Light controlled resistive switching and photovoltaic effects in ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

In this work, the structural and ferroelectric properties of 0.5Ba(Zr_0.2Ti_0.8)O₃-0.5(Ba_0.7Ca_0.3)TiO₃ (0.5BZT-0.5BCT) thin films deposited at different pulse repetition rates were studied. The films deposited at pulse repetition rate of 1 Hz display the optimum values of ferroelectric polarization and dielectric permittivity and are chosen for the investigation of resistive switching and photovoltaic studies. The Pt/0.5BZT-0.5BCT/ITO capacitors show the electroforming free resistive switching (RS) and is explained based on the polarization modulation of the Schottky barrier at the 0.5BZT-0.5BCT/ITO interface. Furthermore, it is shown that the RS ratio and switching voltage can be tuned with white light illumination. The capacitors display photovoltaic effect with the open circuit voltage ≈0.8 V and the short circuit current density ≈72.6 μAcm⁻². The photovoltaic efficiency is found to be ≈0.010% and is greater than that of other perovskite ferroelectric thin films. The underlying mechanism for enhanced RS and photovoltaic effects is highlighted.     

Ferroelectric Photocurrent Effect in Polycrystalline Lead‐Free (K0.5Na0.5)(Mn0.005Nb0.995)O3 Thin Film

We deposited (K_0.5Na_0.5)(Mn_0.005Nb_0.995)O₃ (KNMN) thin films on Pt(111)/TiO₂/SiO₂/Si(100) substrates with a top electrode of indium tin oxide and investigated photocurrent properties in the wavelength range of 300?400 nm. Before the photocurrent measurement, the KNMN film was poled by applying a DC voltage. The photocurrents strongly depend on the wavelength of the incident photon energy. The photocurrents of the first measurement with poling in the up (?5 V) and down (+5 V) states were 21 and 3.2 nA/cm², respectively, at 344 nm. The difference in the photocurrents in both poling directions was explained by a space charge due to an asymmetric Schottky barrier height, which was caused by an internal electric field and polarization in the KNMN thin film.     

Large Piezoresponse and Ferroelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–Bi(Mg0.5Ti0.5)O3 Thin Films Prepared by Chemical Solution Deposition

Bulk ceramic 72.5 mol%(Bi_0.5Na_0.5)TiO₃–22.5 mol%(Bi_0.5K_0.5)TiO₃–5 mol%Bi(Mg_0.5Ti_0.5)O₃ (BNT–BKT–BMgT) has previously been reported to show a large high‐field piezoelectric coefficient (d₃₃* = 570 pm/V). In this work, the same composition was synthesized in thin film embodiments on platinized silicon substrates via chemical solution deposition. Overdoping of volatile cations in the precursor solutions was necessary to achieve phase‐pure perovskite. An annealing temperature of 700°C resulted in good ferroelectric properties (P_max = 52 μC/cm² and P_r = 12 μC/cm²). Quantitative compositional analysis of films annealed at 650°C and 700°C indicated that near ideal atomic ratios were achieved. Compositional fluctuations observed through the film thickness were in good agreement with the existence of voids formed between successive spin‐cast layers, as observed with electron microscopy. Bipolar and unipolar strain measurements were performed via double laser beam interferometry and a high effective piezoelectric coefficient (d_33,f) of approximately 75 pm/V was obtained.     

High–Energy‐Storage Density Capacitors of Bi(Ni1/2Ti1/2)O3–PbTiO3 Thin Films with Good Temperature Stability

High–energy‐storage density capacitors with thin films of 0.5Bi(Ni_1/2Ti_1/2)O₃–0.5PbTiO₃ (BNT–PT) were fabricated by chemical solution deposition technique on Pt/Ti/SiO₂/Si substrates. The dense thin films with pure‐phase perovskite structure could be obtained by annealing at 750°C. High capacitance density (~1925 nF/cm² at 1 kHz) and extremely high‐energy density (~45.1 J/cm³) under an electric field of 2250 kV/cm were achieved at room temperature. The energy‐storage density and efficiency varied little in a wide temperature range from ?190°C to 250°C. The high–energy‐storage density and good temperature stability make BNT–PT films promising candidates for high power electric applications.     

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(Na0.5Bi0.5)TiO3–xBiAlO3 Lead‐Free Piezoelectric Thin Films

Lead‐free sodium bismuth titanate–aluminate bismuth [0.97(Na_0.5Bi_0.5)TiO₃–0.03BiAlO₃] solid‐solution films deposited on (100) Pt/TiO₂/SiO₂/Si substrates by a sol–gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2P_r of 38 μC/cm² and a leakage current density of 10^?7–10^?6 A/cm² (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT‐BA films a viable lead‐free alternative to the lead‐based materials in such as biosensors and ultrasonic transducers.     

Structural,Electrical, and Ferroelectric Properties of Nb‐Doped Na0.5Bi4.5Ti4O15 Thin Films

Ferroelectric Na_0.5Bi_4.5Ti₄O₁₅ (NaBTi) and donor Nb‐doped Na_0.5Bi_4.5Ti_3.94Nb_0.06O₁₅ (NaBTiNb) thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates using a chemical solution deposition method. The doping with Nb⁵⁺‐ions leads to tremendous improvements in the ferroelectric properties of the NaBTiNb thin film. Room‐temperature ferroelectricity with a large remnant polarization (2P_r) of 64.1 μC/cm² and a low coercive field (2E_c) of 165 kV/cm at an applied electric field of 475 kV/cm was observed for the NaBTiNb thin film. The polarization fatigue study revealed that the NaBTiNb thin film exhibited good fatigue endurance compared with the NaBTi thin film. Furthermore, the NaBTiNb thin film showed a low leakage current density, which was 1.48 × 10^?6 A/cm² at an applied electric field of 100 kV/cm.     

Microstructural,ferroelectric, and photoluminescent properties of (100)‐oriented Sm3+‐doped Na0.5Bi0.5TiO3 thin films

(100)_C‐oriented Na_0.5Bi_0.5‐xSm_xTiO₃ (NBST) lead‐free ferroelectric thin films were prepared on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method, and their microstructural, dielectric, ferroelectric, and photoluminescent properties were studied. X‐ray diffraction and scanning electron microscopy analysis indicated that both the grain size and (100)_C orientation degree of NBST thin films were decreased by doping Sm³⁺ ions. Raman spectra showed that structural symmetry of NBST thin films decreased at low Sm³⁺ doping concentration and then increased at high doping concentration of Sm³⁺ ions. An appropriate amount of Sm³⁺ dopants was confirmed to enhance dielectric and ferroelectric properties of the NBST thin films. Among all the compositions, the Na_0.5Bi_0.492Sm_0.008TiO₃ thin film exhibited the largest remnant polarization (2P_r) of 27.3 μC/cm² and high dielectric constant of 1068, as well as a low dielectric loss of 0.04. Temperature‐ and frequency‐dependent dielectric characteristics illustrated the relaxor ferroelectric behavior of Na_0.5Bi_0.492Sm_0.008TiO₃ thin film. Meanwhile, the Na_0.5Bi_0.492Sm_0.008TiO₃ thin film also showed optimal orange‐red emission at 600 nm, which is originating from the ⁴G_5/2 → ⁴H_7/2 transition of Sm³⁺ ions.     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

Enhanced dielectric and energy-storage properties in BiFeO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Lead free Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ thin films doped with BiFeO₃ (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO₂/Si substrates by sol-gel/spin coating technique and the effects of BiFeO₃ content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10⁻⁴ A/cm³, ~ 978^, ~ 0.028 and ~ 74.13 μC/cm² at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm³ and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices.     

Enhanced switchable ferroelectric photovoltaic in BiFeO3 based films through chemical-strain-tuned polarization

Ferroelectric photovoltaic (FE-PV) materials have generated widespread attention due to their unique switchable photovoltaic behavior, but suffering from low photocurrent and remanent polarization. Herein, enhanced ferroelectric polarization and switchable photovoltaic in BiFeO₃ based thin films were achieved by the optimization of Bi content. The compact and uniform films with few defects were obtained by the control of chemical composition. The remanent polarization increased from 3.4 to 73.9 μC cm^?2 showing a qualitative leap. Intriguingly, the control range of photovoltaic signal between two polarization directions of the short-circuit current density (J_SC) and open circuit (V_OC) in present films exhibited an increase of 99.2% and 278.9%, respectively. It is suggested that the ferroelectric polarization was the main driving force for enhancing switchable ferroelectric photovoltaic. Therefore, the present work outstands a simple idea to enhance switchable ferroelectric photovoltaic based on the chemical engineering, providing a promising pathway for the development of photovoltaic devices.     

Highly (100)‐Oriented Bi(Ni1/2Hf1/2)O3‐PbTiO3 Relaxor‐Ferroelectric Films for Integrated Piezoelectric Energy Harvesting and Storage System

Highly (100)‐oriented 0.38Bi(Ni_1/2Hf_1/2)O₃‐0.62PbTiO₃ relaxor‐ferroelectric films were fabricated on Pt(111)/Ti/SiO₂/Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity , a low dissipation factor (tan δ < 5%), and strong relaxor‐like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm³ was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm³ obtained from films with random orientation. Furthermore, the PbO‐seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)‐oriented 0.38Bi(Ni_1/2Hf_1/2)O₃‐0.62PbTiO₃ films could be promising candidates for applications in high‐energy storage capacitors, high‐performance MEMS devices, and particularly for potential applications in the next‐generation integrated multifunctional piezoelectric energy harvesting and storage system.     

High‐Performance (Na0.5K0.5)NbO3 Thin Film Piezoelectric Energy Harvester

The pseudocubic structure of a (Na_0.5K_0.5)NbO₃ (NKN) film grown on a Pt/Ti/SiO₂/Si substrate changed to an orthorhombic structure when the film was transferred onto a polyimide substrate. Piezoelectric constant for the transferred NKN film increased considerably from 74 ± 11 to 120 ± 18 pm/V because the crystal structure of the film had changed from pseudocubic to orthorhombic. A gold interdigitated electrode was deposited onto the transferred NKN film to synthesize a NKN piezoelectric energy harvester. The NKN piezoelectric energy harvester was poled before bending under a 100 kV/cm DC electric field across the electrodes. When a strain of 0.85% and a strain rate of 4.05%/s were applied to the NKN piezoelectric energy harvester, it produced a maximum output voltage of 1.9 V and a current of 38 nA, corresponding to a power density of 2.89 μW/cm³.     

The microstructure,ferroelectric and dielectric behaviors of Na0.5Bi0.5(Ti,Fe)O3 thin films synthesized by chemical solution deposition: Effect of precursor solution concentration

Fe-doped Na_0.5Bi_0.5TiO₃ (NBTFe) thin films were prepared directly on indium tin oxide/glass substrates using a chemical solution deposition method combined with sequential layer annealing. The X-ray diffraction, scanning electron microscopy and insulating/ferroelectric/dielectric measurements were utilized to characterize the NBTFe thin films. All the NBTFe thin films prepared by four precursor solutions with various concentrations of 0.05, 0.10, 0.20 and 0.30 M exhibit polycrystalline perovskite structures with different relative intensities of (l00) peaks. A large remanent polarization (P_r) of 33.90 μC/cm² can be obtained in NBTFe film derived with 0.10 M spin-on solution due to its lower leakage current and larger grain size compared to those of other samples. Also, it shows a relatively symmetric coercive field and large dielectric tunability of 36.34%. Meanwhile, the NBTFe thin film with 0.20 M has a high energy-storage density of 30.15 J/cm³ and efficiency of 61.05%. These results indicate that the electrical performance can be controlled by optimizing the solution molarity.     

Microwave dielectric and nonlinear optical studies on radio‐frequency sputtered Dy2O3‐doped KNN thin films

We report the effect of oxygen mixing percentage (OMP) on structural, microstructural, dielectric, linear, and nonlinear optical properties of Dy₂O₃‐doped (K_0.5Na_0.5)NbO₃ thin films. The (K_0.5Na_0.5)NbO₃ + 0.5 wt%Dy₂O₃ (KNN05D) ferroelectric thin films were deposited on to quartz and Pt/Ti/SiO₂/Si substrates by RF magnetron sputtering. An increase in the refractive index from 2.08 to 2.21 and a decrease in the optical bandgap from 4.30 to 4.28 eV indicate the improvement in crystallinity, which is also confirmed from Raman studies. A high relative permittivity (ε_r=281‐332) and low loss tangent (tanδ=1.2%‐1.9%) were obtained for the films deposited in 100% OMP, measured at microwave frequencies (5‐15 GHz). The leakage current of the films found to be as low as 9.90×10^?9 A/cm² at 150 kV/cm and Poole‐Frenkel emission is the dominant conduction mechanism in the films. The third order nonlinear optical properties of the KNN05D films were investigated using modified single beam z‐scan method. The third order nonlinear susceptibility (?χ⁽³⁾?) values of KNN05D films increased from 0.69×10^?3 esu to 1.40×10^?3 esu with an increase in OMP. The larger and positive nonlinear refractive index n₂=7.04×10^?6 cm²/W, and nonlinear absorption coefficient β=1.70 cm/W were obtained for the 100% OMP film, indicating that KNN05D films are good candidates for the applications in nonlinear photonics and high‐frequency devices.     

Solution Synthesis of BiFeO3 Thin Films onto Silicon Substrates with Ferroelectric,Magnetic, and Optical Functionalities

Single‐BiFeO₃ perovskite films onto Pt‐coated silicon substrates have been fabricated by chemical solution deposition using a synthesis strategy based on the use of nonhazardous reagents. Different routes were tested to obtain precursors for the deposition of the films, inferring that bismuth (III) nitrate and iron (III) 2,4‐pentanedionate dissolved in acetic acid and 1,3‐propendiol led to the best solution. Ferroelectric, magnetic, and optical functionalities were demonstrated in these films, obtaining a high ferroelectric polarization at room temperature, ~67 μC × cm^?2, a dependence of the magnetization with the film thickness, 0.60 and 2.50 emu × g^?1 for the ~215 and ~42‐nm‐thick films, and a direct band gap in the visible range, E_g ~2.82 eV. These results support the interest of solution methods for the fabrication of BiFeO₃ thin films onto the silicon substrates required in microelectronic devices.     

Morphotropic Phase Boundary in Solution‐Derived (Bi0.5Na0.5)1−xBaxTiO3 Thin Films: Part I Crystalline Structure and Compositional Depth Profile

In this work, ferroelectric (Bi_0.5Na_0.5)_1?xBa_xTiO₃ thin films were fabricated by chemical solution deposition (CSD) with compositions x = 0.050–0.150. Stoichiometric thin films (hereinafter BNBT) and others containing 10 mol% excesses of Bi³⁺ and Na⁺ (BNBTxs) were spin coated onto Pt/TiO₂/SiO₂/(100)Si substrates and crystallized by rapid thermal processing at 650°C for 60 s in oxygen atmosphere. Crystalline structure is studied by X‐ray diffraction using Cu anode (λ_Cu = 1.5406 ?) and synchrotron radiation (λ = 0.97354 ?). Rietveld refinement showed the coexistence of rhombohedral/tetragonal phases in the BNBT films for x values close to those reported for (Bi_0.5Na_0.5)_1?xBa_xTiO₃ bulk ceramics. Different volume fractions of the rhombohedral/tetragonal phases are detected as a function of the Ba²⁺ content. An apparent shift of the position of the morphotropic phase boundary (MPB) is observed in the BNBTxs films. Here, the MPB region appears for nominal Ba²⁺ molar values of x ~ 0.10 and the experiments using a grazing‐incidence synchrotron radiation indicate the existence of a crystalline phase with pyrochlore structure at the film surface. Rutherford backscattering experiments (RBS) revealed that the bismuth excess is not volatilized during the crystallization of the BNBTxs films which present inhomogeneous compositional depth profile and thick Bi_xPt bottom interfaces. The MPB BNBT films with x ~ 0.055 have a homogeneous compositional depth profile without appreciable bottom interfaces. Scanning electron micrographs reveal less porosity and higher grain sizes in the stoichiometric films than in those with Bi³⁺ and Na⁺ excesses.     

High‐temperature piezoelectric properties of 0‐3 type CaBi4Ti4O15:x wt%BiFeO3 composites

The 0‐3 type CaBi₄Ti₄O₁₅:30 wt%BiFeO₃ composite shows much better high‐temperature piezoelectric properties than the single‐phase CaBi₄Ti₄O₁₅ or BiFeO₃ ceramics. The composite with 0‐3 type connectivity exhibits a high density of 7.01 g/cm³, a saturated polarization of 21.5 μC/cm² and an enhanced piezoelectric d₃₃ of 25 pC/N. After the poled composite was annealed at 600°C, its d₃₃ is 21 pC/N at room temperature. Resistance of the composite decreases slowly from 10⁹ ohm at 20°C to ~10⁵ ohm at 500°C. Furthermore, the poled composite shows strong radial and thickness dielectric resonances at 20°C‐500°C.     

Structural and ferroelectric properties of chemical solution deposited (Nd,Cu) co-doped BiFeO3 thin film

Effects of (Nd, Cu) co-doping on the structural, electrical and ferroelectric properties of BiFeO₃ polycrystalline thin film have been studied. Pure and co-doped thin films were prepared on Pt(111)/Ti/SiO₂/Si(100) substrates by using a chemical solution deposition method. Significant improvements in the electrical and the ferroelectric properties were observed for the co-doped thin film. The remnant polarization (2P_r) and the coercive field (2E_c) of the co-doped thin film were 106 μC/cm² and 1032 kV/cm at an applied electric field of 1000 kV/cm, respectively. The improved properties of the co-doped thin film could be attributed to stabilized perovskite structures, reduced oxygen vacancies and modified microstructures.     

Well‐functioned photovoltaics based on nanofibers composed of PBDT‐TIPS‐DTNT‐DT and graphenic precursors thermally modified by polythiophene,polyaniline and polypyrrole

Reduced graphene oxide nanosheets modified by conductive polymers including polythiophene (GPTh), polyaniline (GPANI) and polypyrrole (GPPy) were prepared using the graphene oxide as both substrate and chemical oxidant. UV–visible and Raman analyses confirmed that the graphene oxide simultaneously produced the reduced graphene oxide and polymerized the conjugated polymers. The prepared nanostructures were subsequently electrospun in mixing with poly(3‐hexylthiophene) (P3HT)/phenyl‐C71‐butyric acid methyl ester (PC₇₁BM) and poly[bis(triisopropylsilylethynyl)benzodithiophene‐bis(decyltetradecylthien)naphthobisthiadiazole] (PBDT‐TIPS‐DTNT‐DT)/PC₇₁BM components and embedded in the active layers of photovoltaic devices to improve the charge mobility and efficiency. The GPTh/PBDT‐TIPS‐DTNT‐DT/PC₇₁BM devices demonstrated better photovoltaic features (J_sc = 11.72 mA cm^?2, FF = 61%, V_oc = 0.68 V, PCE = 4.86%, μ_h = 8.7 × 10^?3 cm² V^–1 s^?1 and μ_e = 1.3 × 10^?2 cm² V^–1 s^?1) than the GPPy/PBDT‐TIPS‐DTNT‐DT/PC₇₁BM (J_sc = 10.30 mA cm^?2, FF = 60%, V_oc = 0.66 V, PCE = 4.08%, μ_h = 1.4 × 10^?3 cm² V^–1 s^?1 and μ_e = 8.9 × 10^?3 cm² V^–1 s^?1) and GPANI/PBDT‐TIPS‐DTNT‐DT/PC₇₁BM (J_sc = 10.48 mA cm^?2, FF = 59%, V_oc = 0.65 V, PCE = 4.02%, μ_h = 8.6 × 10^?4 cm² V^–1 s^?1 and μ_e = 7.8 × 10^?3 cm² V^–1 s^?1) systems, assigned to the greater compatibility of PTh in the nano‐hybrids and the thiophenic conjugated polymers in the bulk of the nanofibers and active thin films. Furthermore, the PBDT‐TIPS‐DTNT‐DT polymer chains (3.35%–5.04%) acted better than the P3HT chains (2.01%–3.76%) because of more complicated conductive structures. © 2019 Society of Chemical Industry     

Magnetoelectric coupling effect of Ga0.8Fe1.2O3/Bi0.5(Na0.85K0.15)0.5TiO3 multiferroic composite films

Lead-free Ga_0.8Fe_1.2O₃/Bi_0.5(K_0.15Na_0.85)_0.5TiO₃ (GFO/BKNT) bilayer multiferroic composite films were fabricated on Pt(100)/Ti/SiO₂/Si substrates via sol-gel methods. The microstructure, domain structure, ferroelectric, piezoelectric, magnetic properties as well as magnetoelectric coupling effect were investigated for the composite films at room temperature. Well-defined interfaces between GFO and BKNT layers and clear electric domain structures are observed. A strong magentoelectric effect is obtained with magnetoelectric voltage coefficient of α_E=30.89 mV/cm Oe, which is attributed to excellent ferroelectric, piezoelectric, and magnetic properties, as well as the coupling interaction between ferromagnetic GFO and ferroelectric BKNT phases for lead-free bilayer composite films. Besides, GFO and BKNT demonstrate the similar perovskite structure with well lattice matching, which endows the outstanding coupling and fascinating magnetoelectric properties. The present work opens up the opportunity of lead-free magnetoelectric composite films for both further fundamental studies and practical device applications such as sensors, transducers and multistate memories.