在BIRTV2005主题报告会上的致词

在这秋高气爽的好季节，迎来了第十四届北京广播电影电视设备展览会（BIRTV），我代表国家广播电影电视总局对展览会的举办表示热烈祝贺！BIRTV已成功举办了十三届，已成为我国广播影视业界的重要盛会，为广播影视技术交流提供了很好的平台，对促进我国广播影视发展发挥着重要的作用。在这里，我代表国家广播电影电视总避向参加展览会的各位来宾，各位同仁和各位厂商代表表示热烈的欢迎，向多年来关心支持我国广播影视发慌伯各位朋友和BIRTV的组织表示衷心的感谢！     

张海涛同志在第十四届北京广播电影电视设备展览会（BIRTV2005）上的致词

尊敬的各位来宾,女士们、先生们:下午好!在这秋高气爽的美好季节,迎来了第十四届北京广播电影电视设备展览会(BIRTV),我代表国家广播电影电视总局对展览会的举办表示热烈祝贺!BIRTV已成功举办了十三届,已成为我国广播影视业界的重要盛会,为广播影视技术交流提供了很好的平台,对     

张海涛同志在第十五届北京广播电影电视设备展览会（BIRTV2006）主题报告会上的致词

各位来宾、各位朋友,同志们:上午好!在这秋高气爽的日子里,我们迎来了一年一度的北京广播电影电视设备展览会(BIRTV),首先我代表国家广电总局对展览会的举办表示热烈的祝贺,对前来参加展览会的各位来宾、各位同仁、各位厂商代表表示热烈的欢迎,对多年来关心支持中国广播影视发展的各界朋友表示衷心的感谢!BIRTV是中国国际广播影视博览会的重要内容,已经成功地举办了十四届,展出的面积越来越大,参展的国际厂商越来越多,展览的内容越来越丰富,展览的服务越来越专业,已从国内的广播影视设备展,发展成为在亚太地区乃至全球都具有重要影响的…     

张海涛同志在第十五届北京国际广播电影电视设备展览会(BIRTV2006)主题报告会上的致词

在这秋高气爽的日子里,我们迎来了一年一度的北京国际广播电影电视设备展览会（BIRTV）．首先我代表国家广电总局对展览会的举办表示热烈的祝贺,对前来参加展览会的各位来宾、各位同仁、各位厂商代表表示热烈的欢迎．对多年来关心支持中国广播影视发展的各界朋友表示衷心的感谢!BIRTV是中国国际广播影视博览会的重要内容．已经成功地举办了十四届．展出的面积越来越大.     

国家广电总局副局长张海涛在BIRTV2009主题报告会的讲话(摘要)

各位来宾,同志们、朋友们:一年一度的北京广播电影电视设备展览会(BIRTV)就要开幕了,我代表国家广电总局和王太华同志对BIRTV的举办表示热烈祝贺,对前来参加展会的各位来宾、各位同行表示热烈欢迎,对多年来关心支持参与我国广播影视建设发展的国内外厂商和各界朋友表示衷心感谢!     

在第十八届北京广播电影电视设备展览会(BIRTV2009)主题报告会上的讲话

各位来宾,同志们、朋友们： 一年一度的北京广播电影电视设备展览会（BIRTV）就要开幕了,我代表国家广电总局和王太华同志对BIRTV的举办表示热烈祝贺,对前来参加展会的各位来宾、各位同行表示热烈欢迎,对多年来关心支持参与我国广播影视建设发展的国内外厂商和各界朋友表示衷心感谢!     

国家广电总局田进副局长在CCBN2011主题报告会上的讲话

各位来宾,同志们:一年一度的中国国际广播电视信息网络展览会(CCBN)就要开幕了,我代表国家广播电影电视总局和中宣部副部长、广电总局局长蔡赴朝同志,对CCBN的开幕表示热烈祝贺!对参加展览会的中外厂商、各位同行和各界朋友表示热烈欢迎!对多年来为我国广播影视繁荣发展作出贡献的社会各界人士表示衷心的感谢!CCBN已成功举办了18届,伴随我国广播影视的发展,规模不断扩大,理念不断创新,影响不断提升。参加今年     

在第十八届北京广播电影电视设备展览会（BIRTV2009）主题报告会上的讲话

一年一度的北京广播电影电视设备展览会（BIRTV）就要开幕了．我代表国家广电总局和王太华同志对BIRTV的举办表示热烈祝贺,对前来参加展会的各位来宾、各位同行表示热烈欢迎,对多年来关心支持参与我国广播影视建设发展的国内外厂商和各界朋友表示衷心感谢!BIRTV自1987年举办以来,参展厂商不断增加,参展面积不断扩大,服务水平不断提高．已成为具有重要影响的国际性广播影视技术设备展览盛会,为国外厂商进入我国广电设备市场、为我国民族工业走向国际市场,搭建了重要的技术交流平台和成果展示平台。     

张海涛在BIRTV2009主题报告会上的讲话

一年一度的北京广播电影电视设备展览会（BIRTV）就要开幕了．我代表国家广电总局和王太华同志对BIRTV的举办表示热烈祝贺,对前来参加展会的各位来宾、各位同行表示热烈欢迎．对多年来关心支持参与我国广播影视建设发展的国内外厂商和各界朋友表示衷心感谢!BIRTV自1987年举办以来．参展厂商不断增加．参展面积不断扩大,服务水平不断提高．     

在第十五届北京国际广播电影电视设备展览会(BIRTV2006)主题报告会上的致词

在这秋高气爽的日子里．我们迎来了一年一度的北京国际广播电影电视设备展览会（BIRTV）．首先我代表国际国家广电总局对展览会的举办表示热烈的祝贺，对前来参加展览会的各位来宾．各位同仁、各位厂商代表表示热烈的欢迎．对多年来关心支持中国广播影视发展的各界朋友表示衷心的感谢!     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.     

A 1 cm/spl times/1 cm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 1 cm/spl times/1 cm array of 100 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.