带自适应斜坡补偿的COT控制Buck变换器

提出了一种采用自适应斜坡补偿(ARC)的恒定导通时间控制Buck变换器。引入了两个斜坡电压,实现对电感电流下降斜率的检测;通过负反馈环路调节斜坡斜率,使斜坡斜率跟随电感电流下降斜率的变化。最终斜坡补偿带来的额外极点被固定下来,以便于补偿设计。在此基础上,引入瞬态增强电路,提高了负载阶跃响应速度。在5 V输出电压下,负载从3 A到100 mA阶跃时,输出上冲电压减小了150 mV,恢复时间缩短了10 μs。负载从100 mA到3 A阶跃时,输出下冲电压减小了130 mV,恢复时间缩短了12 μs。     

快速瞬态响应的变导通时间模式Buck变换器

提出了一种具有快速瞬态响应的变导通时间(VOT)模式Buck变换器。VOT模式电路采用误差电压来调节导通时间,导通时间控制电路采用电流乘法器,以实现误差电压到导通时间的线性控制。突破了传统恒定导通时间(COT)模式电路中对等效占空比的限制,实现了瞬态响应的提升。仿真结果表明,与传统COT模式电路相比,VOT模式Buck变换器具有更好的瞬态响应特性。该Buck变换器的动态电压调节时间从17.8 μs减小到13.2 μs,过冲电压从200 mV减小到110 mV,负载阶跃恢复时间从13.4 μs减小到4.8 μs,下冲电压从172 mV减小到132 mV。     

一种基于COT控制的快速瞬态响应Buck变换器

设计了一种基于TSMC 0.18 μm CMOS工艺的快速瞬态响应Buck型变换器。基于电流模COT架构的Buck型变换器,结合电容电流采样电路和负载电流调节器,设计了一种新颖的瞬态增强电路,对负载电流进行补偿,有效地减小了恢复时间,提高了输出电压精度。仿真结果表明,没有瞬态增强电路时,负载电流从0 A跳变到3 A,电流变化率为3 A/10 ns,下跌电压为166.9 mV,恢复时间为5.8 μs；加入瞬态增强电路后,下跌电压变为21 mV,恢复时间变为0.5 μs。没有瞬态增强电路时,负载电流从3 A跳变到0 A,电流变化率为3 A/10 ns,过冲电压为73 mV,恢复时间为3.3 μs；加入瞬态增强电路后,过冲电压变为36 mV,恢复时间变为0.6 μs。     

用于峰值电流模Boost变换器的瞬态响应优化电路

为了提高瞬态响应速度,提出了一种用于峰值电流模PWM控制Boost变换器的瞬态响应优化电路。传统峰值电流模Boost变换器的带宽因受限于右半平面零点而限制了负载阶跃时的瞬态响应速度。该优化电路根据输出电压信号来输出自适应瞬态增强电流信号,优化了变换器的瞬态响应特性。采用0.18 μm BCD工艺对电路进行仿真验证。结果表明,负载电流从1 A变化到200 mA时,负载阶跃恢复时间从65 μs减小到50 μs;负载电流从200 mA变化到1 A时,负载阶跃恢复时间从46 μs减小到33 μs。     

一种数字COT控制Buck变换器设计

设计了一种基于数字COT控制的DC-DC变换器。通过分时复用的方法,采用单个ADC实现输入/输出电压和误差电压的量化,并通过内部数字信号计算得到电感电流信息。为克服ADC量程和精度之间的矛盾,使用PGA和DAC实现对6 bit ADC量程的扩展。Buck变换器在输入电压3.3 V、输出电压1.8 V、开关频率1 MHz下进行了仿真验证,输入电压阶跃响应时间从276μs/324μs下降到几乎无影响,负载阶跃响应时间达到39μs/39μs,电源调整率为0.14%,负载调整率为0.14%,输出精度达到了4 mV。     

一种带自适应斜坡补偿的PCM控制Boost变换器

设计了一种带自适应斜坡补偿的峰值电流模式(PCM)控制Boost变换器。采用一种低功耗自适应斜坡补偿电路,使得升压(Boost)变换器能够实现宽输出范围和高带载能力。在此基础上,提出了一种应用于Boost变换器的电感电流采样电路,该电路实现了高采样速度和高采样精度,且具备全周期的电感电流采样特点。变换器基于SMIC 180 nm BCD CMOS工艺设计。仿真结果表明,该带自适应斜坡补偿的PCM控制Boost变换器输入电压转换范围为2.8 V～5.5 V,输出电压转换范围为4.96 V～36.1 V,最大输出负载电流高达5 A。     

一种分段式峰值电流斜坡补偿电路

设计了一种应用于峰值电流型控制Buck DC-DC转换器的分段式斜坡电流补偿电路,以消除峰值电流控制模式下可能产生的次谐波振荡。该电路采样峰值电流,通过采样电阻将电流转换为电压输出。当开关脉冲控制的导通时间占空比D<35%时,斜坡补偿电压的斜率为零。当占空比D>35%时,斜坡补偿电压的斜率占空比变化。斜坡补偿电路不仅消除了D>50%时次谐波振荡引起的系统不稳定现象,还提高了电源芯片的带载能力。基于0.5 μm BCD工艺进行设计,仿真结果显示,该斜坡补偿电路具有良好的补偿能力和带载能力。应用该电路的DC-DC转换器的最高负载工作电流达到7 A。     

一种Buck变换器中的误差放大器设计

基于系统稳定性的分析和负载瞬态响应的需求,本文设计了一种用于电流模式恒定导通时间(COT)架构DC-DC降压Buck变换器的高性能误差放大器并提出系统补偿方案。该误差放大器在保证频率特性良好的同时,具备高增益、补偿网络简单的优点。文中对所提出的电路结构以及系统补偿方案进行了详细的说明与理论推导,并使用Simplis软件对系统相位裕度进行仿真,最后基于0.18μm BCD(Bipolar CMOS DMOS)工艺,使用Hspice软件对电路进行了仿真验证。仿真结果表明:电源电压为2.7～5.5 V、输出电压为1.8 V时,系统的相位裕度位于62.5°到69.3°之间,负载瞬态恢复时间最大仅为17.3μs。     

一种用于同步Buck变换器的自适应反流检测电路

提出了一种用于同步整流Buck电路的自适应反流检测(AZCD)电路,能够有效限制Buck变换器在DCM模式下出现电感电流的倒灌现象,以实现低EMI和高能效。与传统反流检测电路不同,该电路能够在Buck变换器输出电压变化的情况下保证功率下管的关断准确性。在0.35 μm BCD工艺下,对该电路进行仿真验证。结果表明,在1 MHz开关频率、输出电压从1.5 V变化到3.5 V的情况下,Buck变换器中功率下管的关断误差可以控制在1 ns以内。此外,在负载电流从12.5 mA变化到50 mA的情况下,该AZCD电路可以使Buck变换器效率提升约1%。     

一种高效率Buck变换器的设计

设计了一种基于0.35μm BCD工艺的高效率Buck变换器电路.电路输入电压为10 V～24 V,输出电压为5 V～12 V,最大负载电流为100 mA.采用迟滞控制模式来简化电路结构,降低静态功耗,并通过引入睡眠模式来降低Buck变换器的整体功耗,在Active模式下,静态电流约为110 μA,在Sleep模式下,...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.