Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

Cd_1−xZn_xS (0 ≤ x ≤ 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 ± 5 °C and after annealed at 350 °C. The structural, morphological, compositional and optical properties of the deposited Cd_1−xZn_xS thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd_1−xZn_xS thin films was hexagonal structure. For x > 0.6, however, the Cd_1−xZn_xS films were grown with cubic structure. Annealing the samples at 350 °C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd_1−xZn_xS films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.     

The photocatalytic activity of sprayed Zn1 − xMgxO thin films

ZnO has received much attention in the degradation and complete mineralization of environmental pollutants. For the purpose of increasing the photocatalytic efficiency of ZnO, Mg was doped into ZnO thin films.Zn_1 − xMg_xO thin films were prepared by spray pyrolysis method on glass substrates. The deposition temperature was 500 °C. Mg concentration was varied in the range of 0.0 to 0.3 in intervals of 0.05. The pure ZnO films were polycrystalline with preferred orientation (100). Zn_1 − xMg_xO becomes amorphous with increasing Mg concentration. The optical band gap of Zn_1 − xMg_xO changes from 3.26 to 3.59 eV with increasing Mg content. Also, the photocatalytic activity increased with Mg, and the film with x = 0.3 showed the best result.     

Investigation on the synthesis and quantum confinement effects of pure and Mn added Zn(1−x)CdxS nanocrystals

Zn_(1−x)Cd_xS and Zn_(1−x)Cd_xS:Mn²⁺ semiconductor quantum dots (2-4 nm) have been prepared by a novel solvothermal route assisted microwave heating method. The growth parameters governing the smaller size and higher yield have been optimized. The synthesized QDs exhibit a significant blue shift as compared to their corresponding bulk counterpart in the UV-vis optical absorption spectrum. The dielectric constant value varies from 2.79 to 6.17 (at 40 °C, 1 kHz) depending upon the composition of the alloy; lower value corresponds to Zn_0.75Cd_0.25S:Mn²⁺ and the higher value corresponds to Zn_0.25Cd_0.75S:Mn²⁺. The crystallite size to exciton bohr radius ratio being <1 indicates a strong quantum confinement effect in both CdS and ZnS QDs. The quantum confinement effect exists in the sequence of ZnS:Mn²⁺ < Zn_(1−x)Cd_xS:Mn²⁺ (x < 0.5) < ZnS < Zn_(1−x)Cd_xS < CdS < CdS:Mn²⁺.     

Structural, optical and magnetic properties of Eu-doped ZnO films

Polycrystalline Zn_1−xEu_xO (x = 0, 0.02, 0.05) films were deposited on silicon (1 0 0) substrates by radio-frequency magnetron sputtering. The structural, optical and magnetic properties of the films were investigated. The results from both the X-ray diffraction and photoluminescence spectra reveal that Eu³⁺ ions successfully substitute for Zn²⁺ ions in the ZnO lattice. The magnetic field and temperature dependence of magnetization curves demonstrate that the Zn_0.95Eu_0.05O films are ferromagnetic at room temperature. No impurity phase was found in Eu-doped films with X-ray diffraction, Raman spectroscopy and zero-field-cooled measurements. The ferromagnetism is attributed to the intrinsic property of Eu-doped ZnO films and could be interpreted by the bound-magnetic-polaron model.     

Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Influence of oxygen partial pressure on electrical and optical properties of Zn0.93Mn0.07O thin films

The Zn_1−xMn_xO (x = 0.07) thin films were grown on glass substrates by direct current reactive magnetron cosputtering. The influence of oxygen partial pressure on the structural, electrical and optical properties of the films has been studied. X-ray-diffraction measurement revealed that all the films were single phase and had wurtzite structure with c-axis orientation. The experimental results indicated that there was an optimum oxygen partial pressure where the film shows relative stronger texture, better nano-crystallite and lower surface roughness. As the oxygen partial pressure increases, the carrier concentration systematically decreases and photoluminescence peaks related to zinc interstitials gradually diminish. The minimal resistivity of 70.48 Ω cm with the highest Hall mobility of 1.36 cm² V⁻¹ s⁻¹ and the carrier density of 6.52 × 10¹⁶ cm⁻³ were obtained when oxygen partial pressure is 0.4. All films exhibit a transmittance higher than 80% in the visible region, while the deposited films showed a lower transmittance when oxygen partial pressure is 0.4. With the increasing of oxygen partial pressure, the peak of near-band-edge emission has firstly a blueshift and then redshift, which shows a similar trend to the band gap in the optical transmittance measurement.     

Tunable deep-level emission in ZnO nanoparticles via yttrium doping

Yttrium-doped ZnO nanoparticles (Zn_1−xY_xO, x = 0, 0.03, 0.05) were synthesized by sol-gel technique. The effects of yttrium doping concentration on the structures, morphologies and optical properties of as-synthesized Zn_1−xY_xO nanoparticles were investigated in detail. The results from structural characterizations clearly demonstrated that yttrium ions were successfully doped into the crystal lattice of ZnO matrix. Besides a UV emission centered at ∼383 nm, the PL spectra of all the samples exhibited a broad deep-level emission, which can be deconvoluted into two Gauss peaks centered at 539 nm (P1) and 598 nm (P2), respectively. As the concentration of Y doping increased from 0% to 5%, the peak position with maximum intensity in deep-level emission band was gradually tuned from 539 nm to 598 nm and the relative intensity ratio of I_P1/I_P2 also decreased step by step, which revealed a unique optical property of yttrium-doped ZnO nanoparticles.     

Structural and optical analysis of ZnBeMgO powder and thin films

We here report the structural and optical studies of Zn_1−x−yBe_xMg_yO (0 ≤ x ≤ 0.15; 0 ≤ y ≤ 0.20) powders and thin films. From the Rietveld refinement of the powder X-ray diffraction (XRD) patterns it was revealed that the value of ‘a’ lattice parameter remains almost unchanged whereas ‘c’ parameter reduces with Be and Mg co-doping in ZnO. The Zn-O bond length also decreases in co-doped samples. Raman studies of the pure ZnO powder showed all the characteristic peaks of the wurtzite hexagonal structure and with (Be, Mg) co-doping new modes appeared which can be attributed to arise as a result of substitution. The XRD of the films prepared from the powders using pulsed laser deposition (PLD) technique exhibited the preferential orientation and with increase in co-doping the (0 0 0 2) peak also shifts to higher 2θ values suggesting the incorporation of Be/Mg at the Zn-site. From the UV-visible optical transmittance measurement it was noticed that the band gap of the pristine ZnO film is 3.3 eV which enhanced up to 4.51 eV for Zn_0.7Be_0.1Mg_0.2O film which lies in the solar blind region and is very useful in the realization of deep UV detectors.     

A study of structural, optical and magnetic properties of Zn0.97−xCuxCr0.03O diluted magnetic semiconductors

A set of Zn_0.97−xCu_xCr_0.03O (0 ≤ x ≤ 0.03) samples has been synthesized by the sol-gel method. The structural, optical and magnetic properties of the samples were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM). With Cu doping concentration increasing up to 2 at%, the XRD results showed that all diffraction peaks corresponded to wurtzite structure of ZnO, but for Zn_0.94Cu_0.03Cr_0.03O, the secondary phase of Cu emerged. PL measurements showed that Zn_0.97−xCu_xCr_0.03O powders and pure ZnO with the Cu concentration varied from 0.00 to 0.02 exhibited obvious blue shift; the green emission peak could be effectively enhanced with the increase of the Cu concentration. Magnetic measurements indicated that room-temperature ferromagnetism of Zn_0.97−xCu_xCr_0.03O was an intrinsic property when Cu concentration was less than 0.02. The saturation magnetization of Zn_0.97−xCu_xCr_0.03O (x = 0, 0.01, 0.02) increased with the increase of the Cu concentration.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Dependence of magnetic properties on the film thickness and Pt atomic fraction of post-annealed Fe1−xPtx-C granular films on MgO(1 0 0) and SiO2/Si(1 0 0) substrates

The Fe_1−xPt_x-C granular films with different Pt atomic fractions (0.09 ≤ x ≤ 0.52) and film thicknesses (5 nm ≤ t ≤ 100 nm) were deposited on MgO(1 0 0) and SiO₂/Si(1 0 0) substrates by facing-target sputtering and post-annealing. With the increasing x, the ordered L1₀ FePt grains form. All of the films are ferromagnetic, and the easy axis is in the film plane. With the decrease of t, the films turn from hard ferromagnetic to soft ferromagnetic. The maximum coercivity of the 100-nm thick Fe_1−xPt_x-C granular films measured at a 10-kOe field is 3.7 kOe at x = 0.48. The coercivity of the Fe_0.56Pt_0.44-C granular films increases, and the magnetization measured at a 10-kOe field decreases with the increasing t. The reversal mechanism of the 100-nm thick Fe_1−xPt_x-C granular films turns from the domain wall motion to the Stoner-Wohlfarth rotation mode as x increases. However, the reversal mechanism of the Fe₅₆Pt₄₄-C granular films with different t approaches the Stoner-Wohlfarth rotation mode, and is film-thickness independent.     

Sintering behaviors, magnetic and electric properties of Bi-Zn co-doped Co2Y ferrites

The Bi and Zn substitution effects on the sintering behaviors, magnetic and electric properties of hexagonal ferrites with a composition of 2(Ba_1−xBi_xO)·2(Zn_yCo_0.8−yCu_0.2O)·6(Fe_2−x/3Zn_x/3O₃) were investigated. The results showed that the addition of Bi and Zn can significantly promote Co₂Y densification. The Y phase may be triggered to decompose into M and spinel phases at high sintering temperatures (above 1050 °C) for samples with excess Bi (x = 0.2) substitution, which resulted in densification and magnetic properties degradation. Co₂Y ferrites with x = 0.1 and y = 0.4 sintered at 1050 °C show a relative density of 94%, a high initial permeability of 4.5, a quality factor (Q) of 50.     

High-Q microwave dielectrics in the (Mg1−xZnx)Al2O4 (x = 0-0.1) system

The microwave dielectric properties and the microstructures of (Mg_1−xZn_x)Al₂O₄ (x = 0-0.1) ceramic system prepared by the conventional solid-state route were investigated. The forming of spinel-structured (Mg_1−xZn_x)Al₂O₄ (x = 0-0.1) solid solutions was confirmed by the XRD patterns and the measured lattice parameters, which linearly varied from a = b = c = 8.0815 Å for MgAl₂O₄ to a = b = c= 8.0828 Å for (Mg_0.9Zn_0.1)Al₂O₄. By increasing x, the Q × f of (Mg_1−xZn_x)Al₂O₄ can be tremendously boosted from 82,000 GHz at x = 0 to a maximum of 156,000 GHz at x = 0.05. The Zn substitution was effective in reducing the dielectric loss without detrimental effects on the ?_r and τ_f values of the ceramics.     

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

In this study, N-doped ZnO thin films were fabricated by oxidation of Zn_xN_y films. The Zn_xN_y thin films were deposited on glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD) using metallic zinc wire (99.999%) as a cathode target in pure nitrogen plasma. The influence of oxidation temperature, on the electrical, structural and optical properties of N-doped ZnO films was investigated. P-type conduction was achieved for the N-doped ZnO obtained at 450 °C by oxidation of Zn_xN_y, with a resistivity of 16.1 Ω cm, hole concentration of 2.03 × 10¹⁶ cm⁻³ and Hall mobility of 19 cm²/V s. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N into the ZnO films. X-ray diffraction (XRD) pattern showed that the films as-deposited and oxidized at 350 °C were amorphous. However, the oxidized films in air atmosphere at 450-550 °C were polycrystalline without preferential orientation. In room temperature photoluminescence (PL) spectra, an ultraviolet (UV) peak was seen for all the samples. In addition, a broad deep level emission was observed.     

Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1−xSe/Znx′Cdy′Mg1−x′−y′Se asymmetric coupled quantum well structure

Temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) were used to characterize a Zn_xCd_1−xSe/Zn_x′Cd_y′Mg_{1−x′−y′}Se asymmetric coupled quantum well (ACQW) structure in the range of 10-300 K. The PL peak position yielded information of the fundamental excitonic recombinations. A detailed analysis of the CER spectra led to the identification of various interband transitions. The intersubband transitions were then estimated and found to be in a good agreement with the previous report of Fourier-transform infrared absorption measurements. At low temperature, the PL spectra of the sample showed an asymmetric behavior with an exponential tail at the lower-energy side and were attributed to the localized excitonic recombinations due to potential fluctuations. Detailed study of the temperature dependence of the excitonic transition energies indicated that the main influence of temperature on the quantized transitions is through the temperature dependence of the band gap of the constituent material in the well.     

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Ag-doped Ca₃Co₄O₉ thin films with nominal composition of Ca_3−xAg_xCo₄O₉ (x = 0∼0.4) have been prepared on sapphire (0 0 0 1) substrates by pulsed laser deposition (PLD). Structural characterizations and surface chemical states analysis have shown that Ag substitution for Ca in the thin films can be achieved with doping amount of x ≤ 0.15; while x > 0.15, excessive Ag was found as isolated and metallic species, resulting in composite structure. Based on the perfect c-axis orientation of the thin films, Ag-doping has been found to facilitate a remarkable decrease in the in-plane electrical resistivity. However, if doped beyond the substitution limit, excessive Ag was observed to severely reduce the Seebeck coefficient. Through carrier concentration adjustment by Ag-substitution, power factor of the Ag-Ca₃Co₄O₉ thin films could reach 0.73 mW m⁻¹ K⁻² at around 700 K, which was about 16% higher than that of the pure Ca₃Co₄O₉ thin film.     

Structural, optical and transport properties of Al doped BiFeO3 nanopowder synthesized by solution combustion method

Aluminum doped Bismuth ferrite (BFO) nanopowders (grain size 13-20 nm) having composition Bi_1−xAl_2xFe_1−xO₃ (x = 0.00, 0.025, 0.05, 0.10, 0.15, 0.20, 0.25 and 0.30) were successfully synthesized by solution combustion method using citric acid as fuel at a temperature as low as 200 °C. As-prepared samples were examined by powder XRD for phase identification and crystallite size determination. The d.c. resistivity as a function of temperature was measured by standard two probe setup which exhibits clear metal to insulator transition for all samples. FTIR analysis was carried out to identify the chemical bonds present in the system. The optical band gap was calculated from the UV-vis absorbance spectra using classical Tauc relation which was found to vary from 2.78 eV to 2.93 eV for different Al³⁺ concentrations. The activation energies calculated from the slopes of ln(ρ) versus 10³/T plots are in the range 0.54-0.73 eV.     

Structural, optical and electrical properties of In-doped Cd2SnO4 thin films by spray pyrolysis method

Preparation of highly conducting and transparent In-doped Cd₂SnO₄ thin film by spray pyrolysis method at a substrate temperature of 525 °C is reported. In-doping concentration is varied between 1 and 5 wt.%. The effect of In-doping on structural, optical and electrical properties was investigated using different techniques such as X-ray diffraction, atomic force microscopy, optical transmittance and Hall measurement. X-ray diffraction studies revealed that the films are polycrystalline with cubic crystal structure. The undoped and In-doped Cd₂SnO₄ films exhibit excellent optical transparency. The average optical transmittance is ∼87% in the visible range for 3 wt.% In-doping. Further In-doping widens the optical band gap from 2.98 ± 0.1 eV to 3.04 ± 0.1 eV. A minimum resistivity of 1.76 ± 0.2 × 10⁻³ Ω cm and maximum carrier concentration of 9.812 ± 0.4 × 10¹⁹ cm⁻³ have been achieved for 1 wt.% In-doping in Cd₂SnO₄ thin films.     

Microwave dielectric properties of temperature stable Li2ZnxCo1−xTi3O8 ceramics

The Li₂Zn_xCo_1−xTi₃O₈ (x = 0.2-0.8) solid solution system has been synthesized by the conventional solid-state ceramic route and the effect of Zn substitution for Co on microwave dielectric properties of Li₂CoTi₃O₈ ceramics has also been investigated. The microwave dielectric properties of these ceramics show a linear variation between the end members for all compositions. The optimized sintering temperatures of Li₂Zn_xCo_1−xTi₃O₈ ceramics increase with increasing content of Zn. The specimen with x = 0.4 sintered at 1050 °C/2 h exhibits an excellent combination of microwave dielectric properties with ?_r = 27.7, Q_u × f = 57,100 GHz and τ_f = −1.0 ppm/°C.     

Transparent conducting oxide films of heavily Nb-doped titania by reactive co-sputtering

Niobium-doped titania (TNO) films of various Nb content were deposited on glass and silicon substrates by reactive co-sputtering of Ti and Nb metal targets. Nb content in the TNO films was varied from 0 to ∼13 at.% (atomic percent), corresponding to Ti_1−xNb_xO₂ with x = 0-0.52, by modulating the Nb target power from 0 to 150 W (Watts). The influence of ion bombardment on the TNO films was investigated by applying an RF substrate bias from 0 to 25 W. The as-deposited TNO films were all amorphous and insulating, but after annealing at 600 °C for 1 h in hydrogen, they became crystalline and conductive. The annealed films crystallized into either pure anatase or mixed anatase and rutile structures. The as-deposited and the annealed films were transparent, with an average transmittance above 70%. Anatase TNO film (Ti_1−0.39Nb_0.39O₂) with Nb 9.7 at.% exhibited a dramatically reduced resistivity of 9.2 × 10⁻⁴ Ω cm, a carrier density of 6.6 × 10²¹ cm⁻³ and a carrier mobility around 1.0 cm² V⁻¹ s⁻¹. In contrast, the mixed-phase Ti_1−0.39Nb_0.39O₂ showed a higher resistivity of 1.2 × 10⁻¹ Ω cm. This work demonstrates that the anatase phase, oxygen vacancies, and Nb dopants are all important factors in achieving high conductivities in TNO films.