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Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies. 相似文献
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光纤到户(FTTH)网络系统是光通信发展的必然趋势.随着社会信息化建设步伐的加快,FTTH已经成为通信网络建设的重点.因此,FTTH用光纤、光缆等产品也越来越受到人们的关注.本文对FTTH所用的光纤、光缆的应用现状及发展趋势进行了分析与探讨. 相似文献
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随着科技的不断发展,FTTH(Fiber To The Home)技术即光纤到户技术正逐渐在全球范围得到推广与应用。该技术以光纤为传输媒介,应用优势非常显著,能有效提升现代广播电视网络传输质量,使其覆盖范围进一步扩大。文中在了解FTTH技术新特征的基础上,阐述了FTTH技术在广播电视网络中的应用与效果,展望了FTTH 技术的发展方向。 相似文献
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The advances in Si technology and the rapid growth of broadband communication via optical fiber allow silicon integrated photonics to begin revolutionizing the electronic devices, circuits, and systems. The pace of technological development has been recently speeded up. Using microfabrication technology we are now able to make waveguide structures and optical components from Si-based materials, such as silicon oxynitride or doped silica. Visible light can be obtained from Si-based materials such as Si quantum wire/dots and Si nanoclusters embedded in insulators. The remaining issues are to develop processes and device structures to make Si photonics economically viable with system and device performance comparable to their existing counterparts. Recent efforts have demonstrated that the light-emitting efficiency can be enhanced greatly and that the lasing effect is also possible with the nanostructures. The impact of these moves will be revolutionary. The successful development of Si integrated photonics will enable on-chip optical interconnects for future microprocessor and giga-scale circuits, chip-to-chip fiber interconnection and will greatly decrease the cost for fiber-to-home connection. This will be one of the major moves for the next technology revolution. The present article discusses some recent developments on these aspects. 相似文献
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针对FTTH建设中存在的问题、成本构成进行了分析,提出了建设灵活的、低成本的FTTH网络的思路和技术措施;结合实际场景分光器的应用对端口利用率的影响进行了探讨,对FTTH设计、建设提供参考。 相似文献
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邱世斌 《电信工程技术与标准化》2005,(9):72-75
FTTH正在走入人们实用化的视野,国内不少经济相对发达地区已经开始了如火如荼的试点工程的建设.本文结合目前国内的建设情况,着重介绍FTTH应用中涉及的光纤、光缆技术.在光纤到户的应用中,传统室外光缆产品依然有用武之地,同时新的适用于引入、室内布线光缆产品逐渐成为主角. 相似文献
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徐乃英 《光纤与电缆及其应用技术》2005,(5):1-7
针对正在到来的光纤到家(FTTH)系统的迅速发展,介绍了世界各国在FFTH用光缆及其相关技术方面的发展动态。这些技术的应用能够大大节省发展FTTH所需的管道资源与网络成本,并可增加网络的可靠性与灵活性。 相似文献
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光纤接入及FTTH技术与应用分析 总被引:3,自引:0,他引:3
宽带光纤接入及FTTH具有传输容量大、传输距离远、传输质量高、可扩展性好、运维成本低、抗干扰和保密性强等优点,是宽带接入的最终发展方向,正成为国内外电信运营商关注的重点。本文从分析国内“十一五”期间宽带业务及带宽需求出发,详细介绍了与FTTH相关技术的特点及最新进展,分析了基于PON技术的FTTx的应用场景,最后给出了综合的FTTx应用建议。 相似文献
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Letian Wang Matthew Eliceiri Yang Deng Yoonsoo Rho Wan Shou Heng Pan Jie Yao Costas P. Grigoropoulos 《Advanced functional materials》2020,30(17)
Both amorphous and crystalline silicon are ubiquitous materials for electronics, photonics, and microelectromechanical systems. On‐demand control of Si crystallinity is crucial for device manufacturing and to overcome the limitations of current phase‐change materials (PCM) in active photonics. Fast reversible phase transformation in silicon, however, has never been accomplished due to the notorious challenge of amorphization. It is demonstrated that nanostructured Si can function as a PCM, since it can be reversibly crystallized and amorphized under nanosecond laser irradiation with different pulse energies. Reflection probing on a single nanodisk's phase transformations confirms the distinct mechanisms for crystallization and amorphization. The experimental results show that the relaxation time of undercooled silicon at 950 K is 10 ns. The phase change provides a 20% nonvolatile reflectivity modulation within 100 ns and can be repeated over 400 times. It is shown that such transformations are free of deformation upon solidification. Based on the switchable photonic properties in the visible spectrum, proof‐of‐concept experiments of dielectric color displays and dynamic wavefront control are shown. Therefore, nanostructured silicon is proposed as a chemically stable, deformation free, and complementary metal–oxide‐semiconductor compatible (CMOS) PCM for active photonics at visible wavelengths. 相似文献
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Silicon photonics has expanded considerably in the last decade and a number of companies have also released products onto the market place. Some of the recent results from the field are reviewed before the main areas requiring further research before they can be achieved are discussed. An overview is given of the major Si photonics research presently being pursued in the UK. Finally, a number of potential new applications are also presented. 相似文献
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在分析国内外FTTH光接收机应用前景的基础上,设计并实现了一款应用于FTTH的CATV光接收机.在低动态接收、高灵敏度和成本方面有较大突破,光功率接收范围达到-8~0dBm,功耗降低到约3W,制造成本降低到300元左右,具有很好的实用价值. 相似文献
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高通量卫星是新一代宽带通信卫星的重要发展和应用方向,我国高通量卫星在国内与周边国家的市场需求旺盛,发展潜力巨大。文中介绍了高通量卫星的技术特点、国外发展动态和后续发展需求,以及国内高通量卫星最近进展。探索了微波光子在高通量通信卫星中的应用及国外微波光子在高通量通信卫星中的研究进展。研究了一种基于微波光子技术的宽带柔性高通量通信卫星载荷方案,验证了微波光子应用于高通量通信卫星的可行性和有效性。最后给出了基于微波光子技术的高通量通信卫星发展建议。 相似文献
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PON聚合拉远技术(PAE)是基于波分技术的一种二次开发,在FTTH小区建设中能够确实解决一些光缆资源紧张和覆盖距离的问题。该项技术的优点非常鲜明,但其缺点会在一定程度上限制技术的应用。文章主要对PON聚合拉远技术进行了介绍,并对其在FTTH中的技术应用实例进行分析。 相似文献
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微波光子学利用光子技术实现微波信号的产生、传输、处理及控制,可突破传统微波技术在带宽、传输损耗和抗电磁干扰等方面的瓶颈,提升雷达、电子战等信息系统的综合性能.激光器、电光调制器和光电探测器是微波光子技术中的三种核心光电子器件,其性能对微波光子链路的噪声和动态等指标具有决定性的影响,但基于分立器件的微波光子系统体积、重量较大,难以满足雷达、电子战等系统的阵列化需求,硅基异质集成技术以及高密度低损耗片上光传输互连技术是解决有源器件集成和无源器件集成的关键技术.文章介绍了用于微波光子的硅基激光器、电光调制器、光电探测器和波导的异质集成技术的发展现状,并探讨了集成微波光子技术的发展趋势. 相似文献