. Variations in O, Y, and Mg contents in Si₃N₄–Y₂O₃–MgO during first sintering step are discussed. O and Mg contents decreased with increasing temperature because SiO₂ on Si₃N₄ surface reacted with MgO to form low-melting-point MgSiO₃ compound, which is prone to volatilize at high temperature. By contrast, Y content hardly changed due to high-temperature stability of Y–Si–O–N quaternary compound. In the second sintering step, skeleton body was densified, and the formation of Y₂Si₃O₃N₄ secondary phase occurred simultaneously. Two-step sintered Si₃N₄ ceramics had lower total oxygen content (1.85 wt%) than one-step sintered Si₃N₄ ceramics (2.51 wt%). Therefore, flexural strength (812 MPa), thermal conductivity (92.1 W/m·K), and fracture toughness (7.6 MPa?m^1/2) of Si₃N₄ ceramics prepared via two-step sintering increased by 28.7%, 16.9%, and 31.6%, respectively, compared with those of one-step sintered Si₃N₄ ceramics.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.     

Mechanical properties and thermal conductivity of Si3N4 ceramics with YF3 and MgO as sintering additives

Si₃N₄ ceramic was densified by hot pressing sintering at 1750 °C for 1 h under the uniaxial pressure of 20 MPa in N₂ atmosphere with YF₃ and MgO as sintering additives. The thermal conductivities of SN-YF specimen were both higher than that of Si₃N₄ ceramic sintered with Y₂O₃ and MgO before and after annealing treatment. The grain size and aspect ratio in SN-YF specimen were both bigger than those in the SN-YO specimen, which was beneficial for the creation of high thermal conductive path. On the other hand, the improvement of thermal conductivity by the addition of YF₃ might be attributed to the reduction of the grain boundary phase due to the evaporation of SiF₄, and the resultant reduction of the lattice oxygen due to the reduction of SiO₂ in the grain boundary phase. The {0001} direction of grains had the probability of growing along the hot pressing direction in the SN-YF specimen, which was beneficial for the improvement of thermal conductivity while the {0001} direction grew along the X₀-Y₀ plane in the SN-YO specimen. The mechanical properties of SN-YF specimen were comparable to those of SN-YO specimen.     

Fabrication of highly dense Si3N4 via record low-content additive system for low-temperature pressureless sintering

Dense Si₃N₄ ceramics were fabricated by pressureless sintering at a low temperature of 1650°C with a short holding period of 1 h under a nitrogen atmosphere. The role of ternary oxide additives (Y₂O₃–MgO–Al₂O₃, Y₂O₃–MgO–SiO₂, Y₂O₃–MgO–ZrO₂) on the phase, microstructure, and mechanical properties of Si₃N₄ was examined. Only 5 wt.% of Y₂O₃–MgO–Al₂O₃ additive was sufficient to achieve >98% of theoretical density with remarkably high biaxial strength (∼1200 MPa) and prominent hardness (∼15.5 GPa). Among the three additives used, Y₂O₃–MgO–Al₂O₃ displayed the finest grain diameter (0.54 μm), whereas Y₂O₃–MgO–ZrO₂ produced the largest average grain diameter (∼0.95 μm); the influence was seen on their mechanical properties. The low additive content Si₃N₄ system is expected to have superior high-temperature properties compared to the system with high additive content. This study shows a cost-effective fabrication of highly dense Si₃N₄ with excellent mechanical properties.     

Microstructure and thermal conductivity of gas-pressure-sintered Si3N4 ceramic: the effects of Y2O3 additive content

Si₃N₄ ceramics were sintered at 1900 °C under a nitrogen pressure of 1 MPa using Y₂O₃-MgO additives. The effects of Y₂O₃ content (0.5-4 mol%) on microstructure and thermal conductivity were systematically investigated. The increasing Y₂O₃ content led to increases in amount and viscosity of liquid phase during sintering, which induced a “bimodal to normal” transition in distribution of grain size, decreased Si₃N₄/Si₃N₄ contiguity and enhanced devitrification degree of intergranular phase in sintered bulks. Moreover, the decreasing Y₂O₃ content was found to improve the elimination efficiency of SiO₂ impurity during sintering, resulting in lower lattice oxygen content in densified specimens. The microstructure had a strong effect on thermal conductivity. The samples sintered for 3 h gained an increase of thermal conductivity from 65 to 73 W·m^-1 K^-1 with increasing Y₂O₃ content, while the samples sintered for 12 h obtained a substantial increase of thermal conductivity from 87 to 132 W·m^-1 K^-1 with decreasing Y₂O₃ content.     

Effects of Y2O3/MgO ratio on mechanical properties and thermal conductivity of silicon nitride ceramics

In this work, the effects of Y₂O₃/MgO ratio on the densification behavior, phase transformation, microstructure evolution, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were investigated. Densified samples with bimodal microstructure could be obtained by adjusting the ratio of Y₂O₃/MgO. It was found that a low Y₂O₃/MgO ratio facilitated the densification of Si₃N₄ ceramics while a high Y₂O₃/MgO ratio benefited the phase transformation of Si₃N₄ ceramics. Best mechanical properties (flexural strength of 875 MPa, and fracture toughness of 8.25 MPa·m^1/2, respectively) and optimal thermal conductivity of 98.04W/(m·K) were achieved in the sample fabricated with Y₂O₃/MgO ratio of 3:4 by sintering at 1900°C for 4 h.     

Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Architectural design and cryogenic synthesis of Si3N4@(TiN–Si3N4) for high conductivity

Si₃N₄@(TiN–Si₃N₄) composites with heteroshelled structure were designed for enhanced conductivity and successfully synthesized through the simultaneous reduction and in‐situ cocoating process in liquid ammonia at around ?40°C. The heteroshells were composed of nanosized TiN and Si₃N₄ particles, which were amorphous with the size ranging from 10 to 40 nm. Using spark plasma sintering, dense bulk composite with >98.1% relative density of theoretical value were obtained and their electrical conductivity were increased to an adequate value (6.62 × 10² S·cm^?1) for electrical discharge machining by compositing 15 vol% TiN to Si₃N₄, which is superior to the previous reports. The excellent electric performance could be attributed to the heteroshelled structure which guarantees the conductive network can be formed and kept with minimal TiN content. The nanosized Si₃N₄ powders in the shells reduce the content of conductive powders and limit the growth of TiN particles.     

Fabrication and properties of pressure-sintered reaction-bonded Si3N4 ceramics with addition of Eu2O3–MgO–Y2O3

Dense pressure-sintered reaction-bonded Si₃N₄ (PSRBSN) ceramics were obtained by a hot-press sintering method. Precursor Si powders were prepared with Eu₂O₃–MgO–Y₂O₃ sintering additive. The addition of Eu₂O₃–MgO–Y₂O₃ was shown to promote full nitridation of the Si powder. The nitrided Si₃N₄ particles had an equiaxial morphology, without whisker formation, after the Si powders doped with Eu₂O₃–MgO–Y₂O₃ were nitrided at 1400 °C for 2 h. After hot pressing, the relative density, Vickers hardness, flexural strength, and fracture toughness of the PSRBSN ceramics, with 5 wt% Eu₂O₃ doping, were 98.3 ± 0.2%, 17.8 ± 0.8 GPa, 697.0 ± 67.0 MPa, and 7.3 ± 0.3 MPa m^1/2, respectively. The thermal conductivity was 73.6 ± 0.2 W m^?1 K^?1, significantly higher than the counterpart without Eu₂O₃ doping, or with ZrO₂ doping by conventional methods.     

Enhanced thermal conductivity in Si3N4 ceramics by carbonizing polydopamine coatings

To enhance the thermal conductivity of Si₃N₄, a polydopamine (PDA) coating was creatively introduced into ceramics sintered with different additive contents through a two-step sintering process consisting of a first treatment at 1500 °C for 8 h followed by 12 h at 1900 °C under 1 MPa nitrogen pressure. After the first-step sintering, the PDA-coated sample exhibited a higher elimination effect of the liquid phase and an increase in the N/O ratio, which allowed the additives to directly interact with the Si₃N₄ grains, resulting in a microstructure with more and larger rod-shaped grains. After the second-step sintering, the densified samples of the PDA-coating attained slightly coarser rod-shaped grains, lower O content, higher N/O ratio and peak intensity (XRD) of the Y₂Si₃O₃N₄ phase, thicker grain boundary film, and secondary phases mainly residing in multigrain junctions. Consequently, the thermal conductivity of all the PDA-coated samples typically showed a 10–12% increment in comparison to the PDA-free samples for each additive content.     

Nitrogen-doped-CNTs/Si3N4 nanocomposites with high electrical conductivity

Novel highly electrically conducting nanocomposites consisting of a silicon nitride (Si₃N₄) ceramic matrix containing up to 13.6 vol.% of nitrogen-doped multi-walled carbon nanotubes (CNx) were fabricated. As-synthesized CNx were treated with hydrogen peroxide in order to efficiently detach/isolate the nanotubes from bundles, then they were mixed with the ceramic powders and fully densified using the spark plasma sintering (SPS) technique. Composites containing 13.6 vol.% CNx reached an electrical conductivity of 2174 S m⁻¹ that is the highest value reported hitherto for carbon nanotubes/Si₃N₄ nanocomposites. The nitrogen doping also favored a strong mechanical interlocking between the nanotubes and the Si₃N₄ matrix; when compared to the undoped carbon nanotubes. These novel nanocomposites could be used in devices associated to power generation or telecommunications.     

A Novel Si3N4–SiC Ceramic Used for Volumetric Receivers

Si₃N₄–SiC composite ceramics used for volumetric receivers were fabricated by pressureless sintering of micrometer SiC, Si₃N₄, andalusite, and other minor additions powders. Mechanical, thermal expansion, thermal conductivity, and thermal shock resistance properties were tested at different sintering temperatures. The best sintering temperature of optimum formula A2 is 1360°C, and the bending strength reaches 79.60 Mpa. And moreover, its thermal expansion coefficient is 6.401 × 10^?6/°C, thermal conductivity is 7.83 W/(m K), and no crack occurs even subjected to 30 cycles thermal shock with a bending strength increase rate of 4.72%. X‐ray diffraction results show that the phase constituents of the sintered products mainly consist of SiC, Si₃N₄, mullite, and quartz. Microstructure that is most appropriate and exhibits maximal thermal shock resistance was detected using SEM. The porosity of Si₃N₄–SiC ceramic foam prepared from formula A2 is 95%, which provides a rapid and steady action for the receiver. The evaluation of the present foam shows that Si₃N₄–SiC ceramic composite is a good candidate for volumetric receivers.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

High-purity stoichiometric Si3N4 ceramics through trimethylsilyl-substituted polysilazanes

Trimethylsilyl-substituted polysilazanes were designed and successfully synthesized. They were used to fabricate high-purity stoichiometric Si₃N₄ ceramics through pyrolysis process. Trimethylsilyl groups improved the stability of polysilazanes and easily escaped during pyrolysis, which effectively reduced oxygen and carbon content in the final polymer-derived Si₃N₄. The C content of Si₃N₄ ceramic was below 0.06 wt%, and the O content was below 1.2 wt%. The Si₃N₄ ceramics remained amorphous up to 1400°C, yet they were completely transformed into α-Si₃N₄ at 1500°C. Synergistic effect from low oxygen and carbon content contributed to highly stable amorphous state of Si₃N₄ till high temperatures. This amorphous Si₃N₄ ceramics could be used in cutting-edge technology where high purity is compulsory.     

Densification and Thermal Stability of Hot‐Pressed Si3N4–ZrB2 Ceramics

Densification and thermal stability of hot‐pressed Si₃N₄–ZrB₂ ceramics with and without additives were investigated in N₂ atmosphere. The addition of MgO–Yb₂O₃, MgO–Y₂O₃, and Al₂O₃–Yb₂O₃ resulted in significant increase in relative density of the ceramics hot‐pressed at 1500°C from 48.5% to 98.0%, 97.3%, and 95.6%, respectively. There was weak reaction of ZrB₂ with N₂ to form ZrN in hot‐pressed ceramics. Then heat treatment at 1550°C resulted in the further reactions to produce ZrN, ZrSi₂, and BN. The Si₃N₄–ZrB₂ ceramics with MgO–Yb₂O₃ showed much better thermal stability as compared to the ceramics with Al₂O₃–Yb₂O₃. The small difference in density led to the obvious difference in thermal stability. Therefore, Si₃N₄–ZrB₂ ceramics should be densified to full density, to obtain high thermal stability.     

Diamond dispersed Si3N4 composites obtained by pulsed electric current sintering

30 vol.% 2 and 30 μm diamond dispersed Si₃N₄ matrix composites were prepared by pulsed electric current sintering (PECS) for 4 min at 100 MPa in the 1550–1750 °C range. The densification behaviour, microstructure, Si₃N₄ phase transformation and stiffness of the composites were assessed, as well as the thermal stability of the dispersed diamond phase. Monolithic Si₃N₄ with 4 wt% Al₂O₃ and 5 wt% Y₂O₃ sintering additives was fully densified at 1550 °C for 4 min and 60 MPa. The densification and α to β-Si₃N₄ transformation were substantially suppressed upon adding 30 vol.% diamond particles. Diamond graphitisation in the Si₃N₄ matrix was closely correlated to the sintering temperature and grit size. The dispersed coarse grained diamonds significantly improved the fracture toughness of the diamond composite, whereas the Vickers hardness was comparable to that of the Si₃N₄ matrix ceramic. The Elastic modulus measurements were found to be an excellent tool to assess diamond graphitisation in a Si₃N₄ matrix.     

Enhanced thermal conductivity in Si3N4 ceramic by addition of a small amount of carbon

In order to fabricate Si₃N₄ ceramic with enhanced thermal conductivity, 93 mol%α-Si₃N₄-2 mol%Yb₂O₃-5 mol%MgO powder mixture was doped with 5 mol% carbon, and sintered firstly at 1500 °C for 8 h and subsequently at 1900 °C for 12 h under 1 MPa nitrogen pressure. During the first-step sintering, the carbothermal reduction process significantly reduced the oxygen content and increased the N/O ratio of intergranular secondary phase, resulting in the precipitation of Yb₂Si₄O₇N₂ crystalline phase, higher β-Si₃N₄ content and larger rod-like β-Si₃N₄ grains in the semi-finished Si₃N₄ sample. After the second-step sintering, the final dense Si₃N₄ product acquired coarser elongated grains, lower lattice oxygen content, tighter Si₃N₄-Si₃N₄ interfaces and more devitrified intergranular phase due to the further carbothermal reduction of oxynitride secondary phase. Consequently, the addition of carbon enabled Si₃N₄ ceramic to gain a significant increase of ∼25.5% in thermal conductivity from 102 to 128 W∙m⁻¹ K⁻¹.     

In situ synthesis of Si2N2O/Si3N4 composite ceramics using polysilyloxycarbodiimide precursors

In situ synthesis of Si₂N₂O/Si₃N₄ composite ceramics was conducted via thermolysis of novel polysilyloxycarbodiimide ([SiOSi(NCN)₃]_n) precursors between 1000 and 1500 °C in nitrogen atmosphere. The relative structures of Si₂N₂O/Si₃N₄ composite ceramics were explained by the structural evolution observed by electron energy-loss spectroscopy but also by Fourier transform infrared and ²⁹Si-NMR spectrometry. An amorphous single-phase Si₂N₂O ceramic with porous structure with pore size of 10–20 μm in diameter was obtained via a pyrolyzed process at 1000 °C. After heat-treatment at 1400 °C, a composite ceramic was obtained composed of 53.2 wt.% Si₂N₂O and 46.8 wt.% Si₃N₄ phases. The amount of Si₂N₂O phase in the composite ceramic decreased further after heat-treatment at 1500 °C and a crystalline product containing 12.8 wt.% Si₂N₂O and 87.2 wt.% Si₃N₄ phases was obtained. In addition, it is interesting that residual carbon in the ceramic composite nearly disappeared and no SiC phase was observed in the final Si₂N₂O/Si₃N₄ composite.     

Effect of MgO/Al2O3 ratio on the crystallization behaviour of Li2O–MgO–Al2O3–SiO2 glass-ceramic and its wettability on Si3N4 ceramic

The composition governs the crystallization ability, the type and content of crystal phases of glass-ceramics. Glass-ceramic joining materials have generated more research interest in recent years. Here, we prepared a novel Li₂O–MgO–Al₂O₃–SiO₂ glass-ceramic for the application of joining Si₃N₄ ceramics. We investigated the influence of the MgO/Al₂O₃ composition ratio on microstructure and crystallization behaviour. The crystallization kinetics demonstrated that the glasses had excellent crystallization ability and high crystallinity. β-LiAlSi₂O₆ and Mg₂SiO₄ were precipitated from the glass-ceramics, and the increase of MgO concentration was conducive to the precipitation of Mg₂SiO₄. Among the glass-ceramic samples, the thermal expansion coefficient of LMAS2 glass-ceramic was 3.1 × 10^?6/°C, which was very close to that of Si₃N₄ ceramics. The wetting test showed that the final contact angle of the glass droplet on the Si₃N₄ ceramic surface was 32° and the interface was well bonded.