定向碳纳米管的化学气相沉积制备法

报道了一种简便有效的合成定向碳纳米管 (CNTs)的化学气相沉积 (CVD)制备方法。以铁为催化剂 ,乙炔为碳源 ,采用单一反应炉 ,直接在石英基底上沉积催化剂颗粒薄膜 ,成功合成了定向性好、管径均匀的高质量大密度的碳纳米管     

Growth of long aligned carbon nanotubes on amorphous hydrogenated silicon nitride by thermal chemical vapor deposition

Vertically aligned long carbon nanotubes in the range of 80-100 µm have been synthesized on amorphous hydrogenated silicon nitride (a-SiN_x:H) coated silicon substrate by thermal chemical vapor deposition of ferrocene and xylene. It is observed that high temperature annealing in oxygen ambient results in formation of crystalline silicon dioxide in the matrix of amorphous silicon nitride due to out diffusion of hydrogen. It is suggested that active sites created on silicon dioxide and a-SiN_x:H clusters provide mechanical support for the alignment of long carbon nanotubes. It is proposed that a thin layer of a-SiN_x:H prevents silicide formation between the catalyst (Fe) and silicon thus lengthening the catalyst life.     

Effect of ion bombardment on the synthesis of vertically aligned single-walled carbon nanotubes by plasma-enhanced chemical vapor deposition

The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600?°C, using ethylene as the carbon source and 1?nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input power and gas pressure. The resistibility of synthesized VA-SWNTs against ion bombardment etching was found to be closely related to the growth temperature. At relatively low temperature (500?°C), the VA-SWNTs were very susceptible to ion bombardments, which could induce structural defects, and even resulted in a structural transition to few-walled nanotubes. For capacitively coupled radio frequency (rf) PECVD operating at moderate gas pressure (0.3-10?Torr), the ion bombardment etching effect is mainly dependent on the ion flux, which is related to the plasma input power and gas pressure.     

An efficient fabrication of vertically aligned carbon nanotubes on flexible aluminum foils by catalyst-supported chemical vapor deposition

An efficient and versatile growth of thin-layer carbon nanotubes on a flexible aluminum foil (for kitchen use) by catalyst-supported chemical vapor deposition is reported. The aluminum foil used in the present experiment is commercially available for kitchen use. The electron-beam vapor deposition and dip-coating have been used for preparing catalysts on the aluminum foil. Vertically aligned thin-layer CNTs with typical diameters of 2.5-6.0?nm and lengths up to 90?μm are obtained when ethanol is used in combination with Fe and Co catalyst particles at a growth temperature of around 650?°C under an Ar/H(2) gas flow. Thermo-gravimetric analyses together with HR-TEM observations indicate that the purity of the CNTs synthesized by the current technique is very high.     

Hot-wire chemical vapor deposition of carbon nanotubes

Hot-wire chemical vapor deposition (HWCVD) has been employed for the continuous gas-phase generation of both carbon multi-wall and single-wall nanotube (MWNT and SWNT) materials. Graphitic MWNTs were produced at a very high density at a synthesis temperature of 600 °C. SWNTs were deposited at a much lower density on a glass substrate held at 450 °C. SWNTs are typically observed in large bundles that are stabilized by tube–tube van der Waals’ interactions. However, transmission electron microscopy analyses revealed only the presence of isolated SWNTs in these HWCVD-generated materials.     

改进化学气相沉积法在炭纤维表面生长碳纳米管(英文)

采用一种改进的化学气相沉积法在炭纤维表面制备碳纳米管。为了提高炭纤维表面的润湿性能,炭纤维在浸渍之前先在CVD设备中在真空下973 K的高温处理,然后在硝酸和浓硫酸体积比为3∶1的混合酸中酸处理30 min。而改进的化学气相沉积法关键在于让催化剂的还原步骤和碳纳米管的生长步骤同时进行。这样通过减小过渡金属元素与炭纤维之间的接触时间从而降低了它们之间的相互扩散,在确保了炭纤维本身的力学性能下降程度明显小于用普通化学气相法制备的情况下生长出长且茂密的碳纳米管阵列。另外,经过对工艺参数的优化发现当用乙醇作溶剂,Fe(NO3)3.9H2O溶度为100 mmol/L,氢气和碳源气体比值为4/1,而生长时间为30 min时得到最好的碳纳米管阵列。     

Controlled density of vertically aligned carbon nanotubes in a triode plasma chemical vapor deposition system

We report on the growth mechanism and density control of vertically aligned carbon nanotubes using a triode plasma enhanced chemical vapor deposition system. The deposition reactor was designed in order to allow the intermediate mesh electrode to be biased independently from the ground and power electrodes. The CNTs grown with a mesh bias of + 300 V show a density of ∼ 1.5 μm^− 2 and a height of ∼ 5 μm. However, CNTs do not grow when the mesh electrode is biased to − 300 V. The growth of CNTs can be controlled by the mesh electrode bias which in turn controls the plasma density and ion flux on the sample.     

Efficient growth of horizontally aligned single-walled carbon nanotubes by chemical vapor deposition over MgO-supported bimetallic co-based catalysts

A series of supported cobalt-based catalysts (Co-X, where X = Mn, V, W, Gd, Mo) has been investigated for the growth of single-walled carbon nanotubes via catalytic decomposition of CH4. At 850 degrees C, Mn, W and Gd promoted Co-catalysts produce SWNTs while Mo and V do not yield any SWNTs. Furthermore, Co-Gd catalysts produce high quality SWNTs with very few defects, and also narrow diameter and chirality distributions (approximately 1 nm). The growth of horizontally aligned SWNTs (approximately 1 mm long) using the Co-Gd catalyst is also demonstrated.     

Structure of multiwalled carbon nanotubes grown by chemical vapor deposition

Carbon nanotubes have been grown by chemical vapor deposition at 650°C in an argon atmosphere using a butane-propane mixture and a nickel catalyst and have been characterized by scanning and transmission electron microscopy and Raman spectroscopy. The results indicate that the multiwalled nanotubes have an imperfect graphite-like structure with a conical supramolecular configuration. A phenomenological technique is proposed for statistical analysis of the state of carbon nanotubes in measurements of the intensity of the defect zone D in their Raman spectra.     

化学气相沉积法制备多壁碳纳米管

以带程序升温装置的管式电阻炉为实验装置,采用化学气相沉积法,在一定的工艺条件下裂解二茂铁与双鸭山精煤的混合物制备出多壁碳纳米管.采用透射电镜、Raman光谱以及X射线衍射技术对碳纳米管产物进行表征,同时研究了碳纳米管的生长机理.     

Effects of methane partial pressure on synthesis of single-walled carbon nanotubes by chemical vapor deposition

A series of experiments have been done to investigate the role of methane partial pressure in the synthesis of carbon nanotubes by catalyst chemical vapor deposition. It is supposed that there is a critical methane partial pressure (0.4 atm) for single-walled carbon nanotube (SWNT) synthesis at 850°C. When the methane partial pressure is higher than the critical value, the whole rate is decided by the carbon diffusion rate on the catalyst surface or in the bulk, contrariwise, the synthesis rate is proportional to the methane partial pressure.     

热化学气相沉积法在硅纳米丝上合成碳纳米管

利用热化学气相沉积法在负载不同厚度催化剂的硅纳米丝(SiNW)表面生长碳纳米管(CNTs),探讨了生长条件对所合成SiNW-CNT的结构和场发射特性的影响.这种类似树状的三维结构具有较高碳纳米管表面密度及降低的电场筛除效应等潜在优势.使用拉曼光谱( Raman)、电子显微镜(SEM)、透射电子显微镜(TEM)、能量扩散分光仪(EDS)分析了碳纳米管的结构性质,并在高真空下施加电场测得碳纳米管的场发射特性.结果表明:随硅纳米丝上负载催化剂镍膜厚度的变化,所合成碳纳米管的表面特性、结晶结构及功函数改变,导致电子发射难易程度的改变,进一步影响碳纳米管的场发射特性.     

Growth control of carbon nanotubes by plasma enhanced chemical vapor deposition

Plasma enhanced chemical vapor deposition (PECVD), which enables growth of vertically aligned carbon nanotubes (CNTs) directly onto a solid substrate, is considered to be a suitable method for preparing CNTs for nanoelectronics applications such as electron sources for field emission displays (FEDs). For these purposes, establishment of an efficient CNT growth process has been required. We have examined growth characteristics of CNTs using a radio frequency PECVD (RF-PECVD) method with the intention to develop a high efficiency process for CNT growth at a low enough temperature suitable for nanoelectronics applications. Here we report an effect of pretreatment of the catalyst thin film that plays an important role in CNT growth using RF-PECVD. Results of this study show that uniform formation of fine catalyst nanoparticles on the substrate is important for the efficient CNT growth.     

Growth of well-aligned carbon nanotubes by RF-DC plasma chemical vapor deposition

Highly aligned carbon nanotubes (CNTs) were grown under high sheath electric field and gas pressure conditions by the radio frequency (RF) plasma-enhanced direct current (DC) plasma chemical vapor deposition (CVD) method due to a stabilized DC discharge. The uniform growth of highly aligned multi-walled CNTs was achieved over the entire surface area of a 50 × 50 mm² iron foil. The growth of multi-walled CNTs on a 75 × 75 mm² iron foil was also confirmed.     

Synthesis of multi-walled carbon nanotubes by microwave plasma-enhanced chemical vapor deposition

Microwave plasma-enhanced chemical vapor deposition (MW-PECVD) has been employed to synthesize carbon nanostructures by using Fe (or Co, Ni)/γ-Al₂O₃ as catalysts and a mixture of benzene, hydrogen, and argon as precursors. By regulating the types of catalyst, the microwave incident power, the ratio and flux of the precursors, many morphologies such as ordinary geometric, helix-shaped, and planar spiral carbon nanotubes with aspect ratios of 100–1000 have been observed. Furthermore, two novel nanostructures, which are probably the missing link between onion-like carbon particles and nanotubes, have also been obtained. The striking feature of this new approach is the low synthesis temperature (<520°C) due to the non-equilibrium characteristic of microwave plasma operated at low pressure, which is crucial for some fascinating applications.     

Quantitative elucidation of the rapid growth and growth saturation of millimeter-scale vertically aligned carbon nanotubes by hot-filament chemical vapor deposition

We report the rapid synthesis of millimeter-long vertically-aligned carbon-nanotubes (VACNTs) by hot-filament chemical-vapor-deposition without the use of water vapor. The growth rate increased initially up to ~ 190 μm/min but decreased thereafter resulting in the growth of up to 2.2 ± 0.2 mm in 23 ± 2 min. A thermodynamic model driven by a carbon-concentration gradient can account for very rapid initial growth with Arrhenius-type exponential temperature dependence. Another model devised for the quantitative elucidation of the monotonic decrease in growth-rate and quasi saturation of VACNT growth confirmed that the growth kinetics of VACNTs are controlled by the concomitant contribution of a diffusion-limited precursor supply and reaction-driven catalyst deactivation.     

化学气相沉积法快速生长定向纳米碳管

利用化学气相沉积法，采用二甲苯为碳源，二茂铁为催化剂，氮气作保护气，在石英基底上催化裂解生长定向纳米碳管，试验结果表明：在775℃，120min的条件下，可生长出长达200μm厚的定向纳米碳管薄膜；在775℃，反应时间为60min～120min时，纳米碳管的长度为100μm～200μm，而纳米碳管的直径变化不明显。而无氢气，较高的反应温度和连续的催化剂供给对快速生长定向纳米碳管有重要的影响。     

In situ synthesis of ceria decorated carbon nanotubes by chemical vapor deposition

Ceria decorated carbon nanotubes (CNTs) were in-situ synthesized by chemical vapor deposition using a Ni/Ce/Cu catalyst. Ceria nanoparticles, with a diameter of about 3-8 nm, were highly dispersed on the CNTs, and it is believed that they are formed at the same time as the CNTs.     

Structure determinations of double-wall carbon nanotubes grown by catalytic chemical vapor deposition

We report an application of nanoarea electron diffraction for structure determination of double-wall carbon nanotubes (DWNT) grown by catalytic chemical vapor deposition. The structures of 30 tubes were determined from experimental diffraction patterns. Among these tubes, the inner and outer wall structure of 18 tubes was precisely determined by comparison with kinematic electron diffraction simulations. For the structure of the DWNTs, our experiment revealed a mixture of semiconducting-metallic (S-M), S-S and M-M tubes. The spacing between the two walls ranges from 0.335 nm to 0.384 nm. Most DWNTs are incommensurate and chiral.     

Cubic and tetragonal maghemite formation inside carbon nanotubes under chemical vapor deposition process conditions

Abstract

Carbon nanotubes filled with iron oxides can be a promising material for medicine. In this paper, carbon nanotubes containing iron oxides were synthesized by chemical vapor deposition method. Cubic and tetragonal modifications of maghemite Fe₂O₃ were found inside the nanotubes along with α- and γ-phases of iron and iron carbides by electron microscopy studies. Twins were identified in the tetragonal maghemite with the {103} twinning plane.