Room temperature toluene sensing using phthalocyanine Langmuir-Blodgett films

Organic thin films, produced by the Langmuir-Blodgett (LB) technique were used to sense toluene gas at levels of 5–9 p.p.m.(parts per million). The interaction of the gas with the surface of the thin films led to significant changes in the electrical conductivity of the film. Since surface reaction is vital in these sensors, it is expected that films produced by the LB technique would provide the necessary surface uniformity to improve the performances of these devices. Most thin film sensors are operated at elevated temperatures to obtain higher efficiencies. A major problem associated with the use of LB films at elevated temperatures is the probability of disintegration and distortion of the layered structure. Thin films (thickness 100–120 nm) of specially substituted phthalocyanine molecules were investigated as possible sensors of toluene gas for room-temperature operation. The preliminary results indicated instantaneous response and recovery times, and the saturation value was reached within 2–3 s when the film was exposed to the gas at intervals of 2 min. The results thus offer potential for using such versatile organic materials as microsensors, even at room temperature.     

Room temperature H2S gas sensing characteristics of platinum (Pt) coated porous alumina (PoAl) thick films

The study reports H₂S gas sensing characteristics of platinum (Pt) coated porous alumina (PoAl) films. The porous alumina (PoAl) thick layers were formed in the dark on aluminum substrates using an electrochemical anodization method. Thin semitransparent platinum (Pt) films were deposited on PoAl samples using chemical bath deposition (CBD) method. The films were characterized using energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM). The thicknesses of coated and bare films were measured using ellipsometry. The sensing properties such as sensitivity factor (S.F.), response time, recovery time and repeatability were measured using a static gas sensing system for H₂S gas. The EDAX studies confirmed the purity of Pt–PoAl film and indicated the formation of pure platinum (Pt) phase. The ellipsometry studies revealed the thickness of PoAl layer of about 15–17 μm on aluminum substrates. The SEM studies demonstrated uniform distribution of spherical pores with a size between 0.250 and 0.500 μm for PoAl film and nearly spherical platinum particles with average particle size ∼100 nm for Pt–PoAl film. The gas-sensing properties of these samples were studied in a home-built static gas characterization system. The H₂S gas sensing properties of Pt–PoAl at 1000 ppm of H₂S gave maximum sensitivity factor (S.F.) = 1200. The response time and recovery time were found to be 2–3 min and ∼1 min respectively. Further, the measurement of H₂S gas sensing properties clearly indicated the repeatability of gas sensing response of Pt–PoAl film. The present study indicated the significant potential of Pt coated PoAl films for H₂S gas sensing applications in diverse areas.     

Solvothermal synthesis and characterization of Sb-doped SnO2 nanoparticles used as transparent conductive films

Sb-doped SnO₂ (ATO) nanoparticles was synthesized at different temperatures by the solvothermal route, starting with SnCl₄·5H₂O and SbCl₃. The samples were characterized by means of XRD, Mössbauer spectroscopy and TEM, the specific surface area and resistivity of samples were examined, respectively. Results showed that the mean crystallite size and resistivity of the samples increased and decreased, respectively, with the increase of the solvothermal temperature. The lowest resistivity of the samples was found at 160 °C, and Mössbauer spectroscopy showed that the content of Sb⁵⁺ in these samples was the highest. TEM showed that the powder was monodispersed in the range of 8–15 nm particles size. Sb-doped SnO₂ thin films were prepared by spin coating process on corning 7059 glass using the ethanol suspensions of Sb-doped SnO₂ nanoparticles and the Hall mobility μ, the carrier concentration n, the sheet resistance R_□ and the transmission spectra of the films were measured and investigated.     

Optical and structural characteristics of Sb-doped SnO2 thin films grown on Si (111) substrates by Sol–Gel technique

The optical and structural characteristics of Sb-doped SnO₂ films grown on Si (111) substrates by modified sol–gel technique have been investigated. The films are both polycrystalline and retain the SnO₂ peaks of the rutile phase corresponding to (110), (101), (211) and (310) without any other phases appearing. X-ray photoelectron spectroscopy shows the peaks corresponding to the Sn 3d _5/2, the O 1s, and the Sb 3d _5/2 states. Refractive indices n, and extinction coefficients k, as functions of the incident photon energy were obtained for the films by spectroscopic ellipsometry measurement, and the refractive indices were from 1.95 to 1.50 at 2.6 eV with increasing Sb content. The optical constants, n and k, of the films can be controlled by variable Sb content. These results are important for the applications in integrated optical devices.     

用激光烧结法制备的SnO2薄膜的气敏性质

用溶胶-凝胶法制备SnO2前驱液,然后用提拉法分别在单晶Si和Al2O3基片表面制备出SnO2前驱膜,再用脉冲Nd:YAG激光烧结前驱膜使其转变为晶体SnO2薄膜.用XRD分析了单晶Si表面的SnO2薄膜,研究激光功率对SnO2薄膜相组成的影响.TEM观察表明,激光烧结后的薄膜SnO2颗粒均匀,直径约为10 nm.用激光烧结法制备的SnO2薄膜对浓度为1.80×10-4丙酮的最高灵敏度为30～40,明显高于用传统烧结法制备的SnO2薄膜的灵敏度.激光烧结能降低薄膜具有最高灵敏度的工作温度.     

Room temperature NO2 sensing performance enhancement of VO2(B) composited rGO structure

Journal of Materials Science: Materials in Electronics - The VO2(B)/rGO composite structure was proposed to improve the gas sensitivity response of VO2(B) at room temperature (25 °C)...     

Microstructure and photoluminescence studies of Sb-doped SnO2 zigzag nanobelts

SnO2 zigzag nanobelts were successfully Sb-doped by a simple vapor deposition method. Field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM), and X-ray diffraction (XRD) were used to characterize these Sb-doped nanobelts. The Sb doping in SnO2 nanobelts was confirmed by Energy Dispersive X-ray spectrum (EDS) and X-ray photoelectron spectroscopy (XPS). It is found that there is no apparent lattice distance difference between the pure SnO2 and the 0.705 at% Sb doped SnO2 nanobelts. A slight blue-shift in the photoluminescence (PL) spectra was shown with the increase of Sb doping concentration and a reasonable explanation was given.     

气-液界面沉淀法制备锑掺杂氧化锡（ATO）纳米粉体

以2SnCl4·5H2O和SbCl3为原料,采用气-液界面法制备纳米ATO粉体,用粒度分析仪、X射线衍射仪、x射线光电子能谱仪及透射电子显微镜研究不同掺杂量下粉体组成、分布情况以及尺寸形貌;采用宽频介电阻抗谱仪测量不同掺杂比例样品的电性能,研究表明,采用气-液界面法制备的ATO纳米粉体粒径小、分布窄,掺杂剂分布均匀,表现出优异的电性能。当掺杂量为10At％时,所制备的粒径为10nm左右,表现出最佳的导电性能,电导率达到1．64×10-2S·cm-1。该制备方法对于其他复合纳米粉体的合成制备具有重大借鉴意义。     

Room temperature ferromagnetism in Co-incorporated TiO2 thin films

Observation of room temperature ferromagnetism (RTFM) in nano-crystalline Co-incorporated titanium dioxide [Ti(1-x)Co(x)O2(x = 0.05)] thin films prepared by spray pyrolysis technique is reported. While only the anatase phase was detected in as-deposited 5 at.% Co-incorporated TiO2 film, a small amount of rutile phase developed following its vacuum annealing. Besides, no X-ray diffraction peak corresponding to cobalt metal could be detected in any of the two films. SQUID magnetometry of both pristine and Co-doped thin films at room temperature elucidated distinct ferromagnetic behavior in 5 at.% Co-incorporated as-deposited film with saturation moment M(s) approximately 5.6 emu/cm3 which got enhanced up to 11.8 emu/cm3 on subsequent vacuum annealing. From the zero field cooled magnetization measurement we confirmed the absence of Co-metal clusters. The electrical resistivity was found to be greater than 108 omega-cm for the films. Based on the magnetic and electrical measurements the origin of RTFM has been attributed to the bound magnetic polaron (BMP) model.     

Room temperature CO and H2 sensing with carbon nanoparticles

We report on a shell-shaped carbon nanoparticle (SCNP)-based gas sensor that reversibly detects reducing gas molecules such as CO and H(2) at room temperature both in air and inert atmosphere. Crystalline SCNPs were synthesized by laser-assisted reactions in pure acetylene gas flow, chemically treated to obtain well-dispersed SCNPs and then patterned on a substrate by the ion-induced focusing method. Our chemically functionalized SCNP-based gas sensor works for low concentrations of CO and H(2) at room temperature even without Pd or Pt catalysts commonly used for splitting H(2) molecules into reactive H atoms, while metal oxide gas sensors and bare carbon-nanotube-based gas sensors for sensing CO and H(2) molecules can operate only at elevated temperatures. A pristine SCNP-based gas sensor was also examined to prove the role of functional groups formed on the surface of functionalized SCNPs. A pristine SCNP gas sensor showed no response to reducing gases at room temperature but a significant response at elevated temperature, indicating a different sensing mechanism from a chemically functionalized SCNP sensor.     

Gas sensing selectivity of oxygen-regulated SnO2 films with different microstructure and texture

The selectivity of gas sensing materials is increasingly important for their applications. The oxygen-regulated SnO₂ films with (110) and (101) preferred orientation were obtained through magnetron sputtering, followed by annealing treatment. Their micro-structure, surface morphology and gas response were investigated by advanced structural characterization and property measurement. The results showed that the as-prepared (110)-oriented SnO₂ film was oxygen-rich and had more adsorption sites while the as-prepared (101)-oriented SnO₂ film was oxygen-poor and more sensitive to de-oxidation. H₂ gas sensitivity, response speed, selectivity between H₂ and CO of the (110)-orientated SnO₂ film was superior to that of the (101)-orientated SnO₂ film. After treated at high temperature and high vacuum, the reduction of gas-sensing properties of the annealed (110) SnO₂ film was much more than that of the annealed (101) SnO₂ film. The lattice oxygen was responsible for the difference in gas-sensing response between (110) and (101)-oriented SnO₂ films under oxygen regulation. This work indicated the gas-sensing selectivity of the different crystal planes in SnO₂ film, providing a significant reference for design and extension of the related materials.     

常压CVD法制备Sb掺杂SnO2薄膜的性能研究

以C4H4SnCl3和SbCl3为反应先驱体,采用常压化学气相沉积法制备Sb掺杂SnO2薄膜,研究了薄膜沉积时间、基板温度以及Sb掺杂量对薄膜结构和红外反射性能的影响。利用X射线衍射(XRD)、扫描电镜(SEM)、X射线光电子能谱(XPS)等手段对所制备薄膜的结构、形貌、成分进行了分析表征。XRD结果表明薄膜具有四方相金红石晶型结构,在基板温度为650℃时能制得结晶性能较好的多晶薄膜;XPS结果表明元素Sb主要以Sb5+的形式掺杂于SnO2薄膜中。还讨论了Sb掺杂量对方块电阻、透射率等薄膜性质的影响。结果表明,当Sb掺杂量为2%,基板温度为600℃,镀膜时间为4min时可制备出可见光透过率为75%、红外透过率仅为30%的薄膜,且此时薄膜方块电阻为38.4Ω/□。     

Room temperature oxidation rate constants of ultra- thin (discontinuous) molybdenum films

Following the method developed by Fehlner, an attempt is made to determine the room temperature oxidation rate constants of ultra-thin (discontinuous) molybdenum films. Thin films of molybdenum of thickness less than 100 Å, corresponding to resistance of 0.55–12.0 Mω, were deposited onto glass substrates at pressures of less than 10^?8 Torr and were exposed to oxygen pressures of 10^?7?10^?5 Torr at room temperature. The oxidation rate constants were calculated from the slope of log R_dcversus log t plots using the electron tunneling conduction model of Neugebauer and Webb. Values of the logarithmic oxidation rate constants obtained ((0.05?0.18) × 10^?9 cm) are compared with those for various refractory metal films and agree fairly well with those published in the literature for discontinuous metal films.     

Effect of Sn precursor on the synthesis of SnO2 and Sb-doped SnO2 particles via polymeric precursor method

SnO2 and Sb-doped SnO2 particles were synthesized using the polymeric precursor method with different Sn salt precursors： SnCl2.2H2O, SnCl4.5H20, or Sn citrate. Sb2O3 was used as the precursor of Sb, and the molar ratio of nsn：nsb was held constant. FTIR and TGA/DTA were used to examine the influence of the Sn precursor on the formation and thermal decomposition of the Sn and Sn-Sb complexes. The calcination products obtained from heating the Sn and Sn-Sb complexes at 500℃ in air were analyzed using XRD and TEM analysis. The results revealed that the SnO2 and Sb-doped SnO2 formation temperatures depended on the nature of the Sn precursor. The calcination products were found to be SnO2 and Sb-doped SnO2 particles, which crystallized in a tetragonal cassiterite structure with a highly preferred （110） planar orientation. The Sn precursor and the presence of Sb in the SnO2 matrix strongly influenced the crystallinity and lattice parameters.     

sol-gel法制备的SnO_2-TiO_2厚膜及其气敏特性研究

采用sol-gel法,以钛酸丁酯、四氯化锡为前驱体制备了不同掺杂量的Sn O2-Ti O2纳米粉末,样品经300,500,700和900℃退火后,利用浸渍提拉法,在Al2O3陶瓷管表面制备了Sn O2-Ti O2厚膜。通过XRD和SEM对制备的纳米粉末的物相、形貌进行表征,静态配气法对其气敏性能进行测试,并结合分子轨道理论探讨了气敏机理。实验结果表明,经700℃退火的4%(原子分数)掺杂的Sn O2-Ti O2气敏元件,对乙醇气体具有很好的选择性,在工作温度为63℃时,对乙醇气体的灵敏度可达1 903,响应-恢复时间分别为1和3 s,所制备的气敏元件有望用于乙醇气体的实用化检测。