一种新颖的低温硅片直接键合技术

提出一种使用CF4等离子体激活处理硅片表面来降低退火温度的低温硅片直接键合新方法.硅片用CF4等离子体激活处理,经过亲水处理预键合后,再在N2保护下进行40h 300℃的热处理,硅片的键合强度达到了体硅本身的强度.     

表面活化室温键合技术研究进展

随着半导体技术领域对低温晶圆键合技术的需求不断增长,表面活化键合（Surface activated bonding, SAB）技术开始被广泛研究。与其他键合方式相比,即使在室温下,表面活化键合也能完成牢固的键合,对于常规半导体、金属材料等非常有效。但对于SiO₂、有机物等材料,标准的表面活化键合并不十分适用,限制了其在特定领域的应用。近年来,研究者们提出两种改进型表面活化室温键合技术,通过在表面活化时或活化后向材料表面沉积一层纳米中间层,将晶圆的直接键合转化为纳米中间层间的键合。在键合机理方面,重点分析了材料的表面活化机制、界面原子成键机制以及环境因素对键合强度的影响等。通过对前期研究的分析总结进一步对比了三种表面活化键合技术的优缺点,期望可以推动表面活化键合技术在半导体技术领域的进一步广泛应用。     

基于工业4.0的轴承合套机械系统设计

针对现有轴承合套机智能化、自动化程度不高,无法满足现代化智能制造的需求和轴承市场种类需求增加,总量需求减少变化趋势,结合模块化设计与虚拟仿真,设计基于工业4.0的轴承合套机械系统。系统包括内外圈进料传输模块、内外圈夹取传递模块、内圈滚道偏差值测量模块、外圈滚道偏差值测量模块、多层式内/外圈放置模块、内外圈合套模块、安装模块。其中安装模块主要分为下压部分、推压部分和拨动部分。模块装配完毕后,虚拟仿真显示,各模块协调配合可完成两种型号轴承内外圈合套,互相不产生干涉。因此,系统实现轴承全自动合套,同时小范围(6202和6203)内实现型号订制,改变型号需求时,全自动在线切换生产。     

微流控芯片的键合技术与方法

键合是将组成微流控芯片的基片和盖片以某种方式结合在一起,从而形成封闭的微通道的一种装配方法。键合质量直接影响到微通道中流体的运动形态,从而影响检测效果,因此键合是微流控芯片制作过程中非常重要的环节。综述了现有的微流控芯片键合技术和方法,分析了各种键合技术和方法在键合质量、键合效率以及操作简便性等方面的特点,为不同材质、不同应用领域的微流控芯片选择适用的键合方法提供了技术指南,对键合技术的未来发展进行了分析和预测。     

关于装配钳工中三角R合套加工测量的相关探讨

围绕装配钳工中三角R合套加工测量内容,在介绍其必要性的基础上,分析三角R合套加工测量精度控制注意事项,重点探究装配钳工中三角R合套加工测量具体要求,为专业工作人员在测量时提供理论支撑,从而大大提高三角R合套加工测量准确性。     

GTY轴承合套仪的性能与使用

GTY轴承合套仪是用于测量轴承内、外套圈沟道直径和选配钢球尺寸的精密仪器。它是通过机械位移值,经传感器发出的讯号,由DCB—5A型电感测微仪指针,报出需要装配的钢球尺寸数值,可靠的保证轴承合套的游隙处于中间值良好精度要求。然后经滑槽送入蹦球机工位进入装球工序,再经传送装置送入下道工序,完成轴承合套装配全部工序,是提高轴承合套质量和生产效率的先进装配工装。     

某船尾轴液压无键套合联轴器的过盈安装研究

针对某船调距桨更换桨叶后承载功率增加而产生的液压无键套合联轴器的使用安全性问题,对传递扭矩和推力的联轴器箍套、锥套与尾轴的过盈安装进行了研究.首先分析了液压无键套合联轴器的组成及工作原理,接着研究了联轴器过盈安装的厚壁圆筒理论,根据厚壁圆筒某直径处的应力、变形量的表达公式,计算了传递2.8倍额定扭矩时联轴器套合锥面的过...     

热超声倒装键合振动传递与键合强度形成研究

采用多普勒激光振动测量系统，获得了热超声倒装键合过程中工具末端及芯片的振动速度曲线。通过比较分析两条曲线，揭示了热超声倒装键合强度的生成过程：在键合初始阶段，键合界面的相对运动主要发生在芯片金凸点与基板焊盘表面之间，并使其接触表面氧化层和污染层被破坏，裸露出新鲜原子，为金凸点与焊盘间的原子扩散并最终形成键合强度提供条件；随着键合的进行，芯片振动速度开始下降，而工具末端振动速度继续增大（即出现速度分离现象），工具末端和芯片间产生明显相对运动，表明键合强度已产生，芯片金凸点／基板焊盘间的结合力超过工具末端／芯片间的摩擦力；速度分离后芯片与工具末端的振动速度和位移曲线表明了超声振动能量部分耗散在芯片／工具的摩擦上。     

紫外光活化低温键合研究进展

随着电子及生物医疗元器件朝着微型化、便携式及多功能性的发展,连接(电子领域内常被称为“键合”)已成为材料或结构一体化集成不可或缺的关键环节。表面活化键合避免了传统焊接工艺中的高温,能够在较低温度条件下使热膨胀差异较大的材料或结构实现可靠连接,在微电子、微机电系统、光电子及微流控芯片等制造领域极具应用潜力,其中紫外光作为一种简易高效的表面活化手段近年来备受关注。本文对紫外光活化低温键合相关的研究进展进行综述,主要介绍了紫外光的基本性质,对有机及无机材料基板表面的作用效果,总结了面向微电子、微机电系统和光电子器件制造的紫外光表面活化晶圆键合成果,以及其在微流控器件封接、医用可植入器件制备中的应用实例,最后对该键合方法的未来发展和挑战进行了展望。     

用于晶圆键合的对准标记定位算法

对准标记精确定位是晶圆键合精度实现的关键,为了提高对准标记定位算法的精度、实时性及适应性,提出了一种基于边缘检测拟合定位的高精度对准标记定位算法.该方法结合分级金字塔模型对对准标记进行逐级定位,获得像素级的目标区域粗定位结果,根据目标区域粗定位结果,结合Canny检测器与改进的高斯拟合法,对对准标记的亚像素轮廓进行拟合...     

键合技术在微机械Golay-cell红外探测器中的应用

介绍多种硅片键合技术及其在基于高菜盒（Golay-cell）原理的微机械红外探测器中的应用。对多种键合方法在该器件中的实验结果进行比较，确定了现阶段最优的键合方法，即采用局部电场屏蔽方法的阳极键合方法，键合成功率在90％以上，并初步实现了器件的标准化制作。     

Patterned wafer bonding using ultraviolet adhesive

The process of patterned wafer bonding using ultraviolet (UV) adhesive as the intermediate layer was studied. By presetting the UV adhesive guide-layer, controlling the thickness of the intermediate layer (1– 1.5 μm), appropriate pre-drying temperature (60°C), and predrying time (6 min), we obtained the intermediate layer bonding of patterned quartz/quartz. Experimental results indicate that patterned wafer bonding using UV adhesive is achieved under room temperature. The process also has advantages of easy operation, low cost, and no plugging or leakage in the patterned area after bonding. Using the process, a microfluidic chip for red blood cell counting was designed and fabricated. Patterned wafer bonding using UV adhesive will have great potential in the fabrication of microfluidic chips.     

利用图像处理技术评价硅片表面清洗率

介绍了一种基于Matlab图像处理工具箱技术的评价硅片表面污染颗粒激光清洗率的新方法。借助Matlab图像处理工具箱,对清洗前后硅片表面光学显微镜照片进行处理,编写硅片表面激光干法清洗率的评价程序,统计清洗前后硅片表面评价区域的污染颗粒个数,对清洗效果进行定量评价。研究结果证明,利用此方法统计的颗粒数准确度达97.6%,得到的激光清洗率准确度达99.2%。结果表明,借助图像处理技术评定清洗效果是一种高效、快速、准确的新方法。     

Dynamic position measurement technique for flash-on-the-fly wafer exposure

A wafer alignment technique is described for flash-on-the-fly operation of pulsed excimer laser exposure sources. The positioning requirements of the measurement system are defined and possible alignment patterns are discussed. A chevron grating is proposed as the basic measuring element and a ‘zeroth’ layer reference was used to improve image contrast. An array of etched pits bounded by the (111) crystal planes of the silicon wafer formed the reference pattern. Experimental results confirm that chevron gratings are a viable means of deriving alignment signals from wafers and the etched pit reference pattern gave good contrast throughout the process steps.     

Trench depth measurement method for wafer patterning

Various types of three-dimensional vertical capacitor cells have been proposed for realizing very-large-scale integration direct random access memories (VLSI DRAMs). With vertical processing of the VLSI DRAMs, the need for a noncontacting method of measuring trench depth has greatly increased. This paper describes trench depth measurement systems with an optical interference technique. Experimental results are described in addition to the measurement principle and configurations of the system. With these systems, the trench depth can be quickly and precisely measured without cleaving the wafers. Therefore, they are applicable to in-fine monitoring systems in the VLSI DRAMs fabrication process.     

单晶硅片在脉冲激光作用下的断裂行为

基于脆性材料在激光辐照下的断裂行为,将可控断裂激光切割技术应用于脆性材料的加工.为了分析脉冲激光辐照脆性材料过程及脉冲激光扫描过程中产生的断裂行为机理,采用数值计算方法建立了含有裂纹的三维有限元热弹计算模型.分析了脉冲激光辐照单晶硅片过程中温度场和热应力场的变化情况,并模拟计算了硅片边缘含有裂纹时裂纹尖端应力强度因子的...     

Ultraviolet exposure enhanced silicon direct bonding

Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding.     

Effects of support method and mechanical property of 300 mm silicon wafer on sori measurement

This paper describes the effects of support methods and mechanical properties of 300 mm silicon wafer on sori measurement. A new supporting method, named three-point-support method, used in the sori measurement of a large diameter silicon wafer was proposed in this study to obtain a more stable measuring process. The wafer was supported horizontally by three steel balls on the vertexes of a regular triangle at the wafer edge. The measuring repeatability and anti-disturbance ability were compared between the proposed method and the conventional one-point-support method, in which the wafer is supported with a small-area chuck at the wafer center. The effects of friction between the supports and wafer surface for the three-point-support were also estimated. Finally, the influences of different mechanical characteristics at the front and back surfaces and the crystal orientation on sori measurement were investigated.     

A future technology for silicon wafer processing for ULSI

Two types of current surface grinder methods used in the preparation of silicon wafers are compared (creep-fed and in-fed). The creep-fed method left deeper residual damage in the waters as compared to the in-fed method. Second- and third-generation grinder developments, also discussed, indicate the possible directions for future production processes. For the second generation, electrolytic dressing was used to achieve stable grinding with the very rigid metal-bond with fine diamond. The maximum damage depth obtained was about 1 μm. In the third generation, plastic-regime grinding was used. A method of stripping silicon layers analogous to wood shaving is proposed. With this technology, it is expected that the damage depth would be about 0.2–0.3 μm and the accuracy of surface flatness to be ± 0.01 μm. It is expected that even with this accuracy, high productivity grinders for larger diameter wafers ( 200 mm) will be available in the near future.