纳米压印制作半导体激光器的分布反馈光栅

分布反馈(DFB)光栅的制作是半导体激光器芯片的关键工艺,通过纳米压印技术在InP基片表面涂覆的光刻胶上压印出DFB光栅图形,并分别通过湿法腐蚀和干法刻蚀技术将光栅图形转移到InP基片上。所制作的DFB光栅周期为240nm(对应于1 550nm波长的DFB激光器),光栅中间具有λ/4相移结构。采用纳米压印技术制作的DFB光栅相对于通常双光束干涉法制作的光栅具有更好的均匀性以及更低的线条粗糙度,而且解决了双光束干涉法无法制作非均匀光栅的技术难题。相对于电子束直写光刻法,采用纳米压印技术制作DFB光栅具有快速与低成本的优势。采用纳米压印技术在InP基片上成功制作具有相移结构的DFB光栅,为进一步进行低成本高性能的半导体激光器芯片的制作奠定了良好基础。     

808 nm半导体分布反馈激光器的光栅设计与制作

半导体分布反馈（ DFB）激光器的核心工艺之一是分布反馈光栅的制作，设计了808 nm DFB激光器的一级光栅结构。利用纳米压印技术与干法刻蚀附加湿法腐蚀制作了周期为120 nm的梯形布拉格光栅结构，使用MATLAB和Pics3D软件模拟了一次外延结构的光场分布和能带图。通过优化湿法腐蚀所用腐蚀液各组分比例、腐蚀温度、腐蚀时间等条件，得到了理想的湿法腐蚀工艺参数。扫描电子显微镜表征显示，光栅周期为120 nm，光栅深度约为85 nm，占空比约为47%，光栅边缘线条平直，表面平滑，周期均匀。创新型的引入湿法腐蚀工艺和腐蚀牺牲层使光栅表面的洁净度得到保证，提高了二次外延质量的同时，也为进一步制作DFB激光器高性能芯片奠定了良好的基础。     

纳米压印技术制作CWDM系统用DFB激光器阵列

使用纳米压印技术制作了用于1.3um CWDM系统的四通道单片集成折射率耦合DFB半导体激光器。得到了符合设计的20nm通道间隔激射波长。结果显示纳米压印技术在制作DFB半导体激光器方面是成熟可靠的。     

取样光栅分布反馈激光器阵列器件研究

采用了一种基于取样光栅原理制作多通道增益-折射率耦合型光栅的方法,成功制作了8波长分布反馈(DFB)激光器阵列,阵列中各激光器的阈值电流为30～40 mA,注入电流为100 mA时的平均输出光功率为10mW,阵列器件实现了波长的可选择性激射,相邻激光器间的频率间距为200 GHz,验证了用取样光栅方法制作DFB激光器阵列的可行性。     

光纤光栅特性及其在光纤通信中的应用

介绍了光纤光栅的光学特性，并对应用于光纤通信系统中的高性能光纤光栅器件，例如波分复用／解支用器、激光器、DFB激光器、滤波器、色散补偿器、超窄光脉冲产生器等的原理及应用进行了阐述。     

基于表面曲线光栅的高功率窄线宽半导体激光器

随着智能感知技术的快速发展，高功率、窄线宽的半导体激光光源成为研究热点。通过在边发射半导体激光器件表面引入高阶曲线光栅，设计了一种独特的非稳谐振腔结构，可实现高功率和窄线宽。采用紫外光刻和电感耦合等离子体（ICP）刻蚀技术，制备了周期为6.09μm、占空比为0.66、刻蚀深度为500 nm的曲线光栅。在室温条件下，测得腔长为2 mm的器件的阈值电流为220 mA，连续输出功率为1.48 W，斜率效率为0.63 W/A。比较了法布里-珀罗激光器、直线光栅分布式反馈（DFB）激光器和曲线光栅DFB激光器的光谱，结果表明，曲线光栅对半导体激光器的模式选择起到了关键作用，有利于实现高功率DFB激光器的窄线宽单模输出。该器件具有制作工艺相对简单、性能优异、可靠性高等特点，具有广阔的应用前景。     

宽温度锁定808 nm激光器阵列

为了提高808 nm激光器对固体激光器的泵浦效率，对其波长稳定性进行了研究。阐述了光栅设计的理论基础。将纳米压印、干法刻蚀及湿法腐蚀工艺相结合，制备了含有一阶光栅的808 nm分布反馈（DFB）激光器阵列。在准连续条件（脉宽为200μs，频率为20 Hz）下对所制备的激光器进行性能测试。测试结果表明：所制备的808 nm DFB激光器阵列的发射波长随温度的漂移系数为0.06 nm/℃，温度锁定范围可达70℃（-10～60℃），随电流的漂移系数为0.006 nm/A。     

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

通过将二级光栅直接刻在脊形波导AlGaInAs/AlGaAs DFB激光器的无铝光波导层上,实现了波长约为820nm,单面功率为30mW的单纵模激光器.由于采用无铝光栅,保证了二次外延质量,从而得到较好的器件性能.激光器的阈值电流为57mA,斜率效率约为0.32mW/mA.     

激射波长为820nm的大功率分布反馈激光器

通过将二级光栅直接刻在脊形波导AlGaInAs/AlGaAs DFB激光器的无铝光波导层上,实现了波长约为820nm,单面功率为30mW的单纵模激光器.由于采用无铝光栅,保证了二次外延质量,从而得到较好的器件性能.激光器的阈值电流为57mA,斜率效率约为0.32mW/mA.     

DFB光纤激光器中相移光栅优化分析

相移光栅在光通信领域具有较高的应用价值,文中用传输矩阵法,详细分析了相移光栅中相移量,折射率调制深度,相移位置及光栅长度对相移光栅的影响,并结合相移光栅在DFB光纤激光器中的应用进行了分析。分析表明,实际制作DFB光纤激光器时,应根据实际应用场合,对相移光栅的相关参数进行设计,从而提高光纤激光器性能。     

Low-cost edge-emitting DFB laser arrays for DWDM communication systems implemented by bent and tilted waveguides

This paper emphasizes methodology concerning variations of the emission wavelengths of edge-emitting semiconductor lasers. We present a method based on tilted distributed feedback (DFB) gratings to be used in combination with specially bent or tilted straight waveguides for the low-cost and ultraprecise definition of different wavelength channels in lasers for Dense wavelength division multiplexing (DWDM) fiberoptic communication systems. The homogeneous DFB grating field is defined using low-cost processes and is tilted with respect to a preferential direction defined by the device borders or the crystal geometry. Our method allows ultraprecise definitions of the DWDM wavelengths and is applicable index- and complex-coupled DFB gratings in both isolated lasers and arrays. Design, technological implementation, and experimental characterization of the devices is presented in this paper. Thin-film heaters are used for correcting small wavelength deviations occurring due to technologically induced tolerances.     

DFB LD manufactured by nanoimprint lithography

Gratings of distributed feedback laser diodes (DFB LDs) have been successfully manufactured by nanoimprint lithography (NIL). Uniform gratings with periods of about 240 nm and phase-shifted in the center have been fabricated by a soft press NIL employing a polymer stamp technology. Moreover, the shape of the grating is rectangle, rather than sinusoidal by holography.The test results show good characteristics of the electrical and spectral output. The results of this study indicate that NIL has high potential for the manufacture of DFB LDs.     

A method to determine the above-threshold stability of distributedfeedback semiconductor laser diodes

An analysis of the above-threshold stability of distributed feedback (DFB) semiconductor laser diodes (LD's) is presented. It is based on a numerical model which takes into account effects of spatial hole burning (SHB) and the nonlinear gain coefficient. In the analysis, the Newton-Raphson (NR) technique has not been used, and no functional derivative is required. Taking into account the presence of another nonlasing mode, the single-mode stability of the DFB laser diodes is determined. The proposed model does not depend on any particular DFB structure, and hence can be applied to various DFB LD structures. Numerical results are presented for a three-phase-shift (3PS) DFB LD     

基于REC技术的可调谐激光器模块

通过重构-等效啁啾（REC）技术实现了一种基于分布式反馈（DFB）激光器矩阵的低成本可调谐激光器模块,对该模块进行了波长调谐、稳定性以及其他性能的测试,并将特定波长的参数加以标定。模块中的相邻激光器之间的中心波长间隔均匀等距且P-I特性良好,可调谐激光器输出波长的波动小于±3 pm,光功率变化小于0.02 dBm。波长调谐范围为1536.64～1559.36 nm,在该范围内依照ITU-T的DWDM标准涵盖了60特定波长通道,通道切换时间为5～30 s。     

Optical retiming regenerator using 1.5 mu m wavelength multielectrode DFB LDs

An optical retiming regenerator is demonstrated using two 1.5 mu m wavelength multielectrode (ME) DFB LDs at 200 Mbit/s. The regenerator consists of an injection-locked self-pulsating ME DFB LD for timing recovery and a bistable ME DFB LD for retimed regeneration.<>     

A two-step laterally tapered 1.55-/spl mu/m SSC DFB laser fabricated by using a nonselective grating process

We demonstrate a two-step laterally tapered 1.55-/spl mu/m spot size converter distributed feedback laser diode (SSC DFB LD) having a planar buried heterostructure-type active waveguide and a ridge-type passive waveguide fabricated by using a nonselective grating process. Unlike conventional SSC DFB LDs, where a selective grating is employed, this SSC DFB LD employed a nonselective grating over the entire device region in order to make its fabrication much simpler than that of the conventional SSC DFB LDs. The two-step laterally tapered SSC is effective in removing an unwanted wavelength peak originating from the SSC section having a multiquantum well and a grating under it. The fabricated SSC DFB LD operates at 1.553-/spl mu/m wavelength and shows a far field pattern in horizontal and vertical directions of 13.4/spl deg/ and 19.5/spl deg/, respectively.     

基于1665 nm激光器测量甲烷气体浓度的研究

介绍了一种以1665 nm分布反馈(DFB)激光器为光源,使用双光路差分吸收光谱技术(DAS)测量甲烷浓度的检测系统。双光路差分吸收光谱技术能有效抑制由于光源光强变化、探测器零点漂移等因素所引起的测量的不准确。文中对这种检测方法进行了理论和实验分析,系统的最小探测浓度为100×10-6,响应时间约为14 s。     

4.6km距离5Gb/s DWDM自由空间光通信实验

建立了4.6 km自由空间光通信(FSO)链路,使用密集波分复用(DWDM)及l 550hm光纤通信技术完成了5 Gb/s数据传输.经外调制器后,DFB激光器输出两路速率为2.5 Gb/s的光信号,波长为1 547.6 nm和l 549.2 nm.经DWDM耦合,再经掺饵光纤放大器(EDFA)放大,传输至2.3 km外...     

Two-step laterally tapered spot-size converter 1.55-/spl mu/m DFB laser diode having a high slope efficiency

We demonstrate a two-step lateral tapered 1.55-/spl mu/m spot-size converter distributed feedback laser diode (SSC DFB LD) having slope efficiencies as high as 0.457 and 0.319 mW/mA measured at 25 /spl deg/C and 85 /spl deg/C, respectively. The SSC DFB LD fabricated by using a nonselective grating process has a double core waveguide structure including a planar buried heterostructure type active waveguide and a ridge type passive waveguide. The fabricated SSC DFB LD operates at 1.553-/spl mu/m wavelength and shows a far-field pattern in horizontal and vertical directions of 7.3/spl deg/ and 11.6/spl deg/, respectively.